• Korean Journal of Metals and Materials
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• v.48 no.3
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• pp.268-275
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• 2010

A new approach is described for preparing AlN thin films containing various amounts of Co content by using a two-facing targets type sputtering (TFTS) system. The deposited films were annealed isothermally at different temperatures and their microstructure, magnetic properties and resistivity were investigated. A small saturation magnetization ($4{\pi}Ms=0.52{\sim}0.85kG$) was observed irrespective of Co content in the asdeposited films. It was found that annealing conditions can control physical properties as well as the microstructure of the films. A high saturation magnetization (3.7 kG) and resistivity of $2200{\mu}{\Omega}-cm$ was obtained for AlN films containing 25 at.% Co.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.659-662
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• 1995

Co-ferrite ($CoO-Fe_{2}O_{3}$) thin films have been prepared by two ways of low temperature solid reaction including oxidation process, being based on $Co-layer/{\alpha}-Fe_{2}O_{3}$ films and $Co-layer/Fe_{3}O_{4}$ films. Magnetic properties of both Co-ferrite films have been measured and compared. The samples from $Co-layer/Fe_{3}O_{4}$ films have a large coercive force in the direction perpendicular and have a great poler kerr rotation angle at wavelength 700 nm than ones from $Co-layer/{\alpha}-Fe_{2}O_{3}$ films. The typical magnetic properties are as follows; saturation magnetization $4{\pi}Ms$, 2.9 kG; remnant magnetization $4{\pi}Mr$, 2.0 kG; coercive force Hc, 4.0 kOe; kerr rotation angle ${\PHI}k$, 0.39 deg($\lambda\;=\;700\;nm$); and initial magnetization energy E, $3.3\;{\times}\;10^6\;erg/\textrm{m}^3$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.30-33
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• 2001

This thesis deal with ferroelectric and ferrimagnetic materials, PZT/Ferrite ceramics. We conducted test of magnetical and electrical measurement. From this measurement, We obtained tunability and we can control characteristic impedance($Z_0$) from permeability($\mu$) and dielectric constant($\varepsilon$) for impedance matching in transmission line.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.30-33
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• 2001

This thesis deal with ferroelectric and ferrimagnetic materials, PZT/Ferrite ceramics. We conducted test of magnetical and electrical measurement. From this measurement, We obtained tunability and we can control characteristic impedance(Z$_{0}$) from permeability($\mu$) and dielectric constant($\varepsilon$) for impedance matching in transmission line.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.303-305
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• 2000

The effect of anisotropy field on the high frequency magnetic characteristics of FeTaN films was investigated. Those films show good magnetic properties : 4$\pi$Ms of 13KG, Hc of 0.6 Oe, effective permeability(${\mu}$') of 800 with a stable frequency response up to 800MHz. The films also show a large anisotropy field(Hk) over 21Oe. It result from the increased anisotropy of patterned FeTaN films. The combination of high saturation magnetization and relatively high Hk in these films is believed to the partly responsible for FeTaN for the excellent high-frequency behavior.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.888-892
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• 2004

It is necessary to develop soft magnetic layer with high saturation magnetization 4 $\pi{M}_s$ and in-plane magnetic anisotropy field Hk for soft magnetic underlayer of perpendicular magnetic recording media with high signal to noise ratio. Fe-Co-B layer with high 4 $\pi$Ms of about 23 kG deposited on Ni-Fe and Ni-Fe/Si seedlayer exhibited very high in-plane magnetic anisotropy filed Hk of about 280 and 380 Oe, respectively, In-plane XRD studies clarified that the lattice spacing of planes along the easy axis direction was longer than that along the hard axis direction in the Fe-Co-B layers with high Hk. These results indicate that high Hk of Fe-Co-B/Ni-Fe and Fe-Co-B/［Ni-Fe/si］ layers were resulted from magnetoelastic anisotropy owing to a residual stress. Moreover, the high Hk in the Fe-Co-B/Ni-Fe layer was maintained until 30$0^{\circ}C$ annealing temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.4
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• pp.153-158
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• 2003

This thesis deal with ferroelectric and ferromagnetic materials. PZT/Ferrite ceramics were made by the making process using PZT powder and garnet ferrite powder. PZT and ferrite are mixed as much 90%-10%, 50%-50%, and so on. After making samples, we are polishing samples until thickness is 0.1~0.2mm. We measured all kinds of samples in room temperature and applied magnetic field from -4500 to 4500 Oersted and conducted test of magnetical and electrical measurement using VSM and lpC resolution electrometer calibrated with RT66A pulsed tester. From this measurement, we can calculate tunability of these samples using C value obtained from P-E loop. As a result, it was able to measure magnetic characteristic when two matter had each other component ratio, and it was compound. However, it confirmed the possibility that was able to have ferroelectric characteristic with you in PZT 90% and ferrite 10%. Therefore, If this thing comes for PZT 50% and ferrite 50% have ferroelectric characteristic as him in a compound sample ore, can use this in an oscillator, supersonic waves detector in addition to a piezoelectric element. It may contribute to multipurpose of an element and demands such as a miniaturization of equipment, efficiency, reduce of a price which can use a characteristic of two components.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.315-317
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• 2000

A magnetoplumbite type of Ba ferrite(BaM) layers were deposited on Pt(111) and Pt(200) layers, and their c-axis orientation and magnetic characteristics were compared each other. The as-deposited BaM layer on Pt(111) one at the substrate temperature $T_s$ above $500^{\circ}C$ revealed remarkable c-axis orientation. The saturation magnetization 4$\piM_s$ and the perpendicular coercivity $H_{c⊥}$ of the films as-deposited at $T_s$ of $600^{\circ}C$ were 4.0kG and 2.5kOe, respectively. On the other hand, BaM ferrite layer deposited on Pt(200) layer at $T_s$ as relatively low as $500^{\circ}C$ also revealed weak c-axis orientation as well as (107) one and the films as-deposited at $T_s$ of $600^{\circ}C$ exhibited 4$\piMs_{and}$ $H_{c⊥}$ of 2.8kG and 2.5kOe, respectively. It was suggested that although chemical activity of Pt surface was effective for the formation of BaM crystallites, the lattice matching was also important for obtaining BaM layer with good c-axis orientation and large perpendicular anisotropy.sotropy.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.17-20
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• 2005

The influence of $O_2$ partial pressure on saturation mgnetization, coercivity, anisotropy field and effective permeability (over 1GHz) of as-deposited Co-Fe-Al-O thin films, which were fabricated by RF magnetron reactive sputtering method, were investigated. The $Co_{69.9}Fe_{20.5}A_{14.4O_{5.2}$ thin film fabricated at $O_2$ partial pressure of 4% exhibits the best magnetic softness with saturation magnetization 4${$pi}$Ms of 18.1 kG, coercivity of 0.82 Oe, anisotropy field ($H_k$) of Oe, and effective permeability (${\mu}_{eff}$) about 1,024 above 1 GHz. the electrical resistivity of Co-Fe-Al-O thin films were increased with increasing $O_2$ partial pressure, the electrical resistivity of $Co_{69.9}Fe_{20.5}A_{14.4O_{5.2}$ thin film with the best soft magnetic properties was 560.7 ${\mu}{\Omega}$am. Therefore, It is assumed that the good soft magnetic properties of $Co_{69.9}Fe_{20.5}A_{14.4O_{5.2}$ thin film results from high electrical resistivity and large anisotropy field.