• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.180-184
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• 2002

In this paper, the electrical properties of PVD Ta and $TaN_x$ gate electrodes on $SiO_2$ and their thermal stabilities are investigated. The results show that the work functions of $TaN_x$ gate electrode are modified by the amount of N, which is controlled by the flow rate of $N_2$during reactive sputtering process. The thermal stability of Ta and $TaN_x$ with RTO-grown $SiO_2$ gate dielectrics is examined by changes in equivalent oxide thickness (EOT), flat-band voltage ($V_{FB}$), and leakage current after post-metallization anneal at high temperature in $N_2$ambient. For a Ta gate electrode, the observed decrease in EOT and leakage current is due to the formation of a Ta-incorporated high-K layer during the high temperature annealing. Less change in EOT and leakage current is observed for $TaN_x$ gate electrode. It is also shown that the frequency dispersion and hysteresis of high frequency CV curves are improved significantly by a post-metallization anneal.

• Laser Solutions
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• v.11 no.2
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• pp.26-32
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• 2008

Micro lens array (MLA) is widely used in information technology (IT) industry fields, for examples such as a projection display, an optical power regulator, a micro mass spectrometer and for medical appliances. Recently, MLA have been fabricated and developed by using a reflow method, micro etching, electroplating, micromachining and laser local heating. Laser local thermal-expansion (LLTE) technology demonstrates the formation of microdots on the surface of polymer substrate, in this paper. We have also investigated the new direct fabrication method of placing the MLA on the surface of a SU-8 photoresist layer. We have obtained the 3D shape of the micro lens processed by UV laser irradiation and have experimentally verified the optimal process conditions.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.45 no.2
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• pp.1-7
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• 2008

In this paper, we have designed a millimeter-wave passive imaging sensor that is able to use remote sensing and security applications. The brightness temperature distribution of a scene is measured with a antenna at an angular resolution of $3^{\circ}$. The sensor is controlled by a PC, achieving a fast performance by using a pan/tilter. The pan/tilter should be able to scan a 2-D image of the scene, with a linear raster scan pattern. The mechanical scans in azimuth and elevation whereby an image of $20{\times}20$ pixels is acquired within less than 400s. Raw images are immediately displayed and stored for postprocessing.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.68-74
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• 1998

Improved performance and suppressed short-channel effects of polysilicon thin film transistors (poly-Si TFTs) with very thin electron cyclotron resonance (ECR) $N_2$O-plasma gate oxide have been investigated. Poly-Si TFTs with ECR $N_2$O-plasma oxide ($N_2$O-TFTs) show better performance as well as suppressed short-channel effects than those with conventional thermal oxide. The fabricated $N_2$O-TFTs do not show threshold voltage reduction until the gate length is reduced to 3 ${\mu}{\textrm}{m}$ for n-channel and 1 ${\mu}{\textrm}{m}$ for p-channel, respectively. The improvements are due to the smooth interface, passivation effects, and strong Si ≡ N bonds.

• Spatial Information Research
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• v.18 no.4
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• pp.1-11
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• 2010

Unlike the previous studies which have focused on 2-dimensional urban characteristics, this paper presents statistical models explaining urban heat island(UHI) effect by 3-dimensional urban morphologic information and addresses its policy implications. 3~dimensional informations of Columbus, Ohio arc captured from LiDAR data and building boundary informations are extracted from a building digital map, Finally NDV[ and temperature data are calculated by manipulating band 3, band 4, and thermal hand of LandSat images. Through complicated data processing, 6 independent variables(building surface area, building volume, height to width ratio, porosity, plan surface area) are introduced in simple and multiple linear regression models. The regression models are specified by Box-Tidwell method, finding the power to which the independent variable needs to raised to be in a linearity. Porosity, NDVI, and building surface area are carefully chosen as explanatory variables in the final multiple regression model, which explaining about 57% of the variability in temperatures. On reducing UHI, various implications of the results give guidelines to policy-making in open space, roof garden, and vertical garden management.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.687-692
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• 2018

In this paper, the development of an automotive thermal imaging camera providing image information for ADAS (Advanced Driver Assist System) and autonomous vehicles is described and an improved technique to enhance the details of the image is proposed. Thermal imaging cameras are used in various fields, such as the medical, industrial and military fields, for the purpose of temperature measurement and night vision. In automobiles, they are utilized for night vision systems. For their utilization in ADAS and autonomous vehicles, appropriate image resolution and enhanced detail are required for object recognition. In this study, a $640{\times}480$ resolution thermal imaging camera that can be applied to automobiles is developed and the BDE (Block-Range Detail Enhancement) technique is applied to improve the details of the image. In order to improve the image detail obtained in various driving environments, the block-range values between the target pixel and the surrounding 8 pixels are calculated and classified into 5 levels. Then, different factors are added or subtracted to obtain images with high utilization. The improved technique distinguishes the dark part of the image by the resulting temperature difference of 130mK and shows an improvement in the fine detail in both the bright and dark parts of the image. The developed thermal imaging camera using the improved detail enhancement technique is applied to a test vehicle and the results are presented.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.495-502
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• 2014

