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Preliminary X-ray Studies of a New Crystal form of 28 kDa Clonorchis sinensis Glutathione S-Transferase

  • Cho, Youn-Hye;Kim, Young-Kwan;Kim, Seung-Joon;Hong, Seong-Jong;Chung, Yong-Je
    • Korean Journal of Crystallography
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    • v.16 no.2
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    • pp.138-140
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    • 2005
  • A new crystal of helminth glutathione S-transferase, 28 kDa isozyme from Clonorchis sinensis has been grown from a 20% PEG MME 550 solution containing 50 mM $CaCl_{2}$ in 0.1 M bis-Tris buffer (pH 6.5) in $2{\sim}3$ days. The crystals diffract to $3.0{\AA}$ resolution and belong to the orthorhombic space group $P2_{1}2_{1}2_{1}$ with cell parameters $a=62.58{\AA},\;b=69.92{\AA},\;and\;c=339.67{\AA}$.

Magnetoresistance Properties of Spin Valves Using MoN Underlayer (MoN 하지층을 이용한 스핀밸브의 자기저항 특성)

  • Kim, Ji-Won;Jo, Soon-Chul;Kim, Sang-Yoon;Ko, Hoon;Lee, Chang-Woo
    • Journal of the Korean Magnetics Society
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    • v.16 no.5
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    • pp.240-244
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    • 2006
  • In this paper, magnetic properties and annealing behavior of spin valve structures using Mo(MoN) layers as underlayers were studied varying the thickness of the underlayers. The spin valve structure was consisted of Si substrate/$SiO_2(2,000{\AA})/Mo(MoN)(t{\AA})/NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(65\;{\AA})/Ta(25\;{\AA})$. Also, MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The resistivity of the MoN film increased as the $N_2$ gas flow rate was increased. After annealing at $600^{\circ}C$, XRD results did not show peaks of silicides. XPS results indicated MoN film deposited with 5 sccm of $N_2$ gas flow rate was more stable than the film deposited with 1 sccm of $N_2$ gas flow rate. The variations of MR ratio and magnetic exchange coupling fold were small for the spin valve structures using Mo(MoN) underlayers up to thickness of45 ${\AA}$. MR ratio of spin valves using MoN underlayers deposited with various $N_2$ gas flow rate was about 7.0% at RT and increased to about 7.5% after annealing at $220^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased to about 3.5%. Variation of $N_2$ gas flow rate up to 5 sccm did not change the MR ratio and $H_{ex}$ appreciably.

Effects of Auricular Acupressure on Smoking Cessation for Male High School Students (이압요법이 남자 고등학생의 금연에 미치는 효과)

  • Kang, Ja-yeon;Lee, Jong-hoon;Kang, Sei-young
    • The Journal of Internal Korean Medicine
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    • v.37 no.3
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    • pp.508-515
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    • 2016
  • Objective: The purpose of the study was to examine the effects of a five-week auricular acupressure (AA) program on smoking cessation for male high school students.Methods: From May 27 2015 to November 18 2015, this study investigated 66 high school students who had been smoking. More than four sessions of AA were given to participants, and surveys were conducted before each treatment. Once a week, the AA was administered at the endocrine point, lung point, throat point, nasal fossae point, bronchial tube point, and mouth point.Result: Thirty-four (51.5%) students reduced their number of cigarettes smoked per day, while 17 (25.7%) students complained of side effects.Conclusions: Results show that AA is generally effective, and side effects occur less often than with anti-smoking acupuncture. So AA could be preferred on smoking cessation for students.

