• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.50-58
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• 2002

The growth of GaN films on Si substrate has many advantages in that Si is less expensive than sapphire substrate and that integration of GaN-based devices with Si substrate is easier The difference of lattice constant and thermal expansion coefficient between GaN and Si is larger than those between GaN and sapphire. However, which results in many defects into the grown GaN. In order to obtain high duality GaN films on Si substrate, we need to reduce defects using the buffer layer such as AlN. In this study, we prepared three types of AlN buffer layer with various crystallinity on Si (111) substrate using MOCVD, Sputtering and MOMBE methods. GaN was grown by MOCVD on three types of AlN/Si substrate. Using TEM and XRD, we carried out comparative investigation of growth and properties of GaN deposited on the various AlN buffers by characterizing lattice coherency, crystallinity, growth orientation and defects formed (voids, stacking faults, dislocations, etc). It is found that the crystallinity of AlN buffer layer has strong effects on growth of GaN. The AlN buffer layers grown by MOCVD and MOMBE showed the reduction of out-of-plane misorientation of GaN at the initial growth stage.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.22-26
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• 2001

Microstructures of AlN thin films on Si substrates grown by plasma assisted molecular beam epitaxy were analyzed with various growth temperatures and substrate orientations. Reflection high energy electron diffraction (RHEED) patterns were checked for the in-situ monitoring of the growth condition. X-ray diffraction(XRD), double crystal X-ray diffraction (DCXD), and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films after growth. On Si(100) sub-strates, AlN thin films were grown mostly along the hexagonal c-axis orientation at temperature higher than $850^{\circ}C$. On the other hand the AlN films on Si(111) were epitaxially grown with directional coherencies in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112). The microstructure of AlN thin films on Si(111) substrates, with a full width at half maximum of almost 3000 arcsec at 2$\theta$=$36.2^{\circ}$, showed that the single crystal films were grown, even if they includ a lot of crystal defects such as dislocations and stacking faults.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.272-277
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• 1995

We report the properties of optically pumped stimulated emission at room temperature (RT) from column-III nitride semiconductors of GaN, AlGaN/GaN double heterostructure (DH) and AlGaN/GaInN DH which prepared on a sapphire substrate using an AIN buffer-layer by the nietalorganic vapor phase epitaxy (MOVPE) method. The peak wavelength of the stimulated emission at RT from AIGaN/GaN DH is 369nm and the threshold of excitation pumping power density (P$\_$th/) is about 84kW/cm$\^$2/, and they from AlGaN/GaInN DH are 402nm and 130kW/cm$\^$2/ at the pumping power density of 200kW/cm$\^$2/, respectively. The P$\_$th/ of AIGaN/GaN and AlGaN/GaInN DHs are lower than the single layers of GaN and GaInN due to optical confinement within the active layers of GaN and GaInN, respectively.

• Journal of the Korean institute of surface engineering
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• v.35 no.4
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• pp.199-205
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• 2002

TiN and TiAlN films were deposited on SKD 11 steel substrates by an arc ion plating (AIP) technique. The crystallinity and morphology for the deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The mechanical properties of both films were investigated through the indentation, impact, and wear test. Those films fairly adherent to SKD 11 steel substrate, showed hardness values of 2300 $\pm$ 100kg/$\textrm{mm}^2$ and 3200 $\pm$ 100kg/$\textrm{mm}^2$ with a load of 25g, respectively. During impact test, TiAlN films showed much superior impact wear resistance to TiN films. It could be suggested that the TiN films was failed relatively by plastic deformation with oxidation during impact test, while TiAlN films was failed by brittle fracture and resisted the oxidation by the impact energy. The friction coefficient of TiAlN films became lower than that of TiN films at high sliding speed condition although it was higher than that of TiN films at low speed. Therefore, TiAlN films was suggested to be more advantageous than TiN films for high speed machining fields.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.371-378
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• 1996

An RF inductively coupled plasma (ICP) torch has been developed as a typical thermal plasma generator and reactor. It has been applied to various materials processings such as plasma flash evaporation, thermal plasma CVD, plasma spraying, and plasma waste disposal. The RF ICP reactor has been generally operated under one atmospheric pressure. Lately the characteristics of low pressure RF ICP is attracting a great deal of attention in the field of plasma application. In our researches of RF plasma applications, low pressure RF ICP is mainly used. In many cases, the plasma generated by the ICP torch under low pressure seems to be rather capacitive, but high density ICP can be easily generated by our RF plasma torch with 3 turns coil and a suitable maching circuiit, using 13.56 MHz RF generator. Plasma surface modification (surface hardening by plasma nitriding and plasma carbo-nitriding), plasma synthesis of AIN, and plasma CVD of BN, B-C-N compound and diamond were practiced by using low pressure RF plasma, and the effects of negative and positive bias voltage impression to the substrate on surface modification and CVD were investigated in details. Only a part of the interesting results obtained is reported in this paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.413-416
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• 2004

