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http://dx.doi.org/10.4283/JKMS.2005.15.1.017

Soft Magnetic Properties of CoFeAlO Thin Films for Ultrahigh Frequency Applications  

Kim, Hyeon-Bin (Department of Materials Science and Engineering, Chungnam National University)
Yun, Dae-Sik (Research Center for Advanced Magnetic Maaterials, Chungnam National University)
Ha, N.-D. (Department of Materials Science and Engineering, Chungnam National University)
Kim, Jong-O (Department of Materials Science and Engineering, Research Center for Advanced Magnetic Maaterials, Chungnam National University)
Abstract
The influence of $O_2$ partial pressure on saturation mgnetization, coercivity, anisotropy field and effective permeability (over 1GHz) of as-deposited Co-Fe-Al-O thin films, which were fabricated by RF magnetron reactive sputtering method, were investigated. The $Co_{69.9}Fe_{20.5}A_{14.4O_{5.2}$ thin film fabricated at $O_2$ partial pressure of 4% exhibits the best magnetic softness with saturation magnetization 4${$pi}$Ms of 18.1 kG, coercivity of 0.82 Oe, anisotropy field ($H_k$) of Oe, and effective permeability (${\mu}_{eff}$) about 1,024 above 1 GHz. the electrical resistivity of Co-Fe-Al-O thin films were increased with increasing $O_2$ partial pressure, the electrical resistivity of $Co_{69.9}Fe_{20.5}A_{14.4O_{5.2}$ thin film with the best soft magnetic properties was 560.7 ${\mu}{\Omega}$am. Therefore, It is assumed that the good soft magnetic properties of $Co_{69.9}Fe_{20.5}A_{14.4O_{5.2}$ thin film results from high electrical resistivity and large anisotropy field.
Keywords
Co-Fe-Al-O thin films; anisotropy field; electrical resistivity; soft magnetic film;
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1 J. Russat, G. Suran, H. Ouahmane, and M. Rivoire J. Appl. Phys. 73, 5592 (1993)   DOI   ScienceOn
2 J. M. Shin, Y. M. Kim, J. Kim, S. H. Han and H. J. Kim, J. Appl. Phys. 93, 6677 (2003)   DOI   ScienceOn
3 L. Landau and E. Lifshitz, Sov. Phys. J. 8, 153-169 (1935)
4 G. A. Grimes. Phys. Rev. B 43, 10780 (1991)   DOI   ScienceOn
5 S. Ohnuma, H. Fujimori, T. Masumoto, X. Y. Xiong, D. H. Ping and K. Hono, Appl. Phys. Lett. 82, 6 (2003)
6 B. K. Min, J. S. Song, H. S. Kim and S. J. Jeong, J. Appl. Phys. 91, 8456 (2002)   DOI   ScienceOn
7 L. H. Chen, T. K. Klemmer, K. A. Ellis, R. B. van Dover and S. Jin, J. Appl. Phys. 87, 5858 (2000)   DOI   ScienceOn
8 S. Ikeda, I. Tagawa, Y. Uehera, T. Kubomiya, J. Kane and A. Chikazawa, IEEE Trans. Magn. 38, 2219 (2002)   DOI   ScienceOn
9 J. Huijbregtse, F. Roozeboom, J. Sietsma, J. Donkers, T. Kuiper, E. van de Riet and D. Rie, J. Appl. Phys. 83, 1569 (1998)   DOI   ScienceOn