• 제목/요약/키워드: ALQ-X

검색결과 54건 처리시간 0.027초

ALQ-X ECM 포드 비행 적합성 인증 (Flight Compatibility Certification of ALQ-X ECM Pod)

  • 전승문;임재문
    • 한국항공우주학회지
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    • 제33권4호
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    • pp.91-99
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    • 2005
  • ALQ-X ECM 포드를 KF-16D와 RF-4C 항공기에 장착하기 위한 비행적합성 인증을 수행하였다. MIL-HDBK-1763에 부합하는 외부장착 스토어 인증 절차를 계획한 후 유사성 분석, 기존 스토어 질량 및 관성모멘트 분석, 구조해석 및 시험, 지상진동시험 및 플러터해석을 수행하여 비행시험 수행에 대한 안전성을 확인하였다. ALQ-X 장착 형상을 대표하는 비행 형상으로 MIL-HDBK-1763 Test 250 비행시험을 하였다. ALQ-X 장착 전, 후의 비행특성 차이를 분석하여 조종성을 평가 하고 구조건전성과 내구성은 계측데이터를 함께 분석하여 ALQ-X가 KF-16D 및 RF-4C와 적합성이 있음을 확인하였다. 그 결과로서 ALQ-X를 기존에 인증된 ALQ-88 및 ALQ-119와 동일하게 운용할 수 있음을 인증하였다. ALQ-X 비행인증 결과로서 도입 전투기에 대한 TYPE III 비행적합성 인증, 시험데이터를 사용한 플러터 해석 프로그램을 개발, MIL-STD-1553B 데이터버스를 사용한 비행시험 데이터를 획득할 수 있는 기법과 같은 기술적 성과를 거두었다. 본 비행인증 결과는 향후 국내에서 수행할 Type III 형식의 외부장착 스토어 비행인증의 모델케이스가 될 것으로 기대한다.

시험 모달 데이터를 이용한 F-16 항공기의 플러터 해석 (Flutter Analysis of F-16 Aircraft Using Test Modal Data)

  • 변관화;전승문
    • 한국항공우주학회지
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    • 제34권4호
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    • pp.76-82
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    • 2006
  • 새로이 개발된 ALQ-X ECM 포드를 장착한 KF-16D 항공기의 플러터 해석을 수행하였다. 해석에 필요한 기체 고유진동모드 데이터를 지상진동시험 결과로써 직접 사용하는 방법을 제시하고 기존 자료를 이용하여 타당성을 확인하였다. 랜딩기어로 지지된 KF-16D 항공기에 대한 지상진동시험 결과를 비행 상태의 모달 데이터로 변환하였다. KF-16D 항공기에 ALQ-X를 장착한 형상과 기존의 ALQ-119 장착 형상에 대한 플러터 속도를 비교함으로써 새로이 개발된 ECM 포드를 기존의 ECM 포드와 동일한 비행영역에서 사용이 가능함을 입증하였다.

Top-Emitting Organic Light-Emitting Diodes Based on the Interfacial Electronic Structures of Bis(8-Quinolinolato)Aluminum (III)/Barium

  • 임종태;염근영
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2007년도 춘계학술발표회 초록집
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    • pp.5-6
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    • 2007
  • 반투명 전도성 음극 (semi-transparent conducting cathode)인 Ba (x nm)/Au (20 nm)/ITO (100 nm)을 이용하여 전면발광 유기전계 발광 소자 (top-emitting organic light-emitting didodes, TEOLEDs)를 제작했다. Ba과 bis(8-quinolinolato)aluminum (III) ($Alq_3$) 계면의 전자구조는 엑스선 광전자 분광법 (X-ray photoelectron spectroscopy, XPS), 자외선 광전자 분광법 (ultraviolet photoelectron spectroscopy, UPS) 및 가까운 끝머리 엑스선 흡수 미세구조 (near-edge x-ray absorption fine structure, NEXAFS) 스펙트럼의 광 방출 특성을 통하여 조사되었다. $Alq_3$/Ba 계면 특성에 있어서 XPS와 NEXAFS 특성에 의하면, $Alq_3$ (10.0 nm) 위에 Ba이 연속적으로 증착됨에 따라 Ba으로부터 $Alq_3$로의 전자전달 (electron charge transfer) 특성은 꾸준희 증가된다. 그러나 Ba의 두께가 1.0 nm 이상 초과되면 Ba의 전자전달에 기인한 반응성때문에 $Alq_3$의 분자구조가 해리된다. 한편, 제작된 TEOLEDE의 전류-전압-휘도 곡선의 경우에서도 바륨의 증착 두께가 1.0 nm일 때 가장 우수한 구동특성을 나타냈다.

