• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.851-854
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• 2004

By approaching the counter electrode to the CNT emitter, remarkable reduction of the cathode operating voltage has been accomplished in the under-gate CNT cathode structure. The peak emission current density of 2.5 ms/$cm^2$, which is sufficient for high brightness CNT field emission display, was obtained at the cathode-to-gate voltage of 57 V when the CNT-to-counter electrode gap was 2.2 ${\mu}m$. The gate current was less than 10 % of the anode current. The CNT cathode with low driving voltage can help the cost-effective field emission display implemented.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.43-48
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• 2004

Electromigration of Sn-3.5Ag-0.5Cu solder bumps was investigated with current densities of $3{\~}4{\times}10^4 A/cm^2$ at temperatures of $130{\~}160^{\circ}C$ using flip chip specimens which consisted of upper Si chip and lower Si substrate. Electromigration failure of the Sn-3.5Ag-0.5Cu solder bump occurred with complete consumption of Cu UBM and void formation at cathode side of the solder bump. The activation energies for electromigration of the Sn-3.5Ag-0.5Cu solder bump were measured as 0.61 eV at current density of $3{\times}10^4 A/cm^2$, 0.63 eV at $3.5{\times}10^4 A/cm^2$, and 0.77 eV at $4{\times}10^4 A/cm^2$, respectively.

• Journal of the Korean Electrochemical Society
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• v.16 no.3
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• pp.151-156
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• 2013

As the cathode material for li-ion battery, $LiNi_{0.5}Mn_{0.3}Co_{0.2}O_2$ were synthesized by supercritical hydrothermal method and calcined $850^{\circ}C$ and $900^{\circ}C$ for 10hrs in air. The effect of temperature in the heat treatment on the powder and its performance were studied of xray diffraction pattern, SEM-image, physical properties and electrochemical behaviors. As a result, calcined at $900^{\circ}C$ material particle size more increase than calcined at $850^{\circ}C$ material, especially shows excellent electrochemical performance with initial reversible specific capacity of 163.84 mAh/g (0.1C/2.0-4.3V), 186.87 mAh/g (0.1C/2.0-4.5V) and good capacity retention of 91.49% (0.2C/2.0-4.3V) and 90.36% (0.2C/2.0-4.5V) after 50th charge/discharge cycle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.1-5
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• 2000

As the semiconductor devices are miniaturized, the number of the unit cleaning processes increases. In order to processes by conventional RCA cleaning process, the consumption of volume of liquid chemical and DI water became huge. Therefore, the problem of environmental issues are evolved by the increased consumption of chemicals. To resolve this matter, an advanced cleaning process by Electrolyzed Water was studied in this work. The electrolyzed water was made by an electrolysis equipment which was composed of three chambers of anode, cathode, and middle chambers. In the case of electrolyzed water with electrolytes in the middle chamber, oxidatively acidic water of anode and reductively alkaline water of cathode were obtained. The oxidation/reduction potentials and pH of anode water and cathode water were measured to be +l000mV and 4.8, and -530mV and 6.3, respectively. The Si-wafers contaminated with metallic impurities were cleaning with the electrolyzed water. To analysis the amounts of metallic impurities on Si-water surfaces, ICP-MS(Inductively Coupled Plasma-Mass spectrometer) was introduced. From results of ICP-MS measurements, it was concluded that the ability of electrolyzed water was equivalent to that of the conventional RCA cleaning.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.252-257
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• 1997

Organic EL devices, which have the sing3e-layer structure of ITO(indium-tin-oxide) /PPV(poly(p-phenylene vinylene))/cathode and the double-layer structure of ITO/PVK (poly(N- vinylcarbazole)) /PPV/cathode, were fabricated and their electro-optical properties were investigated. Experimental results, in single-layer structure, shown that the increment of temperature for thermal conversion of PPV film from $140^{\circ}C$ to $260^{\circ}C$ decreases the maximum luminance from $118.8\;cd/m^{2}$(20V) to $21.14\;cd/m^{2}$(28V) and shift the maximum peak of EL spectrum from 500nm to 580nm. The lower the work function of cathode is, the more the luminance and injection current of device. In double-layer structure, as the concentration of PVK solution decreases from 0.5 wt% to 0.05 wt%, the luminance of device increases from $70.71\;cd/m^{2}$(32V) to $152.7\;cd/m^{2}$(26V).

