• 제목/요약/키워드: 3.5 GHz band

검색결과 840건 처리시간 0.042초

초고주파 구형도파로를 이용한 엔진 오일의 유전율 측정 (Microwave Rectangular Waveguide Measurement of the Engine Oil Dielectric Constant)

  • 김기훈;김영주
    • Tribology and Lubricants
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    • 제27권3호
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    • pp.156-161
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    • 2011
  • The rectangular waveguide technique can be used to measure the complex permittivity of dielectric material of various thickness and cross section. This paper presents the analysis system of engine oil permittivity at which deterioration of engine oil is measured at the X-band(8-12.5 GHz). The middle of the rectangular waveguide has engine oil case and is connected with VNA(Vector Network Analyzer) for the measurement of the transmission$(S_{21})$ and reflection$(S_11)$ and then the permittivity is extracted. The deterioration of engine oil is proved by the comparison with both the extracted data and reference data. As the additional research, This paper suggest that an accurate permittivity is considered by not only the wave guide length but the air gap between oil case and the waveguide.

Reducing the Interference in Compact MIMO Antennas of CRLH-TL-Based Broadside-Capacitive and Slot Couplings

  • Jang, Kyeongnam;Kahng, Sungtek;Yang, Inkyu;Kim, Hyeongseok;Wu, Qun
    • Journal of Electrical Engineering and Technology
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    • 제9권3호
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    • pp.997-1001
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    • 2014
  • In this paper, the interference in small MIMO antennas having two identical composite right- and left-handed transmission-line(CRLH-TL)-based radiating elements is remarkably decreased. The radiating element has the broadside-capacitive coupling as well as slots to be equivalent to the CRLH-TL to prevent the size from increasing for an LTE high band. The suspended line bridging the two radiating elements is optimized to lower the interference between them down to -23 dB, while the overall MIMO antenna system is compact and its antenna performance is acceptable. The design is tested for 2.5 GHz.

A Dual-Mode 2.4-GHz CMOS Transceiver for High-Rate Bluetooth Systems

  • Hyun, Seok-Bong;Tak, Geum-Young;Kim, Sun-Hee;Kim, Byung-Jo;Ko, Jin-Ho;Park, Seong-Su
    • ETRI Journal
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    • 제26권3호
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    • pp.229-240
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    • 2004
  • This paper reports on our development of a dual-mode transceiver for a CMOS high-rate Bluetooth system-onchip solution. The transceiver includes most of the radio building blocks such as an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, a variable gain amplifier (VGA), a dc offset cancellation circuit, a quadrature local oscillator (LO) generator, and an RF front-end. It is designed for both the normal-rate Bluetooth with an instantaneous bit rate of 1 Mb/s and the high-rate Bluetooth of up to 12 Mb/s. The receiver employs a dualconversion combined with a baseband dual-path architecture for resolving many problems such as flicker noise, dc offset, and power consumption of the dual-mode system. The transceiver requires none of the external image-rejection and intermediate frequency (IF) channel filters by using an LO of 1.6 GHz and the fifth order onchip filters. The chip is fabricated on a $6.5-mm^{2}$ die using a standard $0.25-{\mu}m$ CMOS technology. Experimental results show an in-band image-rejection ratio of 40 dB, an IIP3 of -5 dBm, and a sensitivity of -77 dBm for the Bluetooth mode when the losses from the external components are compensated. It consumes 42 mA in receive ${\pi}/4-diffrential$ quadrature phase-shift keying $({\pi}/4-DQPSK)$ mode of 8 Mb/s, 35 mA in receive GFSK mode of 1 Mb/s, and 32 mA in transmit mode from a 2.5-V supply. These results indicate that the architecture and circuits are adaptable to the implementation of a low-cost, multi-mode, high-speed wireless personal area network.

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협대역 고출력 전자기파에 의한 CMOS IC의 전기적 특성 분석 (An Electrical Properties Analysis of CMOS IC by Narrow-Band High-Power Electromagnetic Wave)

