• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.18 no.3 s.118
• /
• pp.305-314
• /
• 2007

In this paper, we suggested a CPW-fed UWB antenna with uni-planar sectoral structure. The area where radiation device face ground is designed to have the shape of tapered slot based on exponential function. We modified a rectangular bow-tie dipole structure antenna and thus formed a multi-resonant mode. From this, we expanded the impedance bandwidth and made a feature satisfying VSWR of less than 2 between $3.1\sim10.6GHz$. The test result showed that the return loss less than -10 dB was met in the full-band UWB system and maximum gain of $0.9\sim3.1dB$ was made with the half-power beamwidth of $40.1\sim89.9^{\circ}$ on XY plane(Theta, $Phi=90^{\circ}$) and the full band. By using CPW-fed structure with no ground on the back of the substrate, the suggested antenna is easy to design and its miniaturization is also possible.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.18 no.3 s.118
• /
• pp.341-350
• /
• 2007

In this paper, the derivation of protection ratio is newly proposed for the detailed planning of frequency coordination in microwave relay networks, and computed results for protection ratio of co-channel and adjacent channel are illustrated over the actual system and its frequency. It is shown that the suggested method based upon availability prediction can be expressed in terms of composite fade margin, interference-to-noise ratio(I/N), net filter discrimination, and system parameters. According to results, for 6.7 GHz, 60 km, 64-QAM, and I/N= -6 dB at BER $10^{-6}$, composite fade margin and co-channel protection ratio provide 25.5 and 50.7 dB, respectively. Also, net filter discrimination and adjacent channel protection ratio are obtained as 26.3 and 24.4 dB, respectively, at the first adjacent channel of 40 MHz. The proposed method provides some merits in computing protection ratio for microwave relay networks in view of an easy extension and practical applications considering more detailed and various system parameters.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.1
• /
• pp.20-26
• /
• 2016

This paper presents an X-band two-stage power amplifier using GaN-HEMT. Two-stage structure was adopted to take its high gain and simple inter-stage matching network. Based on a 3D EM simulation, the bond-wire inductance and the parasitic capacitance were predicted. By reducing bond-wire inductance, Q of the matching network is decreased and the bandwidth is improved. The implemented two-stage PA shows a power gain of more than 16 dB, saturated output power of more than 42.5 dBm, and a efficiency of more than 35 % in frequency range of 8.1~8.5 GHz with an operating voltage of 40 V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.2
• /
• pp.162-172
• /
• 2011

In this paper, a design and fabrication of 4 W power amplifier for the WiMAX frequency band(2.3~2.7 GHz) are presented. The adopted active device is a commercially available GaN HEMT chip of Triquint Company, which is recently released. The optimum input and output impedances are extracted for power amplifier design using a specially self-designed tuning jig. Using the adopted impedances value, class-F power amplifier was designed based on EM simulation. For integration and matching in the small package module, spiral inductors and interdigital capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 50 % and harmonic suppression above 40 dBc for second(2nd) and third(3rd) harmonic at the output power of 36 dBm.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.40 no.10
• /
• pp.1879-1888
• /
• 2015

This paper evaluates the adjacent channel coexistence issues between LAA(License Assisted Access) system and other system (e.g. Wi-Fi) system in 5 GHz unlicensed spectrum. LAA is a technology to achieve enhanced data rate by aggregating licensed and unlicensed spectrum using CA(Carrier Aggregation). The coexistence study is essential before deploying LTE in unlicensed spectrum to verify the impact of LTE on the existing system such as Wi-Fi including system in throughput and regulatory aspects. This paper evaluates and analyzes the RF requirements of LTE system using interference analysis of coexistence study when operating at adjacent frequency channel of the Wi-Fi system in order to minimize the impact of LTE system into Wi-Fi system.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.40 no.5
• /
• pp.871-885
• /
• 2015

The improved DFSA for 2.4GHz multi-tags active RFID is suggested in 2 different ways: 1) simplified tag collection and Ack procedure using query command and 2) modified Schoute's method to control the number of slots in the frame. To evaluate the performance of the improved system we develop the simulation model. Varying the number of tags in the system we track the performance measures such as throughput, recognition time for multi-tags and tag recognition rate during a given time. The suggested method shows the best performance over all measures. Simplification of collection and Ack commands using query commands contributes to reducing tag recognition time. And the modified Schoute's method which controls the frame size using $k_1$ and $k_2$ contributes to throughput improvement and reduces target cognition time by reducing the number of collection rounds.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.40 no.1
• /
• pp.9-15
• /
• 2015

A CMOS band-pass delta-sigma modulator(BPDSM) and cascode class-E power amplifier have been developed CMOS for Class-S power amplifier applications. The BPDSM is operating at 1-GHz sampling frequency, which converts a 250-MHz sinusoidal signal to a pulse-width modulated digital signal without the quantization noise. The BPDSM shows a 25-dB SQNR(Signal to Quantization Noise Ratio) and consumes a power of 24 mW at an 1.2-V supply voltage. The class-E power amplifier exhibits an 18.1 dBm of the maximum output power with a 25% drain efficiency at a 3.3-V supply voltage. The BPDSM and class-E PA were fabricated in the Dongbu's 110-nm CMOS process.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.41 no.1
• /
• pp.51-57
• /
• 2016

This paper describes the physical layer modem structure of Giga KOREA 5G system which is being developed by ETRI as a 5G telecommunications prototype. The objective of Giga KOREA 5G system is supporting maximum 100 Gbps data rate for each cell with wide-bandwidth baseband station and mobile station prototypes in mmWave (10~40 GHz) environment. To achieve this objective, its physical layer is composed of high performance baseband station as well as mobile station and their OFDM TDD modems. The important features of Giga KOREA 5G physical layer are carrier aggregation, multiple receiving beam searching in mobile station, high data rate channel encoder and decoder and high speed modulation and demodulation functions.

• Journal of Advanced Navigation Technology
• /
• v.17 no.6
• /
• pp.720-725
• /
• 2013

This paper has presented that fringing-electric fields enhanced by a finger-type electrode can improve the tunability of the tunable capacitor. Its top electrodes with different area and line width are designed in types of the finger for a long conducting perimeter. The tunable varactors were fabricated on a quartz substrate employing a multi-layer dielectric of a para/ferro/para-electric thin film. Compared to the conventional capacitor, finger-type capacitors are analyzed in terms of effective capacitance and tunablility. Their effective capacitance and tunability of the varactors with the long perimeter increase 24~40 % and 7~12 %, respectively, due to enhanced fringing electric fields from 1 to 2.5 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.30 no.1
• /
• pp.8-11
• /
• 2019

In this paper, a Ku-band 50-W internally-matched power amplifier is designed and fabricated using a CGHV1J070D GaN HEMT from Wolfspeed. To obtain the same magnitudes and phases for the output signals of the unit transistor cells, which constitute a power transistor, a slit pattern and an asymmetric T-junction are used in the input and output matching circuits. The internally-matched power amplifier is fabricated on two different thin-film substrates with relative dielectric constants of 40 and 9.8, respectively, and is measured under pulsed conditions with a pulse period of $330{\mu}s$ and a duty cycle of 6%. The measured results show a maximum output power of 50~73 W, a drain efficiency of 35.4~46.4%, and a power gain of 4.5~6.5 dB from 16.2 to 16.8 GHz.