In this study, zinc oxide(ZnO) having large misfit(18.2%) with sapphire was tried to be grown on very thin nitride buffer layers. For the creation of various kinds of nitride buffer layer, sapphire surface was modified by an irradiation of nitrogen ion beam with low energy generated from stationary plasma thruster(SPT) at room temperature. After the irradiation of ion beam, Al-N and Al-O-N bonding was identified to be formed as nitride buffet layers. Surface morphology was measured by AFM and then ZnO growth was followed by pulsed laser deposition(PLD). Their properties are analyzed by XRD, AFM, TEM, and PL. We observed that surface morphology was improved and deep level emission related to defects was almost vanished in PL spectra from the ZnO grown on nitride buffer layer.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.9
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• pp.834-843
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• 2016

In this paper, the design of a PIN diode S-band transfer-type SP4T including its driver circuit is presented. Each path of the SP4T is composed of the cascade connection of series-shunt PIN diodes to improve the isolation performance. The SP4T is implemented using chip type PIN diodes and a 20 mil AIN substrate fabricated using thin film technology. The driver circuit for the SP4T is designed using a multiplexer and four NMOS-PMOS push-pull pair. From on-wafer measurement, the fabriacted SP4T shows a maximum insertion loss of 1.1 dB and a minimum isolation of 41 dB. The time performance of the driver circuit is evaluated using the packaged PIN diodes with the identical PIN diode chip, and the transition time for on-off and off-on are below 100 nsec. For an input power level of 150 W, the measured insertion loss and isolation are close to those of the on-wafer measurement taking into consideration of the coaxial package mismatch and insertion loss.

• Journal of Welding and Joining
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• v.13 no.3
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• pp.134-146
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• 1995

Aluminium nitride(AlN) is currently under investigation as potential candidate for replacing alumium oxide(Al$_{2}$ $O_{3}$) as a substrate material for for electronic circuit packaging. Brazing of aluminium nitride(AlN) to Cu with Ag base active alloy containing Ti has been investigated in vacuum. Binary Ag$_{98}$ $Ti_{2}$(AT) and ternary At-1wt.%Al(ATA), AT-1wt.%Ni(ATN), AT-1wt.% Mn(ATM) alloys showed good wettability to AlN and led to the development of strong bond between brate alloy and AlN ceramic. The reaction between AlN and the melted brazing alloys resulted in the formation of continuous TiN layers at the AlN side iterface. This reaction layer was found to increase by increase by increasing brazing time and temperature for all filler metals. The bond strength, measured by 4-point bend test, was increased with bonding temperature and showed maximum value and then decreased with temperature. It might be concluded that optimum thickness of the reaction layer was existed for maximum bond strength. The joint brazed at 900.deg.C for 1800sec using binary AT alloy fractured at the maximum load of 35kgf which is the highest value measured in this work. The failure of this joint was initiated at the interface between AlN and TiN layer and then proceeded alternately through the interior of the reaction layer and AlN ceramic itself.

• Journal of Nutrition and Health
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• v.35 no.10
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• pp.1031-1037
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• 2002

The purpose of present study was to evaluate the effect of endurance exercise training on skeletal muscle free amino acid concentrations, and differences in free amino acid concentration between soleus muscle which consists of mostly slow twitch oxidative fiber and extensor digitorum longus muscle which consists of fast twitch oxidative glycolytic fiber. Sixteen male SD rats (4 weeks old) were randomly devided into two groups, and fed a purified AIN-93M diet with or without aerobic exercise training according to the protocol (running on the treadmill at 25 m/min for 60 min, 5 days a week) for 6 weeks. Exercise-training for 6 weeks significanly reduced the commulative body weight gain (p＜0.05) and food efficiency ratio (p＜0.01) of rats. The result showing mitochondrial citrate synthase activity of soleus muscle was significantly higher in exercise-trained rats compared to the value for control animals (p＜0.01) indicates aerobic exercise-training was successfully accomplished in the trained group. No difference was found in the muscle aminogram pattern between soleus muscle and extensor digitorum longus muscle of control animals. However, free amino acid concentrations of soleus muscle were from 1.2 to 3.9 times of those found in extensor digitorum longus muscle of control rats, depending on an individual amino acid. Intermediate level of endurance exercise training for 6 weeks did not influence concentrations of most of free amino acid in soleus muscle of rats collected at an overnight fasted and rested state. In contrast, isolucine and leucine concentrations in extensor digitorum longus muscle of exercise-trained rats were significantly lower than those for control animals. These results indicate that aerobic energy metabolism had not been efficiently conducted, and thereby the utilization of BCAA for energy substrate was enhanced in fast twitch oxidative glycolytic fibers of extensor digitorum longus muscle of rats followed exercise-training protocol for 6 weeks.