• Nuclear Engineering and Technology
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• 제56권7호
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• pp.2740-2747
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• 2024

The sintering process acquired ferromagnetic copper ferrite ceramic material with a small concentration of Ni ion at 1100 ℃ for 1 h. Previously, copper ferrite with Ni proportions powder was acquired by the wet chemical process according to the relation CuFe_2-xNi_xO₄ where x takes values 0.0, 0.015, 0.03, 0.04, and 0.05. The role of Ni ion in the copper ferrite structure was investigated by X-ray analysis, Scanning electron microscope, EDX analysis, and density measurements. The gamma-ray shielding properties for the fabricated CuFeNiO ceramics samples were evaluated using the Monte Carlo simulation method. The obtained results show an enhancement in the linear attenuation coefficient for the fabricated ceramics with increasing the insertions of Ni ions within the fabricated samples, where increasing the Ni ions concentration between 0 and 1.19 wt% increases the linear attenuation by between 1.581 and 1.771 cm^-1 (at 0.103 MeV), 0.304-0.338 cm^-1 (at 0.662 MeV), and 0.160-0.178 cm^-1 (at 2.506 MeV), respectively. Simultaneously, the radiation protection efficiency for a 1 cm thickness of the fabricated samples increased between 14.8 and 16.3% with increasing the Ni ions between 0 and 1.19 wt%. Although the Ni doping concentration does not exceed 1.5 wt% of the total composition of the fabricated ceramics, the shielding capacity of the fabricated ceramics was enhanced by more than 11%, along the studied energy interval. Therefore, the fabricated samples can be used in gamma-ray shielding applications.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.5.2-5.2
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• 2009

From 10 years ago, the development of nano-devices endeavored to achieve reconstruction of information technology (IT) and nano technology (NT) industry. Among the many materials for the IT and NT industry, zinc oxide (ZnO) is a very promising candidate material for the research of nano-device development. Nano-structures of ZnO-based materials were grown easily via various methods and it attracts huge attention because of their superior electrical and optical properties for optoelectronic devices. Recently, among the various growth methods, MOCVD has attracted considerable attention because it is suitable process with benefits such as large area growth, vertical alignment, and accurate doping for nano-device fabrication. However, ZnO based nanowires grown by MOCVD process were had the principal problems of 1st interfacial layers between substrate and nanowire, 2nd a broad diameter (about 100 nm), and 3rd high density, and 4th critical evaporation temperature of Zinc precursors. In particular, the growth of high performance nanowire for high efficiency nano-devices must be formed at high temperature growth, but zinc precursors were evaporated at high temperature.These problems should be repaired for materialization of ultra high performance quantum devices with quantum effect. For this reason, we firstly proposed the growth method of vertical aligned slim MgZnO nanowires (< 10 nm) without interfacial layers using self-phase separation by introduced Mg at critical evaporation temperature of Zinc precursors ($500^{\circ}C$). Here, the self-phase separation was reported that MgO-rich and the ZnO-rich phases were spontaneously formed by additionally introduced Mg precursors. In the growth of nanowires, the nanowires were only grown on the wurzite single crystal seeds as ZnO-rich phases with relatively low Mg composition (~36 at %). In this study, we investigated the microstructural behaviors of self-phase separation with increasing the Mg fluxes in the growth of MZO NWs, in order to secure drastic control engineering of density,diameter, and shape of nanowires.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.195-196
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• 2009

This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.

