• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.771-780
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• 2001

It is indispensable to use the process and device simulation tool in order to analyze accurately the electrical characteristics of ULSI CMOS devices, in addition to developing and manufacturing those devices. The 3D Monte Carlo (MC) simulation result is not efficient for large-area application because of the lack of simulation particles. In this paper is reported a new efficient simulation strategy for 3D MC ion implantation into large-area application using the 3D MC code of TRICSI(TRansport Ions into Crystal Silicon). The strategy is related to our newly proposed split-trajectory method and ion-splitting method(ion-shadowing approach) for 3D large-area application in order to increase the simulation ions, not to sacrifice the simulation accuracy for defects and implanted ions. In addition to our proposed methods, we have developed the cell based 3D interpolation algorithm to feed the 3D MC simulation result into the device simulator and not to diverge the solution of continuous diffusion equations for diffusion and RTA(rapid thermal annealing) after ion implantation. We found that our proposed simulation strategy is very computationally efficient. The increased number of simulation ions is about more than 10 times and the increase of simulation time is not twice compared to the split-trajectory method only.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.609-615
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• 2011

This paper is studied for the improvement of the characteristics of gate oxide with 3-nm-thick gate oxide by deuterium ion implantation methode. Deuterium ions were implanted to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas to nitrogen was performed to remove the damage of D-implantation. We simulated the deuterium ion implantation to find the optimum condition by SRIM (stopping and range of ions in matter) tool. We got the optimum condition by the results of simulation. We compare the electrical characteristics of the optimum condition with others terms. We also analyzed the electrical characteristics to change the annealing conditions after deuterium ion implantation. The results of the analysis, the breakdown time of the gate oxide was prolonged in the optimum condition. And a variety of annealing, we realized the dielectric property that annealing is good at longer time. However, the high temperature is bad because of thermal stress.

• Bulletin of the Korean Chemical Society
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• v.25 no.11
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• pp.1661-1666
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• 2004

The reaction of titanium tetraisopropoxide with 2 equiv of N,N-diethyl acetoacetamide affords Ti($O^iPr)_2(CH_3COCHCONEt_2)_2$ (1) as colorless crystals in 80% yield. Compound 1 is characterized by spectroscopic (Mass and $^1H/^{13}C$ NMR) and microanalytical data. Molecular structure of 1 has been determined by a single crystal X-ray diffraction study, which reveals that it is a monomeric, cis-diisopropoxide and contains a six coordinate Ti(IV) atom with a cis($CONEt_2$), trans($COCH_3$) configuration (1a) in a distorted octahedral environment. Variable-temperature $^1H$ NMR spectra of 1 indicate that it exists as an equilibrium mixture of cis, trans (1a) and cis, cis (1b) isomers in a 0.57 : 0.43 ratio at -20$^{\circ}C$ in toluene-$d_8$ solution. Thermal properties of 1 as a MOCVD precursor for titanium dioxide films have been evaluated by thermal gravimetric analysis and vapor pressure measurement. Thin films of pure anatase titanium dioxide (after annealing above 500$^{\circ}C$ under oxygen) have been grown on Si(100) with precursor 1 in the substrate temperature range of 350- 500$^{\circ}$ using a bubbler-based MOCVD method.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.11
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• pp.27-32
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• 1999

Metal-ferroelectric-semiconductor devices by susing rapid thermal annealed $LiNbO_3/Si$(100) structures were fabricated and demonstrated nonvolatile memory operations. The estimated field-effect electron mobility and transconductance on a linear region of the fabricated FET were about $600cm^2/V{\cdot}s$ and 0.16mS/mm, respectively. The ID-VG characteristics of MFSFET's showed a hysteresis loop due to the ferroelectric nature of the $LiNbO_3 films. The drain current of the on state was more than 4 orders of magnitude larger than the off state current at the same read gate voltage of 0.5V, which means the memory operation of the MFSFET. A write voltage as low as ${\pm}3V$, which is applicable to low power integrated circuits, was used for polarization reversal. The ferroelectric capacitors showed no polarization degradation up to $10^{10}$ switching cycles with the application of symmetric bipolar voltage pulse (peak-to-peak 6V, 50% duty cycle) of 500kHz.

