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2009 Pandemic Influenza A(H1N1) Infections in the Pediatric Cancer Patients and Comparative Analysis with Seasonal Influenza (소아암 환자에서 2009 대유행 인플루엔자 A(H1N1) 감염의 임상적 고찰 및 계절 인플루엔자와의 비교 분석)

  • Choi, Soo Han;Yoo, Keon Hee;Ahn, Kangmo;Sung, Ki Woong;Koo, Hong Hoe;Kim, Yae Jean
    • Pediatric Infection and Vaccine
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    • v.19 no.2
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    • pp.61-70
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    • 2012
  • Purpose: This study was performed to compare the clinical characteristics of 2009 pandemic influenza A(H1N1) [A(H1N1) pdm09] and seasonal influenza A infection in the pediatric cancer patients. Methods: A retrospective review was performed in the pediatric cancer patients who had confirmed A(H1N1)pdm09 infection at Samsung Medical Center from August 2009 to February 2010. For the comparison, the medical records of pediatric cancer patients with seasonal influenza A from January 2000 to May 2009 were reviewed retrospectively. Results: Eighty-two A(H1N1)pdm09 infections were confirmed in the pediatric cancer patients. Ten patients (12.2%) developed complicated clinical course by lower respiratory infections or extrapulmonary infections; 4 pneumonia, 1 bronchitis, 1 pericarditis with pneumonia, 1 encephalitis with pneumonia, 2 meningitis and 1 pericarditis. Three patients received mechanical ventilator and ICU care. Three pediatric cancer patients (3.7%) died. The risk factors related to complicated A(H1N1)pdm09 infections were date of infection (44-45th week 2009) and nosocomial infection. When comparing with previous seasonal influenza A infections, more prompt and aggressive antiviral therapy was given in A(H1N1)pdm09 infections. Conclusion: The A(H1N1)pdm09 infections caused a various clinical manifestations including fatal cases in pediatric cancer patient during pandemic season. There was no significant difference in clinical course between influenza A(H1N1)pdm09 and seasonal influenza A infections except the antiviral treatment strategy.

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Design of Serial-Parallel Multiplier for GF($2^n$) (GF($2^n$)에서의 직렬-병렬 곱셈기 구조)

  • 정석원;윤중철;이선옥
    • Journal of the Korea Institute of Information Security & Cryptology
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    • v.13 no.3
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    • pp.27-34
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    • 2003
  • Recently, an efficient hardware development for a cryptosystem is concerned. The efficiency of a multiplier for GF($2^n$)is directly related to the efficiency of some cryptosystem. This paper, considering the trade-off between time complexity andsize complexity, proposes a new multiplier architecture having n[n/2] AND gates and n([n/2]+1)- $$\Delta$_n$ = XOR gates, where $$\Delta$_n$=1 if n is even, $$\Delta$_n$=0 otherwise. This size complexity is less than that of existing ${multipliers}^{[5][12]}$which are $n^2$ AND gates and $n^2$-1 XOR gates. While a new multiplier is a serial-parallel multiplier to output a result of multiplication of two elements of GF($2^n$) after 2 clock cycles, the suggested multiplier is more suitable for some cryptographic device having space limitations.

Structural Analyses and Properties of $Ti_{1-x}Al_xN$ Films Deposited by PACVD Using a $TiCl_4/AlCl_3/N_2/Ar/H_2$ Gas Mixture ($TiCl_4/AlCl_3/N_2/Ar/H_2$ 반응계를 사용하는 플라즈마화학증착법에 의한 $Ti_{1-x}Al_xN$ 박막의 구조분석 및 물성)

  • 김광호;이성호
    • Journal of the Korean Ceramic Society
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    • v.32 no.7
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    • pp.809-816
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    • 1995
  • Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

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Study on $Ch{\acute{e}}n$ $Xiuyu\acute{a}n$ by analysing $Y\bar{i}xues\bar{a}nz\grave{i}j\bar{i}ng$ (의학삼자경(醫學三字經)에 나타난 진수원(陳修園) 의학 사상에 대한 문헌적 연구 I)

