• Journal of the Korean Institute of Gas
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• v.28 no.2
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• pp.76-83
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• 2024

In the semiconductor manufacturing process, the Diffusion process generates various reactive by-products. These by-products are deposited inside the pipes of post-processing and exhaust treatment systems, posing a potential risk of substantial dust explosions. In this study, three methods material verification, selection of analysis samples, and risk analysis were employed to address the substances produced during the Diffusion process. Among the materials handled in the Diffusion process, ZrO₂, TEOD, and E-DEOS were identified as raw material capable of generating by-product dust. Test for Minimum Ignition Energy and dust explosion were conducted on the by-products collected from each processing facility. The results indicated that, in the case of MIE, none of the by-products ignited. However, the dust explosion test revealed that ZrO₂ exhibited a maximum pressure of 7.6 bar and K_st value of 73.3 bar·m/s, its explosive hazard. Consequently, to mitigate such risks in semiconductor processes, it is excessive buildup.

• Journal of Korean Society on Water Environment
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• v.21 no.6
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• pp.664-668
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• 2005

An experimental study for the comparison of nitrogen and phosphorus removal efficiencies between $A^2/O$ and modified Phostrip (M-Phostrip process) were carried out with bench-scale reactors. In case of nitrogen removal efficiencies both of processes showed similar ones when influent organic loadings were high. However, M-phostrip process was more effective than $A^2/O$ at low organic loadings. This is why M-phostrip process consumes the whole mass of influent organics as a carbon sources for denitrification in anoxic reactor but the anoxic reactor of $A^2/O$ process utilizes the residual carbon followed by consumming a part of influent carbon for phosphorus release in anaerobic reactor. $A^2/O$ process required the influent COD/T-P and COD/TKN ratios were more than 56 and 10, respectively, to take place the phosphorus release in anaerobic process and phosphorus uptake in oxic process. However, the luxury uptake of phosphorus in M-phostrip process was not affected by influent COD/T-P and COD/TKN ratios and the adverse effect of nitrate in return sludge introduced to the p-stripper from the 2nd clarifier was not significant due to the configurational advantage of the p-stripper.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.6
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• pp.1088-1094
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• 2006

In this paper, we establish a mode oxidation process for formation of $Ta_2O_5$ insulator film. The voltage drop in the electrolyte is affected not in voltage change but in current change. If the voltage drop in the electrolyte is same with cathode oxidation voltage, the current changes logarithmically in proportion to the voltage drop in interface of Ta2O5/electrolyte. As a result of the measurement on the electrical property of $Ta_2O_5$ insulator film, when the thickness of the insulator film is $1500\AA$, the breakdown voltage is 350volts Ind dielectric constant is 29.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.10 no.1
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• pp.27-36
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• 2012

Metal chloride waste is generated as a main waste streams in a series of electrolytic processes of a pyrochemical process. Different from carbonate or nitrate salt, metal chloride is not decomposed into oxide and chlorine but it is just vaporized. Also, it has low compatibility with conventional silicate glasses. Our research group adapted the dechlorination approach for the immobilization of waste salt. In this study, the composition of SAP ($SiO_2-Al_2O_3-P_2O_5$) was adjusted to enhance the reactivity and to simplify the solidification process as a subsequent research. The addition of $Fe_2O_3$ into the basic SAP decreased the SAP/Salt ratio in weight from 3 for SAP 1071 to 2.25 for M-SAP( Fe=0.1). The experimental results indicated that the addition of $Fe_2O_3$ increased the reactivity of M-SAP with LiCl-KCl but the reactivity gradually decreased above Fe=0.1. Also, introducing $B_2O_3$ into M-SAP requires no glass binder for the consolidation of reaction products. U-SAP ($SiO_2-Al_2O_3-Fe_2O_3-P_2O_5-B_2O_3$) could effectively dechlorinate the LiCl-KCl waste and its reaction product could be consolidated as a monolithic form without a glass binder. The leaching test result indicated that U-SAP 1071 was more durable than other SAPs wasteform. By using U-SAP, 1 g of waste salt could generated 3~4 g of wasteform for final disposal. The final volume would be about 3~4 times lower than the glass-bonded sodalite. From these results, it could be concluded that the dechlorination approach using U-SAP would be one of prospective methods to manage the volatile waste salt.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.2
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• pp.184-190
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• 2005