• Journal of the Korean Applied Science and Technology
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• v.29 no.4
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• pp.594-598
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• 2012

Polymer electrolyte membrane fuel cell(PEMFC) performance degrades seriously when sulfur dioxide and hydrogen sulfide are contaminated in the fuel gas at anode and air source at cathode, respectively. This paper reveals the effect of the combined sulfur impurity poisoning on both PEMFC cathode and anode parts through measuring electrical performance on single FC operated under 1 ppm to 10 ppm impurity gases. The severity of $SO_2$ and $H_2S$ poisoning depended on concentrations of impurity gases under optimum operating conditions($65^{\circ}C$ of cell temperature and 100 % relative humidity). Sulfur adsorption occured on the surface of Pt catalyst layer on MEA. In addition, MEA poisoning by impurity gases were cumulative. After four consecutive poisonings with 1, 3, 5 to 10 ppm, the fuel cell performance of PEMFC was decrease upto 0.54 V(76 %) from 0.71 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.267-270
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10$\mu\textrm{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sifted conventional LTIGBT and the conventional LTIGBT which has the width of 17$\mu\textrm{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17$\mu\textrm{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field in the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.15-18
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10 ${\mu}{\textrm}{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sized conventional LTIGBT arid the conventional LTIGBT which has the width of 17 ${\mu}{\textrm}{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17 ${\mu}{\textrm}{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field In the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• Journal of Environmental Science International
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• v.13 no.2
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• pp.149-159
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• 2004

In the removal of heavy metals from the mine deposit using electrokinetic processes, the effects of operation under both constant current and constant potential conditions were estimated. The results of soil pH distributions for DDW-20 V and DDW-100 mA cases after the electrokinetic remediation tests were observed. In the former case, soil pH was not much changed and kept to almost constant value just little higher than initial soil pH of 3.52, except near the cathode, which was about pH 5. While in the latter case, soil pHs of anode and the cathode regions were less than pH 3 and about 6, respectively. The electroosmotic flow to the cathode increased rapidly till 10 hrs and decreased steadily and then maintained to constant rate until the end of operation at constant current condition. Electric potential gradient was continuously increased to as much as 34.375 V/cm. At the steady state, values of the apparent electric conductivity for DDW-20 V and DDW-100 mA were around 40 ${\mu}\textrm{s}$/cm and 30 ${\mu}\textrm{s}$/cm, respectively. In the DDW-100mA test, Cu, Cd, and Zn except Pb showed the tendency of moving toward the cathode. While in the DDW-20 V case, it was observed that Cu, Zn, and Pb except Cd were not moved to any directions. The results of the tests demonstrated that the electrokinetic soil remediation process could be operated better under constant current condition than constant electric potential condition.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1343-1346
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• 2005

Self assembled monolayers (SAM) are generally used at the anode/organic interface to enhance the carrier injection in organic light emitting devices, which improves the electroluminescence performance of organic devices. This paper reports the use of SAM of 1-decanethiol (H-S(CH2)9CH3) at the cathode/organic interface to enhance the electron injection process for organic light emitting devices. Aluminum (Al), tris-(8-hydroxyquionoline) aluminum (Alq3), N,N'-diphenyl-N,N'-bis(3 -methylphenyl)-1,1'- diphenyl-4,4'-diamine (TPD) and indium-tin-oxide (ITO) were used as bottom cathode, an emitting layer (EML), a hole-transporting layer (HTL) and a top anode, respectively. The results of the capacitancevoltage (C-V), current density -voltage (J-V) and brightness-voltage (B-V), luminance and quantum efficiency measurements show a considerable improvement of the device performance. The dipole moment associated with the SAM layer decreases the electron schottky barrier between the Al and the organic interface, which enhances the electron injection into the organic layer from Al cathode and a considerable improvement of the device performance is observed. The turn-on voltage of the fabricated device with SAM layer was reduced by 6V, the brightness of the device was increased by 5 times and the external quantum efficiency is increased by 0.051%.