Korean Journal of Metals and Materials (대한금속재료학회지)

The Korean Institute of Metals and Materials (대한금속재료학회)
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Fabrication and Characterization of AlN films Containing Various Amounts of Co Content

  • Bae, Chang-Hwan (Dept. of Mechatronics Eng., Graduate School of M. T. & M., Hoseo University) ;
  • Han, Seung-Oh (Institute of Fusion Technology, Hoseo University) ;
  • Han, Cahng-Suk (Dept. of Defense Science & Technology, Hoseo University)
  • Received : 2009.10.29
  • Published : 2010.03.20
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Abstract

A new approach is described for preparing AlN thin films containing various amounts of Co content by using a two-facing targets type sputtering (TFTS) system. The deposited films were annealed isothermally at different temperatures and their microstructure, magnetic properties and resistivity were investigated. A small saturation magnetization ($4{\pi}Ms=0.52{\sim}0.85kG$) was observed irrespective of Co content in the asdeposited films. It was found that annealing conditions can control physical properties as well as the microstructure of the films. A high saturation magnetization (3.7 kG) and resistivity of $2200{\mu}{\Omega}-cm$ was obtained for AlN films containing 25 at.% Co.

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References

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