• Title/Summary/Keyword: 40-GHz

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Design and Fabrication of 10W Feedforward Linear Power Amplifier adding Feedback Loop for IMT-2000 (궤한루프를 첨가한 IMT-2000용 10W급 Feedforward 선형 전력 증폭기의 설계 및 제작)

  • 류병하;장중호;김성민;최현철
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2000.11a
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    • pp.187-190
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    • 2000
  • In this paper, A Feedforward Linear Power Amplifier which is appended a feedback loop for IMT-2000 was designed and fabricated. Feedback loop was used to improve the IMD(Inter-Modulation Distortion) characteristics of the main amplifier. And it is easy to cancel IMD on the min path and control IMD cancellation loop, compared with basic Feedforward Linear Power Amplifier. This feedback loop has the same effect of the Predistroter. So, This power amplifier was improved in IMD characteristics to add the effect of Predistroter to basic Feedforward amplifier. And the disigned power amplifier in this paper represented the 40dBm(10W) output and -55dBc 3rd IMD at center frequency 2.14GHz (@10MHz).

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Accurate Non-Quasi-Static Gate-Source Impedance Model of RF MOSFETs

  • Lee, Hyun-Jun;Lee, Seonghearn
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.6
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    • pp.569-575
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    • 2013
  • An improved non-quasi-static gate-source impedance model including a parallel RC block for short-channel MOSFETs is developed to simulate RF MOSFET input characteristics accurately in the wide range of high frequency. The non-quasi-static model parameters are accurately determined using the physical input equivalent circuit. This improved model results in much better agreements between the measured and modelled input impedance than a simple one with a non-quasi-static resistance up to 40GHz, verifying its accuracy.

Microwave Dielectric Properties of Donor doped Zr0.8Sn0.2TiO4 Ceramics (Donor Dopant 첨가 Zr0.8Sn0.2TiO4 세라믹스의 마이크로파 유전특성)

  • 김윤호
    • Journal of the Microelectronics and Packaging Society
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    • v.2 no.2
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    • pp.31-40
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    • 1995
  • Donor dopant로 WO3, Ta2O5 및 Nb2O5를 첨가한 Zr0.8Sn0.2TiO4 세라믹스의 유전상수 $\varepsilon$r 품 질계수 Q 및 공진주파수의 온도계수 rf에 대하여 연구하였다. 139$0^{\circ}C$에서 32시간 소결시 donor dopant 첨가량에 따른 ZST의 유전상수는 소결밀도의 변화 거동과 잘 일치하였다. 5.5 GHz에서 측정 한 ZST의 품질계수 Q는 ~0.5 mol% WO3 Ta2O5 및 Nb2O5 첨가에 의해 6800에서 8500 정도로 증가 하였다. ZST의 $\tau$f는 0.3 mol%까지의 WO3 첨가량 증가에 따라 0 ppm/$^{\circ}C$에서 -4.6 ppm/$^{\circ}C$까지 음 의 값으로 직선적으로 감소하였으며 0.4 mol% 범위의 Ta2O5 및 Nb2O5 첨가에 의해 -7 ppm/$^{\circ}C$ 까지 직선적으로 감소하였다.

Diagnostic Technique of a Switchboard by Frequency Analysis of Radiated Electromagnetic Wave (방사전자파의 주파수분석에 의한 배전반 진단기술)

  • Park, Dae-Won;Kim, Sun-Jae;Jung, Kwang-Seok;Kil, Gyung-Suk;Jo, Eun-Je
    • Proceedings of the KSR Conference
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    • 2010.06a
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    • pp.41-45
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    • 2010
  • In this paper, we analyzed the frequency spectrum of radiated electromagnetic waves generated by series arc- and corona- discharges as a basic study to develop an online diagnostic technique for power facilities installed inside switchboards. To simulate corona and series arc discharges, an arc generator specified in UL1699 and a corona generator were fabricated. The experiment was carried out in an electromagnetic shielding room, and the measurement system consists of an Ultra Log Antenna and an EMI Test Receiver. The frequency spectrum exists in ranges from 30 to 500 [MHz] for series arc discharge and 30 [MHz] to 2 [GHz] depending on defects for corona discharge. The peak frequency of series arc discharge and corona were 40 [MHz], 80 [MHz] and 35 [MHz]~160 [MHz], respectively.

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Phase delay of X-band GB-SAR system affected by humidity change (습도변화에 따른 X-band GB-SAR 시스템의 위상지연)

  • Lee, Jae-Hee;Lee, Hoon-Yol;Cho, Seong-Jun;Sung, Nak-Hoon
    • Proceedings of the KSRS Conference
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    • 2009.03a
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    • pp.202-206
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    • 2009
  • 본 논문에서는 X-band GB-SAR 시스템을 이용하여 지상을 모니터링 하였으며, 대기 중의 습도와 거리의 영향을 받는 대기보정 상수를 산출하였다. 시스템에서 X-band 안테나는 중심주파수 9.65 GHz, 밴드 폭 600 MHz이며, 신호의 증폭과 다편파 측정 및 분석을 위해 각각 마이크로파 앰프와 마이크로파 스위치를 이용하였다. Azimuth step과 length는 5 cm와 5 m로 최대 관측 거리는 약 200 m 이다. phase 분석에 쓰인 산란체는 총 5개의 trihedral corner reflector로서, 시스템으로부터의 거리를 각각 다르게 설정하였다. 실험은 3일간 연속적으로 수행되었으며, 실험간 상대습도는 최소 50 %에서 최대 90 %까지로 약 40 %의 변화를 보였다. 고정된 상태의 reflector는 마치 이동한 것과 같은 현상을 보였는데 이는 마이크로화의 전파과정에서 발생하는 거리와 습도에 따른 지연효과라고 판단하였으며, 이를 배제하기 위하여 대기보정식을 산출하였다. 산출과정에서 temporal coherence가 0.98 이하인 reflector의 신호는 제외하였는데 이 경우 시스템 및 reflector의 안정성에 문제가 있다고 판단하였기 때문이다. 산출된 대기보정식은 C-band 안테나를 사용한 실험과 비교하여 보았다.

