• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.488-491
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• 2002

We report the observation of line shapes in the optogalvanic spectrum, which are different from those of absorption, for transitions origination from the $3P_2$ ($1s_5$ in Paschen notation) metastable level of argon. The OG line shapes resemble those of absorption and be used to diagnose the characteristics of the discharge plasma. The measured plasma temperatures of Ar hollow cathode discharge for several metal cathodes are about 620~780K at discharge current of 7~10mA.

• Journal of Biomedical Engineering Research
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• v.6 no.1
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• pp.1-4
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• 1985

Background EEG signals can be represented as the sum of a conventional AR process and an innovation process. It is know that conventional estimation techniques, such as least square estimates (LSE) or Gauasian maximum likelihood estimates (MLE-G) are optimal when the innovation process satisfies the Gaussian or presumed distribution. When the data are contaminated by outliers, however, these assumptions are not met and the power spectrum estimated by conventional estimation techniques may be fatally biased. EEG signal may be affected by artifacts, which are outliers in the statistical term. So the robust filtering estimation technique is used against those artifacts and it performs well for the contaminated EEG signal.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.11
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• pp.1605-1610
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• 2015

This study describes a new method to analyze phonocardiogram acquired from electronic stethoscope. The method uses the formant frequencies of linear prediction spectrum of the phonocardiogram and proposes a novel method for formant detection using the smoothing and the first and second derivatives. For this, stethoscope sounds are acquired in university hospital. The stethoscope signals are preprocessed and analyzed by the Burg algorithm, a kind of linear prediction analysis. Based on the linear prediction spectra, the formant frequencies are estimated. The proposed method has shown better performance in formant frequency detection than the conventional peak picking method.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2001.11b
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• pp.699-702
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• 2001

본 연구에서는 생활공간에서의 음 환경이 인체에 미치는 영향을 조사하기 위하여 긍정감성 유발 음환경으로서 시냇물 흐르는 소리를 배경으로한 명상음악을 제시하고 부정감성을 유발하는 음환경으로서 '헬리콥터소음'과 '마루삐그덕 소음'을 제시하여 자율신경계 생리반응으로서 심전도의 HRV를 분석하였다. HRV는 AR(autoregressive) 모델로 구하였으며 Power spectrum을 LF(0.01 - 0.08 Hz), MF(0.08 - 0.15 Hz), HF(0.15 - 0.5 Hz) 영역으로 나누어 LF. MF. HF 영역의 Power 및 LF/HF와 MF/(LF+HF) Power Ratio를 분석하였다.

• Journal of Biomedical Engineering Research
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• v.25 no.6
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• pp.581-587
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• 2004

Conventional power spectrum methods based on FFT, AR method are not appropriate for analyzing biomedical signals whose spectral characteristics change rapidly. On the other hand, time-frequency analysis has more desirable characteristics of a time-varying spectrum. In this study, we investigated the spectral components of heart rate variability(HRV) in time-frequency domain using time frequency analysis methods. In the various time-frequency kernels functions, we studied the suitable kernels for the analysis of HRV using synthetic HRV signals. First, we evaluated the time/frequency resolution and cross term reduction of various kernel functions. Then, from the instantaneous frequency, obtained from time-frequency distribution, the method extracting frequency components of HRV was proposed. Subjects were 17 healthy young men. A coin-stacking task was used to induce mental stress. For each subjects, the experiment time was 3 minutes. Electrocardiogram, measured during the experiment, was analyzed after converted to HRV signal. In the results, emotional stress of subjects produced an increase in sympathetic activity. Sympathetic activation was responsible for the significant increase in the LF/HF ratio. Subjects were divided into two groups with task ability. Subjects who have higher mental stress have lack of task ability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.330-330
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• 2009

For the high-performance Quantum dots-Light Emitting Diodes in the near-infrared and visible spectrum, adequate electro- and hole-transporting layers are required. The operation lifetimes of typical materials used in OLEDs are very limited and degraded especially by the oxygen and humid atmosphere. In this work, NiO was selected as a possible hole-transporting layer replacing the TPD film used in QD-LEDs. About 40-nm-thick NiO films have been deposited by the rf-sputtering method on various technical substrates such as FTO/glass, ITO/glass, and ITO/PEN. For the balance of charge carriers and quenching consideration, the resistivity of the deposited NiO films was investigated controlling the oxygen in the sputtering gas. NiO films were fabricated at room temperature and about 6mTorr using pure Ar, 2.5%-, 5%-, and 10%-mixed $O_2$ in Ar respectively. We also investigated the rf-power dependence on NiO films in the range of 80 ~ 200 Watts. The resistivity of the samples was varied from highly conductive to resistive state. Also discussed are the surface roughness of NiO films to provide the smooth surface for the deposition of QDs.

