• Title/Summary/Keyword: AFM tip

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Nano Visual Servoing Loop Using SEM Image (전자현미경 영상을 이용한 나노 비주얼 서보잉)

  • Choi, Jin-Ho;Ahn, Sang-Jung;Park, Byong-Chon;Lyou, Joon
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.10
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    • pp.1876-1882
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    • 2008
  • Nano manipulator is used to manufacture Carbon NanoTube(CNT) tips. Using nano manipulator, operator attaches a CNT at the apex of Atomic Force Microscope(AFM) tip, which requires a mastery of mechanics and long manufacture time. Nano manipulator is installed inside a Scanning Electron Microscope(SEM) chamber to observe the operation. This paper presents a control scheme for horizontal axes of nano manipulator via processing SEM image. Edges of AFM tip and CNT are first detected, and the position information so obtained is fed to control horizontal axes of nano manipulator. That is, a visual servoing loop is realized to control the axes more precisely in nano scale.

A Study on Determination of the Area Function of Nano Indenter Tip with AFM (AFM을 이용한 나노 인덴터 팁의 면적함수 결정에 관한 연구)

  • 박성조;이현우;한승우
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.6
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    • pp.145-152
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    • 2004
  • Depth-sensing indentation is wifely used for evaluation of mechanical properties of thin films. It is generally accepted that the most significant source of uncertainty in nanoindentation measurement is the geometry of the indenter tip. Therefore the successful application of the technique requires accurate calibration of the indenter tip geometry. The direct measurement of geometry of a Berkovich indenter was determined using a atomic force microscope. The indentation geometrical calibration of contact area was performed by analyzing the indenter tip profile. The equations of area functions were proposed for nanoscale thin films..

Nonlinear Dynamics of AFM Tip with Different Contact Models (접촉모델에 따른 AFM 팀의 배선형 동역학 비교)

  • 홍상혁;이수일;이장무
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2004.05a
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    • pp.73-76
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    • 2004
  • Tapping mode atomic force microscopy (TM-AFM) utilizes the dynamic response of a resonating probe tip as it approaches and retracts from a sample to measure the topography and material properties of a nanostructure. We present recent results based on numerical techniques that yield new perspectives and insight into AFM. It is compared that the dynamic models including van der Waals and Derjaguin-Muller-Toporov(DMT) or Johnson-Kendall-Roberts(JKR) contact forces demonstrates that periodic solutions can be represented with respect to the approach distance and excitation frequency.

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Nano-scale adhesion and friction on Si wafer with the tip size using AFM

  • R. Arvind Singh;Yoon, Eui-Sung;Oh, Hyun-Jin;Kong, Ho-Sung
    • KSTLE International Journal
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    • v.5 no.1
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    • pp.1-6
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    • 2004
  • Nano-scale studies on adhesion and friction were conducted in Si-wafer (100) using Atomic Force Microscopy (AFM). Glass (Borosilicate) balls of radii 0.32$\mu\textrm{m}$, 1.25$\mu\textrm{m}$, and 2.5$\mu\textrm{m}$, mounted on cantilever (Contact Mode type NPS) were used as tips. Adhesion and friction between Si-wafer and glass tips were measured at ambient temperature (24${\pm}$1$^{\circ}C$) and humidity (45${\pm}$5%). Friction was measured as a function of applied normal load in the range of 0-160 nN. Results showed that, both adhesion and friction increased with the tip radii. Also, friction increased linearly as a function of applied normal load. The effect of tip size on adhesion and friction was explained as the influence of the capillary force exerted by meniscus and that of the contact area on these parameters respectively. The coefficient of friction was estimated in two different ways, as the slope from the plot of friction force against the applied normal load and as the ratio between the friction force and the applied normal load. Both these estimates showed that the coefficient of friction increased with the tip size. Further, the influence of the adhesion force on the coefficient of friction was also discussed.

Errors of Surface Image Due to the Different Tip of Nano-Indenter (나노인덴터 압입팁의 특성에 따른 표면 이미지 오차 연구)

  • Kim, Soo-In;Lee, Chan-Mi;Lee, Chang-Woo
    • Journal of the Korean Vacuum Society
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    • v.18 no.5
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    • pp.346-351
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    • 2009
  • Due to the decrease of line width and increase of the integration level of the device, it is expected that 'Bottom-up' method will replace currently used 'Top-down' method. Researches about 'Bottom-up' device production such as Nanowires and Nanobelts are widely held on. To utilize these technologies in devices, properties of matter should be exactly measured. Nano-indenters are used to measure the properties of nano-scale structures. Additionally, Nano-indenters provide AFM(Atomic Force Microscopy) function to get the image of the surface and get physical properties for exact position of nano-structure using this image. However, nano-indenter tips have relatively much bigger size than ordinary AFM probes, there occurs considerable error in surface image by Nano-Indenter. Accordingly, this research used 50nm Berkovich tip and 1um $90^{\circ}$ Conical tip, which are commonly used in Nano-Indenter. To find out the surface characteristics for each kind of tip, we indented the surface of thin layer by each tip and compared surface image and indentation depth. Then, we got image of 100nm-size structure by surface scanning using Nano-Indenter and compared it with surface image gained by current AFM technology. We calculated the errors between two images and compared it with theoretical error.