A new VFAs production process from sewage sludge using Fenton's oxidation was investigated. Optimum concentrations of $H_2O_\;and\;Fe^{2+}$ as well as optimum reaction temperature for VFAs production were studied. In the presence of $Fe^{2+}$ as catalyst, the VFAs formation rate increased about 4 times compared to $H_2O_2$ oxidation process without $Fe^{2+}$. Optimum concentrations of $H_2O_2$ and $Fe^{2+}$ were 0.62 M and 0.007 M, respectively. VFAs formation reaction proceeded rapidly within 1 min and VFAs formed degraded partly to acetic acid and $CO_2$, which exhibited series reaction characteristics. Based on the economic aspect, reaction temperature of $25^{\circ}C$ and 10 min of reaction time were thought to be proper reaction conditions. The effect of initial pH in the range of $3{\sim}6.3$ on the VFAs formation was not observed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.21-21
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• 2014

$CrN/Al_2O_3/CrN$ 다층 코팅을 HIPIMS와 ALD간 하이브리드 코팅법을 통해 형성하였다. ALD를 통해 CrN 층에 도입한 $Al2O_3$층의 두께 및 위치가 $CrN/Al_2O_3/CrN$ 다층 코팅층의 미세구조, 표면 거칠기, 기계적 특성 및 화학적 특성에 미치는 영향에 대해 조사하였다. 전체 공정시간은 거의 변화시키지 않고도, ALD를 이용한 $Al2O_3$층의 삽입에 의하여 기계적/화학적 특성이 크게 개선될 수 있음을 확인하였으며, 개선된 특성에 대한 원인에 대해 조사하였다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.85-91
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• 1999

$H:LiNbO_3$ optical modulator with Cu/parylene electrode layer, which has a merits in the bandwidth, power consumption and fabrication conditions as compared with conventional Au/Cr/$SiO_2$, is proposed and fabricated. Analysis and design of optical modulator is performed by finite element calculation. Various unit processes for fabricating the proposed modulator, 1550nm $H:LiNbO_3$ optical waveguide, parylene buffer layer, and CPW Cu electrode, were developed, After dicing and end-face polishing of fabricated modulator chip, optical modulation responses as sawtooth electrical driving voltage has been measured at low frequencies. Properties of optical waveguide had not been changed before and after Cu/parylene electrode processes, which make confirm the reproducible fabrication of optical modulator.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.1
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• pp.43-48
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• 2024

The discovery of a two-dimensional electron gas (2DEG) at the interface of LaAlO₃ (LAO) and SrTiO₃ (STO) substrates has sparked significant interest, providing a foundation for cutting-edge research in electronic devices based on complex oxide heterostructures. However, conventional methods for producing LAO thin films, typically employing techniques like pulsed laser deposition (PLD) within physical vapor deposition (PVD), are associated with high costs and challenges in precisely controlling the La and Al composition within LAO. In this study, we adopted a cost-effective alternative approach-solution-based processing-to fabricate LAO thin films and investigated their electrical properties. By adjusting the concentration of the precursor solution, we varied the thickness of LAO films from 2 to 65 nm and determined the sheet resistance and carrier density for each thickness. After vacuum annealing, the sheet resistance of the conductive channel ranged from 0.015 to 0.020 Ω·s^-1, indicating that electron conduction occurs not only at the LAO/STO interface but also into the STO bulk region, consistent with previous studies. These findings demonstrate the successful formation and control of 2DEG through solution-based processing, offering the potential to reduce process costs and broaden the scope of applications in electronic device manufacturing.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.7-11
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• 2000

The low-voltage driven $SrTiO_3$ceramic varistor device was fabricated from $SrTiO_3$ powders prepared by co-precipitation method with $CuO-SiO_2$additives. Compare with conventional process, this process has advantages such as the reduction of the sintering temperature of $SrTiO_3$ ceramics by 100-$150^{\circ}C$ and the simplification of processing procedure. The non-linear coefficient value ($\alpha$) of the varistor showed 8.47 when it was sintered at $1350^{\circ}C$ for 2 h with 5 wt% additives in reducing atmosphere of 5% $H_2/N_2$ mixed gas. The low-voltage driven $SrTiO_3$ceramic varistor was obtained which has a breakdown voltage as low as 7 V.

• Journal of IKEEE
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• v.22 no.4
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• pp.1230-1233
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• 2018

$Al_2O_3$ films with the thickness of 50 nm were fabricated on 4H-SiC by aerosol deposition, and their electrical properties were characterized with different post annealing conditions. As a result, the $Al_2O_3$ film annealed in $N_2$ atmosphere showed decreased fixed charge density at the interface area between the $Al_2O_3$ and SiC, and increased leakage currents due to the generation of oxygen vacancies. From this result, it was confirmed that proper $N_2$ and $O_2$ ratio for the post annealing process is important.