• Journal of the Korean Chemical Society
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• v.33 no.2
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• pp.232-237
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• 1989

The elution mechanism of rare earth elements in cation exchange resin which was substituted with $NH_4^+,\;Zn^{2+}\;or\;Al^{3+}$ as a retaining ion had been investigated. Rare earths or rare earths-EDTA complex solution was loaded on the top of resin bed and eluted with 0.0269M EDTA solution. When the rare earth-EDTA complex was adsorbed on the $Zn^{2+}\;or\;Al^{3+}$ resin form, retaining ion was complexed with EDTA and liberated rare earths was adsorbed in the resin again. Adsorbed rare earths in resin phase could be eluted by the complexation reaction with EDTA eluent. On $NH_4^+$ resin form, the rare earth-EDTA complex which had negative charge could not adsorbed on the cation exchange resin because the complexation reaction between $NH_4^+$ and EDTA was impossible. So the elution time was much shorter than in $Zn^{2+}\;or\;Al^{3+}$ resin form. When the rare earths solution was loaded on the $Zn^{2+},\;Al^{3+}$ resin form bed, rare earths was adsorbed in the resin and the retaining ion was liberated. Adsorbed rare earths in resin bed was exchanged by EDTA eluent forming rare earths-EDTA complex, and eluted through these processes. On $NH_4^+$ resin form, rare earths loaded was adsorbed by exchange reaction with $NH_4^+$. As the EDTA eluent was added, rare earths was liberated from resin forming negatively charged rare earth-EDTA complex and eluted without any exchange reaction. So the elution time was greatly shortened and there was no metallic ion except rare earths in effluent. When the $Zn^{2+}\;and\;Al^{3+}$ was used as retaining ion, the pH of efflent was decreased seriousely because the $H^+$ liberated from EDTA molecule.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.626-631
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• 1997

AlSiCa powders were prepared from the domestic Hadong Kaolin ($Al_2O_3{\cdot}2SiO_2{\cdot}2H_2O$). As a result of the reaction of Hadong Kaolin and carbon powder at reducing atmosphere, $Al_2O_3{\cdot}SiC$ composite started to form at $1300^{\circ}C$ and completed at $1400^{\circ}C$. The optimum amount of carbon was 1:4 in mole ratio. It was found that only bright-green $\beta-SiC$ phase forms when the mixture was packed without carbon powder in alumina crucible.

• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.501-512
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• 1990

Al2O3 and 0.25wt% MgO-doped Al2O3 powders were made from the alcohol solution of Al(NO3)3.9H2O and Mg(NO3)2.6H2O by spray pyrolysis method. Each powder was prepared at 900 and 100$0^{\circ}C$. Powders prepared at 90$0^{\circ}C$ were amorphous phase, but prepared at 100$0^{\circ}C$ wre mainly ${\gamma}$-Al2O3 crystalline form. Particle size of the MgO-doped Al2O3 powders was in the range of 0.2-2${\mu}{\textrm}{m}$, but undooped powders shwoed comparatively wider range of particle size. All the powders prepared at 900 and 100$0^{\circ}C$ were transformed to $\alpha$-Al2O3 crystalline form by calcination at 110$0^{\circ}C$ for 1hr. Each powder was sintered at 1600, 1650 and 1$700^{\circ}C$ for 2hrs. MgO-doped Al2O3 body sintering at 1$650^{\circ}C$ showed 99% of relative density but undooped Al2O3 showed 95% of relative density, even sintered at higher temperature of 1$700^{\circ}C$.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.207-212
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• 1998

By comparison of the experimental results in two systems of ZnO varistors, it's appear that Sb2O3 is the indispensable element for twining in ZnO varistors and the Zn7Sb2O12 spinel acts as the nucleus to form twins. Al2O3 is not the origin of twining in ZnO varistor, but it was found that Al2O3 could strengthen the twining and form a deformation twining by ZnAl2O4 dragging and pinning effect. The inhibition ratios of grain and nonuniformity of two systems ZnO varistors increase with the increase of Al2O3 content. The twins affect the inhibition of grain growth, the mechanism could be explained follow as: twins increase the mobility viscosity of ZrO grain and grain boundary, and drag ZrO grain and liquid grain boundary during the sintering, then the grain growth is inhibited and the microstructure becomes more uniform.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.29-29
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• 1999

The synthesis of layered structures on the nanometer scale has become essential for continued improvements in the operation of various electronic and magnetic devices. Abrupt metal-metal interfaces are desired for applications ranging from metallization in semiconductor devices to fabrication of magnetoresistive tunnel junctions for read heads on magnetic disk drives. In particular, characterizing the interface structure between various transition metals (TM) and aluminum is desirable. We have used the techniques of MeV ion backscattering and channeling (HEIS), x-ray photoemission (ZPS), x-ray photoelectron diffraction(XPD), low-energy ion scattering (LEIS), and low-energy electron diffraction(LEED), together with computer simulations using embedded atom potentials, to study solid-solid interface structure for thin films of Ni, Fe, Co, Pd, Ti, and Ag on Al(001), Al(110) and Al(111) surfaces. Considerations of lattice matching, surface energies, or compound formation energies alone do not adequately predict our result, We find that those metals with metallic radii smaller than Al(e.g. Ni, Fe, Co, Pd) tend to form alloys at the TM-Al interface, while those atoms with larger atomic radii(e.g. Ti, Ag) form epitaxial overlayers. Thus we are led to consider models in which the strain energy associated with alloy formation becomes a kinetic barrier to alloying. Furthermore, we observe the formation of metastable fcc Ti up to a critical thickness of 5 monolayers on Al(001) and Al(110). For Ag films we observe arbitrarily thick epitaxial growth exceeding 30 monolayers with some Al alloying at the interface, possible driven by interface strain relief. Typical examples of these interface structures will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.386-391
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• 2003