  • Kim, Jai-Eun;Choi, Dall-Yeong
    • Journal of Physiology & Pathology in Korean Medicine
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    • v.22 no.4
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    • pp.709-717
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    • 2008
  • $Ch\acute{e}n\;Xiuyu\acute{a}n$(陳修園) was a famous doctor and educator of the late Tang Dynasty. He was well known both for his books for beginners, and for his unique medical theories based on his profound research of <$Sh\bar{a}ngh\acute{a}nl\grave{u}n$(傷寒論)> and <$J\bar{i}nku\grave{i}y\grave{a}ol\ddot{u}e$>. He wrote <$Y\bar{i}xues\bar{a}nz\grave{i}j\bar{i}ng$(醫學三字經)> to establish the basic textbook for the beginners to set up right principles in pursuing their medical career. <$Y\bar{i}xues\bar{a}nz\grave{i}j\bar{i}ng$> was written in rhyme form, so that it can be easily memorized and used in future practices. There are quite many medical books in rhyme form, but this book is very unique as $Ch\acute{e}n\;Xiuyu\acute{a}n$ annotated his own notes, which is rare in this form of books. This feature makes <$Y\bar{i}xues\bar{a}nz\grave{i}j\bar{i}ng$> very outstanding, also with the fact that $Ch\acute{e}n\;Xiuyu\acute{a}n$ was the one with profound understanding and original theories based on medical bibles such as <$N\grave{e}ij\bar{i}ng$(內經)> and <$Sh\bar{a}ngh\acute{a}nl\grave{u}n$(傷寒論)>. We have translated this precious educational material into korean, hoping that this work could be of any help to students of korean medicine. And while doing this work, we have found followings: <$Y\bar{i}xues\bar{a}nz\grave{i}j\bar{i}ng$> covers the entire fields of medicine from theoretical discussions to practical clinical information. Nevertheless, as this is written in rhyme form, there are few phrases that are not easily understood for the sake of rhyme. Beginners probably may have difficulties in reading this book. To make this difficulty alleviated, and to develop our own educational material, we need to study further on the notes that $Ch\acute{e}n\;Xiuyu\acute{a}n$ annotated himself.

Robust control by universal learning network

  • Ohbayashi, Masanao;Hirasawa, Kotaro;Murata, Junichi
    • 제어로봇시스템학회:학술대회논문집
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    • 1995.10a
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    • pp.123-126
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    • 1995
  • Characteristics of control system design using Universal Learning Network (U.L.N.) are that a system to be controlled and a controller are both constructed by U.L.N. and that the controller is best tuned through learning. U.L.N has the same generalization ability as N.N.. So the controller constructed by U.L.N. is able to control the system in a favorable way under the condition different from the condition of the control system in learning stage. But stability can not be realized sufficiently. In this paper, we propose a robust control method using U.L.N. and second order derivatives of U.L.N.. The proposed method can realize better performance and robustness than the commonly used Neural Network. Robust control considered here is defined as follows. Even though initial values of node outputs change from those in learning, the control system is able to reduce its influence to other node outputs and can control the system in a preferable way as in the case of no variation. In order to realize such robust control, a new term concerning the variation is added to a usual criterion function. And parameter variables are adjusted so as to minimize the above mentioned criterion function using the second order derivatives of criterion function with respect to the parameters. Finally it is shown that the controller constricted by the proposed method works in an effective way through a simulation study of a nonlinear crane system.

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A Study on the Structure Properties of Plasma Silicon Oxynitride Film (플라즈마 실리콘 OXYNITRIDE막의 구조적 특성에 관한 고찰)

  • 성영권;이철진;최복길
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.5
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    • pp.483-491
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    • 1992
  • Plasma silicon oxynitride film has been applied as a final passivation layer for semiconductor devices, because it has high resistance to humidity and prevents from alkali ion's penetration, and has low film stress. Structure properties of plasma silicon oxynitride film have been studied experimentally by the use of FT-IR, AES, stress gauge and ellipsometry. In this experiment,Si-N bonds increase as NS12TO/(NS12TO+NHS13T) gas ratio increases. Peaks of Si-N bond, Si-H bond and N-H bond were shifted to high wavenumber according to NS12TO/(NS12TO+NHS13T) gas ratio increase. Absorption peaks of Si-H bond were decreased by furnace anneal at 90$0^{\circ}C$. The atomic composition of film represents that oxygen atoms increase as NS12TO/(NS12TO+NHS13T) gas ratio increases, to the contrary, nitrogen atoms decrease.

