• 제목/요약/키워드: 3D Thermal Information

검색결과 167건 처리시간 0.036초

ULSI급 CMOS 소자 특성 분석을 위한 몬테 카를로 이온 주입 공정 시뮬레이션시의 효율적인 가상 이온 발생법 (Computationally Efficient ion-Splitting Method for Monte Carlo ion Implantation Simulation for the Analysis of ULSI CMOS Characteristics)

  • 손명식;이진구
    • 대한전자공학회논문지SD
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    • 제38권11호
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    • pp.771-780
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    • 2001
  • ULSI급 CMOS 소자를 개발, 제작하고 또한 그것의 전기적 특성을 정확히 분석하기 위해서는 공정 및 소자 시뮬레이터의 사용이 필수적이다. 대면적 몬테 카를로 시뮬레이션 결과가 다차원 소자 시뮬레이터의 입력으로 사용되려면 과도한 입자수의 증가로 비효율성을 띄게 된다. 본 논문에서는 이러한 문제를 해결하기 위해 3차원 몬테 카를로 이온 주입 시뮬레이터인 TRICSI 코드를 이용하여 물리적으로 타당하며 또한 효율적으로 시뮬레이션 입자 수를 증가시켜 대면적 이온 주입시의 3차원 통계 분포의 잡음 영역을 최소화하는 방법을 제안하였다. 후속 공정인 열확산 공정이나 RTA(급속 열처리) 공정의 확산 방정식을 푸는 경우 발산을 막기 위해 몬테 카를로 시뮬레이션 결과의 통계 분포에 대한 후처리 과정으로 3차원 셀을 이용한 보간 알고리듬을 적용하였다. 시뮬레이션 수행 결과 가상 궤적 발생법(split-trajectory method)만을 사용한 것에 비해 계산 시간은 2배로 늘이지 않는 범위에서 10배 이상의 이온 입자 생성 분포를 얻을 수 있다.

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중수소 이온 주입에 의한 MOS 커패시터의 게이트 산화막 절연 특성 개선 (Improvement of Gate Dielectric Characteristics in MOS Capacitor by Deuterium-ion Implantation Process)

  • 서영호;도승우;이용현;이재성
    • 한국전기전자재료학회논문지
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    • 제24권8호
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    • pp.609-615
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    • 2011
  • This paper is studied for the improvement of the characteristics of gate oxide with 3-nm-thick gate oxide by deuterium ion implantation methode. Deuterium ions were implanted to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas to nitrogen was performed to remove the damage of D-implantation. We simulated the deuterium ion implantation to find the optimum condition by SRIM (stopping and range of ions in matter) tool. We got the optimum condition by the results of simulation. We compare the electrical characteristics of the optimum condition with others terms. We also analyzed the electrical characteristics to change the annealing conditions after deuterium ion implantation. The results of the analysis, the breakdown time of the gate oxide was prolonged in the optimum condition. And a variety of annealing, we realized the dielectric property that annealing is good at longer time. However, the high temperature is bad because of thermal stress.

Preparation of Anatase TiO2 Thin Films with (OiPr)2Ti(CH3COCHCONEt2)2 Precursor by MOCVD

  • Bae, Byoung-Jae;Lee, Kwang-Yeol;Seo, Won-Seok;Miah, Md. Arzu;Kim, Keun-Chong;Park, Joon T.
    • Bulletin of the Korean Chemical Society
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    • 제25권11호
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    • pp.1661-1666
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    • 2004
  • The reaction of titanium tetraisopropoxide with 2 equiv of N,N-diethyl acetoacetamide affords Ti($O^iPr)_2(CH_3COCHCONEt_2)_2$ (1) as colorless crystals in 80% yield. Compound 1 is characterized by spectroscopic (Mass and $^1H/^{13}C$ NMR) and microanalytical data. Molecular structure of 1 has been determined by a single crystal X-ray diffraction study, which reveals that it is a monomeric, cis-diisopropoxide and contains a six coordinate Ti(IV) atom with a cis($CONEt_2$), trans($COCH_3$) configuration (1a) in a distorted octahedral environment. Variable-temperature $^1H$ NMR spectra of 1 indicate that it exists as an equilibrium mixture of cis, trans (1a) and cis, cis (1b) isomers in a 0.57 : 0.43 ratio at -20$^{\circ}C$ in toluene-$d_8$ solution. Thermal properties of 1 as a MOCVD precursor for titanium dioxide films have been evaluated by thermal gravimetric analysis and vapor pressure measurement. Thin films of pure anatase titanium dioxide (after annealing above 500$^{\circ}C$ under oxygen) have been grown on Si(100) with precursor 1 in the substrate temperature range of 350- 500$^{\circ}$ using a bubbler-based MOCVD method.

