• Title/Summary/Keyword: 3C-SiC (Silicon carbide)

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SiC Synthesis by Using Sludged Si Power (폐슬러지 Si 분말을 이용한 SiC 제조)

  • 최미령;김영철;장영철
    • Journal of the Microelectronics and Packaging Society
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    • v.10 no.3
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    • pp.67-71
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    • 2003
  • Sawing silicon ingot with abrasive slurry generates sludge that includes abrasive powders, cutting oil, and silicon powders. The abrasive powders and cutting oil are being separated and reused. Mixing the remained stodged silicon powders with carbon powders and subsequent heat-treatment are conducted to produce silicon carbide. The size of SiC whiskers and powders was smaller than the conventionally grown silicon carbide whiskers that were synthesized by adding micron-size metal impurities. Impurity related mechanism is attributed to the formation of the silicon carbide whiskers, as metal impurities are contained in the stodged silicon powders.

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Preparation of Silicon Nitride-silicon Carbide Composites from Abrasive SiC Powders

  • Kasuriya, S.;Thavorniti, P.
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.1091-1092
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    • 2006
  • Silicon nitride - silicon carbide composite was developed by using an abrasive SiC powders as a raw material. The composites were prepared by mixing abrasive SiC powder with silicon, pressing and sintering at $1400^{\circ}C$ under nitrogen atmosphere in atmosphere controlled vacuum furnace. The proportion of silicon in the initial mixtures varied from 20 to 50 wt%. After sintering, crystalline phases and microstructure were characterized. All composites consisted of ${\alpha}-Si_3N_4$ and ${\beta}-Si_3N_4$ as the bonding phases in SiC matrix. Their physical and mechanical properties were also determined. It was found that the density of the obtained composites increased with an increase in the $Si_3N_4$ content formed in the reaction.

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Properties of Silicon Carbide-Carbon Fiber Composites Prepared by Infiltrating Porous Carbon Fiber Composites with Liquid Silicon

  • Lee, Jae-Chun;Park, Min-Jin;Shin, Kyung-Sook;Lee, Jun-Seok;Kim, Byung-Gyun
    • The Korean Journal of Ceramics
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    • v.3 no.4
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    • pp.229-234
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    • 1997
  • Silicon carbide-carbon fiber composites have been prepared by partially Infiltrating porous carbon fiber composites with liquid silicon at a reaction temperature of $1670^{\circ}C$. Reaction between molten silicon and the fiber preform yielded silicon carbide-carbon fiber composites composed of aggregates of loosely bonded SiC crystallites of about 10$\mu\textrm{m}$ in size and preserved the appearance of a fiber. In addition, the SiC/C fiber composites had carbon fibers coated with a dense layer consisted of SiC particles of sizes smaller than 1$\mu\textrm{m}$. The physical and mechanical properties of SiC/C fiber composites were discussed in terms of infiltrated pore volume fraction of carbon preform occupied by liquid silicon at the beginning of reaction. Lower bending strength of the SiC/C fiber composites which had a heterogeneous structure in nature, was attributed to the disruption of geometric configuration of the original carbon fiber preform and the formation of the fibrous aggregates of the loosely bonded coarse SiC particles produced by solution-precipitation mechanism.

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Growth of SiC film on SiNx/Si Structure (SiNx/Si 구조를 이용한 SiC 박막성장)

  • Kim, Gwang-Cheol;Park, Chan-Il;Nam, Gi-Seok;Im, Gi-Yeong
    • Korean Journal of Materials Research
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    • v.10 no.4
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    • pp.276-281
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    • 2000
  • Silicon carbide(SiC) films were grown on modified Si(111) surface with a SiNx in the NH$_3$surrounding. Thickness of SiC films was decreased with increasing of the nitridation time. Also, voids having crystal defects were removed at interface of SiC/Si according to growth parameters. SiC films were grown on SiNx/Si substrate of 100, 300 and 500nm thickness. SiC films were deposited along [111] direction and columnar grains of SiC crystal. The void-free film was observed in the interface of SiC/SiNx. This result suggests that fabrication of SiC devices are applied to SiNx replacing silicon oxide in SOI structure.

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Role of Amorphous Silicon carbide in Microstructure and mechanical Properties of nc_TiC/a-SiC Nanocpomposite Coatings Prepared by PECVD (nc-TiC/a-SiC 나노복합체코팅의 기계적 특성 및 미세구조에서 비정질 SiC의 역할)

  • Lee, Ju-Hui;Kim, Gwang-Ho
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2007.11a
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    • pp.123-124
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    • 2007
  • 3성분계 Ti-Si-C 코팅은 PECVD 기술에 의해 WC-Co 기판에 합성되었다. 이 연구에서 Ti-Si-C코팅에서의 비정질 silicon carbide 상의 효과는 XRD, XPS, TEM에 의해 분석되었다. TiC 결정의 입자크기는 비정질 silicon carbide의 침투 현상 때문에 Si의 함유량이 증가됨에 따라 감소된다. Ti-Si-C 코팅은 5.2%의 Si함유량에서 나노크기의 nc-TiC결정과 비정질 a-SiC로 이루어져 있고 최고 경도 33GPa와 탄성율 330GPa를 각각 보여주고 있다. 이 수치들은 순수한 TiC(-21GPa, 260Gpa)보다 눈에 띄게 높아졌다.

