• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.33 no.4
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• pp.91-99
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• 2005

Flight compatibility certification is performed to substantiate the compatibility between ALQ-X ECM pod and KF-16D/RF-4C aircraft. A certification plan for the ALQ-X flight compatibility is established. Similarity analysis, mass/inertia analysis, structural analysis/test, and ground vibration test/flutter analysis are made to support the safety of MIL-HDBK-1763 Test 250 (Captive compatibility flight profile). Aircraft flew along flight envelope boundary with representative ALQ-X configurations. Handling qualities are evaluated by comparing flight characteristics of the aircraft with and without ALQ-X. Structural integrity and endurance is evaluated using measured flight test data. Results of these flight tests showed that ALQ-X is compatible with KF-16D/RF-4C without altering the flight envelope which has originally been certified for ALQ-88 and ALQ-119 ECM pods. ALQ-X certification program made following technical achievements: Type III certification for foreign designed fighter, flutter analysis program development using GVT results, and utilization of MIL-STD-1553B data bus in flight test.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.34 no.4
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• pp.76-82
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• 2006

Flutter analyses are performed for the KF-16D aircraft with brand new ALQ-X ECM pod. A flutter analysis method using test modal data is proposed and validated using published F-16 modal data and flutter analysis results. Ground vibration test is performed for KF-16D stands on its landing gears. Attained modal data are transformed to free-free condition of KF-16D aircraft with ALQ-X pod and ALQ-119 pod, respectively. As the results of comparison of flutter analyses, ALQ-X is cleared to be operated in the flight envelope authorized for existing ECM pods.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.5-6
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• 2007

반투명 전도성 음극 (semi-transparent conducting cathode)인 Ba (x nm)/Au (20 nm)/ITO (100 nm)을 이용하여 전면발광 유기전계 발광 소자 (top-emitting organic light-emitting didodes, TEOLEDs)를 제작했다. Ba과 bis(8-quinolinolato)aluminum (III) ($Alq_3$) 계면의 전자구조는 엑스선 광전자 분광법 (X-ray photoelectron spectroscopy, XPS), 자외선 광전자 분광법 (ultraviolet photoelectron spectroscopy, UPS) 및 가까운 끝머리 엑스선 흡수 미세구조 (near-edge x-ray absorption fine structure, NEXAFS) 스펙트럼의 광 방출 특성을 통하여 조사되었다. $Alq_3$/Ba 계면 특성에 있어서 XPS와 NEXAFS 특성에 의하면, $Alq_3$ (10.0 nm) 위에 Ba이 연속적으로 증착됨에 따라 Ba으로부터 $Alq_3$로의 전자전달 (electron charge transfer) 특성은 꾸준희 증가된다. 그러나 Ba의 두께가 1.0 nm 이상 초과되면 Ba의 전자전달에 기인한 반응성때문에 $Alq_3$의 분자구조가 해리된다. 한편, 제작된 TEOLEDE의 전류-전압-휘도 곡선의 경우에서도 바륨의 증착 두께가 1.0 nm일 때 가장 우수한 구동특성을 나타냈다.

• Journal of the Korea Institute of Military Science and Technology
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• v.8 no.1 s.20
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• pp.56-61
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• 2005

A novel method for telemetering flight operational data of airborne jammer to ground station is presented. The design and construction of an onboard telemetry transmitting set and a ground receiving set which are necessary for realizing this novel method is described. Using this novel method, ALQ-X, airborne jammer, can immediately transmit the gathered data during flight without additional exclusive telemetry set.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.129.2-129.2
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• 2013