$LiNbO_3$ 강유전체 박막을 이용한 저전압용 MFS 디바이스의 특징 (Properties of Low Operating Voltage MFS Devices Using Ferroelectric $LiNbO_3$ Film)

  • 김광호;정순원;김채규
    • 전자공학회논문지D
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    • 제36D권11호
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    • pp.27-32
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    • 1999
  • 고온 열처리 시킨 $LiNbO_3/Si$(100) 구조를 이용한 MFS 디바이스를 제작하여 비휘발성 메모리 동작을 확인하였다. 제작한 트랜지스터의 선형영역에서 산출한 전계효과 이동도와 상호 컨덕턴스는 각각 약 $600cm^2/Vs$ 및 0.16mS/mm 이었다. 0.5V의 게이트 전압(즉, read 전압)에서 측정한 드레인 전류의 온/오프 비는 $10^4$배 이상이었다. 분극반전에 사용한 전압은 ${\pm}3V$ 이하로 매우 낮아 이는 저소비전력용 집적회로에 적용시키기에 기대가 된다. 세게 도핑시킨 반도체위에 제작한 MFS 커패시터는 500kHz의 바이폴라 전압펄스(peak-to-peak 6V, 50% duty cycle) 측정으로 $10^{10}$ cycle 까지도 분극의 열화현상이 없는 양호한 특성을 얻었다.

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Composite target으로 증착된 Mo-silicide의 형성 및 불순물의 거동 (Behavior of Implanted Dopants and Formation of Molybdenum Siliclde by Composite Sputtering)

  • 조현춘;백수현;최진석;황유상;김호석;김동원;심태언;정재경;이종길
    • 한국재료학회지
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    • 제2권5호
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    • pp.375-382
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    • 1992
  • Composite target(MoS$i_{2.3}$)으로 부터 Mo-silicide를 형성시, 단결정 실리콘 위에 P, B$F_2$불순물(5${\times}10^{15}ions/cm^2$)과 다결정 실리콘 위에 P 불순물(5${\times}10^{15}ions/cm^2$)을 이온 주입하여 아르곤 분위기에서 급속열처리(RTA)하였다. 열처리는 600-120$0^{\circ}C$ 온도구간에서 20초간 행하였다. Mo-silicide의 특성 및 불순물의 거동은 4-point probe, X선 회절분석, SEM, SIMS, $\alpha$-step을 통해 조사하였다. 80$0^{\circ}C$에서 부터 MoS$i_2가 형성되며 열처리 온도가 증가할수록 낮은 비저항간을 갖는 안정한 MoS$i_2로 결정화가 이루어진다. 또한 열처리 동안 단결정 실리콘과 다결정 실리콘에서 Mo-silicide층으로 불순물의 내부 확산은 거의 발생하지 않았다.

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Multicrystalline Silicon Texturing for Large Area CommercialSolar Cell of Low Cost and High Efficiency

  • Dhungel, S.K.;Karunagaran, B.;Kim, Kyung-Hae;Yoo, Jin-Su;SunWoo, H.;Manna, U.;Gangopadhyay, U.;Basu, P.K.;Mangalaraj, D;Yi, J.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.280-284
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    • 2004
  • Multicrystalline silicon wafers were textured in an alkaline bath, basically using sodium hydroxide and in acidic bath, using mainly hydrofluoric acid (HF), nitric acid $(HNO_3)$ and de-ionized water (DIW). Some wafers were also acid polished for the comparative study. Comparison of average reflectance of the samples treated with the new recipe of acidic solution showed average diffuse reflectance less than even 5 percent in the optimized condition. Solar cells were thus fabricated with the samples following the main steps such as phosphorus doping for emitter layer formation, silicon nitride deposition for anti-reflection coating by plasma enhanced chemical vapor deposition (PECVD) and front surface passivation, screen printing metallization, co-firing in rapid thermal processing (RTP) Furnace and laser edge isolation and confirmed >14 % conversion efficiency from the best textured samples. This isotropic texturing approach can be instrumental to achieve high efficiency in mass production using relatively low cost silicon wafers as starting material.