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Hong Gil Ju(洪吉周)'s Algebra (홍길주(洪吉周)의 대수학(代數學))

  • Hong, Sung-Sa;Hong, Young-Hee
    • Journal for History of Mathematics
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    • v.21 no.4
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    • pp.1-10
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    • 2008
  • In this paper, we investigate the part dealing with algebra in Hong Gil Ju's GiHaSinSul to analyze his algebraic structure. The book consists of three parts. In the first part SangChuEokSan, he just renames Die jie hu zheng(疊借互徵) in Shu li jing yun to SangChuEokSan and adds a few examples. In the second part GaeBangMongGu, he obtains the following identities: $$n^2=n(n-1)+n=2S_{n-1}^1+S_n^0;\;n^3=n(n-1)(n+1)+n=6S_{n-1}^2+S_n^0$$; $$n^4=(n-1)n^2(n+1)+n(n-1)+n=12T_{n-1}^2+2S_{n-1}^1+S_n^0$$; $$n^5=2\sum_{k=1}^{n-1}5S_k^1(1+S_k^1)+S_n^0$$ where $S_n^0=n,\;S_n^{m+1}={\sum}_{k=1}^nS_k^m,\;T_n^1={\sum}_{k=1}^nk^2,\;and\;T_n^2={\sum}_{k=1}^nT_k^1$, and then applies these identities to find the nth roots $(2{\leq}n{\leq}5)$. Finally in JabSwoeSuCho, he introduces the quotient ring Z/(9) of the ring Z of integers to solve a system of congruence equations and also establishes a geometric procedure to obtain golden sections from a given one.

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Constant Time RMESH Algorithm for Linear Translation of Linear Quadtrees (선형 사진트리의 선형이동을 위한 상수시간 RMESH 알고리즘)

  • Kim, Kyung-Hoon;Woo, Jin-Woon
    • The KIPS Transactions:PartA
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    • v.10A no.3
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    • pp.207-214
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    • 2003
  • Quadtree, which is a hierarchical data structure, is a very important data structure to represent binary images. The linear quadtree representation as a way to store a quadtree is efficient to save space compared with other representations. Therefore, it has been widely studied to develop efficient algorithms to execute operations related with quadtrees. The linear translation is one of important operations in image processing, which moves the image by a given distance. In this paper, we present an algorithm to perform the linear translation of binary images represented by quadtrees, using three-dimensional $n{\times}n{\times}n$ processors on RMESH (Reconfigurable MESH). This algorithm has constant-time complexity by using efficient basic operations to route the locational codes of quardtree on the hierarchical structure of n${\times}$n${\times}$n RMESH.

DC and RF Characteristics of AlGaN/InGaN HEMTs Grown by Plasma-Assisted MBE (AlGaN/InGaN HEMTs의 고성능 초고주파 전류 특성)

  • 이종욱
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.8
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    • pp.752-758
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    • 2004
  • This paper reports on the DC and RF characteristics of AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beau epitaxy(MBE) on sapphire substrates. The devices with a 0.5 ${\mu}$m gate-length exhibited relatively flat transconductance(g$\_$m/), which results from the enhanced carrier confinement of the InGaN channel. The maximum drain current was 880 mA/mm with a peak g$\_$m/ of 156 mS/mm, an f$\_$T/ of 17.3 GHz, and an f$\_$MAX/ or 28.7 GHz. In addition to promising DC and RF results, pulsed I-V and current-switching measurements showed little dispersion in the unpassivated AlGaN/InGaN HEMTs. These results suggest that the addition of In to the GaN channel improves the electron transport characteristics as well as suppressing current collapse that is related to the surface trap states.

A Study of Properties of GaN and LED Grown using In-situ SiN Mask (In-situ SiN 박막을 이용하여 성장한 GaN 박막 및 LED 소자 특성 연구)

  • Kim, Deok-Kyu;Yoo, In-Sung;Park, Choon-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.10
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    • pp.945-949
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    • 2005
  • We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also fabricate PN junction light emitting diode (LED) to investigate the effect of the SiN mask on its optical property By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21{\times}10^9\;cm^{-2}$ to $9.7{\times}10^8\;cm^{-2}$. The output power of the LED with a SiN mask increased from 198 mcd to 392 mcd at 20 mA. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.