• Journal of the Optical Society of Korea
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• v.16 no.1
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• pp.1-5
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• 2012

This paper describes a 150-Mb/s monolithic optical receiver for plastic optical fiber link using a standard CMOS technology. The receiver integrates a photodiode using an N-well/P-substrate junction, a pre amplifier, a post amplifier, and an output driver. The size, PN-junction type, and the number of metal fingers of the photodiode are optimized to meet the link requirements. The N-well/P-substrate photodiode has a 200-${\mu}m$ by 200-${\mu}m$ optical window, 0.1-A/W responsivity, 7.6-pF junction capacitance and 113-MHz bandwidth. The monolithic receiver can successfully convert 150-Mb/s optical signal into digital data through up to 30-m plastic optical fiber link with -10.4 dBm of optical sensitivity. The receiver occupies 0.56-$mm^2$ area including electrostatic discharge protection diodes and bonding pads. To reduce unnecessary power consumption when the light is not over threshold or not modulating, a simple light detector and a signal detector are introduced. In active mode, the receiver core consumes 5.8-mA DC currents at 150-Mb/s data rate from a single 3.3 V supply, while consumes only $120{\mu}W$ in the sleep mode.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.4
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• pp.568-576
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• 2017

This paper presents a clock and data recovery circuit with an adaptive loop bandwidth calibration scheme and the idle power saved frequency acquisition. The loop bandwidth calibration adaptively controls injection currents of the main loop with a trimmable bandgap reference circuit and trains the VCO to operate in the linear frequency control range. For stand-by power reduction of the phase detector, a clock gating circuit blocks 8-phase clock signals from the VCO and cuts off the current paths of current mode D-flip flops and latches during the frequency acquisition. 77.96% reduction has been accomplished in idle power consumption of the phase detector. In the jitter experiment, the proposed scheme reduces the jitter tolerance variation from 0.45-UI to 0.2-UI at 1-MHz as compared with the conventional circuit.

• Journal of IKEEE
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• v.18 no.1
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• pp.37-44
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• 2014

In this paper we present an LDO based on an error amplifier. The designed error amplifier has a gain of 89.93dB at low frequencies. This amplifier's Bandwidth is 50.8MHz and its phase margin is $59.2^{\circ}C$. Also we proposed a BGR. This BGR has a low output variation with temperature and its PSRR at 1 KHz is -71.5dB. For a temperature variation from $-40^{\circ}C$ to $125^{\circ}C$ we have just 9.4mV variation in 3.3V LDO output. Also it is stable for a wide range of output load currents [0-200mA] and a $1{\mu}F$ output capacitor and its line regulation and especially load regulation is very small comparing other papers. The PSRR of proposed LDO is -61.16dB at 1 KHz. Also we designed it for several output voltages by using a ladder of resistors, transmission gates and a decoder. Low power consumption is the other superiority of this LDO which is just 1.55mW in full load. The circuit was designed in $0.35{\mu}m$ CMOS process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.400-403
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• 2004

The dielectric properties of $BaTiO_3/SrTiO_3$ multilayered thick films with printing times were investigated. $BaTiO_3/SrTiO_3$ thick films were deposited by Screen-printing method on alumina substrates. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode(Pt) for 2hours. The structural and the dielectric properties were investigated for various printing times. The BST phase appeared in all of the $BaTiO_3/SrTiO_3$ mutilayered thick films. The $BaTiO_3/SrTiO_3$ multilayered thick film thickness, obtained by one printings, was $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ multilayered thick film, obtained by five printings, were about 266, 0.8% at 1Mhz, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.276-276
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• 2008

Transparent and conducting indium tin oxide (ITO) and ITO/Nickel/ITO(INI) multilayered films were prepared on glass substrates by a magnetron sputtering without intentional substrate heating. The RF(13.56MHz) and DC power were applied to ITO and Nickel target, respectively. The thickness of ITO, Ni and ITO films were kept constantly at 50, 5 and 45 nm. In order to consider the effect of post deposition vacuum annealing in vacuum on the physical and optoeletrical properties of INI films, optical transmittance, electrical resistivity, crystallinity of the films were analyzed. From the observed result, it may conclude that the optoelectrical properties of the INI films were dependent on the post deposition annealing. For the INI films annealed at $300^{\circ}C$, the films have a polycrystalline structure with (110), (200), (210), (211) and (300). The resistivity of the films were $4.0\times10^{-4}{\Omega}cm$ at room temperature. As the annealing($300^{\circ}C$), resistivity decreased to $2.8\times10^{-4}{\Omega}cm$. And also the optical transmittance decreased from 79 to 70 % at 550nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.576-581
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• 2005

We fabricated red organic light emitting diodes(OLEDs) utilizing tis(8-hydroxyquinoline) aluminum $(Alq_3)$ doped with $5\%$ of (4-(dicyanomethylene)-2-i-propyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran) (DCJTI) and investigated the driving and modulation characteristics for applying to the electro-optical conversion device. To improve the driving characteristics of red OLEDs, 3 V of offset voltage, which is equal to the turn on voltage, Is applied to the device. Offset voltage enhanced the optical EL output and reduced the rise time of EL waveforms of red OLEDs, and hence the cutoff frequency is increased with increasing applied voltage. The optical pulse of 100 MHz has been obtained from red OLEDs. Therefore, we confirmed that the red OLEDs can be applied to the fields of optical communication as an electro-optical conversion device.