Fast recovery diodes (FRDs) were developed using the $p^{{+}{+}}/n^-/n^{{+}{+}}$ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current, < $10^{-9}$ A. From the temperature dependence of thermal activation energy, the reverse leakage current was dominated by thermal generation-recombination and diffusion, respectively, at low and high temperature regions. By virtue of the abrupt junction and the Pt drive-in for the controlling of carrier lifetime, the soft reverse recovery behavior could be obtained along with a well-controlled reverse recovery time of 21.12 ns. The FRDs exhibited excellent ESD robustness with negligible degradations in the I-V and the reverse recovery characteristics up to ${\pm}5.5$ kV of HBM and ${\pm}3.5$ kV of IEC61000-4-2 shocks. Likewise, transmission line pulse (TLP) analysis reveals that the FRDs can handle the maximum peak pulse current, $I_{pp,max}$, up to 30 A in the forward mode and down to - 24 A in the reverse mode. The robust ESD property can improve the long term reliability of various power applications such as automobile and switching mode power supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.10
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• pp.14-22
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• 2010

The source/channel/drain regions are formed by ion implantation with different dopant types of $n^+/p^{(+)}/n^+$ in the fabrication of the conventional n-type metal-oxide-semiconductor field effect transistor(NMOSFET). In implementing the ultra-small devices with channel length of sub-30 nm, in order to achieve the designed effective channel length accurately, low thermal budget should be considered in the fabrication processes for minimizing the lateral diffusion of dopants although the implanted ions should be activated as completely as possible for higher on-current level. Junctionless (JL) MOSFETs fully capable of the the conventional NMOSFET operations without p-type channel for enlarging the process margin are under researches. In this paper, the optimum design of the JL MOSFET based on silicon nanowire (SNW) structure is carried out by 3-D device simulation and the basic radio frequency (RF) characteristics such as conductance, maximum oscillation frequency($f_{max}$), current gain cut-off frequency($f_T$) for the optimized device. The channel length was 30 run and the design variables were the channel doping concentration and SNW radius. For the optimally designed JL SNW NMOSFET, $f_T$ and $f_{max}$ high as 367.5 GHz and 602.5 GHz could be obtained, respectively, at the operating bias condition $V_{GS}$ = $V_{DS}$ = 1.0 V).

• Journal of Powder Materials
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• v.27 no.3
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• pp.219-225
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• 2020

The directed energy deposition (DED) process of metal 3D printing technologies has been treated as an effective method for welding, repairing, and even 3-dimensional building of machinery parts. In this study, stainless steel 316L (STS316L) and Inconel 625 (IN625) alloy powders are additively manufactured using the DED process, and the microstructure of the fabricated STS316L/IN625 sample is investigated. In particular, there are no secondary phases in the interface between STS316L and the IN625 alloy. The EDS and Vickers hardness results clearly show compositionally and mechanically transient layers a few tens of micrometers in thickness. Interestingly, several cracks are only observed in the STS 316L rather than in the IN625 alloy near the interface. In addition, small-sized voids 200-400 nm in diameter that look like trapped pores are present in both materials. The cracks present near the interface are formed by tensile stress in STS316L caused by the difference in the CTE (coefficient of thermal expansion) between the two materials during the DED process. These results can provide fundamental information for the fabrication of machinery parts that require joining of two materials, such as valves.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.37-43
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• 1999

Modules of the system that requires large capacity and high-speed information processing are implemented in the form of MCM that allows high-speed data processing, high density circuit integration and widely applied to such fields as ATM, GPS and PCS. Hence we developed the ATM switching module that is consisted of three chips and 2.48 Gbps data throughput, in the form of 10 multi-layer by Cu/Photo-BCB and 491pin PBGA which size is $48 \times 48 \textrm {mm}^2$. hnologies required for the development of the MCM includes extracting parameters for designing the substrate/package through the interconnect characterization to implement the high-speed characteristics, thermal management at the high-density MCM, and the generation of the testability that is one of the most difficult issues for developing the MCM. For the development of the ATM Switching MCM, we extracted signaling delay, via characteristics and crosstalk parameters through the interconnect characterization on the MCM-D. For the thermal management of 15.6 Watt under the high-density structure, we carried out the thermal analysis. formed 1.108 thermal vias through the substrate, and performed heat-proofing processing for the entire package so that it can keep the temperature less than $85^{\circ}C$. Lastly, in order to ensure the testability, we verified the substrate through fine pitch probing and applied the Boundary Scan Test (BST) for verifying the complex packaging/assembling processes, through which we developed an efficient and cost-effective product.