• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.1
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• pp.68-72
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• 2012

In this paper, highly linear power amplifier using bandpass filter based on metamaterial and Composite Right- / Left-Handed (CRLH) structure is proposed. The proposed bandpass filter consist of the series capacitor, series microstrip line and the parallel inductor, parallel microstrip line. The insertion loss is minimized at operation frequency and the $2^{nd}$ harmonic is suppressed by the bandpass filter using the CRLH structure. And we improved the Adjacent Channel Leakage Ratio (ACLR) using the characteristic of the proposed bandpass filter. At 2.14 GHz, we have obtained the output power of 38.83 dBm, the $2^{nd}$ harmonic of .61.33 dBc, the $3^{rd}$ IMD of .54.67 dBc, and ACLR of .51.33 dBc at 5 MHz offset, -56.50 dBc at 10 MHz offset, respectively.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.44 no.2 s.314
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• pp.32-38
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• 2007

This paper represents a Doherty amplifier (DPA) with analog predistorter (PD) to improve the linearity of the DPA while preserving the high efficiency. A third-order PD cancels fifth-order intermodulation (IM5) as well as third-order intermodulation (IM3) components by their same phase difference in the PD and DPA. This is accomplished by independently controlling their phase by using the phase-controlled error generator in the PD. Also, we confirm the phase-control ability of the error generator experimentally with a simple and accurate phase measurement setup. For experimental verification, a third-order PD has been implemented and tested in a 180-W DPA at the wide-band code division multiple access (WCDMA) band of 2.11-2.17 GHz. Two-tone test results show that significant cancellation of IM3 and IM5 components can be obtained. For four-carrier WCDMA applications, significant adjacent channel leakage ratio (ACLR) improvement is achieved over a wide range of output power levels. This technique is cost-effective and convenient due to its simple structure, compact size, and three control parameters.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.8
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• pp.740-747
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• 2015

Recently, mobile communication systems using the millimeter-wave frequency band have been proposed, and the importance of efficient compensation of the nonlinearity caused by 60 GHz high-power amplifiers(HPAs) is increasing. In this paper, we propose a predistorter structure based on multiple coefficient sets which are separately used to different ranges of input power values. These ranges correspond to varying levels of nonlinearity characteristics. The structure is applied to the 60 GHz HPA FMM5715X and the performance of correcting the nonlinearity of LTE signals is evaluated. Evaluation results using a hardware testbed demonstrate that the proposed predistorter structure achieves the maximum of 6 dB gain over the conventional method in terms of the adjacent channel leakage ratio(ACLR).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.4
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• pp.430-439
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• 2011

In this paper, we design a digital predistortion(DPD) for linearity enhancement of RF power amplifier operating in 900 MHz band. We verify improvement of linearity by comparing the proposed DPD using tanh as a nonlinear indexing function and the DPD using linear indexing function based on signal amplitude. The digital predistortion is realized by look-up table(LUT) method, and the Saleh model is employed for power amplifier modeling, then a commercial power amplifier module is used for measurement. The LUT has 256 tables, and the NLMS(Normalized Least Mean Square) algorithm was utilized for an adaptive algorithm for estimation. As a result, we improve the ACLR(Adjacent Channel Leakage Ratio) by around 15 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.4
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• pp.484-490
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• 2012

In this paper, we design a digitally pre-distorted RF power amplifier operating in 900 MHz band. The linearity of RF power amplifier is improved by employing the digital pre-distortion(DPD) based on affine projection(AP) algorithm, where the look-up table(LUT) method is used with non-linear indexing. The proposed DPD with AP algorithm is compared with that with normalized least mean square(NLMS) algorithm, applied to the RF power amplifier. A commercial power amplifier module is used for verification of the proposed algorithm which shows improvement of adjacent channel leakage ratio(ACLR) by about 21 dB.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.9 s.339
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• pp.49-56
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• 2005