• Polymer(Korea)
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• v.26 no.2
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• pp.279-286
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• 2002

For surface modification of polymers with hydrophilic functional groups, acrylic acid was grafted and immobilized on the surface of polyethylene(PE) by cold-plasma treatment using Ar gas. The modifications were identified by analysis of ATR-IR spectrum and by the measurement of contact angles. Compared to virgin PE significant decreases in contact angle were observed for both the grafted PE and the immobilized PE. The decreases of contact angle were in the range of 47~$53^{\circ}$ for grafted PE and 23~$26^{\circ}$ for immobilized PE. The degree of hydrophilicity depended strongly on the plasma-treating time and discharge power. For the case of grafting it has show that the longer plasma-treating time, the higher hydrophilic character. For the case of immobilization, whereas, higher discharge power and longer exposure to plasma have shown the detrimental effect for the preparation of hydrophilic PE surface due to the decrease of carboxyl group by ablation effect. The decrease in adhesion strength of immobilized PE. compared to grafted PE, was also attributed to the ablation of carboxyl group.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.4
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• pp.370-377
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• 1994

DC plasma torch which is a non-transferred type was constructed and silicon nitride powders were produced. Ar gas is used as a plasma gas and gas reactants with the carrier gas are introduced beneath the plasma ignition part. Two slits are attached and a reactive quenching gas is introduced through them. Using $SiCl_4 and NH_3$ as starting materials, silicon nitride powders were produced. As-produced powders were amorphous and crystalline silicon nitrides were obtained by heating at $1420^{\circ}C$ for two hours under nitrogen atmosphere. Silicon nitride phase was identified in the XRD patterns and IR spectrum, and the image of the powders before and after heating was observed from the TEM analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.203-203
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• 2014

Due to the electrical properties such as narrow bandgap and high carrier mobility, indium antimonide (InSb) has attracted a lot of attention recently. For the fabrication of electronic or photonic devices, an etching process is required. However, during etching process, enegetic ions can induce structural damages on the bombarded surface. Especially, InSb has a very weak binding energy between In atom and Sb stom, it can be easily damaged by impingement of ions. In the previous work, to evaluate the surface properties after Ar ion beam etching, the plasma-induced structural damage on the etched InSb(100) surface had been examined by resonant Raman spectroscopy. As a result, we demonstrated the relation between the enhanced transverse optical(TO) peak in the Raman spectrum and the ion-induced structral damage near the InSb surface. In this work, the annealing effect on the etched InSb(100) surface has investigated. Annealing process was performed at $450^{\circ}C$ for 10 minute under antimony ambient. As-etched InSb(100) surface had shown a strongly enhanced TO scattering intensity in the Raman spectrum. However, the annealing process with antimony flowing caused the intensity to recover due to the structural reordering and the reduction of antimony vacancies. It proves that the origin of enhanced TO scattering is Sb vacancies. Furthermore, it shows that etching-induced damage can be cured effectively by the following annealing process under Sb ambient.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.2
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• pp.9-17
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• 2002

A high-efficiency electronic ballast for HID lamps is presented. The ballast consists of a PFC and a resonant inverter. To reduce losses of the ballast, DC link voltage should be determined by taking into account the peak voltage of lamp and the maximum flux density should be kept 0.2[T] on all of inductors. AR inductor at bridge diode is employed in order to remove currant harmonics from PFC. An inductor is connected in series with an electrolytic capacitor at DC link to reject high-frequency current. The acoustic resonance is eliminated using the stead spectrum technique. The electronic ballast for 250[W] metal-halide discharge lamp is implemented and 96[%] efficiency, no acoustic resonance and low conducted EMI level are accomplished.