• Title/Summary/Keyword: 40-GHz

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집 대수 주기형 광대역 마이크로스트립 안테나 설계

  • 이문수;이상설
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.20 no.3
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    • pp.40-44
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    • 1983
  • A wide band quasi-log periodic microstrip antenna is designed using circular-disc microstrip patches as a basic radiator. The radiating elements are series-fed by a coplanar feeding network which consists of an open circuited feed line with a branch line connected to each radiating element. Experiment results show that the values of VSWR are less than 2.3 over the range of 2.72-3.43 GHz.

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The design of series-fed microstrip array antenna using subarray at Q band (서브 어레이를 이용한 Q 대역 직렬 급전 마이크로스트립 배열 안테나의 설계)

  • Heo, Johns;Oh, Soon-Soo;Sung, Young-Jae;Kim, Young-Sik
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2003.11a
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    • pp.413-417
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    • 2003
  • In this paper, a series-fed microstrip array antenna utilized a sub-array with a waveguide slot feeding is presented. This sub-array can reduce the feed loss compared with a full microstrip feed network. The sub-array has been designed both for a broad reflection bandwidth and a flat gain bandwidth from 40.5 GHz to 43.5 GHz. The $24{\times}24$ array antenna has been implemented with the maximum gain of 32.4 dBi.

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Development of RSFQ Logic Circuits and Delay Time Considerations in Circuit Design (RSFQ 논리회로의 개발과 회로설계에 대한 지연시간 고려)

  • Kang, J.H.;Kim, J.Y.
    • Progress in Superconductivity
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    • v.9 no.2
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    • pp.157-161
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    • 2008
  • Due to high speed operations and ultra low power consumptions RSFQ logic circuit is a very good candidate for future electronic device. The focus of the RSFQ circuit development has been on the advancement of analog-to-digital converters and microprocessors. Recent works on RSFQ ALU development showed the successful operation of an 1-bit block of ALU at 40 GHz. Recently, the study of an RSFQ analog-to-digital converter has been extended to the development of a single chip RF digital receiver. Compared to the voltage logic circuits, RSFQ circuits operate based on the pulse logic. This naturally leads the circuit structure of RSFQ circuit to be pipelined. Delay time on each pipelined stage determines the ultimate operating speed of the circuit. In simulations, a two junction Josephson transmission line's delay time was about 10 ps, a splitter's 14.5 ps, a switch's 13 ps, a half adder's 67 ps. Optimization of the 4-bit ALU circuit has been made with delay time consideration to operate comfortably at 10 GHz or above.

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See-saw Type RF MEMS Switch with Narrow Gap Vertical Comb

  • Kang, Sung-Chan;Moon, Sung-Soo;Kim, Hyeon-Cheol;Chun, Kuk-Jin
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.7 no.3
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    • pp.177-182
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    • 2007
  • This paper presents the see-saw type RF MEMS switch based on a single crystalline silicon structure with narrow gap vertical comb. Low actuation voltage and high isolation are key features to be solved in electrostatic RF MEMS switch design. Since these parameters in conventional parallel plate RF MEMS switch designs are in trade-off relationship, both requirements cannot be met simultaneously. In the vertical comb design, however, the actuation voltage is independent of the vertical separation distance between the contact electrodes. Therefore, the large separation gap between contact electrodes is implemented to achieve high isolation. We have designed and fabricated RF MEMS switch which has 46dB isolation at 5GHz, 0.9dB insertion loss at 5GHz and 40V actuation voltage.

Design and fabrication of a Small Microstrip Antenna (소형 마이크로스트립 안테나 설계 및 제작)

  • 곽원일;박수봉;김재이;고영혁
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2001.10a
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    • pp.246-249
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    • 2001
  • 본 논문에서는 기존의 QMSA에 비해 안테나 전체 길이를 소형화함은 물론 전기력선이 미치는 범위가 제한받지 않도록 그라운드 판을 접어올린 좌측 평행 평판과 방사 패치사이 용량을 장하하고 급전점의 위치를 조절하여 더욱 소형화할 수 있는 용량을 장하한 QMSA를 제안하고 설계ㆍ제작했다. 설계ㆍ제작된 용량을 장하한 QMSA는 중심 주파수를 2.0GHz하고 급전점을 변화시켜서 안테나 전체 길이를 40mm에서 37mm로 소형화하였다. 또한, 급전점을 변화시켜서 용량을 장하한 QMSA의 방사 패치 길이가 17mm(equation omitted g/4)의 2배인 35.1(equation omitted g/2)로 제작된 용량을 장하한 변형된 MSA는 공진주파수가 2.16GHz로 용량을 장하한 QMSA에 비해 소형화할 수는 없으나 대역폭이 9.20 %로 매우 넓음을 보였다. 그리고 상용화된 HFSS에 의해서 QMSA, 용량을 장하한 QMSA, 변형된 MSA, 용량을 장하한 변형된 MSA등의 방사 특성과 리턴로스 특성 분석은 용량을 장하하는 안테나가 이득은 낮지만 공진 주파수가 낮아서 소형화할 수 있음을 보였다.

