• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.9
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• pp.1788-1795
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• 1992

Numerical simulations have been performed to investigate various spectral estimators used in LDV signal processing. In order to simulate a particle arrival time statistics known as the doubly stochastic poisson process, an autoregressive vector model was adopted to construct a primary velocity field. The conditional Poisson process with a random rate parameter was generated through the rescaling time process using the mean value function. The direct transform based on random sampling sequences and the standard periodogram using periodically resampled data by the sample and hold interpolation were applied to obtain power spectral density functions. For low turbulent intensity flows, the direct transform with a constant Poisson intensity is in good agreement with the theoretical spectrum. The periodogram using the sample and hold sequences is better than the direct transform in the view of the stability and the weighting of the velocity bias for high data density flows. The high Reynolds stress and high fluctuation of the transverse velocity component affects the velocity bias which increases the distortion of spectral components in the direct transform.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.47-52
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• 2013

Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.4
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• pp.935-938
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• 2010

Indium-tin-oxide (ITO) films show a low electrical resistance and high transmittance in the visible range of an optical spectrum. The transparent electrodes have to get resistivity and sheet resistance less than $1{\times}10^{-3}{\Omega}/cm$ and $10^3{\Omega}/sq$ respectively and transmittance over 80% at wavelength of 380nm~780nm. This study establishes DC magnetron sputtering process condition on ITO thin film by measuring electrical and optical properties of the thin film. As results, we obtained $300\;{\mu}{\Omega}cm$ resistivity of ITO films with good transmittance (above 90 %) under 90:10 wt% composition rate of $In_2O_3:SnO_2$. Also, we understood that the ITO thin film by DC magnetron sputtering depends on the deposition condition, especially substrate temperature, and the composition rate of $In_2O_3:SnO_2$ that is one of the most critical parameters was successfully optimized for high qualified transparent electrodes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.303-308
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• 2011

The Gallium-doped ZnO(GZO) film deposited at a temperature of $200^{\circ}C$ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of $2.0\;m{\Omega}{\cdot}cm$ because of its high crystallinity. Effect of $Al_2O_3$ oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of $Al_2O_3$ buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of $O_2/(Ar+O_2)$ flow rate ratio during the buffer layer deposition. It is considered that the $Al_2O_3$ buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.

• Journal of the Korean institute of surface engineering
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• v.37 no.6
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• pp.307-312
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• 2004

Extensive efforts have been made in an attempt to utilize photocatalytic properties of $TiO_2$ in visible range. $TiO_2$ and TiO-N thin films were made by the DC reactive magnetron sputtering method at $300^{\circ}C$. Various gases (Ar, $O_2$ and $N_2$) were used and Ti target was impressed by 0.6 kW-5.8 kW power range. The hysteresis phenomenon of the $TiO_2$ thin film as a function of the discharge voltage characteristic was observed to be higher as applied power increases. That of TiO-N thin film was occurred at the 5.8 kW power. The cross section and surface roughness of thin films were observed by FE-SEM and AFM. Average surface roughness of TiO-N thin film was observed as $15.9\AA$ and that of $TiO_2$ as $13.2\AA$. The crystal phases of both $TiO_2$ and TiO-N thin films were found to be anatase structure. The atomic $\beta$-N (396 eV peak in N 1s XPS) was shown in the rutile crystal of TiO-N and was considered acting as the origin of wavelength shift to the visible light.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.820-824
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• 2014

TiNOx multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. 4 multi-layers of $TiO_2$/TiNOx(LMVF)/TiNOx(HMVF)/Ti/substrate have been prepared with ratio of Ar and ($N_2+O_2$) gas mixture. $TiO_2$ of top layer is anti-reflection layer on double TiNOx(LMVF)/TiNOx(HMVF) layers and Ti metal of infrared reflection layer. In this study, the crystallinity and surface properties of TiNOx thin films were estimated by X-ray diffraction(XRD) and field emission scanning electron microscopy(FE-SEM), respectively. The grain size of TiNOx thin films shows to increase with increasing sputtering power. The composition of thin films has been investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The TiNOx multi-layer films show the excellent optical performance beyond 9% of reflectance in those ranges wavelength.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.5 s.248
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• pp.413-421
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• 2006

The bubble dynamics induced by direct laser heating is experimentally analyzed as a first step to assess the technical feasibility of laser-based ink-jet technology. To understand the interaction between laser light and ink, the absorption spectrum is measured for various ink colors and concentrations. The hydrodynamics of laser-generated bubbles is examined by the laser-flash photography. When an Ar ion laser pulse (wavelength 488 nm) with an output power up to 600 mW is incident on the ink solution through a transparent window, a hemispherical bubble with a diameter up to ${\sim}100{\mu}m$ can be formed with a lifetime in a few tens of microsecond depending on the laser power and the focal-spot size. Parametric study has been performed to reveal the effect of laser pulse width, output power, ink concentration, and color on the bubble dynamics. The results show that the bubble generated by a laser pulse is largely similar to that produced by a thin-film heater. Consequently, the present work demonstrates the feasibility of developing a laser-actuated droplet generation mechanism for applications in ink-jet print heads. Furthermore, the results of this work indicate that the droplet generation frequency is likely to be further increased by optimizing the process parameters.