Single Nucleotide Polymorphism in the Coding Region of Bovine Chemerin Gene and Their Associations with Carcass Traits in Japanese Black Cattle

Anti-oxidant effect of forsythia suspensa on cellular damage in the chronic disease (연교의 항산화 효과 연구)

  • Young-Eun Kim;Min-Jin Kim;Su-Jin Bae;Seon Been Bak;Sun-Dong Park;Kwang-Il Park;Young Woo Kim
    • Herbal Formula Science
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    • v.32 no.1
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    • pp.51-61
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    • 2024
  • Objectives : This study induced oxidative stress in HepG2 cells by treating them with AA+iron and investigated the effects of forsythia suspensa extract on this stress, as well as elucidated the molecular mechanisms underlying its hepatoprotective effects. Methods : To confirm the antioxidative effects of FSE, HepG2 cells were induced with AA+iron to induce oxidative stress, followed by MTT assay. Additionally, the effect of FSE in reducing the increased ROS levels and mitochondrial damage induced by AA+iron in HepG2 cells was confirmed using FACS. Furthermore, western blot analysis were conducted to investigate the molecular mechanisms underlying the hepatoprotective effects of FSE. Results : FSE increased the decreased cell viability induced by AA+iron. Additionally, FSE normalized the expression of apoptosis-related proteins induced by AA+iron. The elevated ROS levels in HepG2 cells induced by AA+iron were reduced by FSE, and the increase in Rh123-negative cells induced by AA+iron was attenuated by FSE. Moreover, FSE activated the protein expression of AMPK and its related phosphorylating enzymes, LKB1 and ACC. Furthermore, FSE activated YAP and its upstream phosphorylating enzyme, LATS1. Conclusions : These results demonstrate that FSE has an inhibitory effect on oxidative stress induced by AA+iron and may have potential hepatoprotective effects.

Dependence of Magnetoresistance on the Underlayer Thickness for Top-type Spin Valve (Top형 스핀밸브 구조의 Si 기판에서의 하지층 두께에 따른 자기저항 특성 연구)

  • Ko, Hoon;Kim, Sang-Yoon;Kim, Soo-In;Lee, Chang-Woo;Kim, Ji-Won;Jo, Soon-Chul
    • Journal of the Korean Magnetics Society
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    • v.17 no.2
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    • pp.95-98
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    • 2007
  • In this paper, the magnetic properties and the annealing behavior of spin valve structures with Mo(MoN) underlayers were studied for various underlayer thickness. The spin valve structure was Si substrate/Mo(MoN)$(t{\AA})/NiFe(21{\AA})/CoFe(28{\AA})/Cu(22{\AA})/CoFe(18{\AA})/IrMn(65{\AA})/Ta(25 {\AA})$. Mo and MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The deposition rate of the MoN thin film was decreased and tile resistivity of the MoN thin films were increased as the $N_2$ gas flow was increased. The variations of MR ratio and magnetic exchange coupling field of spin valve structure were smaller with MoN underlayers than that with Mo underlayers up to thickness of $51{\AA}$. MR ratio of spin valves with Mo underlayers was 2.86% at room temperature and increased up to 2.91 % after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 2.16%. The MR ratio of spin valves structure with MoN underlayers for $N_2$ gas flow 1 sccm was 5.27% at room temperature and increased up to 5.56% after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 4.9%.

Texture and Plastic Strain Ratio Changes during a 2 Step Asymmetric Rolling and Annealing of AA5083 Al Alloy Sheet (2단계 비대칭 압연과 열처리한 AA5083 Al 합금판재의 집합조직과 소성변형비 변화)

  • Jeong, H.B.;Lee, J.H.;Kim, G.H.;Nam, S.K.;Kim, I.
    • Transactions of Materials Processing
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    • v.23 no.2
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    • pp.82-87
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    • 2014
  • The plastic strain ratio is one of the factors that affect the deep drawability of Al alloy sheet. The deep drawability of Al alloy sheet is limited because of its low plastic strain ratio. Therefore an increase in the plastic strain ratio to improve the deep drawability of Al alloy sheet is needed. The current study investigated the increase of the plastic strain ratio and the change in texture of AA5083 Al alloy sheet after a 2 step asymmetric rolling with heat treatments. The average plastic strain ratio of initial AA5083 Al alloy sheets was 0.83. After the first asymmetric rolling step of 88% deformation and subsequent heat treatment at $320^{\circ}C$ for 10 minutes the value was still 0.83. After the second asymmetric rolling of 14% reduction and subsequent heat treatment at $330^{\circ}C$ for 10 minutes the plastic strain ratio rose to 1.01. The average plastic strain ratio after the 2 step asymmetric rolling and heat treatment is 1.2 times higher than that of initial AA5083 Al alloy sheet. This result is related to the development of ND/<111> texture component after the second asymmetric rolling and heat treatment.