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IEEE 802.15.3c WPAN 표준화 기술 동향

  • Lee, U-Yong;Kim, Gyeong-Pyo;Kim, Yong-Seon;Kim, Jin-Gyeong;Gwon, Hyeong-Jin
    • Information and Communications Magazine
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    • v.24 no.8
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    • pp.40-52
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    • 2007
  • 본고에서는 비/저활용(57-66GHz) 대역에 대한 새로운 주파수 자원을 개척하여 HDTV급 신호를 케이블 및 위성방송 셋톱박스, 게임콘솔, DVD플레이어, 캠코더 및 이동식 멀티미디어 장비와 무선으로 연결시키는 전송 기술 개발을 위하여 Intel, Philips, Motorola, IBM, SiBeam, Panasonic, Sony등 세계적인 기업들이 국제 표준화(IEEE802.15, ETSI/BRAN, ECMA International) 공동 협력 및 기술 개발 경쟁을 벌이고 있는 상황이다. 본 표준기술은 국내 기업이 세계 시장을 장악하고 있는 LCD, PDP 및 차세대 DVD플레이어 등에 적용될 Wireless HD-SDI(High Definition Serial Data Interface)/ DVI(Digital Visual Interface)와, 외장 하드 디스크, 메모리 등 외부 기억 장치와의 자원 공유에 사용될 Muti-Gbps급 Wireless LAN, Wireless PAN, Wireless SAN(System Area Network) 등에 적용될 무선 전송 기술이다. 비/저활용 $59{\sim}66GHz$ 대역에 대한 국제 표준화로 IEEE802.15.3c를 중심으로 활발히 일어나고 있는 표준기술과 표준화 동향을 살펴본다.

A study on Surppressed Method for the Frequency Interference within Wireless Communications Devices (무선통신기기들간의 주파수간섭 억제방안에 관한 연구)

  • Kang, Jeong-Yong;Kim, Hwan-Yong
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.28 no.1A
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    • pp.34-40
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    • 2003
  • Because that the wireless LAN and the Bluetooth which are currently used are operating at the ISM 2.4GHz, we must meet the frequency interference So performance degradation is occurred by frequency interference between the wireless LAN and the Bluetooth In this paper, for decreasing the errors between the communication systems because of the interferences, we analysis the influence of mutual interference between the local communication systems and the specification of frequency interference problem on the Bluetooth, the wireless LAN and home electronic products

Design Aspects of a New Reliable Torsional Switch with Excellent RF Response

  • Gogna, Rahul;Jha, Mayuri;Gaba, Gurjot Singh;Singh, Paramdeep
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.1
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    • pp.7-12
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    • 2016
  • This paper proposes a metal contact RF MEMS switch which utilizes a see-saw mechanism to acquire a switching action. The switch was built on a quartz substrate and involves vertical deflection of the beam under an applied actuation voltage of 5.46 volts over a signal line. The see-saw mechanism relieves much of the operation voltage required to actuate the switch. The switch has a stiff beam eliminating any stray mechanical forces. The switch has an excellent isolation of −90.9 dB (compared to − 58 dB in conventional designs ), the insertion of −0.2 dB, and a wide bandwidth of 88 GHz (compared to 40 GHz in conventional design ) making the switch suitable for wide band applications.

Design of the Clock Recovery Circuit for a 40 Gb/s Optical Receiver (40 Gb/s 광통신 수신기용 클락 복원 회로 설계)

  • Park, Chan-Ho;Woo, Dong-Sik;Kim, Kang-Wook
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2003.11a
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    • pp.136-139
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    • 2003
  • A clock recovery circuit for a 40 Gb/s optical receiver has been designed and implemented. The clock recovery circuit consists of signal amplifiers, a nonlinear circuit with diodes, and a bandpass filter Before implementing the 40 Gb/s clock recovery circuit, a 10 Gb/s clock recovery circuit has been successfully implemented and tested. With the 40 Gb/s clock recovery circuit, when a 40 Gb/s NRZ signal of -10 dBm was applied to the input of the circuit, the 40 GHz clock was recovered with the -20 dBm output power after passing through the nonlinear circuit. The output signal from the nonlinear circuit passes through a narrow-band filter, and then amplified. The implemented clock recovery circuit is planned to be used for the input of a phase locked loop to further stabilize the recovered clock signal and to reduce the clock jitter.

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Modification of CPW Pad Design for High fmax InGaAs/InAlAs Metamorphic High Electron Mobility Transistors (높은 $f_{max}$ 를 갖는 InGaAs/InAlAs MHEMT 의 Pad 설계)

  • Choi, Seok-Gyu;Lee, Bok-Hyung;Lee, Mun-Kyo;Kim, Sam-Dong;Rhee, Jin-Koo
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.599-602
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    • 2005
  • In this paper, we have performed a study that modifies the CPW Pad configurations to improve an $f_{max}$ characteristic of metamorphic HEMT. To analyze the CPW Pad structures of MHEMT, we use the ADS momentum simulator developed by $Agilent^{TM}$. Comparing the employed structure (G/W = 40/100 m), the optimized structure (G/W = 20/25 m) of CPW MHEMT shows the increased $S_{21}$ by 2.5 dB, which is one of the dominant parameters influencing the $f_{max}$ of MHEMT. To compare the performances of optimized MHEMT with the employed MHEMT, DC and RF characteristics of the fabricated MHEMT were measured. In the case of optimized CPW MHEMT, the measured saturated drain current density and transconductance $(g_m)$ were 693 mA/mm and 647 mS/mm, respectively. RF measurements were performed in a frequency range of $0.1{\sim}110$ GHz. A high $S_{21}$ gain of 5.5 dB is shown at a millimeter-wave frequency of 110 GHz. Two kinds of RF gains, $h_{21}$ and maximum available gain (MAG), versus the frequency, and a cut-off frequency ($f_t$) of ${\sim}154$ GHz and a maximum frequency of oscillation ($f_{max}$) of ${\sim}358$ GHz are obtained, respectively, from the extrapolation of the RF gains for a device biased at a peak transconductance. An optimized CPW MHEMT structure is one of the first reports among fabricated 0.1 m gate length MHEMTs.

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