• Journal of Sensor Science and Technology
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• v.12 no.1
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• pp.1-9
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• 2003

CsI single crystals doped with lithium, potassium or rubidium were grown by using Czochralski method at Ar gas atmosphere. The energy resolutions of CsI(Li:0.2 mole%), CsI(K:0.5 mole%) and CsI(Rb:1.5 mole%) scintillators were 14.5%, 15.9% and 17.0% for $^{137}Cs$(0.662 MeV), respectively. The energy calibration curves of CsI(Li), CsI(K) and CsI(Rb) scintillators were linear for $\gamma$-ray energy. The time resolutions of CsI(Li:0.2 mole%), CsI(K:0.5 mole%) and CsI(Rb:1.5 mole%) scintillators measured by CFT(constant-fraction timing method) were 9.0 ns, 14.7 ns and 9.7 ns, respectively. The fluorescence decay times of CsI(Li:0.2 mole%) scintillator had a fast component and slow one of ${\tau}_1=41.2\;ns$ and ${\tau}_2=483\;ns$, respectively. The fluorescence decay times of CsI(K:0.5 mole%) scintillator were ${\tau}_1=47.2\;ns$ and ${\tau}_2=417\;ns$. And the fluorescence decay times of CsI(Rb:1.5 mole%) scintillator were ${\tau}_1=41.3\;ns$ and ${\tau}_2=553\;ns$. The phosphorescence decay times of CsI(Li:0.2 mole%), CsI(K:0.5 mole%) and CsI(Rb:1.5 mole%) scintillators were 0.51 s, 0.57 s and 0.56 s, respectively.

• Microbiology and Biotechnology Letters
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• v.29 no.1
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• pp.37-42
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• 2001

An antifungal substance was purified from culture broth of Pseudomonas flulorescens 2112 that showed a broad-spectrum antagonistic activity against various phytopathogenic fungi including capsici. The substance was identified as 2,4-diacetylphloro-glucinol basd on NMR analysis. The 2,4-diacetylphloroglcinol showed antibiotic activity in broad acidic range from pH 1.0 to pH 9.0. About 83% of initial activity was remained after incubation for 30min ar $60^{\circ}C$, however, the activity was dropped up to 50% after 30 min incubation in $80^{\circ}C$. When the nucleotides of P. capsici treated with 2,4-diacetylphloroglucinol were labeled with[$^{3}$ H]-Adenin, the newly synthesized and radioactive-labeled RNA was significantly reduced than those of untreated P. capsici. indicating that the 2,4-diacetylphloroglucinol inhibits RNA synthesis.

• Journal of Advanced Marine Engineering and Technology
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• v.24 no.6
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• pp.61-69
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• 2000

Indium-Tin Oxide (ITO) films were prepared on the commercial glass substrate by the Magnetron Sputtering method. The target was a 90wt.% $In_2O_3$-10wt.% $SnO_2$with 99.99% purity. The ITO films deposited by changing the partial pressure of oxygen gas ($O_2$/(Ar+$O_2$)) of 2, 3 and 5% as well as by changing the substrate temperature of $300^{\circ}C$ or $500^{\circ}C$. The influence of substrate pre-annealing and pre-cleaning on the quality of ITO film were examined, in which the substrate temperature was $500^{\circ}C$ and oxygen partial pressure was 3%. The characteristics of films were examined by the 4-point probe, Hall effect measurement system, SEM, AFM, Spectrophotometer, and X-ray diffraction. The optimum ITO films have been obtained when the substrate temperature is $500^{\circ}C$ and oxygen partial pressure is 3%. At optimum condition, the film showed transmittance of 81%, sheet resistivity of $226\Omegatextrm{cm}^2$, resistivity($\rho$) of $5.4\times10^{-3}\Omega$cm, carrier concentration of $1.0\times10^{19}cm^{-3}$, and carrier mobility of $150textrm{cm}^2$Vsec. From XRD spectrum, c(222) plane was dominant in the case of substrate temperature at $300^{\circ}C$, without regarding to oxygen partial pressure. However, in the case of substrate temperature at $500^{\circ}C$, c(400) plane was grown together with c(222) plane, only for oxygen partial pressure of 2 and 3%. In both case of chemical and ultrasonic cleaning without pre-annealing the substrate, it showed much almost same sheet resistivity, resistivity($\rho$), transmittance, carrier concentration, and carrier mobility. In case of $500^{\circ}C$/60min pre-annealing before ITO film deposited, both transimittance and carrier mobility are better than no pre-annealing, because pre-annealing is supposed to remove alkari ions diffusion from substrate. ITO film deposited on the Corning 0080 sybstrate showed a little bit better sheet resistivity, resistivity($\rho$), transimittance, carrier concentration than the film deposited on commercial glass. But no differences between Corning substrate and pre-annealed commercial glass substrate are found.