Electron injection enhancement at OLED (organic light-emitting diodes) cathode side has mostly been achieved by insertion of a low work function layer between metal electrode and emissive layer. We investigated the interfacial chemical reactions and electronic structures of alkaline-earth metal (Ca, Ba)/Alq3 [tris(8-hydroxyquinolinato)aluminium] and Ca/BaF2/Alq3 using in-situ X-ray & ultraviolet photoelectron spectroscopy. The alkaline-earth metal deposited on Alq3 generates two energetically separated gap states in sequential manner. This phenomenon is explained by step-by-step charge transfer from alkali-earth metal to the lowest unoccupied molecular orbital (LUMO) states of Alq3, forming new occupied states below Fermi level. The BaF2 interlayer initially prevents from direct contact between Alq3 and reactive Ca metal, but it is dissociated into Ba and CaF2. However, as the Ca thickness increases, the Ca penetrates the interlayer to directly participate in the reaction with underlying Alq3. The influence of the multiple gap state formation by the interfacial chemical reaction on the OLED performance will be discussed.

• Journal of the Korean institute of surface engineering
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• v.45 no.1
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• pp.20-24
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• 2012

Multilayer passivation film on OLED with organic/inorganic hybrid structure as to diminish the thermal stress and expansion was researched to protect device from the direct damage of $O_2$ and $H_2O$ and improve life time characteristics. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The films consist of ITO(150 nm)/ELM200_HIL(50 nm)/ELM002_HTL(30 nm)/$Alq_3$: 1 vol.% Rubrene(30 nm)/$Alq_3$(30 nm) and LiF(0.7 nm)/Al(100 nm) which were formed in that order. Using LiF/$SiN_x$ as a buffer layer was determined because it significantly improved life time characteristics without suffering damage in the process of forming passivation film. Multilayer passivation film on buffer layer didn't produce much change in current efficiency, while the half life time at 1,000 $cd/m^2$ of OLED/LiF/$SiN_x$/E1/$SiN_x$ was 710 hours which showed about 1.5 times longer than OLED/LiF/$SiN_x$/E1 with 498 hours. futhermore, OLED/LiF/$SiN_x$/E1/$SiN_x$/E1/$SiN_x$ with 1301 hours showed about twice than OLED/LiF/$SiN_x$/E1/$SiN_x$ which demonstrated that superior characteristics of life time was obtained in multilayer passivation film. Through the above result, it was suggested using LiF/$SiN_x$ as a buffer layer could reduce the damage from the difference of thermal expansion coefficient in OLED with protective films, and epoxy layer in multilayer passivation film could function like a buffer between $SiN_x$ inorganic layers with relatively large thermal stress.

• Journal of the Korean institute of surface engineering
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• v.47 no.3
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• pp.99-103
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• 2014

The encapsulation method of flexible organic light emitting devices (OLEDs) was investigated for the structure of ITO / 2-TNATA / NPB / $Alq_3$ : Rubrene (1 vol.%) / $Alq_3$ / LiF / Al / $Alq_3$ / LiF / Al (OLED #1), on which $SiN_x$ thin film was deposited and metal film was attached to protect the damage of OLED from oxygen and moisture. The $SiN_x$ thin film was deposited by plasma enhanced chemical vapor deposition (PECVD) method using $SiH_4$ of 20 sccm and $N_2$ of 15~35 sccm as reactor gases. The optimum $SiN_x$ deposition condition was found to be 20 sccm $SiH_4$ and 20 sccm $N_2$ from the Ca test of the fabricated $SiN_x$ thin film. The life time of OLED #1, OLED #1 / $SiN_x$ 200 nm, OLED #1 / $SiN_x$ 400 nm and OLED #1 / $SiN_x$ 400 nm / metal film was 7, 12, 25, and 45 hours, respectively. In conclusion, it has been shown that the lifetime of OLEDs can be improved more than 6 times by $SiN_x$ film and a metal film encapsulation.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.190-197
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• 2006

