• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.581-584
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• 1998

TiN thin films were grown on (100) Si substrate by atomic layer epitaxy at 130 - $240^{\circ}C$ using TEMAT and NH3 as precursors. Reactants were injected into the reactor in sequence of TEMAT precursor vapor pulse, N2 purging gas pulse, NH3 gas pulse and N2 purging gas pulse so that gas-phase reactions could be removed. The films were characterized by means of x-ray diffraction(XRD), 4-point probe, atomic force microscopy(AFM) and auger electron spectroscopy(AES).

• 대한전자공학회논문지
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• 제26권6호
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• pp.63-70
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• 1989

액체금속이온원으로 부터 발생한 AuGe 이온빔을 GaAs기판에 주입시킨 후 이 시료의 표면성분과 구조를 AES(Auger electron spectroscopy), RHEED(reflection high energy electron diffraction), SEM(scanning electron microscopy) and EPMA(electron probe microanalysis)등으로 조사하였으며 AES depth profile 실험결과를 이체충돌에 의한 Monte Carlo simulation과 비교하였다. AuGe 이온이 주입된 시료를 AES, EPMA로 측정한 결과 As의 preferential스피터링이 나타났으며 300$^{circ}$C로 열처리하면 Ga과 outdiffusion되었다. 또한 측정한 Au와 Ge의 depth profile은 이체충돌에 의한 Monte Carlo simulation의 결과와 잘 일치하였다.

• 한국산업정보학회:학술대회논문집
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• 한국산업정보학회 2001년도 춘계학술대회논문집:21세기 신지식정보의 창출
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• pp.224-231
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• 2001

2.45 GHz 마이크로웨이브를 사용하는 전자회전공명 플라즈마를 이용하여 화학적 기상증착(electron cyclotron resonance plasma enhanced chemical vapor deposition; ECR-PECVD) 방법으로 ECR 마이크로웨이브 power, CH$_4$/H$_2$가스 혼합비와 유량, 증착시간, 그리고 기판 bias 전압 등을 변화시켜 가면서 수소가 함유된 비정질 탄소(a-C:H) 박막을 증착하였고, 증착시킨 박막의 특성을 AES(Auger electron spectroscopy), ERDA(elastic recoil detection analysis), FTIR(Fourier transform infrared) 및 Raman 측정 등으로 조사하였다. 증착시킨 a-C:H 박막은 탄소 및 수소원소들로만 구성되어 있음을 AES 측정으로 확인하였다. 그리고 FTIR 측정으로부터 a-C:H 박막은 대부분 sp$^3$결합을 하고 있고 일부는 sp$^2$결합을 하고 있음을 확인하였으며, CH$_4$/H$_2$가스 혼합비와 유량의 변화가 a-C:H 박막의 탄소와 수소의 결합구조에 큰 영향을 미치지 않았으며, 다만 증착시간이 증가할수록 탄소와 수소 원자들의 결합구조가 $CH_3$구조에서 CH$_2$나 CH 구조로 변하고 있음을 알았다. 또한 Raman 스펙트럼의 Gaussian curve fitting을 통하여 sp$^3$/sp$^2$의 결합수에 비례하는 D 및 G peak의 면적 강도비(I$_{D}$/l$_{G}$)는 기판 bias 전압을 증가시킬수록 증가하였으며, 경도도 역시 증가하였다.하였다.

• Bulletin of the Korean Chemical Society
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• 제28권10호
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• pp.1751-1755
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• 2007

The interaction of ammonium hydroxide (NH4OH) with zircaloy-4 (Zry-4) was investigated using X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) methods. In order to study the surface chemistry of NH4OH/Zry-4 system, the binding energies of N1s, O1s and Zr3d electrons were monitored. The N1s peak intensity was remarkably increased by following cycles of Ar+ sputtering of NH4OH dosed Zry-4 surface at room temperature. Because the nitrogen stayed under the subsurface region was diffused out onto the Zry-4 surface after oxygen concentration was decreased. These could be occurred after the surface oxygen was diffused into the bulk or desorbed out from the surface until Ar+ fluence was 6.0 × 1016 Ar+/cm2 then the surface was relatively atomic deficient state. The O1s peak intensity was decreased by stepwise Ar+ sputtering. After many cycles of Ar+ sputtering, the peak intensities of Zr3d peaks did not change much but the shape of the peak clearly did change. This implies that the oxidation state of zirconium was changed during stepwise Ar+ sputtering of NH4OH/Zry-4. The Zr3d peak intensity of zirconium nitride (ZrNx) increased as the intensity of N1s (from zirconium nitride) increased but the Zr3d peak intensity of zirconium oxide (ZrOx) decreased due to the depopulation of the oxygen species on the surface region. We also observed that the peak intensity of Zr4+ was nearly same after Ar+ sputtering processes but the peak intensity of metallic zirconium increased compared to that of before the sputtering process was performed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.267-267
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• 2009

Solar cells with CIGS absorber layers have proven their suitability for high efficiency and stable low cost solar cells. We prepared and characterized particle based CIGS thin film using a non-vacuum processing. CIGS powder were obtained at $240^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$, Se powder in solvent. The nanoparticle precursors were mixed with binder material. The CIGS thin film deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Visible-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.442-443
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• 2009

We prepared and characterized particle based CIGS thin film using a thermal evaporator. CIGS powder were obtained at $240^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$, Se powder in solvent. The CIGS thin film deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Vis-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM).

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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• pp.261-264
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• 1991

Titanium carbide(TiC) films were deposited on stainless-steel sheets using HCD(Hollow Cathode Discharge) reactive ion plating. Acetylene gas was used as the reactant gas. The characteristics of TiC films were examined by X-Ray diffraction, $\alpha$-step, ESCA(Electron Spectroscopy for Chemical Analysis), and, AES(Auger Electron Spectroscopy). The results were discussed with regard to various deposition conditions(bias voltage, acetylene flow rate, temperature).

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.160-162
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• 2009

We have prepared and characterized particle based CIGS thin films using a thermal evaporator. As the copper rate, selenium rate changed, CIGS particles were obtained at $240^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$ and Se powder in solvent. The CIGS thin films were deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Vis-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM).

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.835-844
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• 2001

In this paper, we report the successful growth of crystalline carbon nitride films in Si(100) by a laser-electric discharge method. The laser ablation of the target leads to vapor plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy(AES) were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films with a deposition time of 2 hours is studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1277-1279
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• 1997

In this study, the mechanism underlying the corrosion problem have been investigated using X-ray photoelectron spectroscopy(XPS) and scanning electron microscopy(SEM), AES(Auger electron spectroscopy) In regard to the removal of Al-Cu corrsion, the subsequent treatment of the $SF_6$ plasma has also been completed. This work evaluated the effects of grain boundary on the AlCu after dry etching and the role of subsequent $SF_6$ plasma for the removal of AlCu corrosion.