• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.3
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• pp.174-178
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• 2013

A modified driving waveform is proposed to improve the address discharge characteristics using wall charge on the common electrodes in plasma display panel. In the driving scheme of plasma display, after a reset period, the negative charge are accumulated on two front electrodes and positive wall charge are accumulated on the address electrode. As the address discharge during an address period is produced when the scan and address pulses are applied at the same time, negative charge on the scan electrodes and positive charge on the address electrodes are mainly used. On the other hand, as the voltage are only maintained without applying the waveform during an address period on the common electrodes, the wall charge is not used on the common electrodes. In this paper, the address discharge characteristics are investigated with changing pulse applying time and applied voltage amplitude on the common electrodes and consequently the producing time of an address discharge are shortened about 200 ns compared with the conventional driving waveform.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.395-403
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• 2006

It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.575-578
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• 2004

The charging tendency of $Zn_2SiO_4:Mn^{2+}$ phosphor surface was modified in order to improve discharging characteristic of green cell in an ac-plasma display panel (ac-PDP). The Zinc-silicate ($Zn_2SiO_4:Mn^{2+}$) green-emitting phosphor was coated with magnesium oxide(MgO), which is viable to have positive charge on the surface. After fabricating the green cell with MgO-coated $Zn_2SiO_4:Mn^{2+}$, the electrical and optical properties in the cell were examined. It was found that the dynamic voltage margin could be increased while the address time was reduced. It may be ascribed to the change of charging tendency of $Zn_2SiO_4:Mn^{2+}$ phosphor by MgO coating, which makes it possible to stable wall-charge accumulation. When $Zn_2SiO_4:Mn^{2+}$ phosphor was coated with 1.3wt%-MgO, the address time was reduced 1.2 ${\mu}s$ and the address voltage lowered 25 V without any misfiring problem, compared to those of typical $Zn_2SiO_4:Mn^{2+}$ phosphor layer. The luminescence intensity of green cell using MgO-coated phosphor layer was also improved by 10%.

• Korean Journal of Materials Research
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• v.14 no.8
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• pp.552-557
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• 2004

Thin Ni-B films, 1 ${\mu}m$ thick, were electrolessly deposited on Cu bus electrode fabricated by electro deposition. The purpose of these films is to encapsulate Cu electrodes for preventing Cu oxidation and to serve as a diffusion barrier against copper contamination of dielectric layer in AC-plasma display panel. The layers were heat treated at $580^{\circ}C$(baking temperature of dielectric layer) with and without pre-annealing at $300^{\circ}C$($Ni_{3}B$ formation temperature) for 30 minutes. In the layer with pre-annealing, amount of Cu diffusion was lower about 5 times than that in the layer without pre-annealing. The difference of Cu concentration could be attributed to Cu diffusion before $Ni_{3}B$ formation at grain boundaries. However, the diffusion behavior of the layer with pre-annealing was similar to that of the layer without pre-annealing after $Ni_{3}B$ formation. With increasing annealing time, Cu concentration of both layers increased due to grain growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.148-151
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• 2000

$Mg_{2-2x}Ti_xO_2$ films were prepared by e-beam evaporation method to be used as possible substitutes for the conventional MgO protective layer. The oxygen content in the films and in turn, the ratio of metal to oxygen gradually increased with increasing the $TiO_2$ content in the starting materials. The pure MgO films exhibited the crystallinity with strong (111) orientation. The $Mg_{2-2x}Ti_xO_2$ films, however, had the crystallinity with (311) preferred orientation. When the $[TiO_2/(MgO+TiO_2)]$ ratios of 0.1 and 0.15 were used, the deposited films exhibited the secondary electron emission yields improved by 50% compared to that of the conventional MgO protective layer, which resulted in reduction in discharge voltage by 12%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.145-147
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• 2000

The secondary electron emission coefficient y of MgO single crystal according to the gas mix-ture ratio of Xe, $N_2$ to Ne have been investigated by $\gamma$-focused ion beam system. It is found that the MgO single crystals of (111) crystallinity has the highest $\gamma$ for operating Ne(Xe) ions ranging from 50eV to 200eV throughout this experiment. And it is found that the $\gamma$ for gas mixtures are much smaller than pure Ne ions.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.390-392
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• 2006