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ALQ-X 전자방해체계용 원격전송 장치 개발 (The Development of a Telemetry System for ALQ-X)

  • 남윤권;이병남;이승근;류정호;이동근
    • 한국군사과학기술학회지
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    • 제8권1호
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    • pp.56-61
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    • 2005
  • A novel method for telemetering flight operational data of airborne jammer to ground station is presented. The design and construction of an onboard telemetry transmitting set and a ground receiving set which are necessary for realizing this novel method is described. Using this novel method, ALQ-X, airborne jammer, can immediately transmit the gathered data during flight without additional exclusive telemetry set.

Sequential Formation of Multiple Gap States by Interfacial Reaction between Alq3 and Alkaline-earth Metal

  • Kim, Tae Gun;Kim, Jeong Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.129.2-129.2
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    • 2013
  • Electron injection enhancement at OLED (organic light-emitting diodes) cathode side has mostly been achieved by insertion of a low work function layer between metal electrode and emissive layer. We investigated the interfacial chemical reactions and electronic structures of alkaline-earth metal (Ca, Ba)/Alq3 [tris(8-hydroxyquinolinato)aluminium] and Ca/BaF2/Alq3 using in-situ X-ray & ultraviolet photoelectron spectroscopy. The alkaline-earth metal deposited on Alq3 generates two energetically separated gap states in sequential manner. This phenomenon is explained by step-by-step charge transfer from alkali-earth metal to the lowest unoccupied molecular orbital (LUMO) states of Alq3, forming new occupied states below Fermi level. The BaF2 interlayer initially prevents from direct contact between Alq3 and reactive Ca metal, but it is dissociated into Ba and CaF2. However, as the Ca thickness increases, the Ca penetrates the interlayer to directly participate in the reaction with underlying Alq3. The influence of the multiple gap state formation by the interfacial chemical reaction on the OLED performance will be discussed.

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OLED소자의 수명에 미치는 다층 보호막의 영향 (The Effect of Multilayer Passivation Film on Life Time Characteristics of OLED Device)

  • 주성후;양재웅
    • 한국표면공학회지
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    • 제45권1호
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    • pp.20-24
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    • 2012
  • Multilayer passivation film on OLED with organic/inorganic hybrid structure as to diminish the thermal stress and expansion was researched to protect device from the direct damage of $O_2$ and $H_2O$ and improve life time characteristics. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The films consist of ITO(150 nm)/ELM200_HIL(50 nm)/ELM002_HTL(30 nm)/$Alq_3$: 1 vol.% Rubrene(30 nm)/$Alq_3$(30 nm) and LiF(0.7 nm)/Al(100 nm) which were formed in that order. Using LiF/$SiN_x$ as a buffer layer was determined because it significantly improved life time characteristics without suffering damage in the process of forming passivation film. Multilayer passivation film on buffer layer didn't produce much change in current efficiency, while the half life time at 1,000 $cd/m^2$ of OLED/LiF/$SiN_x$/E1/$SiN_x$ was 710 hours which showed about 1.5 times longer than OLED/LiF/$SiN_x$/E1 with 498 hours. futhermore, OLED/LiF/$SiN_x$/E1/$SiN_x$/E1/$SiN_x$ with 1301 hours showed about twice than OLED/LiF/$SiN_x$/E1/$SiN_x$ which demonstrated that superior characteristics of life time was obtained in multilayer passivation film. Through the above result, it was suggested using LiF/$SiN_x$ as a buffer layer could reduce the damage from the difference of thermal expansion coefficient in OLED with protective films, and epoxy layer in multilayer passivation film could function like a buffer between $SiN_x$ inorganic layers with relatively large thermal stress.

SiNx와 금속막을 이용한 플렉시블 OLED 봉지 방법 (Encapsulation Method of Flexible OLED Using SiNx and Metal Film)

  • 이효선;주성후
    • 한국표면공학회지
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    • 제47권3호
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    • pp.99-103
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    • 2014
  • The encapsulation method of flexible organic light emitting devices (OLEDs) was investigated for the structure of ITO / 2-TNATA / NPB / $Alq_3$ : Rubrene (1 vol.%) / $Alq_3$ / LiF / Al / $Alq_3$ / LiF / Al (OLED #1), on which $SiN_x$ thin film was deposited and metal film was attached to protect the damage of OLED from oxygen and moisture. The $SiN_x$ thin film was deposited by plasma enhanced chemical vapor deposition (PECVD) method using $SiH_4$ of 20 sccm and $N_2$ of 15~35 sccm as reactor gases. The optimum $SiN_x$ deposition condition was found to be 20 sccm $SiH_4$ and 20 sccm $N_2$ from the Ca test of the fabricated $SiN_x$ thin film. The life time of OLED #1, OLED #1 / $SiN_x$ 200 nm, OLED #1 / $SiN_x$ 400 nm and OLED #1 / $SiN_x$ 400 nm / metal film was 7, 12, 25, and 45 hours, respectively. In conclusion, it has been shown that the lifetime of OLEDs can be improved more than 6 times by $SiN_x$ film and a metal film encapsulation.