Anodization Process of the YBa2Cu3O7-x Strip Lines by the Conductive Atomic Force Microscope Tip (전도성 AFM 탐침에 의한 YBa2Cu3O7-x 스트립 라인의 산화피막 형성)

  • 고석철;강형곤;임성훈;한병성;이해성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.8
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    • pp.875-881
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    • 2004
  • Fundamental results obtained from an atomic force microscope (AFM) chemically-induced direct nano-lithography process are presented, which is regarded as a simple method for fabrication nm-scale devices such as superconducting flux flow transistors (SFFTs) and single electron tunneling transistors (SETs). Si cantilevers with Pt coating and with 30 nm thick TiO coating were used as conducting AFM tips in this study. We observed the surfaces of superconducting strip lines modified by AFM anodization' process. First, superconducting strip lines with scan size 2 ${\mu}{\textrm}{m}$${\times}$2 ${\mu}{\textrm}{m}$ have been anodized by AFM technology. The surface roughness was increased with the number of AFM scanning, The roughness variation was higher in case of the AFM tip with a positive voltage than with a negative voltage in respect of the strip surface. Second, we have patterned nm-scale oxide lines on ${YBa}-2{Cu}_3{O}_{7-x}$ superconducting microstrip surfaces by AFM conductive cantilever with a negative bias voltage. The ${YBa}-2{Cu}_3{O}_{7-x}$ oxide lines could be patterned by anodization technique. This research showed that the critical characteristics of superconducting thin films were be controlled by AFM anodization process technique. The AFM technique was expected to be used as a promising anodization technique for fabrication of an SFFT with nano-channel.

AFM fabrication of oxide patterns on 4H-SiC surface (4H-SiC 표면에서 AFM의 산화 패턴 제작)

  • Jo, Yeong-Deuk;Bahng, Wook;Kim, Sang-Cheol;Kim, Nam-Kyun;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.64-64
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    • 2009
  • Atomic force microscopy (AFM) fabrication of oxide patterns is an attractive technique for nanoscale patterns and related device structures, SiC exhibits good performance in high-power, high-frequency, and high-temperature conditions that is comparable to the performance of Si. The AFM fabrication of oxide patterns on SiC is important for electronic applications. However, there has not been much reported investigations on oxidation of SiC using AFM. We achieved the local oxidation of 4H-SiC using the high loading force of ~100 nN, although the oxidation of SiC is generally difficult mainly due to the physical hardness and chemical inactivity. All the experiments were performed using atomic force microscopy (S.I.S. GmbH, Germany) with a Pt/Ir-coated Si tip at ~40% humidity and room temperature. The spring constant and resonance frequency of the tip were around ~3 N/m and ~70 kHz. We fabricated oxide patterns on n-type 4H-SiC ($\sim10^{19}/cm^3$) and n-type Si ($\sim1.9\times10^{16}/cm^3$). In summary, we demonstrated that the oxide patterns can be obtained over the electric field of ${\sim}\times10^7 V/cm$ and the high loading force using the tip as a cathode. The electric field transports the oxyanions (OH-) to the positively biased surface.

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Nanoscale Nonlinear Dynamics of Carbon Nanotube Probe Tips (탄소나노튜브 탐침의 나노 비선형 동역학)

  • 이수일
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2004.05a
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    • pp.83-86
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    • 2004
  • Carbon nanotube (CNT) tips in tapping mode atomic force microscopy (AFM) enable very high-resolution imaging, measurements, and manipulation at the nanoscale. We present recent results based on experimental analysis that yield new insights into the dynamics of CNT probe tips in tapping mode AFM. Experimental measurements are presented of the frequency response and dynamic amplitude-distance data of a high-aspect-ratio multi-walled (MW) CNT tip to demonstrate the non-linear features including tip amplitude saturation preceding the dynamic buckling of the MWCNT. Surface scanning is performed using a MWCNT tip on a SiO$_2$ grating to verify the imaging instabilities associated with MWCNT buckling when used with normal control schemes in the tapping mode. Lastly, the choice of optimal setpoints for tapping mode control using CNT probe tip are discussed using the experimental results.

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Nanotribological Behavior of Cu Oxide and Silicon Tip (Cu Oxide와 Silicon Tip 사이의 나노트라이볼러지 작용)

  • Kim, Tae-Gon;Kim, In-Kwon;Park, Jin-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.364-365
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    • 2005
  • This paper report nanotribological behavior between Si tip and Cu wafer surfaces which was treated various concentration of $H_2O_2$. This experimental approach has proven atomic level insight into Cu CMP. It has been used to study interfacial friction and adhesion force between Si tip and Cu wafer surfaces in air by atomic force microscopy (AFM). Adhesion force of Cu surfaces which was pre-cleaned in diluted HF solution was lager than Cu oxide surfaces. Adhesion force of Cu oxide surface was saturated around 7 nN. Slope of normal force vs lateral signal was increased as increasing concentration of $H_2O_2$ and it was saturated around 24. Friction force of Cu oxide was lager than Cu.

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Molecular Dynamics Simulation of Contact Process in AFM/FFM Surface Observation

  • Shimizu, J.;Zhou, L.;Eda, H.
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2002.10b
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    • pp.61-62
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    • 2002
  • In order to clarify the contact mechanism between specimen surface and probe tip in the surface observation by the AFM (atomic force microscope) or the FFM (friction force microscope), several molecular dynamics simulations have been performed. In the simulation, a 3-dimensional simulation model is proposed where the specimen and the probe are assumed to consist of mono-crystal line copper and a carbon atom respectively and the effect of cantilever stiffness is also taken into considered. The surface observation process on a well-defined Cu{100} is simulated. The influences of cantilever stiffness on the reactive force images and the behavior of probe tip were evaluated. As a resuIt, several phenomena similar to those observed by the actual surface observation experiment, such as double-slip behavior and dispersion in the stick-slip wave period were observed.

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