단일 서스테인 구동회로서 패널을 수평으로 이등 분할하고 직렬 연결하여 구동회로의 전류 스트레스를 저감하는 새로운 단일 에너지 회수 서스테인 구동회로를 제안한다. 기존의 단일 서스테인 구동회로는 +Vs 및 -Vs의 양극성 전원을 사용함에 따라 기존 구동회로에 비해 전류 스트레스는 그대로이면서 스위치 전압 스트레스가 두 배가 되어 회로 손실 및 발열이 높은 단점을 가지고 있다. 이를 개선하기 위해 제안하는 패널 분할 직렬 연결 단일 에너지 회수 서스테인 구동회로는 패널을 수평으로 이등 분할하고 하프 브리지 인버터를 각각 연결하여 구동 회로의 가스 방전 전류 및 패널 캐패시터의 변위 전류를 기존의 절반으로 줄여 스위치들의 전류 스트레스를 저감하게 된다. 또한 에너지 회수 회로는 능동소자로서 단 하나의 스위치와 단하나의 다이오드만을 사용하므로 그 구조가 단순하여 원가를 절감할 수 한다.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.628-631
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• 2002

$Al_2O_3$ capping layer and MgO protective layer were deposited by electron beam evaporation method using single crystal source. Thickness of the capping layer, $Al_2O_3$, was varied from 5 nm to 10 nm. Surface morphology was observed by SEM and AFM before and after hydration. And microstructure of deposited $Al_2O_3$ layer and chemical shift of electron binding energy were also observed by high resolution TEM and XPS, respectively, after hydration. From these results, it was found that Mg atoms diffused into $Al_2O_3$ layer, reacted with moisture and formed $Mg(OH)_2$ during hydration. As thickness of $Al_2O_3$ increased, extent of hydration increased. $Al_2O_3$ capped MgO thin films and uncapped MgO thin films were deposited on AC-PDP test panel to characterize discharge properties. Although $Al_2O_3$ has poor discharge properties rather than MgO, because of many hydrated species on the surface of MgO, similar discharge properties were observed.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.228-231
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• 2002

We report the effect of density of thin films on moisture adsorption and hydration of MgO thin film, usually used as a protective layer in AC-PDP After hydration, lots of hemispherical shaped clusters, $Mg(OH)_2$, formed on the surface of MgO thin films. However clusters formed on low-density thin films were bigger than those on high-density films. From ERD spectra, it seemed that the concentration of hydrogen was very high in the region 20 nm from the surface of MgO thin film. The low-density thin film had more hydrogen than high-density thin film. From simulation results of ERD and RBS it was found that hydration reaction also occurred in the inner part of the film. So diffusion of Mg atoms from the inner part of the film to the surface and $H_2O$ molecules from the surface to the inner part of the film is important. And because low density thin film has many short paths for diffusion of Mg atoms and $H_2O$ molecules, low-density thin film is more hydrated. So to suppress hydration of MgO thin films, high-density thin film is needed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.188-188
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• 2011

MgO는 암염구조의 이온결합성 화합물로 7.8 eV의 높은 띠 틈과 약 95%의 탁월한 투과도를 갖는다. 또한, ${\gamma}$ process에 의한 이차 전자 방출이 높고 이온 스퍼터링에 의한 표면 손상이 적어 면 방전 AC-PDP의 보호막으로 이용된다. 따라서 MgO 보호막에 관한 연구는 이차 전자 방출 계수를 높여 방전 전압을 감소시키고 높은 유전율과 투과도를 유지시키기 위한 목적으로 전개되어지고 있다. 본 연구는 이온 스퍼터링에 의한 MgO 보호막의 표면 특성의 변화를 알아보기 위해 이루어졌다. MgO 박막은 electron beam evaporation의 방법을 통해 챔버 내에 O 기체를 주입하고 P type Si 기판을 300$^{\circ}C$ 가열하여 40 nm 두께로 제작되었다. 박막 시료는 표면분석 전 초고진공챔버 내에서 표면에 산화된 불순물 제거를 위해 550$^{\circ}C$의 열처리가 되어졌다. 그리고 250 eV의 He 이온으로 박막 표면을 스퍼터링 하여 XPS, REELS, UPS를 이용하여 전자 및 광학적 특성을 연구하였다. XPS 분석을 통해 MgO 박막은 He 이온 스퍼터링에 의해 표면의 화학적 조성이 변하지 않는다는 것을 확인했다. MgO 박막에 이온 스퍼터링을 하면 표준 시료와 비교하여 Ep=1,500 eV일 때 7.54 eV에서 7.63 eV로 높아지는 경향이 있다. 일함수는 He 이온 스퍼터링 한 결과 3.85 eV로부터 4.09 eV로 약간 높아졌다. 또한, QUEELS simulation으로 얻은 가시광 투과도는 91~92%로 분석되었다.