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High-temperature superconducting filter and filter subsystem for mobile telecommunication

  • Sakakibara, Nobuyoshi
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.35-39
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    • 2000
  • Large-area high-temperature superconducting (HTS) films, filter design and damage-free processing technique have been developed to fabricate low insertion loss and sharp skirt filters. Further, long life cryocooler, low temperature low noise amplifier (LNA) and cryocable have been developed to assemble HTS filter subsystem for IS-95 and IMT-2000 mobile telecommunication. The surface resistance of the films was about 0.2 milli-ohm at 70 K, 12 GHz. An 11-pole HTS filter for IS-95 telecommunication system and a 16-pole HTS filter for IMT-2000 telecommunication system were designed and fabricated using 60 {\times}$ 50 mm$^2$ and one half of 3-inch diameter YBCO films on a 0.5-mm-thick MgO substrate, respectively. We have assembled the filter and low temperature LNA in a dewar with the cryocooler. Ultra low-noise (noise figure: 0.5 dB at 70 K) and ultra sharp-skirt (40 dB/1.5 MHz) performance was presented by the IS-95 filter subsystem and the IMT-2000 filter subsystem, respectively.

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A Design and Implementation of High Power Amplifier for ISM-band (ISM 대역용 고출력 전력증폭기의 설계 몇 구현)

  • Choi, Seong-Keon;Park, Jun-Seok;Lee, Moon-Que;Cheon, Chang-Yul
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2003.11a
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    • pp.326-329
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    • 2003
  • In this paper, we designed and implemented a high power amplifier(HPA) to achieve the high Power Added Efficiency(PAE) over 40% at the 90W output power for the ISM-band(fo=2.45GHz). HPA presented in this paper has 3-stage drive amplifier and 1-stage final amplifier. In the final amplifier, we utilized balanced amplifier configuration with GaAs FET and each of two amplifiers has the push-pull configuration to increase PAE. From the measurement results, we obtained PAE of 42.95% at the 90.57W output power.

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Design of Reflector Type Frequency Doubler for Undesired Harmonic Suppression Using Harmonic Load Pull Simulation Technique

  • Jang, Jae-Woong;Kim, Yong-Hoon
    • Journal of electromagnetic engineering and science
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    • v.7 no.4
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    • pp.175-182
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    • 2007
  • In this paper, a study on the reflector type frequency doubler, to suppress the undesired harmonics, is presented. A 12 to 24 GHz reflective frequency doubler is simulated and experimented. Design procedure of the frequency doubler with reflector is provided and the frequency doubler with good spectral purity is fabricated successfully. It has harmonic suppression of the $40{\sim}50\;dBc$ in the $1^{st}$ harmonic and the $50{\sim}60\;dB$ in the $3^{rd}$ harmonic with no additional filter. And, it has conversion gain with the input power of 0 dBm over bandwidth of 500 MHz. A NEC's ne71300(N) GaAs FET is used and the nonlinear model(EEFET3) using IC-CAP program is extracted for harmonic load pull simulation. Good agreement between simulated and measured results has been achieved.

RF-MEMS-Based DPDT Switch on Silicon Substrate for Ku-Band Space-Borne Applications

  • Singh, Harsimran;Malhotra, Jyoteesh
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.1
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    • pp.16-20
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    • 2017
  • A RF-MEMS (radio-frequency microelectromechanical-system) based DPDT (double pole double throw) switch for the Ku band has been designed and analyzed for this article. The switch topology is based on the FG-CPW (finite ground-coplanar waveguide) configuration of a microstrip-transmission line. An FEM-based multiphysics solver is used for the evaluation of the spring constant, stress distribution, and pull-in voltage regarding the requirements of the switch-beam unit. The electromagnetic performance of the switch is investigated for a $675{\mu}m$ thick silicon substrate. For the operational frequency of 14.5 GHz, an insertion loss better than -0.3 dB, a return loss better than -40 dB, and input/output- and output-port isolations better than -35 dB are achieved for the switching unit.

Feasibility study of low power active RFID system based on the ultrasonic frequency (초음파를 이용한 저전력 Active RFID시스템의 구현가능성에 관한 연구)

  • Yoon, Ki-Hun;Kwak, Chul-Hyun;Kim, Keon-Wook
    • Proceedings of the KIEE Conference
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    • 2007.04a
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    • pp.430-432
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    • 2007
  • This paper proposes the possibility of SonicID system which is the active RFID based on the ultrasonic spectrum instead of using radio frequency. For the feasibility study, various performance indexes are measured in terms of power consumption and signal path loss onto the frequencies of 40KHz, 433MHz, and 2.4GHz. In addition to the line of sight condition, realistic situations are considered for diverse deploying environments. The results of these analyses demonstrate that the SonicID holds the potential to meet the needs of future advanced RFID system in a scalable fashion.

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