2파장 백색 발광층의 구성에서 청색 재료로 GDI602 또는 GDI602: GDI691(2%)을, 황색 재료로 Alq3:Rubrene(10%)를 사용하여 새로운 백색 유기발광다이오드를 제작하고 이들의 특성을 분석하였다. 제작된 소자들은 12V의 구동전압에서 GDI602/A1q3:Rubrene(10%) 발광층을 갖는 경우 약 $950\;Cd/m^2$의 휘도와 0.8 lm/W의 효율을, GDI602:GDI691(2%)/Alq3:Rubrene 발광층을 갖는 경우 약 $1800\;Cd/m^2$의 휘도와 1.2 lm/W의 효율을 나타내었다. 또한 발광 스펙트럼의 특성으로는 인가전압에 따라 중심파장의 위치는 일정하나 2파장 사이의 상대적 세기가 변화되었으며, 인가전압이 증가할 경우 CIE 색좌표가 청색 방향으로 다소 이동되었다. GDI602/ Alq3:Rubrene(10%) 발광층을 갖는 소자의 경우 9V에서 x=0.33, y=0.32로, GDI602:GDI691(2%)/Alq3:Rubrene 발광층을 갖는 소자의 경우 6V에서 x=0.32, y=0.33으로 순수 백색광에 가까운 특성이 얻어졌다.

• Journal of the Korean institute of surface engineering
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• v.45 no.1
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• pp.15-19
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• 2012

Tris(8-quinolinolato)aluminum(III); $Alq_3$ has been frequently used as an electron transporting layer in organic light-emitting diodes. Either Ba with a low work function or Au with a high work function was deposited on $Alq_3$ layer in vacuum. And then, the behaviors of electron transition at the $Alq_3$/Ba and $Alq_3$/Au interfaces were investigated by using the near edge x-ray absorption fine structure (NEXAFS) spectroscopy. In the each interface, the energy levels of unoccupied obitals were assigned as ${\pi}^*$(LUMO, LUMO+1, LUMO+2 and LUMO+3) and ${\sigma}^*$. And the relative intensities of these peaks were investigated. In an oxygen atom composing $Alq_3$ molecule, the relative intensities for a transition from K-edge to LUMO+2 were largely increased as Ba coverage (${\Theta}_{Ba}$, 2.7 eV) with a low work function was in-situ sequentially increased on $Alq_3$ layer. In contrast, the relative intensities for the LUMO+2 peak were reduced as Au coverage (${\Theta}_{Au}$, 5.1 eV) with a high work function were increased on $Alq_3$ layer. This means that the electron transition by photon in oxygen atom which consists in the unoccupied orbitals in $Alq_3$ molecule, largely depends on work function of a metal. Meanwhile, in the case of electron transition in a carbon atom, as ${\Theta}_{Ba}$ was increased on $Alq_3$, the relative intensity from K-edge to ${\pi}_1{^*}$ (LUMO and LUMO+1) was slightly decreased, and from K-edge to ${\pi}_2{^*}$ (LUMO+2 and LUMO+3) was somewhat increased. This rising of the energy state from ${\pi}_1{^*}$ to ${\pi}_2{^*}$ exhibits that electrons provided by Ba would contribute to the process of electron transition in the $Alq_3$/Ba interfaces. As shown in above observation, the analyses of NEXAFS spectra in each interface could be important as a basic data to understand the process of electron transition by photon in pure organic materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1034-1037
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• 2002

In this study, we fabricated red organic electrolu-minescent device with a doping material (DCJTB), and The cell structure used ITO:indium tin oxide $[20{\Omega}]$/CuPc:Hole injection layer 20nm/NPB: Hole transfer layer 40nm/$Alq_3$ (host) + DCJTB(1% or 3%) (guest) Emitting layer 40nm/$Alq_3$ : Electron transfer layer 30nm/Al :Cathode layer 150nm. the luminescent layer consisted of a host material. 8-hydrozyquinoline aluminum $(Alq_3)$, and DCJTB dye as the dopant. a stable red emission (chromaticity coordinates : x=0.64, y=0.36) was obtained in this cell with the luminance range of $100-600cd/m^2$. we study the electrical and optical properties of devices.