• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.460-466
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• 2002

Titanium oxide film was deposited on the commercially pure titanium (cp-Ti) by thermal oxidation method for its medical application. The cp-Ti disks were cleaned and then heat-treated at the temperatures of 500, 550, 600, 650, and 700${\circ}C$, respectively, for 10 min in air or Ar. To test the ability of calcium phosphate formation, the specimens were immersed in the Eagle's minimum essential medium solution at 36.5${\circ}C$ for 15 days. The morphology and chemical composition of the surfaces before and after soaking were analyzed by using FE-SEM and EDS. The in-vitro formation of carbonated calcium phosphate on the thin films containing nano-sized $TiO_2$ crystals was identified.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.79-79
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• 2010

Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.335-335
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• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• Journal of the Korean Society of Food Science and Nutrition
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• v.34 no.9
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• pp.1308-1313
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• 2005

The physiological activity of Lycii fructus extracts were examined. Total phenolic contents in the ethanol extracts (9.5 mg/g) of Lycii fructus were higher than that of water extracts (8.7 mg/g). The chlorogenic acid ($1.7{\mu}g$ in water extracts and $1.3{\mu}g$ in $60\%$ ethanol extract) was the most abundant phenolic compound as analyzed by HPLC. The ABTS [2,2'-azinobis (3-othylbenfothiaznoline-6- sulfornic acid)] radical decolor-ization electron donating ability (DPPH) and antioxidant protection factor (PF) were determined for extracts from Lycii fructus. Water extract ($76.7\%$ on ABTS, $92.6\%$ on DPPH and 1.1 on PF) showed higher inhibition rate than $60\%$ ethanol extracts ($52.8\%,\;88.8\%$ and 1.0). Thiobarbituric acid reactive substance (TBARS) was determined as $1.5{\times}10^{-3}\;{\mu}M$ in $60\%$ ethanol extract. Ethanol extracts was more effective in decreasing TBARS than water extracts. The water extracts from Lycii fructus had higher angiotensin converting enzyme (ACE) inhibition activity than ethanol extracts. The result will be useful for functional foods application and under-standing the physiological activities of Lycii fructus.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.250-250
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• 2012

Recently, multiferroic materials have attracted much attention due to their fascinating fundamental physical properties and potential technological applications in magnetic/ferroelectric data storage systems, quantum electromagnets, spintronics, and sensor devices. Among single-phase multiferroic materials, $BiFeO_3$, in particular, has received considerable attention because of its very interesting magnetoelectric properties for application to spintronics. Enhanced ferromagnetism was found by Fe-site ion substitution with magnetic ions. In this study, $BiFe_{1-x}Ni_xO_3$ (x=0 and 0.05) bulk ceramic compounds were prepared by solid-state reaction and rapid sintering. High-purity $Bi_2O_3$, $Fe_3O_4$ and NiO powders were mixed with the stoichiometric proportions, and calcined at $450^{\circ}C$ for 24 h to produce $BiFe_{1-x}Ni_xO_3$. Then, the samples were directly put into the oven, which was heated up to $800^{\circ}C$ and sintered in air for 20 min. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The Raman measurements were carried out with a Raman spectrometer with 514.5-nm-excitation Ar+-laser source under air ambient condition on a focused area of $1-{\mu}m$ diameter. The field-dependent magnetization and the temperature-dependent magnetization measurements were performed with a vibrating-sample magnetometer. The x-ray diffraction study demonstrates the compressive stress due to Ni substitution at the Fe site. $BiFe_{0.95}Ni_{0.05}O_3$ exhibits the rhombohedral perovskite structure R3c, similar to $BiFeO_3$. The lattice constant of $BiFe_{0.95}Ni_{0.05}O_3$ is smaller than of $BiFeO_3$ because of the smaller ionic radius of Ni3+ than that of Fe3+. The field-dependent magnetization of $BiFe_{0.95}Ni_{0.05}O_3$ exhibits a clear hysteresis loop at 300 K. The magnetic properties of $BiFe_{0.95}Ni_{0.05}O_3$ were improved at room temperature because of the existence of structurally compressive stress.