  • 박진욱;허창수;서창수;이성우
    • 한국전기전자재료학회논문지
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    • 제30권9호
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    • pp.535-540
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    • 2017
  • The changes in the electrical characteristics of CMOS ICs due to coupling with a narrow-band electromagnetic wave were analyzed in this study. A magnetron (3 kW, 2.45 GHz) was used as the narrow-band electromagnetic source. The DUT was a CMOS logic IC and the gate output was in the ON state. The malfunction of the ICs was confirmed by monitoring the variation of the gate output voltage. It was observed that malfunction (self-reset) and destruction of the ICs occurred as the electric field increased. To confirm the variation of electrical characteristics of the ICs due to the narrow-band electromagnetic wave, the pin-to-pin resistances (Vcc-GND, Vcc-Input1, Input1-GND) and input capacitance of the ICs were measured. The pin-to-pin resistances and input capacitance of the ICs before exposure to the narrow-band electromagnetic waves were $8.57M{\Omega}$ (Vcc-GND), $14.14M{\Omega}$ (Vcc-Input1), $18.24M{\Omega}$ (Input1-GND), and 5 pF (input capacitance). The ICs exposed to narrow-band electromagnetic waves showed mostly similar values, but some error values were observed, such as $2.5{\Omega}$, $50M{\Omega}$, or 71 pF. This is attributed to the breakdown of the pn junction when latch-up in CMOS occurred. In order to confirm surface damage of the ICs, the epoxy molding compound was removed and then studied with an optical microscope. In general, there was severe deterioration in the PCB trace. It is considered that the current density of the trace increased due to the electromagnetic wave, resulting in the deterioration of the trace. The results of this study can be applied as basic data for the analysis of the effect of narrow-band high-power electromagnetic waves on ICs.

5세대 이동통신을 위한 MMB 시스템 및 채널 모델 (MMB System and Channel Model for 5th Generation Mobile Communication)

  • 문상미;김보라;사란쉬말리크;김지형;이문식;김대진;황인태
    • 전자공학회논문지
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    • 제51권8호
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    • pp.3-10
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    • 2014
  • 최근 폭증하는 모바일 데이터 트래픽을 수용하기 위하여 밀리미터파 (mmWave)가 큰 관심을 받고 있으며, 4 세대 LTE-A(Long Term Evolution-Advanced) 표준을 기반으로 MMB (Millimeter Mobile Broadband) 시스템의 필요성이 대두되고 있다. 현재 mmWave 통신 채널에 대한 많은 연구가 이루어지고 있으며, MMB 채널 환경에 대한 성능 분석 또한 관심의 대상이다. 본 논문에서는 5세대 이동통신을 위한 MMB 시스템을 설계하고 mmWave의 전파 특성 분석을 통한 채널 모델을 제안한다. 또한 MMB 시스템의 28 GHz 대역에서 MMB 채널 환경에 대한 성능을 비교 분석한다.

CeO$_2$ 버퍼막과 함께 ${\alpha}\;-Al_2O_3$ 기판 위에 성장된 YBCO 박막을 사용한 HTS Microscrp Bandpass filter의 제작 (Fabrication of HTS Microstrip Bandpass Filters using CeO$_2$ buffered YBCO Films grown on ${\alpha}\;Al_2O_3$ substrates)

  • 정구락;추형곤;강준희;박상진;석중현;이은홍
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.58-62
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    • 1999
  • We fabricated a new hairpin type HTS 2-pole microstrip Bandpass filter to operate at 5.8GHz. The fabrication method was pulsed laser deposition and YBCO films were deposited on ${\alpha}$-A1$_2O_3$ substrates with a CeO$_2$ thin layer as a buffer layer. We developed a new style hairpin type filter by using interdigitide innerpole. Compared to the saute size regular hairpin type filters, our filter had a lower center frequency, bandwidth and loss by an amount of 14.5%, 29.6%, 0.5488dB, respectively. The size of the filters were 13.7${\times}$3.3mm. We did simulations on the several types of band pass filters by using HFSS and serenade. We measured growth rate and Tc of YBCO films grown on CeO$_2$/ ${\alpha}$-A1$_2O_3$ substrates which were rotated while growing films.

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L-band 30-MW 클라이스트론용 고출력 펄스트랜스포머의 파라미터 평가 (Parameter Evaluation of High-Power Pulse Transformer for L-Band 30-MW Klystron)

  • 장성덕;손윤규;권세진;오종석;김상훈;양해룡;문성익;권봉환;조무현;남궁원
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.1079-1081
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    • 2007
  • An L-band Linear Accelerator System for E-beam sterilization is under construction for bio-technology application. The klystron-modulator system as an RF microwave source has an important role as major components to offer the system reliability for long time steady-state operations. A PFN line type pulse generator with a peak power of 71.5-MW, $7\;{\mu}s$, 285 pps is required to drive a high-power klystron. The high power pulse transformer has a function of transferring pulse energy from a pulsed power source to a high power load. The pulse transformer producing a pulse with a peak voltage of 275 kV is required to produce 30-MW peak and 60 kW average RF output power at the frequency of 1.3-GHz. We have designed the high power pulse transformer with 1:13 step-up ratio. The peak and average power capability is 71.5-MW (275 kV, 260 A at load side with $7\;{\mu}s$ pulse width) and 130 kW, respectively. In this paper, we present measurements and its analysis on the design parameters, and an initial test result as well as a design concept on the high-power pulse transformer.