• 전기화학회지
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• 제1권1호
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• pp.1-7
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• 1998

중간온도$(700\~800^{\circ}C)$형 고체산화물 연료전지(solid oxide filet cells)의 양극재료로 이용을 목표로 $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3,\;(x=0.0\~0.5)$ 분말을 합성하고 이의 열적 안정성, 전도특성을 조사하였다. 또한 이를 CGO(Cerium-Gadolinium Oxide) 전해질 디스크에 부착하여 양극특성을 조사하였다. 양극재료를 구연산 법에 의하여 $800^{\circ}C$에서 하소하여 분말을 합성하였을 때, Fe의 함량에 상관없이 모두 페롭스카이트 단일상을 얻을 수 있었다. 합성분말의 열적 안정성을 측정하였는데, Fe의 함량이 적을수록 열적 안정성이 열악하여 x=0.0인 시료는 $1300^{\circ}C$에서 분해되었다 그러나 Fe이 치환된 재료의 경우에는 $1400^{\circ}C$까지 분해현상은 없었으나 $1300^{\circ}C$ 근처에서 용응되는 현상이 관찰되어 양극층의 접착온도를 $1300^{\circ}C$ 이하로 설정해야 함을 알았다. $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3,\;(x=0.0\~0.5)$로 반쪽전지를 제작하여 $800^{\circ}C$ 공기중에서 전지를 가동하며 양극의 산소환원 반응에 대한 활성을 조사한 결과 조성에 상관없이 $La_{0.9}Sr_{0.1}MnO_3$보다 우수한 활성을 가졌고, $x=0.0\~0.5$인 전극중에서는 x=0.2일 때 가장 좋은 양극특성을 보였다. 이와 같이 x=0.2인 경우에 가장 우수한 활성을 갖는 이유를, Fe의 함량이 많은 경우는 열적 안정성이 우수하나산소환원 반응에 대한 활성은 감소하므로 x=0.2에서 열적 안정성과 활성 사이에 최적의 trade-off가 나타남으로 설명하였다. x=0.2인 시료의 전기 전도도를 직류 4단자법에 의하여 측정하였을 때 $800^{\circ}C$에서 51 S/cm의 값을 나타내었고, 교류 2단자법으로 측정한 이온 전도도는$800^{\circ}C$에서 $6.0\times10^{-4}S/cm$의 값을 나타내었다. 즉 이 물질은 혼합 전도체로서 전극의 전 표면이 반응의 활성점으로 작용할 가능성이 있고, 이로부터 이들이 $La_{0.9}Sr_{0.1}MnO_3$보다 우수한 양극활성을 갖는 이유를 설명할 수 있었다.

• Journal of Electrochemical Science and Technology
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• 제14권4호
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• pp.388-396
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• 2023

Photoelectrochemical (PEC) water splitting is a vital source of clean and sustainable hydrogen energy. Moreover, the large-scale H₂ production is currently necessary, while long-term stability and high PEC activity still remain important issues. In this study, a GaN-based photoelectrode was modified by an additional NH₃ treatment (900℃ for 10 min) and its PEC behavior was monitored. The bare GaN exhibited a highly crystalline wurtzite structure with the (002) plane and the optical bandgap was approximately 3.2 eV. In comparison, the NH₃-treated GaN film exhibited slightly reduced crystallinity and a small improvement in light absorption, resulting from the lattice stress or cracks induced by the excessive N supply. The minor surface nanotexturing created more surface area, providing electroactive reacting sites. From the surface XPS analysis, the formation of an N-Ga-O phase on the surface region of the GaN film was confirmed, which suppressed the charge recombination process and the positive shift of E_FB. Therefore, these effects boosted the PEC activity of the NH₃-treated GaN film, with J values of approximately 0.35 and 0.78 mA·cm^-2 at 0.0 and 1.23 V_RHE, respectively, and an onset potential (V_on) of -0.24 V_RHE. In addition, there was an approximate 50% improvement in the J value within the highly applied potential region with a positive shift of V_on. This result could be explained by the increased nanotexturing on the surface structure, the newly formed defect/trap states correlated to the positive V_on shift, and the formation of a GaO_xN_1-x phase, which partially blocked the charge recombination reaction.