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Mechanical Properties of Silicon Carbide-Silicon Nitride Composites Sintered with Yttrium Aluminum Garnet (YAG상 첨가 탄화규소-질화규소 복합재료의 기계적 특성)

  • 이영일;김영욱;최헌진;이준근
    • Journal of the Korean Ceramic Society
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    • v.36 no.8
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    • pp.799-804
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    • 1999
  • Composites of SiC-Si3N4 consisted of uniformly distributed elongated $\beta$-Si3N4 grains and equiaxed $\beta$-SiC grains were fabricated with $\beta$-SiC,. $\alpha$-Si3N4 Al2O3 and Y2O3 powders. By hot-pressing and subsequent annelaing elongated $\beta$-Si3N4 grains were grown via$\alpha$longrightarrow$\beta$ phase transformation and equiaxed $\beta$-Si3N4 composites increased with increasing the Si3N4 content owing to the reduced defect size and enhanced crack deflection by elongated $\beta$-Si3N4 grains and the grain boundary strengthening by nitrogen incorporation. Typical flexural strength and fracture toughness of SiC-40 wt% Si3N4 composites were 783 MPa and 4.2 MPa.m1/2 respectively.

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Chemical Vapor Deposition of Silicon Carbide Thin Films Using the Single Precursor 1,3-Disilabutane

  • Lee, Kyung-Won;Boo, Jin-Hyo;Yu, Kyu-Sang;Kim, Yunsoo
    • The Korean Journal of Ceramics
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    • v.3 no.3
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    • pp.177-181
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    • 1997
  • Epitaxial films of cubic silicon carbide (3C-SiC, $\beta$-SiC) have been grown on Si(001) and Si(111) substrates by high vacuum chemical vapor deposition using the single precursor 1,3-disilabutane, $H_3SiCH_2SiH_2CH_3$, at temperatures 900~$100^{\circ}C$. The advantage of using the single precursor over the covnentional chemical vapor deposition is evident in that the source chemical is safe to handle, carbonization of the substrates is not necessary, accurate stoichiometry of the silicon carbide films is easily achieved, and the deposition temperature is much lowered. The films were characterized by XPS, XRD, SEM, RHEED, RBS, AES, and TED.

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Flexural Strength of Macroporous Silicon Carbide Ceramics (거대기공 다공질 탄화규소 세라믹스의 꺾임강도)

  • Lim, Kwang-Young;Kim, Young-Wook;Song, In-Hyuck;Bae, Ji-Soo
    • Journal of the Korean Ceramic Society
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    • v.48 no.5
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    • pp.360-367
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    • 2011
  • Macroporous silicon carbide (SiC) ceramics were fabricated by powder processing and polymer processing using carbon-filled polysiloxane as a precursor. The effects of the starting SiC polytype, template type, and template content on porosity and flexural strength of macroporous SiC ceramics were investigated. The ${\beta}$-SiC powder as a starting material or a filler led to higher porosity than ${\alpha}$-SiC powder, owing to the impingement of growing ${\alpha}$-SiC grains, which were transformed from ${\beta}$-SiC during sintering. Typical flexural strength of powder-processed macroporous SiC ceramics fabricated from ${\alpha}$-SiC starting powder and polymer microbeads was 127 MPa at 29% porosity. In contrast, that of polymer-processed macroporous SiC ceramics fabricated from carbon-filled polysiloxane, ${\beta}$-SiC fillers, and hollow microspheres was 116MPa at 29% porosity. The combination of ${\alpha}$-SiC starting powder and a fairly large amount (10 wt%) of $Al_2O_3-Y_2O_3$ additives led to macroporous SiC ceramics with excellent flexural strength.

Effect of the Si-C Powder Prepared by Mechanical Alloying on the Densification of Silicon Carbide Powder

  • Yoon, Bola;Lee, Sea-Hoon;Lee, Heesoo;Hwang, Geumchan;Kim, Byungsook
    • Journal of the Korean Ceramic Society
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    • v.53 no.1
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    • pp.99-104
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    • 2016
  • High purity Si-C (99.999%) powder prepared by mechanical alloying was added to a commercial SiC powder as a sintering additive. Reaction bonded silicon carbide balls and jars with high purity (99.98%) were used for the mechanical alloying. As a result, the purity of the sintered Si-C was higher than 99.99%. When sintered at $2200^{\circ}C$ under 50 MPa pressure for 1 h, SiC containing 10 wt% of high purity Si-C showed a relative density of 95.3%, similar to the relative density of commercial SiC (95%). However, the relative density of SiC decreased to 90.6% without the additive when the applied pressure decreased to 40 MPa. In contrast, the relative density was nearly unaffected by the decrease of the pressure when using the Si-C additive. Therefore, the addition of Si-C powder promoted the densification of SiC above $2000^{\circ}C$ under 40 MPa pressure.

Effect of Starting SiC Particle Size on Nitridation and Strength of Silicon Nitride-Bonded Silicon Carbide Ceramics (출발 SiC 입자 크기가 Si3N4-Bonded SiC 세라믹스의 질화율과 강도에 미치는 영향)

  • Choi, Young-Hoon;Kim, Young-Wook;Woo, Sang-Kuk;Han, In-Sub
    • Journal of the Korean Ceramic Society
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    • v.47 no.2
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    • pp.157-162
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    • 2010
  • Effect of starting SiC particle size on nitridation rate and flexural strength of $Si_3N_4$-bonded-SiC (SNBSC) ceramics was investigated by using SiC particles of different size (${\sim}200\;{\mu}m$, ${\sim}100\;{\mu}m$ and ${\sim}45\;{\mu}m$). The specimen prepared from smaller SiC particles resulted in higher nitridation rate after nitridation at $1450^{\circ}C$, owing to the lower packing density in green body. The flexural strength showed maxima after 1-h nitridation for all specimens and then decreased with prolonged nitridation because of local densification-induced pore coarsening. The specimen prepared from smaller SiC particles showed better flexural strength because of smaller pore size and partly higher nitridation rate in the specimen. A maximal flexural strength of 29 MPa was obtained in the specimen with a density of $2.04\;g{\cdot}cm^3$, which was prepared from $45\;{\mu}m$-SiC particles.