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IEEE 802.11a 규격을 만족하는 5GHz 대역 무선 랜용 RF 모듈의 설계, 제작과 성능 평가 (Design, fabrication, and evaluation of RF module in compliance with the IEEE 802.11a standard for 5GHz-band Wireless-LAN applications)

  • 권도훈;김영일;이성수;박현철
    • 한국통신학회논문지
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    • 제27권3C호
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    • pp.248-255
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    • 2002
  • IEEE 802.11a 무선 랜 규격을 만족하는 RF 송수신기를 모듈의 형태로 제작하고 성능을 평가하였다. 주파수 변환 방식은 520MHz의 중간 주파수를 갖는 헤테로다인 구조를 채택하였다. 측정 결과 수신기는 잡음지수 5dB, 최대 이득 70dB, 그리고 61dB의 넓은 입력 동작 범위를 얻었다. 또한 중간 주파수 대역의 채널 선정 필터는 SAW 필터를 채용하여 채널간의 간섭 잡음을 최소화하였다. 송신기는 규격에 정의된 정격 출력을 만족하는 동시에 34dBm의 출력 P1dB를 가져 낮은 대역, 중간 대역에 대해 각각 18dB, 11dB의 출력 여유분을 보유함으로써 직교 주파수 분할 다중(OFDM) 변조방식의 큰 평균대비 최고 출력 비율에 대응하였다.

K/Ka밴드 응용을 위한 완전집적화 고성능 광대역 증폭기 MMIC (A Fully-integrated High Performance Broadb and Amplifier MMIC for K/Ka Band Applications)

  • 윤영
    • 한국정보통신학회논문지
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    • 제8권7호
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    • pp.1429-1435
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    • 2004
  • 본 논문에서는 DC 바이어스 소자와 정전파괴 보호회로를 MMIC상에 모두 내장한 완전집적화 K/Ka밴드 광대역 증폭기 MMIC를 제작하였으며, 따라서 MMTC의 동작을 위해서는 프린트기판상의 외부소자가 불필요하였다 DC 바이어스 용량성소자로서는, 소형의 SrTiO3 (STO) 커패시터를 MMIC 내부에 집적하였으며, DC feed 소자로서는 소형의 LC병렬공진회로를 집적하였다. 그리고 정전파괴방지를 위해서는 소형의 LC병렬공진 정전파괴 보호회로를 MMIC의 입출력부에 내장하였다. 정전파괴 보호회로에 의해 정전파괴전압은 10 V에서 300 V까지 개선되었다. 광대역에 걸쳐서 양호한 RF특성과 안정도를 보장하기 위해서, 프리매칭 기법과 RC병렬 안정화 회로가 이용되었다. 제작된 MMIC는 K/Ka 밴드의 광대역(17-28 GHz)에 걸쳐서 $20{\pm}2$ dB의 전력이득, $21{\pm}1.5$ dBm의 1dB 이득 압축점 (P1dB)의 양호한 RF특성을 보였다. 그리고 제작된 MMIC로부터 DC에서 동작주파수이상의 광대역에 걸쳐서 안정화 특성을 관찰 할 수 있었다. 제작된 MMIC의 면적은 $1.7{\pm}0.8$ mm2이었다.

PCS단말기용 아이솔레이터의 설계제작 (Design and Implementation of Isolator for PCS Phone)

  • 권원현;김태현;이영훈
    • 대한전자공학회논문지TC
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    • 제37권3호
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    • pp.49-57
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    • 2000
  • 본 연구에서는 집중정수형 아이솔레이터를 산란행렬을 이용하여 해석 및 설계하고, 설계된 최적 파라메타 를 이용하여 1.7650Hz 대역의 PCS 단말기용 소형 아이솔레이터를 제작하고 시험하였다. 7.Ox7.Ox2.3㎣ 의 크기로 구현된 아이솔레이터의 전력 Isolation S/sub 12/는 중심주파수에서 약 29.95 dB 이상으로 측정되었으며, 삽입손실 S/sub 21/특성은 30MHz 동작 대역폭 내에서 약 0.35 dB 이하의 손실을 나타내었다. 입출력단 반 사계수 5/sub 11/ 및 5/sub 22/는 동작대역폭 내에서 -19 dB로 측정되어 구현된 제품이 기존의 제품에 비해 우수한 성 능 특성을 지니고 있음을 알 수 있었다.

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