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Ultra Wideband (UWB) - Introduction and Signal Modeling

  • Manandhar, Dinesh;Shibasaki, Ryosuke
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 2003년도 Proceedings of ACRS 2003 ISRS
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    • pp.1421-1423
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    • 2003
  • Ultra Wideband is a new technology from commercial or civilian application viewpoint. It uses already allocated radio spectrum without causing significant interference to other users. It uses very low power, which is below the thermal noise of the receiver and is inherently difficult to detect by un-intentional users. Since, FCC approved the regulation for the commercial use of UWB in February 2002, the development of UWB technology is drastically gaining momentum. However, the technology itself is not new. It has already been used in military applications. UWB has three basic areas of applications, which are communication, positioning and imaging (UWB Microwave). The main commercial application will be for communication since it has very high data transfer rate for short distance. It can also be used for both indoor and outdoor 3-D positioning. Another important application is imaging like microwave remote sensing. An UWB sensor can pass through doors and walls and hence detect the objects inside the room. In this paper, we will introduce about UWB technology along with it’s various possible applications. We will also present some models to generate UWB signal and it’s analysis using signal-processing tools.

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Software Defined Radio 시스템을 위한 14비트 150MS/s 140mW $2.0mm^2$ 0.13um CMOS A/D 변환기 (A 14b 150MS/s 140mW $2.0mm^2$ 0.13um CMOS ADC for SDR)

  • 유필선;김차동;이승훈
    • 대한전자공학회논문지SD
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    • 제45권4호
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    • pp.27-35
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    • 2008
  • 본 논문에서는 고해상도와 높은 신호처리속도, 저전력 및 소면적을 동시에 요구하는 Software Defined Radio (SDR) 시스템 응용을 위한 14비트 150MS/s 0.13um CMOS ADC를 제안한다. 제안하는 ADC는 고해상도를 얻기 위한 특별한 보정 기법을 사용하지 않는 4단 파이프라인 구조로 설계하였고, 각 단의 샘플링 커패시턴스와 증폭기의 입력 트랜스컨덕턴스에 각각 최적화된 스케일링 계수를 적용하여 요구되는 열잡음 성능 및 속도를 만족하는 동시에 소모되는 전력을 최소화하였다. 또한, 소자 부정합에 의한 영향을 줄이면서 14비트 이상의 해상도를 얻기 위해 MDAC의 커패시터 열에는 인접신호에 덜 민감한 3차원 완전 대칭 구조의 레이아웃 기법을 제안하였으며, 온도 및 전원 전압에 독립적인 기준 전류 및 전압 발생기를 온-칩 RC 필터와 함께 칩 내부에 집적하고 칩 외부에 C 필터를 추가로 사용하여 스위칭 잡음에 의한 영향을 최소화하였고, 선택적으로 다른 크기의 기준 전압 값을 외부에서 인가할 수 있도록 하였다. 제안하는 시제품 ADC는 0.13um 1P8M CMOS 공정으로 제작되었으며, 측정된 DNL 및 INL은 14비트 해상도에서 각각 최대 0.81LSB, 2.83LSB의 수준을 보이며, 동적 성능은 120MS/s와 150MS/s의 동작 속도에서 각각 최대 64dB, 61dB의 SNDR과 71dB, 70dB의 SFDR을 보여준다. 시제품 ADC의 칩 면적은 $2.0mm^2$ 이며 전력 소모는 1.2V 전원 전압에서 140mW이다.

Considerations of Environmental Factors Affecting the Detection of Underwater Acoustic Signals in the Continental Regions of the East Coast Sea of Korea