• 한국수소및신에너지학회논문집
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• 제34권5호
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• pp.413-420
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• 2023

Holmium-doped TiO₂ nanotubes (Ho-TNTs) were manufactured through anodization treatment and electrochemical deposition, and optimization experiments were conducted using various Holmium doping concentrations and time as variables. Surface as well as electrochemical characteristics were analyzed to study the prepared photocatalysts. Ho-TNTs were found to exist only in anatase phase through X-ray diffraction analysis. Ho-TNTs with 0.01 wt% 100 seconds shows a photocurrent density of 3.788 mA/cm² and an effective photo-conversion efficiency (PCE) of 4.30%, which is more efficient than pure TiO₂ nanotubes (pure-TNTs) (at bias potential 1.5 V vs. Hg/HgO). The photocatalytic activity of the aforementioned Ho-TNTs for hydrogen production was evaluated with the result of -29.20 µmol/h·cm².

• 한국전기전자재료학회논문지
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• 제28권10호
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• pp.665-669
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• 2015

We investigated and compared two methods of in-situ oxidation and chemical etching treatment (CET) to remove the boron rich layer (BRL). The BRL is generally formed during boron doping process. It has to be controlled in order not to degrade carrier lifetime and reduce electrical properties. A boron emitter is formed using $BBr_3$ liquid source at $930^{\circ}C$. After that, in-situ oxidation was followed by injecting oxygen of 1,000 sccm into the furnace during ramp down step and compared with CET using a mixture of acid solution for a short time. Then, we analyzed passivation effect by depositing $Al_2O_3$. The results gave a carrier lifetime of $110.9{\mu}s$, an open-circuit voltage ($V_{oc}$) of 635 mV at in-situ oxidation and a carrier lifetime of $188.5{\mu}s$, an $V_{oc}$ of 650 mV at CET. As a result, CET shows better properties than in-situ oxidation because of removing BRL uniformly.

• 대한화학회지
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• 제42권6호
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• pp.618-628
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• 1998

순수한 CaO, Mn-doped CaO, Mn/CaO, K/CaO 촉매를 제조하고 이들의 메탄 활성화반응에 대한 촉매활성을 600∼800$^{\circ}C$ 온도영역에서 실험하여 산화칼슘의 촉매활성에 대한 망간과 칼륨의 첨가효과를 조사하였다. 촉매의 특성을 조사하기 위하여 X-선 분말회절분석(XRD), X-선 광전자분석(XPS), 주사전자현미경분석(SEM), 시차열분석(DSC) 및 열무게분석(TG)을 실시하였다. 촉매반응은 직결 기체크로마토그래피를 이용한 단방향 흐름 반응기로서 이루어졌다. 표준반응조건은 $p(CH_4)/p(O_2)=250$ Torr/50 Torr이며 반응기체의 주입속도는 30mL/min, 그리고 He 희석기체와 함께 전체압력은 1 atm이였다. 실험한 촉매들 중에서 6.3 mol% Mn-doped CaO 촉매가 가장 우수한 $C_2$ 선택성을 보였으며 775$^{\circ}C$에서 $C_2$ 선택성과 $C_2$ 수율이 각각 43.2%와 8.0% 이었다. 적은 양의 망간을 도프한 산화칼슘 촉매들은 망간의 양이 증가함에 따라 $C_2$ 선택성이 향상되는 경향을 보였으나 많은 양의 망간([Mn]>6.3 mol%)을 도프한 촉매에서는 $C_2$ 선택성이 감소하는 경향을 보였다. 금속이온이 도프되지 않은 6 wt.% Mn/CaO와 6 wt.% K/CaO 촉매는 700$^{\circ}C$에서 각각 13.2%와 30.9%의 $C_2$ 선택성을 보여 담지효과는 Mn보다도 K가 훨씬 우수함을 보였다. CaO와 Mn-doped CaO 촉매의 전기전도도를 $10^{-3}∼10^{-1}\;atm$의 산소분압 영역에서 측정한 결과 모두 p형의 전기적 특성을 보였으며 도프한 망간의 농도가 증가함에 다라 전기전도도는 감소하는 경향을 보였다. 촉매표면에 생성된 틈새형 산소이온이 메탄을 활성화할 수 있음을 제안하였고 틈새형 사소이온의 생성을 고체화학적 관점에서 논의하였다.