Sing1e crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}\;s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.86\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155K)$. After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also, we confirmed that Al in $CuAlSe_2/GaAs$ did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.871-880
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• 2003

Single crystal CuAlSe$_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe$_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe$_2$ thin films measured with Hall effect by van der Pauw method are 9.24${\times}$10$\^$16/ cm$\^$-3/ and 295 cm$^2$/V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10$\^$-4/ eV/K)T$^2$/(T + 155K). After the as-grown single crystal CuAlSe$_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe$_2$ thin films has been investigated by PL at 10 K. The native defects of V$\_$cd/, V$\_$se/, Cd$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe$_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe$_2$/GaAs did not form the native defects because Al in single crystal CuAlSe$_2$ thin films existed in the form of stable bonds.

• Advances in materials Research
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• v.1 no.1
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• pp.51-74
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• 2012

A powder metallurgy-based rapid consolidation technique, Plasma Pressure Compaction ($P^2C^{(R)}$), was utilized to produce near-net shape parts of gamma titanium aluminides (${\gamma}$-TiAl). Micron-sized ${\gamma}$-TiAl powders, composed of Ti-50%Al and Ti-48%Al-2%Cr-2%Nb (at%), were rapidly consolidated to form near-net shape ${\gamma}$-TiAl parts in the form of 1.0" (25.4 mm) diameter discs, as well as $3"{\times}2.25"$ ($76.2mm{\times}57.2mm$) tiles, having a thickness of 0.25" (6.35 mm). The ${\gamma}$-TiAl parts were consolidated to near theoretical density. The microstructural morphology of the consolidated parts was found to vary with consolidation conditions. Mechanical properties exhibited a strong dependence on microstructural morphology and grain size. Because of the rapid consolidation process used here, grain growth during consolidation was minimal, which in turn led to enhanced mechanical properties. Consolidated ${\gamma}$-TiAl samples corresponding to Ti-48%Al-2%Cr-2%Nb composition with a duplex microstructure (with an average grain size of $5{\mu}m$) exhibited superior mechanical properties. Flexural strength, ductility, elastic modulus and fracture toughness for these samples were as high as 1238 MPa, 2.3%, 154.58 GPa and 17.95 MPa $m^{1/2}$, respectively. The high temperature mechanical properties of the consolidated ${\gamma}$-TiAl samples were characterized in air and vacuum and were found to retain flexural strength and elastic modulus for temperatures up to $700^{\circ}C$. At high temperatures, the flexural strength of ${\gamma}$-TiAl samples with Ti-50%Al composition deteriorated in air by 10% as compared to that in vacuum. ${\gamma}$-TiAl samples with Ti-48%Al-2%Nb-2%Cr composition exhibited better if not equal flexural strength in air than in vacuum at high temperatures.

• Journal of Environmental Science International
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• v.22 no.12
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• pp.1651-1660
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• 2013

The adsorption of lithium ion onto zeolite was investigated depending on contact time, initial concentration, cation forms, pH, and adsorption isotherms by employing batch adsorption experiment. The zeolite was converted into different forms such $K^+$, $Na^+$, $Mg^{2+}$, $Ca^{2+}$, and $Al^{3+}$. The zeolite had the higher adsorption capacity of lithium ion in $K^+$ form followed by $Na^+$, $Ca^{2+}$, $Mg^{2+}$, and $Al^{3+}$ forms, which was in accordance with their elctronegativities. The lithium ion adsorption was explained using the Langmuir, Freundlich, and Dubinin-Radushkevich adsorption isotherms and kinetic models. Adsorption rate of lithium ion by zeolite modified in $K^+$ form was controlled by pseudo-second-order and particle diffusion kinetic models. The maximum adsorption capacity obtained from Langmuir isotherm was 17.0 mg/g for zeolite modified in $K^+$ form. The solution pH influenced significantly the lithium ions adsorption capacity and best results were obtained at pH 5-10.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.726-731
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• 2002

Reaction synthesis is a process to form ceramics, intermetallics and their composites from elemental powder mixture. Application of this process to a surface modification techniques has a possibilities to enable the process at a lower temperature or for a shorter time, although synthesized materials are likely to include voids and unreacted elements. This paper intend to examine the effect of Si addition to the mixture of Al and Ni on the densification of synthesized Ni-Al intermetallic compounds and to evaluate the surface properties of obtained coatings. By the Si addition, exothermic reaction temperature to form Ni-Al intermetallic was lowered to be below the melting point of Al. Si soluted $Al_3$Ni$_2$, $Al_3$Ni and $Al_{6}$Ni$_3$Si were mainly formed in the coating layer when powder mixture was heated to 973K for 300s. Besides, densification was enhanced by increasing hot press pressure, Si additions and heating rate. When the composition of eutectic Al-Si reaches 78%, void ratio of sintered compact reduced to 0.4%. It is caused by higher flowability of Al-Si liquid phase generated and its infiltration into the void. Since the hardness of NiAl(Si) compound (about 600HV) formed in the coating layer is higher than that of Ni-Al compound (about 400HV), coating layer with high density and superior wear property is obtained by hot press using reaction synthesis from Al-Ni-Si powder mixture.