Growth and effect of thermal annealing of impurity for $AgGaSe_2$ single crystal thin film by hot wall epitaxy
(Hot Wall Epitaxy (HWE)법에 의한 $AgGaSe_2$ 단결정 박막 성장과 불순물 열처리 효과)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2007.11a
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- pp.79-80
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- 2007