Stacked Emissive 구조를 이용한 2-파장 방식의 백색 유기 발광다이오드

  • 장지근;김희원;강의정;신세진;안종명;신현관;장호정
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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    • pp.190-197
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    • 2006
  • 2파장 백색 발광층의 구성에서 청색 재료로 GDI602 또는 GDI602: GDI691(2%)을, 황색 재료로 Alq3:Rubrene(10%)를 사용하여 새로운 백색 유기발광다이오드를 제작하고 이들의 특성을 분석하였다. 제작된 소자들은 12V의 구동전압에서 GDI602/A1q3:Rubrene(10%) 발광층을 갖는 경우 약 $950\;Cd/m^2$의 휘도와 0.8 lm/W의 효율을, GDI602:GDI691(2%)/Alq3:Rubrene 발광층을 갖는 경우 약 $1800\;Cd/m^2$의 휘도와 1.2 lm/W의 효율을 나타내었다. 또한 발광 스펙트럼의 특성으로는 인가전압에 따라 중심파장의 위치는 일정하나 2파장 사이의 상대적 세기가 변화되었으며, 인가전압이 증가할 경우 CIE 색좌표가 청색 방향으로 다소 이동되었다. GDI602/ Alq3:Rubrene(10%) 발광층을 갖는 소자의 경우 9V에서 x=0.33, y=0.32로, GDI602:GDI691(2%)/Alq3:Rubrene 발광층을 갖는 소자의 경우 6V에서 x=0.32, y=0.33으로 순수 백색광에 가까운 특성이 얻어졌다.

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NEXAFS 분광법에 의한 Alq3/Ba과 Alq3/Au의 계면에서의 전자 천이에 관한 연구 (A Study on the Electron Transfer at the Alq3/Ba and Alq3/Au Interfaces by NEXAFS Spectroscopy)

  • 임수용;주성후;양재웅
    • 한국표면공학회지
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    • 제45권1호
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    • pp.15-19
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    • 2012
  • Tris(8-quinolinolato)aluminum(III); $Alq_3$ has been frequently used as an electron transporting layer in organic light-emitting diodes. Either Ba with a low work function or Au with a high work function was deposited on $Alq_3$ layer in vacuum. And then, the behaviors of electron transition at the $Alq_3$/Ba and $Alq_3$/Au interfaces were investigated by using the near edge x-ray absorption fine structure (NEXAFS) spectroscopy. In the each interface, the energy levels of unoccupied obitals were assigned as ${\pi}^*$(LUMO, LUMO+1, LUMO+2 and LUMO+3) and ${\sigma}^*$. And the relative intensities of these peaks were investigated. In an oxygen atom composing $Alq_3$ molecule, the relative intensities for a transition from K-edge to LUMO+2 were largely increased as Ba coverage (${\Theta}_{Ba}$, 2.7 eV) with a low work function was in-situ sequentially increased on $Alq_3$ layer. In contrast, the relative intensities for the LUMO+2 peak were reduced as Au coverage (${\Theta}_{Au}$, 5.1 eV) with a high work function were increased on $Alq_3$ layer. This means that the electron transition by photon in oxygen atom which consists in the unoccupied orbitals in $Alq_3$ molecule, largely depends on work function of a metal. Meanwhile, in the case of electron transition in a carbon atom, as ${\Theta}_{Ba}$ was increased on $Alq_3$, the relative intensity from K-edge to ${\pi}_1{^*}$ (LUMO and LUMO+1) was slightly decreased, and from K-edge to ${\pi}_2{^*}$ (LUMO+2 and LUMO+3) was somewhat increased. This rising of the energy state from ${\pi}_1{^*}$ to ${\pi}_2{^*}$ exhibits that electrons provided by Ba would contribute to the process of electron transition in the $Alq_3$/Ba interfaces. As shown in above observation, the analyses of NEXAFS spectra in each interface could be important as a basic data to understand the process of electron transition by photon in pure organic materials.

DCJTB를 Doping한 적색 유기 발광소자의 특성 (Characteristics of the red organic electroluminescect devices doped with DCJTB)

  • 최완지;임민수;정득영;이정구;임기조
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.1034-1037
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    • 2002
  • In this study, we fabricated red organic electrolu-minescent device with a doping material (DCJTB), and The cell structure used ITO:indium tin oxide $[20{\Omega}]$/CuPc:Hole injection layer 20nm/NPB: Hole transfer layer 40nm/$Alq_3$ (host) + DCJTB(1% or 3%) (guest) Emitting layer 40nm/$Alq_3$ : Electron transfer layer 30nm/Al :Cathode layer 150nm. the luminescent layer consisted of a host material. 8-hydrozyquinoline aluminum $(Alq_3)$, and DCJTB dye as the dopant. a stable red emission (chromaticity coordinates : x=0.64, y=0.36) was obtained in this cell with the luminance range of $100-600cd/m^2$. we study the electrical and optical properties of devices.

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