• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.165-166
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• 2008

We investigate characteristics of J-aggregation as take advantage of LB technic. In order to confirm the applications possible for the molecular electronic device, the morphological properties of merocyanine dye were investigated by AFM. ${\pi}-A$ curves investigated the surface pressure of the LB film from a liquid to a solid state ranged between 90 and 100 mN/m. We observed aggregation and it's characteristics by using visible reflection spectroscopy. We have observed morphology of merocyanine dye on gold surface by STM. focuses on results obtained in mercocyanide dye of J-aggregation. When LB films of merocyanine dye are mixed with arachidic acid, J-aggregate formation is exhibited. J-aggregate formation has been serving as typical systems in revealing the physical and structural aspects of nano-sized molecular aggregates constructed as muiltilayers.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.9
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• pp.423-428
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• 2006

We have been carried out the two-beam interference method to form the diffraction grating on chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ thin films for Holography Data Storage (HDS). In the present work, we have been formed holographic diffraction gratings using He-Ne laser (632.8nm) under different Polarization state combinations (intensity polarization holography, phase polarization holography). It was obtained the diffraction grating efficiency by 11st order intensity and investigated the formed grating structure using Atomic Force Microscopy (AFM). As the results, it is shown that the diffraction efficiency of (P: P) polarized recording was maximum 2.4% and we found that its value was rather higher than that of other-polarized recordings. From the results, it is confirmed that the efficient holographic grating formation on amorphous chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ films depend on both the spatial variation of intensity and the polarization state of the incident field pattern.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.346-349
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• 2002

High Power and high dose ion implantation is essentially needed to make power MOSFET devices based on SiC wafers, because the diffusivities of the impurities such as Al, N, p, B in SiC crystal are very low. In addition, it is needed high temperature annealing for electrical activation of the implanted species. Due to the very high annealing temperature, the surface morphology after electrical activation annealing becomes very rough. We have found the different surface morphologies between implanted and unimplanted region. The unimplanted region showed smoother surface morphology It implies that the damage induced by high energy ion implantation affects the roughening mechanism. Some parts of Si-C bonding are broken in the damaged layer, s\ulcorner the surface migration and sublimation become easy. Therefore the macrostep formation will be promoted. N-type 4H-SiC wafers, which were Al ion implanted at acceleration energy ranged from 30kev to 360kev, were activated at 1600$^{\circ}C$ for 30min. The pre-activation annealing for damage relaxation was performed at 1100-1500$^{\circ}C$ for 30min. The surface morphologies of pre-activation annealed and activation annealed were characterized by atomic force microscopy(AFM).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.7
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• pp.354-358
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• 2006

In this paper, we investigated the selective etching rate of amorphous As-Ge-Se-S thin film due to the photoexpansion effect and fabricated the 2-dimensional embossing type diffraction grating hologram. We measured the thickness change with the etching time among NaOH solution after forming 1-dimension diffraction grating. As a results, we found that the selective etching rate were $2.5\AA/s,\;3.3\AA/s,\;3.9\AA/s$ where NaOH solution concentration were 0.26N, 0.33N, 0.36N, respectively. Also after the formation of 2-dimensional diffraction grating by the $90^{\circ}$ degree of circulation on the formed 1-dimensional diffraction grating, we etched selectively during 60sec, among 0.26N NaOH solution and obtained 2-dimensional embossing diffraction grating. As the results of AFM (Atomic Force Microscopy), we confirmed the formation of distinct embossing type 2-dimensional diffraction grating hologram, successfully.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.126-134
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• 1996

Tungsten silicide films were deposited on the phosphorus-doped poly-Si/SiO$_{2}$/Si-substrates by LPCVD (low pressue chemical vapor deposition). The formation and various properties of tungsten silicide processed by furnace annealing in N$_{2}$ ambient were evaluated by using XRD. AFM, 4-point probe and SEM. And the redistribution of phosphorus atoms has been observed by SIMS. The crystal structure of the as-deposited tungsten silicide films were transformed from the hexagonal to the tetragonal structure upon annealing at 550.deg. C. The surface roughness of tungsten polycide films were found to very smoothly upon annelaing at 850.deg. C and low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide films are measured to be 2.4 .ohm./ㅁafter furnace annealing at 1100.deg. C, 30min. It was found that the sheet resistance of tungsten polycide films upon annealing above 1050.deg. C were independant on the phosphorus concentration of polysilicon layer and furnace annealing times. An out-diffusion of phosphorus impurity through tungsten silicide film after annealing in $O_{2}$ ambient revealed a remarkably low content of dopant by oxide capping.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.143-143
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• 2008