Fabrication of a Depletion mode n-channel GaAs MOSFET using $Al_2O_3$ as a gate insulator ($Al_2O_3$ 절연막을 게이트 절연막으로 이용한 공핍형 n-채널 GaAs MOSFET의 제조)

  • Jun, Bon-Keun;Lee, Suk-Hyun;Lee, Jung-Hee;Lee, Yong-Hyun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.1
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    • pp.1-7
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    • 2000
  • In this paper, we present n-channel GaAs MOSFET having $Al_2O_3$ as gate in insulator fabricated on a semi-insulating GaAs substrate. 1 ${\mu}$m thick undoped GaAs buffer layer, 1500 ${\AA}$ thick n-type GaAs, undoped 500 ${\AA}$ thick AlAs layer, and 50 ${\AA}$ GaAs caplayer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate oxidized. When it was wet oxidized, AlAs layer was fully converted $Al_2O_3$. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S${\cdot}$I GaAs was suitable in realizing depletion mode GaAs MOSFET.

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Fabrication of a depletion mode p-channel GaAs MOSFET using $Al_2O_3$ gate insulator ($Al_2O_3$ 게이트 절연막을 이용한 공핍형 p-채널 GaAs MOSFET의 제조)

  • Jun, Bon-Keun;Lee, Tae-Hyun;Lee, Jung-Hee;Lee, Yong-Hyun
    • Journal of Sensor Science and Technology
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    • v.8 no.5
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    • pp.421-426
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    • 1999
  • In this paper, we present p-channel GaAs MOSFET having $Al_2O_3$ as gate insulator fabricated on a semi-insulating GaAs substrate, which can be operated in the depletion mode. $1\;{\mu}m$ thick undoped GaAs buffer layer, $4000\;{\AA}$ thick p-type GaAs epi-layer, undoped $500{\AA}$ thick AlAs layer, and $50\;{\AA}$ thick GaAs cap layer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate and this wafer was oxidized. AlAs layer was fully oxidized as a $Al_2O_3$ thin film. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S I GaAs was successful in realizing depletion mode p-channel GaAs MOSFET.

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Mediating and Moderating Effects of Self-regulation and Career Identity in the Relationship Between Achievement Value and Academic Adjustment of Middle School Students (중학생의 성취가치와 학업적응의 관계에서 자기조절과 진로정체감의 매개 및 조절효과)

  • Kim, Do Hee
    • Journal of Digital Convergence
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    • v.16 no.11
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    • pp.589-598
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    • 2018
  • The purpose of this study is to investigate the mediating effect of self-regulation(SR) and the moderating effect of career identity(CI) in predicting academic achievement(AA) by middle school students' achievement value(AV). The subjects were 1,088 male and 970 female students in the third year of middle school. A conditional process analysis using SPSS and Hayes' process macro was conducted. The results were as follows. First, the partial mediation effect of SR was significant in the relationship between AV and AA. Second, the moderating effect of CI was notable in the relationship between AV and SR, and AV and AA respectively. Finally, the mediation effect of AV on AA through SR was found to decrease as CI increased. These results show that supporting the development of CI for students with low AV helps to improve SR and AA. However, as the effect of CI was found to be weaker than the effect of AV or SR on AA, the follow-up research exploring ways to support the achievement value of middle school students are suggested.