• Korean Journal of Materials Research
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• v.2 no.5
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• pp.375-382
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• 1992

Molybdenum silicide films have been prepared by sputtering from a single composite MoS$i_2$ source on both P, B$F_2$respectively implanted (5${\times}10^{15}ions/cm^2$ single crystal and P implanted (5${\times}10^{15}ions/cm^2$) polycrystalline silicon substrates followed by rapid thermal annealing in the ambient of argon. The heat treatment temperatures have been varied in the range of 600-l20$0^{\circ}C$ for 20 seconds. The properties of Mo-silicide and the diffusion behaviors of dopant after the heat treatment are investigated using X-ray diffraction, scanning electron microscopy(SEM) , secondary ions mass spectrometry(SIMS), four-point probe and $\alpha-step.$ Annealing at 80$0^{\circ}C$ or higher resulted in conversion of the amorphous phase into predominantly MoS$i_2$and a lower sheet resistance. There was no significant out-diffusion of dopants from both single crystal and polycrystalline silicon substrate into molybdenum silicide layers during annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.280-284
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• 2004

Multicrystalline silicon wafers were textured in an alkaline bath, basically using sodium hydroxide and in acidic bath, using mainly hydrofluoric acid (HF), nitric acid $(HNO_3)$ and de-ionized water (DIW). Some wafers were also acid polished for the comparative study. Comparison of average reflectance of the samples treated with the new recipe of acidic solution showed average diffuse reflectance less than even 5 percent in the optimized condition. Solar cells were thus fabricated with the samples following the main steps such as phosphorus doping for emitter layer formation, silicon nitride deposition for anti-reflection coating by plasma enhanced chemical vapor deposition (PECVD) and front surface passivation, screen printing metallization, co-firing in rapid thermal processing (RTP) Furnace and laser edge isolation and confirmed >14 % conversion efficiency from the best textured samples. This isotropic texturing approach can be instrumental to achieve high efficiency in mass production using relatively low cost silicon wafers as starting material.

• Proceedings of the KSRS Conference
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• 2003.11a
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• pp.1421-1423
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• 2003

Ultra Wideband is a new technology from commercial or civilian application viewpoint. It uses already allocated radio spectrum without causing significant interference to other users. It uses very low power, which is below the thermal noise of the receiver and is inherently difficult to detect by un-intentional users. Since, FCC approved the regulation for the commercial use of UWB in February 2002, the development of UWB technology is drastically gaining momentum. However, the technology itself is not new. It has already been used in military applications. UWB has three basic areas of applications, which are communication, positioning and imaging (UWB Microwave). The main commercial application will be for communication since it has very high data transfer rate for short distance. It can also be used for both indoor and outdoor 3-D positioning. Another important application is imaging like microwave remote sensing. An UWB sensor can pass through doors and walls and hence detect the objects inside the room. In this paper, we will introduce about UWB technology along with it’s various possible applications. We will also present some models to generate UWB signal and it’s analysis using signal-processing tools.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.27-35
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• 2008

This work proposes a 14b 150MS/s 0.13um CMOS ADC for SDR systems requiring simultaneously high resolution, low power, and small size at high speed. The proposed ADC employs a calibration-free four-step pipeline architecture optimizing the scaling factor for the input trans-conductance of amplifiers and the sampling capacitance in each stage to minimize thermal noise effects and power consumption at the target resolution and sampling rate. A signal- insensitive 3-D fully symmetric layout achieves a 14b level resolution by reducing a capacitor mismatch of three MDACs. The proposed supply- and temperature- insensitive current and voltage references with on-chip RC filters minimizing the effect of switching noise are implemented with off-chip C filters. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates a measured DNL and INL within 0.81LSB and 2.83LSB, at 14b, respectively. The ADC shows a maximum SNDR of 64dB and 61dB and a maximum SFDR of 71dB and 70dB at 120MS/s and 150MS/s, respectively. The ADC with an active die area of $2.0mm^2$ consumes 140mW at 150MS/s and 1.2V.

• The Journal of the Acoustical Society of Korea
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• v.20 no.2E
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• pp.30-45
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• 2001