  • Na, Young-Nam;Kim, Young-Gyu;Kim, Young-Sun;Park, Joung-Soo;Kim, Eui-Hyung;Chae, Jin-Hyuk
    • The Journal of the Acoustical Society of Korea
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    • 제20권2E호
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    • pp.30-45
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    • 2001
  • This study considers the environmental factors affecting propagation loss and sonar performance in the continental regions of the East Coast Sea of Korea. Water mass distributions appear to change dramatically in a few weeks. Simple calculation with the case when the NKCW (North Korean Cold Water) develops shows that the difference in propagation loss may reach in the worst up to 10dB over range 5km. Another factor, an eddy, has typical dimensions of 100-200km in diameter and 150-200m in thickness. Employing a typical eddy and assuming frequency to be 100Hz, its effects on propagation loss appear to make lower the normal formation of convergence zones with which sonars are possible to detect long-range targets. The change of convergence zones may result in 10dB difference in received signals in a given depth. Thermal fronts also appear to be critical restrictions to operating sonars in shallow waters. Assuming frequency to be 200Hz, thermal fronts can make 10dB difference in propagation loss between with and without them over range 20km. An observation made in one site in the East Coast Sea of Korea reveals that internal waves may appear in near-inertial period and their spectra may exist in periods 2-17min. A simulation employing simple internal wave packets gives that they break convergence zones on the bottom, causing the performance degradation of FOM as much as 4dB in frequency 1kHz. An acoustic experiment, using fixed source and receiver at the same site, shows that the received signals fluctuate tremendously with time reaching up to 6.5dB in frequencies 1kHz or less. Ambient noises give negative effects directly on sonar performance. Measurements at some sites in the East Coast Sea of Korea suggest that the noise levels greatly fluctuate with time, for example noon and early morning, mainly due to ship traffics. The average difference in a day may reach 10dB in frequency 200Hz. Another experiment using an array of hydrophones gives that the spectrum levels of ambient noises are highly directional, their difference being as large as 10dB with vertical or horizontal angles. This fact strongly implies that we should obtain in-situ information of noise levels to estimate reasonable sonar performance. As one of non-stationary noise sources, an eel may give serious problems to sonar operation on or under the sea bottoms. Observed eel noises in a pier of water depth 14m appear to have duration time of about 0.4 seconds and frequency ranges of 0.2-2.8kHz. The 'song'of an eel increases ambient noise levels to average 2.16dB in the frequencies concerned, being large enough to degrade detection performance of the sonars on or below sediments. An experiment using hydrophones in water and sediment gives that sensitivity drops of 3-4dB are expected for the hydrophones laid in sediment at frequencies of 0.5-1.5kHz. The SNR difference between in water and in sediment, however, shows large fluctuations rather than stable patterns with the source-receiver ranges.

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Investigation of thermal hydraulic behavior of the High Temperature Test Facility's lower plenum via large eddy simulation

  • Hyeongi Moon ;Sujong Yoon;Mauricio Tano-Retamale ;Aaron Epiney ;Minseop Song;Jae-Ho Jeong
    • Nuclear Engineering and Technology
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    • 제55권10호
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    • pp.3874-3897
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    • 2023
  • A high-fidelity computational fluid dynamics (CFD) analysis was performed using the Large Eddy Simulation (LES) model for the lower plenum of the High-Temperature Test Facility (HTTF), a ¼ scale test facility of the modular high temperature gas-cooled reactor (MHTGR) managed by Oregon State University. In most next-generation nuclear reactors, thermal stress due to thermal striping is one of the risks to be curiously considered. This is also true for HTGRs, especially since the exhaust helium gas temperature is high. In order to evaluate these risks and performance, organizations in the United States led by the OECD NEA are conducting a thermal hydraulic code benchmark for HTGR, and the test facility used for this benchmark is HTTF. HTTF can perform experiments in both normal and accident situations and provide high-quality experimental data. However, it is difficult to provide sufficient data for benchmarking through experiments, and there is a problem with the reliability of CFD analysis results based on Reynolds-averaged Navier-Stokes to analyze thermal hydraulic behavior without verification. To solve this problem, high-fidelity 3-D CFD analysis was performed using the LES model for HTTF. It was also verified that the LES model can properly simulate this jet mixing phenomenon via a unit cell test that provides experimental information. As a result of CFD analysis, the lower the dependency of the sub-grid scale model, the closer to the actual analysis result. In the case of unit cell test CFD analysis and HTTF CFD analysis, the volume-averaged sub-grid scale model dependency was calculated to be 13.0% and 9.16%, respectively. As a result of HTTF analysis, quantitative data of the fluid inside the HTTF lower plenum was provided in this paper. As a result of qualitative analysis, the temperature was highest at the center of the lower plenum, while the temperature fluctuation was highest near the edge of the lower plenum wall. The power spectral density of temperature was analyzed via fast Fourier transform (FFT) for specific points on the center and side of the lower plenum. FFT results did not reveal specific frequency-dominant temperature fluctuations in the center part. It was confirmed that the temperature power spectral density (PSD) at the top increased from the center to the wake. The vortex was visualized using the well-known scalar Q-criterion, and as a result, the closer to the outlet duct, the greater the influence of the mainstream, so that the inflow jet vortex was dissipated and mixed at the top of the lower plenum. Additionally, FFT analysis was performed on the support structure near the corner of the lower plenum with large temperature fluctuations, and as a result, it was confirmed that the temperature fluctuation of the flow did not have a significant effect near the corner wall. In addition, the vortices generated from the lower plenum to the outlet duct were identified in this paper. It is considered that the quantitative and qualitative results presented in this paper will serve as reference data for the benchmark.