• Spatial Information Research
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• v.23 no.5
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• pp.9-19
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• 2015

The popularity of smart devices and Location Based Services (LBSes) is increasing in part due to users demand for personalized information associated with their location. These services provide intuitive and realistic information by adopting Augmented Reality (AR) technology. This technology utilizes various sensors embedded in the mobile devices. However, these services have inherent problems due to the devices small screen size and the complexity of the real world environment; overlapping content on a small screen and placing icons without considering the user's possible movement. In order to solve these problems, this paper proposes a Mobile Augmented Reality Model with the application of Street Data. The model consists of two layers: "Real Space" and "Information Space". In the model, a user creates a query by scanning the nearby street with a camera in real space and searches accessible content along the street through the use of the information space. Furthermore, the results are placed on both sides of the street to solve the issue of Overlapping. Also, the proposed model is implemented for region "Aenigol", and the efficiency and usefulness of the model are verified.

• Journal of the Korean Recycled Construction Resources Institute
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• v.2 no.1
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• pp.113-119
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• 2006

It is now established that more than two types of blended aggregate have beneficial effects on quality and supply of concrete in the long run. However, studies on blended aggregate have not widely been progressive and the evaluation method of its most favorable mixture proportion is still needed. Therefore this study investigated the most favorable mixture proportion through the physical experiment of fresh and hardened state's cement mortar, in response to three types of composite ratio, natural fine aggregate(Ns), crushed fine aggregate(Cs) and recycled fine aggregate(Rs). Test showed that increase of blending ratio of Ns and Cs improved fluidity of mot1ar. For the properties of compressive and flexural strength, mortar blending Ns and Cs properly, exhibited similar value to one using only Cs, while mortar mixing Rs showed lower strength value as less as 6% of control one. Mortar using only Rs exhibited the largest drying shrinkage value. In addition, even thought it is not a clear quantitative analysis, technical-imaging-skill presenting the most favorable mixture proportion 3-dimensionally is proposed in this research, in order to notify the proportion easily.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.73-79
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• 2013

Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

• The Journal of Dong Guk Oriental Medicine
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• v.3
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• pp.237-267
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• 1994

The purpose of this study is the approach to I.I.C.P. centered on the meaning of consciousness disorder and the pathological aspect of Kwul (Jose consciousness ; faint, fall into a coma). The meaning of consciousness disorder and apoplexy is evidently involved the definition of Kwul. 1. It is found that the etymological interpretation on Kwul which the energy rises back to go through blocked space and the meaning interpretation of regarding Kwul as apoplexy with medical viewpoint, are related with consciousness disorder and motor disturbance in IICP in the aspect of the rise of Kwul and the abnormal rising of vital energy and blood, In addtion, the overall of meaning of Kwul is showed in table <1-1> by reference to doctors of many generations, 2. The pathology of Kwul includes abnormal rising, sthenia-syndrome in the upper part and asthenia in the lower, the origin of Kwul, the lower, looking like Yin by too sthenic Yang and looking like Yang by too sthenic Yin. The headache, vomiting, papilledema, paralysis of nervi craniales, coma, blood pressure rising, tachycardia by I.I.C.P can be regarded as a conception of trouble of vital energy, sthenia-syndrome of Kwul. The pulse pressure, brachycardia, bradypnea can be regarded as the conception of looking like Yin by too sthenic Yang. 3. In the emergency of Kwul, the abnormal ternimal reversion of the Kwulyin channel, Kuyang channel, and three Yins are related with the phenomenon in I.I.C.P. It is considered that the reverse movement of materials, I.I.C.P. can be closely observed by giving meaning on the meridian of Kwul in Somunkwulron. And the content of phrases of Naelyung which includes consciousness disorder refered in the chapter of Kwul, is compared with I.I.C.P. 4. The followings should be considered; examination of optic symptom and abnormal posture in cerebral herniation ; understanding and working out counterplans of factors and symptoms of consciousness disorder by the observation of vital sign, check of general stages, neurologic inverstigation, clinical diagnosis, and subsidiary diagnosis; application of morphological change of opinion; addtion of the conception of demonstration centered on Yunkyung, Samyinkwulruk, asthenia and thenia of healthy energy in oriental medicine. 5. The similarity of Kwul and I.I.C.P. can be found from etiology and pathotenic factor. The similarity is clearly found by investigation of etiology, pathotenic factor, symptoms and thrapy of Kwul, disease symptom ar.d other symptoms.