This study considers the environmental factors affecting propagation loss and sonar performance in the continental regions of the East Coast Sea of Korea. Water mass distributions appear to change dramatically in a few weeks. Simple calculation with the case when the NKCW (North Korean Cold Water) develops shows that the difference in propagation loss may reach in the worst up to 10dB over range 5km. Another factor, an eddy, has typical dimensions of 100-200km in diameter and 150-200m in thickness. Employing a typical eddy and assuming frequency to be 100Hz, its effects on propagation loss appear to make lower the normal formation of convergence zones with which sonars are possible to detect long-range targets. The change of convergence zones may result in 10dB difference in received signals in a given depth. Thermal fronts also appear to be critical restrictions to operating sonars in shallow waters. Assuming frequency to be 200Hz, thermal fronts can make 10dB difference in propagation loss between with and without them over range 20km. An observation made in one site in the East Coast Sea of Korea reveals that internal waves may appear in near-inertial period and their spectra may exist in periods 2-17min. A simulation employing simple internal wave packets gives that they break convergence zones on the bottom, causing the performance degradation of FOM as much as 4dB in frequency 1kHz. An acoustic experiment, using fixed source and receiver at the same site, shows that the received signals fluctuate tremendously with time reaching up to 6.5dB in frequencies 1kHz or less. Ambient noises give negative effects directly on sonar performance. Measurements at some sites in the East Coast Sea of Korea suggest that the noise levels greatly fluctuate with time, for example noon and early morning, mainly due to ship traffics. The average difference in a day may reach 10dB in frequency 200Hz. Another experiment using an array of hydrophones gives that the spectrum levels of ambient noises are highly directional, their difference being as large as 10dB with vertical or horizontal angles. This fact strongly implies that we should obtain in-situ information of noise levels to estimate reasonable sonar performance. As one of non-stationary noise sources, an eel may give serious problems to sonar operation on or under the sea bottoms. Observed eel noises in a pier of water depth 14m appear to have duration time of about 0.4 seconds and frequency ranges of 0.2-2.8kHz. The 'song'of an eel increases ambient noise levels to average 2.16dB in the frequencies concerned, being large enough to degrade detection performance of the sonars on or below sediments. An experiment using hydrophones in water and sediment gives that sensitivity drops of 3-4dB are expected for the hydrophones laid in sediment at frequencies of 0.5-1.5kHz. The SNR difference between in water and in sediment, however, shows large fluctuations rather than stable patterns with the source-receiver ranges.

• Nuclear Engineering and Technology
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• v.55 no.10
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• pp.3874-3897
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• 2023

A high-fidelity computational fluid dynamics (CFD) analysis was performed using the Large Eddy Simulation (LES) model for the lower plenum of the High-Temperature Test Facility (HTTF), a ¼ scale test facility of the modular high temperature gas-cooled reactor (MHTGR) managed by Oregon State University. In most next-generation nuclear reactors, thermal stress due to thermal striping is one of the risks to be curiously considered. This is also true for HTGRs, especially since the exhaust helium gas temperature is high. In order to evaluate these risks and performance, organizations in the United States led by the OECD NEA are conducting a thermal hydraulic code benchmark for HTGR, and the test facility used for this benchmark is HTTF. HTTF can perform experiments in both normal and accident situations and provide high-quality experimental data. However, it is difficult to provide sufficient data for benchmarking through experiments, and there is a problem with the reliability of CFD analysis results based on Reynolds-averaged Navier-Stokes to analyze thermal hydraulic behavior without verification. To solve this problem, high-fidelity 3-D CFD analysis was performed using the LES model for HTTF. It was also verified that the LES model can properly simulate this jet mixing phenomenon via a unit cell test that provides experimental information. As a result of CFD analysis, the lower the dependency of the sub-grid scale model, the closer to the actual analysis result. In the case of unit cell test CFD analysis and HTTF CFD analysis, the volume-averaged sub-grid scale model dependency was calculated to be 13.0% and 9.16%, respectively. As a result of HTTF analysis, quantitative data of the fluid inside the HTTF lower plenum was provided in this paper. As a result of qualitative analysis, the temperature was highest at the center of the lower plenum, while the temperature fluctuation was highest near the edge of the lower plenum wall. The power spectral density of temperature was analyzed via fast Fourier transform (FFT) for specific points on the center and side of the lower plenum. FFT results did not reveal specific frequency-dominant temperature fluctuations in the center part. It was confirmed that the temperature power spectral density (PSD) at the top increased from the center to the wake. The vortex was visualized using the well-known scalar Q-criterion, and as a result, the closer to the outlet duct, the greater the influence of the mainstream, so that the inflow jet vortex was dissipated and mixed at the top of the lower plenum. Additionally, FFT analysis was performed on the support structure near the corner of the lower plenum with large temperature fluctuations, and as a result, it was confirmed that the temperature fluctuation of the flow did not have a significant effect near the corner wall. In addition, the vortices generated from the lower plenum to the outlet duct were identified in this paper. It is considered that the quantitative and qualitative results presented in this paper will serve as reference data for the benchmark.