• 한국표면공학회지
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• 제50권4호
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• pp.282-288
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• 2017

$Eu^{3+}$- or $Sm^{3+}$-doped $La_2MoO_6$ phosphors were synthesized with different concentrations of activator ions via a solid-state reaction. The X-ray diffraction patterns exhibited that crystalline structures of all the phosphors were tetragonal systems with the dominant peak occurring at (103) plane, irrespective of the concentration and the type of activator ions. The crystallites showed the pebble-like crystalline shapes and the average crystallite size increased with a tendency to agglomerate as the concentration of $Eu^{3+}$ ions increased. The excitation spectra of $Eu^{3+}$-doped $La_2MoO_6$ phosphors contained an intense charge transfer band centered at 331 nm in the range of 250-370 nm and three weak peaks at 381, 394, and 415 nm, respectively, due to the $^7F_0{\rightarrow}^5L_7$, $^7F_0{\rightarrow}^5L_6$, and $^7F_0{\rightarrow}^5D_3$ transitions of $Eu^{3+}$ ions. The emission spectra under excitation at 331 nm exhibited a strong red band centered at 620 nm and two weak bands at 593 and 704 nm. As the concentration of $Eu^{3+}$ increased from 1 to 20 mol%, the intensities of all the emission bands gradually increased. For the $Sm^{3+}$-doped $La_2MoO_6$ phosphors, the emission spectra consisted of an intense emission band at 607 nm arising from the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ transition and three relatively small bands at 565, 648, and 707 nm originating from the $^4G_{5/2}{\rightarrow}^6H_{5/2}$, $^4G_{5/2}{\rightarrow}^6H_{9/2}$, and $^4G_{5/2}{\rightarrow}^6H_{11/2}$ transitions of $Sm^{3+}$, respectively. The intensities of all the emission bands approached maxima when concentration of $Sm^{3+}$ ions was 5 mol%. These results indicate that the optimum concentrations for highly-luminescent red and orange emission are 20 mol% of $Eu^{3+}$ and 5 mol% of $Sm^{3+}$ ions, respectively.

• Nuclear Engineering and Technology
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• 제56권4호
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• pp.1544-1551
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• 2024

A unique brick series based on Vietnamese clay was manufactured at 114.22 MPa pressure rate for γ-ray attenuation purposes, consisting of (x) metallic waste & (90%-x) red clay mineral & 10% (hardener mixed with epoxy resin), where (x) is equal to the values 0%, 20%, 40%, 50%, and 70%. The impacts of industrial metal waste ratio in the structure and radiation protective characteristics were evaluated experimentally. The increase in metallic waste doping concentrations from 0% to 70% was associated with an increase in the manufactured brick's density (ρ) from 2.103 to 2.256 g/cm³ while the fabricated samples' porosity (Φ) decreased from 11.7 to 1.0%, respectively. Together with a rise in fabricated brick's density and a decrease in their porosities, the manufactured bricks' γ-ray attenuation capacities improved. The measured linear attenuation coefficient (μ, cm^-1) was improved by 30.8%, 22.1%, 21.6%, and 19.7%, at E_γ equal to the values respectively 0.662, 1.173, 1.252, and 1.332 MeV, when the metallic waste concentration increased from 0% to 70%, respectively. The study demonstrates that manufactured bricks exhibit superior radiation shielding properties, with radiation protection efficiencies of 88.4%, 90.0%, 91.7%, 92.1%, and 92.4% for bricks with industrial metal waste contents of 0%, 20%, 40%, 50%, and 70%, respectively, at γ-ray energy (E_γ) of 1.332 MeV.