Nanowires are promising options for building nanoscale electronic structures coming from high conductivity of nanowires. In particular, Deoxyribonucleic acid (DNA), which is structurally nanowire, can obtain highly ordered electronic components for nanocircuitry and/or nanodevices because of its very flexible length controllability, nanometer-size diameter, about 2 nm, and self-assembling properties. In this work, we used the method to form DNA-Nanowires (NWs) by using chemical treatment on Silicon (Si) surface, and Aminopropyl-triethoxysilane (APTES) was used as inducer of DNA sequence to modify the characteristics of Si surface. Moreover, we performed tilting technique to align DNA by the direction of flow of DNA solution. We investigated the assembly process between DNA molecules and APTES - coated Si surface according to the APTES concentration, from $1.2{\mu}\ell$ to $120{\mu}\ell$. Atomic Force Microscopy (AFM) images showed the combination rate of DNA molecules by the change of APTES concentration. As APTES concentration becomes thicker, aggregation of DNA molecules occurs, and this makes a kind of DNA networks. In this respect, we confirmed that there's a positive relationship between the concentration of APTES and the formation rate of DNA nanowires. Since there have been lots of research preceded to utilize DNA nanowires as template, so by using this positive relationship with proper alignment technique, realization of nano electronic devices with DNA nanowires might be feasible.

• Korean Journal of Materials Research
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• v.12 no.7
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• pp.533-539
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• 2002

Porous anodic aluminum oxide layer for nano templates was prepared in acidic solutions. In order to investigate effects of 2nd anodization on ordered formation behaviors of the porous oxide layers, electrochemical and microstructural studies were performed, primarily using TEM, FE- SEM, AFM, and Ultramicrotomy. The pore diameter of the anodic oxide layer increased approximately linearly with increasing voltages, and to the contrary, the pore density decreased. It was shown that 2nd anodizing on the cell base after dissolving 1st anodic oxide layer was remarkably effective for forming ordered array of the pores, comparing with the case for 1st anodization only. And for controlling the diameter of pores, widening method by chemical dissolution seemed more practical than by electrochemical methods.

• Bulletin of the Korean Chemical Society
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• v.21 no.6
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• pp.623-627
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• 2000

Aggregation of hydrophobically end-capped poly(ethylene oxide)s: HEURs, denoted as $C_8$$EO_{380}$$C_8$, $C_12$$CO_{600}$$C_{12}$, and $C_{18}$$EO_{860}$$C_{18}$,are described using static fluorescence, dynamic light scattering, and atomic force microscope (AFM) techniques. The CAC (critical aggregation concentration) was determined by com-paring two fluorescent peaks which were influenced by the polarity of the probe dye molecules, pyrene. The aggregation occurs in concentrations higher than 10 g/L of $C_8$$EO_{380}$$C_8$ and the CAC decreases by increasing the side chain length. The dynamic light scattering experiment shows fast mode and slow mode decays, and both are diffusive. The fast mode does not depend on the concentration, but the slow mode shows concentration dependence influenced by the formation of an aggregated structure. The hydrophobic end groups effect more dominantly than the main chains for the formation of HEUR micelles. By increasing the concentration, the HEUR micelles change their structure from spheres to rodlike micelles, and finally make fused structures, which were visualized with atomic force microscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.237-237
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• 2009

Zinc oxide (ZnO) thin film was deposited on Si substrates using polycrystalline (poly) 3C-SiC buffer layer, in which the ZnO film was grown by sol-gel method. Physical characteristics of the grown ZnO film was investigated experimentally by means of SEM, XRD, FT-IR (Furier Transform-Infrared spectrum), and AFM. XRD pattern was proved that the grown ZnO film on 3C-SiC layers had highly (002) orientation with low FWHM (Full width of half maxium). These results showed that ZnO thin film grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• Transactions of the Korean hydrogen and new energy society
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• v.25 no.3
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• pp.305-310
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• 2014

This study examined the morphological changes in lithium surface immersed in 1mol $dm^{-3}$ (M) $LiPF_6 $ dissolved in propylene carbonate (PC) containing different 1,2-dimethoxyethane (DME) concentrations as a co-solvent. A passivation film was formed on the surface of lithium metal by electrolyte decomposition. The passivation film formation reactions were significantly affected by the amount of co-solvent, DME, in electrolyte solution. A stable film was obtained from the 1 M $LiPF_6 $ / PC:DME (67:33) solution in which lithium electrode showed good electrochemical performances. Atomic force microscope (AFM) and electrochemical impedance spectroscopy (EIS) results revealed that there were no direct correlations between changes in the surface morphology of lithium metal and the resistance behavior of its passivation film.