• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.74-79
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• 2022

In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y₂O₃ and Y₃Al₅O₁₂ (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF₄, O₂, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H₂SO₄(3):H₂O₂(1)) to remove the defect-causing surface fluorinated film. APS-Y₂O₃ and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.

• 한국산업융합학회 논문집
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• 제21권5호
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• pp.235-240
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• 2018

The generator of an automobile supplies electric voltage and current for various electric components. The supplied voltage can be changed by sudden variation of the electric load. The voltage was controlled by independent power supply in the study. The TPS and APS signal was changes as the voltage of the power supply. The ECU output voltage and OBD signal voltage was changed also as the variance of the power supply.

• 광학세계
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• 제8권2호통권42호
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• pp.69-70
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• 1996

• 전기저널
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• 통권378호
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• pp.15-24
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• 2008

• Archives of Plastic Surgery
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• 제49권1호
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• pp.1-2
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• 2022

• 인포메이션 디스플레이
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• 제24권2호
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• pp.51-56
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• 2023

• 멤브레인
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• 제23권6호
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• pp.469-474
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• 2013

알칼리 수전해용 격막으로 사용하기 위해 음이온교환막을 제작하였다. 음이온교환막은 PVC (polyvinyl chloride)를 출발물질로 하여 클로로메틸화 및 아민화에 의해 제작하였다. 제작한 막은 막 특성(막 저항, 이온교환용량)을 평가하였다. 제작한 음이온교환막의 1M NaOH수용액에서의 최저 막 저항은 $2.9{\Omega}{\cdot}cm^2$를 나타냈다. 이 막은 2.17 meq./g-dry-membrane의 이온교환용량과 43.4%의 함수율을 보였다. 제작한 음이온교환막의 막 특성을 시판의 막 특성과 비교 평가하였다. 1M NaOH수용액에서의 막 저항은 AHT>IOMAC>Homemade membrane>AHA>APS=AFN의 순으로 저항 값이 높았다. 이온교환 용량은 Homemade membrane>AFN>APS>AHT>AHA>IOMAC의 순으로 높은 값을 가졌다.

• Advances in materials Research
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• 제3권4호
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• pp.183-197
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• 2014

Copolymers of gelatin and poly (vinyl alcohol), (PVA) grafted by acrylic acid (AAc) with excellent water absorption and retention abilities under neutral conditions were successfully synthesized using $^{60}Co$ gamma radiations in presence of ammonium persulphate (APS), as water soluble initiator and sodium bicarbonate ($NaHCO_3$) as foaming agent. The optimum synthesis conditions pertaining to maximum swelling percentage were evaluated as a function of gelatin/PVA ratio, amount of water, concentration of APS, $NaHCO_3$, monomer concentration and total irradiation dose. Maximum percent swelling (1694.59%) of the copolymer, gelatin-co-PVA, was obtained at optimum $[APS]=2.92{\times}10^{-1}mol/L$, $[NaHCO_3]=7.94{\times}10^{-2}mol/L$ and 1.5 mL of water at total dose of 31.104 kGy while in case of grafted copolymer, (gelatin-co-PVA)-g-poly(AAc), maximum percent swelling (560.86%) was obtained using $8.014{\times}10^{-1}mol/L$ of AAc in 9 mL water with 31.104 kGy preirradiation dose. The pristine and grafted copolymers were characterized by Fourier Transform Infrared Spectroscopy (FTIR), Scanning electron Microscopy (SEM), Thermal gravimetric analysis (TGA) and X-Ray Diffraction (XRD) methods. The copolymers loaded with an antiseptic, Povidone, were used as wound dressing materials for wounded gastrocnemius muscle of mice and the results exhibit that (gelatin-co-PVA)-g-poly (AAc) copolymer is a potent wound dressing material as compared to the copolymer.

• 한국콘텐츠학회논문지
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• 제14권1호
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• pp.537-547
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• 2014

본 논문에서는 ALT 보드와 NetLogo 확장 모듈을 개발하여 능동적 참여 모의실험 (Active Participatory Simulation: APS) 학습이 가능하도록 한다. 기존 참여 모의실험 학습에서도 실험이 수행되는 동안 학생들은 HubNet을 통하여 클라이언트로서 실험에 참여할 수 있다. 하지만 HubNet 서버만이 하나의 외부 모듈과 연결되기 때문에 다수의 클라이언트가 참여하는 이중초점 모델링 기반 학습이 불가능하다. 따라서 클라이언트의 참여와 실험 및 측정 데이터를 수집하기 위하여 ATmega32 기반의 ALT 보드를 개발한다. 또한 이 입력된 데이터를 HubNet 서버와 교환할 수 있는 TCP/IP 소켓 기반 Java 확장 모듈을 개발한다. ALT 보드와 확장 모듈을 통하여 APS 학습 환경 구축이 가능하다. 이를 위한 NetLogo 프로그래밍 방법을 소개하고 학습 예시를 보여 과학교육에 활용될 수 있는 방안을 모색한다.

• 센서학회지
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• 제23권5호
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• pp.332-336
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• 2014

In this paper, we propose a complementary metal oxide semiconductor (CMOS) binary image sensor with a gate/body-tied (GBT) PMOSFET-type photodetector for high-speed operation. The GBT photodetector of an active pixel sensor (APS) consists of a floating gate ($n^+$-polysilicon) tied to the body (n-well) of the PMOSFET. The p-n junction photodiode that is used in a conventional APS has a good dynamic range but low photosensitivity. On the other hand, a high-gain GBT photodetector has a high level of photosensitivity but a narrow dynamic range. In addition, the pixel size of the GBT photodetector APS is less than that of the conventional photodiode APS because of its use of a PMOSFET-type photodetector, enabling increased image resolution. A CMOS binary image sensor can be designed with simple circuits, as a complex analog to digital converter (ADC) is not required for binary processing. Because of this feature, the binary image sensor has low power consumption and high speed, with the ability to switch back and forth between a binary mode and an analog mode. The proposed CMOS binary image sensor was simulated and designed using a standard CMOS $0.18{\mu}m$ process.