• Journal of Sensor Science and Technology
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• v.16 no.5
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• pp.377-383
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• 2007

We describe the fabrication and characterization of a doubly clamped multi-walled carbon nanotube (MWNT). The device was assembled by an application of electric field in solution. The MWNT was clamped on end of metal trench electrodes in solution and deposited with additional platinum (Pt) on edge of electrode for firmly suspending the MWNT by focused ion beam (FIB). The MWNTs range of diameter and length were 100 to 150 nm and 1.5 to $2{\mu}m$, respectively. Electrical characteristics of fabricated devices were measured by I-V curve and impedance analysis. The mechanical deformation was observed by resistivity in high air pressure. Resonant frequency around 6.8 MHz was detected and resistivity was linearly varied according to the magnitude of air pressure. This device could have potential applications in nanoelectronics and various sensors.

• Journal of the Korean Wood Science and Technology
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• v.26 no.3
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• pp.1-8
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• 1998

Western redcedar timber, 26 by 26cm in cross section and by 200cm long, was dried in a laboratory radio-frequency/vacuum kiln under 65torr of ambient pressure and a fixed frequency of 6.78MHz for the potential rapidly dry large timber. All process data were collected and saved in a computer through a data acquisition system. The temperature in the middle of timber was higher than temperature at the quarter point of timber length and thickness. Temperature gradients developed in the longitudinal and transverse direction of timber. The pressure in the middle of timber was higher than pressure at the quarter point of timber length. The pressure in the middle of timber was lower in the early stage of drying, and higher in the latter stage of drying than pressure at the quarter point of timber thickness. Power density was very highest during heating period and then gradually decreased. The drying curve was approximately linear and the total drying time was 27 hours from an initial moisture content(MC) of 48.6 percent to a final Me of 19.2 percent with only a few mild internal checks in the middle location of timber.

• The Bulletin of The Korean Astronomical Society
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• v.36 no.2
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• pp.110.1-110.1
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• 2011

오리온 A 분자운은 별탄생이 활발하게 일어나는 영역이다. 때문에 분자운 연구를 통해서 별탄생을 연구하기에는 최적의 곳이다. 특기할 것은 Orion A에는 필라멘트 구조가 있다는 점이다. 필라멘트는 전형적으로는 길이 4.8pc, 너비 1.4 pc 로 제시되었다(Nagahama et al. 1998). 많은 미지의 조건들 가운데 필라멘트 구조는 별탄생에 대한 새로운 조명을 던져주는 데, 가령 분자운이 수축, 분열하며 작은 덩어리를 만드는 과정에 이런 기다란 구조가 별탄생에 어떤 과정에서 나타나며 이것이 별탄생이 어떤 효과를 발생하는지 연구되어야 하는 문제들이다. 대덕전파안테나의 1분의 분해능(Channel resolution 63 KHz/ Band Width 25 MHz) 의 12CO, 13CO(J=1-0) 분자선 관측으로 필라멘트를 이전 연구보다 자세하게 관측하여 이것 안에 있을 것으로 보이는 substructure들 연구하고자 한다. 관측영역은 적경: 5h 32m ~ 5h 37m, 적위: $-5^{\circ}$ 14' ~ $-5^{\circ}$ 37'으로 ($1^{\circ}{\times}1^{\circ}$) 영역을 관측하였다. 그 결과 필라멘트구조를 확인할 수 있었으며 약 0.7pc,약 $1000\;M_{\odot}$의 덩어리들이 이전관측에서 보여진 X자형태가 아니라 일자형태로 분포되어있는 것을 알 수 있었다. 관측된 최소덩어리는 star cluster mass이고 stellar size 의 덩어리는 별탄생 과정 이후 소멸된 것으로 보인다. 관측으로 확인된 덩어리들의 물리적인 성질과 분포를 깊이 연구해 보고자 한다. 향후 Orion A 전체를 추가로 관측하고자 한다.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.475-483
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• 2007

This paper proposes a readout integrated circuit (ROIC) for $32{\times}32$ infrared focal plane array (IRFPA) detector, which consist of reference resistor, detector resistor, reset switch, integrated capacitor and operational amplifier. Proposed ROIC is designed using $0.35{\;}{\mu}m$ 2P-4M (double poly four metal) n-well CMOS process parameters. Low noise folded cascode operational amplifier which is a key element in the ROIC showed 12.8 MHz unity-gain bandwidth and open-gain 89 dB, phase margin $67^{\circ}$, SNR 82 dB. From proposed circuit, we gained output voltage variation ${\Delta}17{\};mV/^{\circ}C$ when the detector resistor varied according to the temperature.