Memory effect, which influence the performance of Doherty amplifier, become more significant and critical in designing these circuits as the modulation signal bandwidth and operation power level increase. This paper reports on an attempt to investigate, model and quantity the contribution of the electrical nonlinearity effects and the thermal memory effects to a Doherty amplifier's distortion generation. Also this raper reports on the development of an accurate dynamic expression of the instantaneous junction temperature as a function of the instantaneous dissipated power. This expression has been used in the construction of an electrothermal model for the Doherty amplifier. Parameters for the nelv proposed behavior model were determined from the Doherty amplifier measurements obtained under different excitation conditions. This study led us to conclude that the effects of the transistor self-heating phenomenon are important for signals with wideband modulation bandwidth(ex. W-CDMA or UMTS signal). Doherty amplifier with electrothermal memory effect compensator enhanced ACLR performance about 20 dB than without electrothemal memory effect compensator. Experiment results were mesured by 60W LDMOS Doherty amplifier and electrothermal memory effect compensator was simulated by ADS.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.2
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• pp.108-114
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• 2016

This paper presents a 2.6 GHz Doherty power amplifier IC to enhance the back-off efficiency. In order to apply to small-cell base stations, the Doherty power amplifier was fabricated using GaN-HEMT process for high power density. In addition, the implemented Doherty power amplifier was mounted on a QFN package. The implemented GaN-HEMT Doherty power amplifier was measured using LTE downlink signal with 10 MHz bandwidth and 6.5 dB PAPR for verification. A power gain of 15.8 dB, a drain efficiency of 43.0 %, and an ACLR of -30.0 dBc were obtained at an average output power level of 33.9 dBm.

• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.393-398
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• 2014

A highly efficient dual-mode linear CMOS stacked-FET power amplifier (PA) is implemented for 3G UMTS and 4G LTE handset applications. High efficiency is achieved at a backed-off output power ($P_{out}$) below 12 dBm by employing an active-bypass amplifier, which consumes very low quiescent current and has high load-impedance. The output paths between high- and low-power modes of the PA are effectively isolated by using a bypass switch, thus no RF performance degradation occurs at high-power mode operation. The fabricated 900 MHz CMOS PA using a silicon-on-insulator (SOI) CMOS process operates with an idle current of 5.5 mA and shows power-added efficiency (PAE) of 20.5%/43.5% at $P_{out}$ = 12.4 / 28.2 dBm while maintaining an adjacent channel leakage ratio (ACLR) better than -39 dBc, using the 3GPP uplink W-CDMA signal. The PA also exhibits PAE of 35.1% and $ACLR_{E-UTRA}$ of -33 dBc at $P_{out}$ = 26.5 dBm, using the 20 MHz bandwidth 16-QAM LTE signal.

• Journal of Advanced Navigation Technology
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• v.23 no.2
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• pp.179-185
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• 2019

In this paper, we have studied narrow-band analog pre-distortion linearization technique using UHF 400 MHz band 20 W power amplifier. The analog pre-distorter used the SC1894 radio frequency power amplifier linearizer(RFPAL) provided by MAXIM Corp and through the look-up table technique confirmed the intermodulation distortion(IMD) performance and the adjusted channel leakage ratio(ACLR) improvement for bandwidth below 1 MHz which does not operate on existing chips. In the 400 MHz (400 ~ 500 MHz) band, IMD performance and the ACLR improvement of up to 17.46 dB based on 1-channel offset and up to 16.6 dB based on 2-channel offset were confirmed. In the system requiring the same linearity, we confirmed power efficiency improvement of 12.41% at output power of over 40 W.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.27-30
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• 2005

In this paper, we designed and manufactured the distortion cancellation module which is able to compensate thermal-noise distortion by software The distortion cancellation algorithm not only bring forth system non-linear distortion by input level but also bring compensate component of distortion by thermal to get rid off distortion from now on. After TMS320C6711 DSP to recognize our algorithm, we manufactured the module for every kinds of system To evaluate efficiency of the distortion cancellation module, we designed and manufactured communication system. By measured result, if system output power is -3dBm equally, 12dB of ACLR has improved in 1MHz away from a center frequency, and also gain has increased up to 0.5dB.