• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.154-162
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• 1998

A planar Bi-Sb multijunction thermal converter with high thermal sensitivity and small ac-dc transfer error has been fabricated by preparing the bifilar thin film Pt-heater and the hot junctions of thin film Bi-Sb thermopile on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-diaphragm, which functions as a thermal isolation layer, and the cold junctions on the dielectric membrane supported with the Si-substrate, which acts as a heat sink, and its ac-dc transfer characteristics were investigated with the fast reversed dc method. The respective thermal sensitivities of the converter with single bifilar heater were about 10.1 mV/mW and 14.8 mV/mW in the air and vacuum, and those of the converter with dual bifilar heater were about 5.1 mV/mW and 7.6 mV/mW, and about 5.3 mV/mW and 7.8 mV/mW in the air and vacuum for the inputs of inside and outside heaters, indicating that the thermal sensitivities in the vacuum, where there is rarely thermal loss caused by gas, are higher than those in the air. The ac-dc voltage and current transfer difference ranges of the converter with single bifilar heater were about ${\pm}1.80\;ppm$ and ${\pm}0.58\;ppm$, and those of the converter with dual bifilar heater were about ${\pm}0.63\;ppm$ and ${\pm}0.25\;ppm$, and about ${\pm}0.53\;ppm$ and ${\pm}0.27\;ppm$, respectively, for the inputs of inside and outside heaters, in the frequency range below 10 kHz and in the air.

• The Journal of Korean Academy of Prosthodontics
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• v.38 no.5
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• pp.704-723
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• 2000

This study was undertaken to evaluate the tensile bond strength of In-Ceram alumina core treat-ed by ion assisted reaction(IAR). Ion assisted reaction is a prospective surface modification technique without damage by a keV low energy ion beam irradiation in reactive gas environments or reactive ion itself. 120 In-Ceram specimens were fabricated according to manufacturer's directions and divided into six groups by surface treatment methods of In-Ceram alumina core. SD group(control group): sandblasting SL group: sandblasting + silane treatment SC group: sandblasting + Siloc treatment IAR I group: sandblasting + Ion assisted reaction with argon ion and oxygen gas IAR II group: sandblasting + Ion assisted reaction with oxygen ion and oxygen gas IAR III group: sandblasting + Ion assisted reaction with oxygen ion only For measuring of tensile bond strength, pairs of specimens within a group were bonded with Panavia 21 resin cement using special device secured that the film thickness was $80{\mu}m$. The results of tensile strength were statistically analyzed with the SPSS release version 8.0 programs. Physical change like surface roughness of In-Ceram alumina core treated by ion assistad reaction was evaluated by Contact Angle Measurement, Scanning Electron Microscopy, Atomic Force Microscopy; chemical surface change was evaluated by X-ray Photoelectron Spectroscopy. The results as follows: 1. In tensile bond strength, there were no statistically significant differences with SC group, IAR groups and SL group except control group(P<0.05). 2. Contact angle measurement showed that wettability of In-Ceram alumina core was enhanced after IAR treatment. 3. SEM and AFM showed that surface roughness of In-Ceram alumina core was not changed after IAR treatment. 4. XPS showed that IAR treatment of In-Ceram alumina core was enabled to create a new functional layer. A keV IAR treatment of In-Ceram alumina core could enhanced tensile bond strength with resin cement. In the future, this ion assisted reaction may be used effectively in various dental materials as well as in In-Ceram to promote the bond strength to natural tooth structure.

• Membrane Journal
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• v.13 no.3
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• pp.162-173
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• 2003

The pseudo n-type polyaniline was prepared by doping of camphorsulfonic acid(CSA) and dodecylbenzenesulfonic acid(DBSA) as the dopants in solvent of N-methyl-2-pyrrolidinone(NMP). The dopants in polymer structure was qualitatively analyzed using FT-IR. The influence on electrochemical properties with dopant concentration of PANI film were investigated. The electrochemical characteristics of the n-type PANI electrode that coated on ITO were evaluated by cyclic voltammetry(CV) and AC impedance method. The prepared PANI were confirmed as n-type PANI from FT-IR and CV. The charge transfer resistance of film on PANI/CSA electrode were measured as 1.14{\sim}1.09k{\mu}$by AC impedance. The charge transfer resistance of PANI/DBSA electrode decreased with increasing the mole ratio of DBSA as 27.73{\sim}8.37 k{\mu}$. The double layer capacitance of PANI/CSA electrode was showed almost constant value as $13.47{\sim}14.59 {\mu}F$ and that of PANI/DBSA electrode increased with increasing mole ratio of DBSA from 0.49 to $1.20 {\mu}F$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.587-592
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• 2010

We have fabricated schottky barrier diode (SBDs) using polar (c-plane) and non polar (a-, m-plane) n-type 6H-SiC wafers. Ni/SiC ohmic contact was accomplished on the backside of the SiC wafers by thermal evaporation and annealed for 20minutes at $950^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The specific contact resistance was $3.6{\times}10^{-4}{\Omega}cm^2$ after annealing at $950^{\circ}C$. The XRD results of the alloyed contact layer show that formation of $NiSi_2$ layer might be responsible for the ohmic contact. The active rectifying electrode was formed by the same thermal evaporation of Ni thin film on topside of the SiC wafers and annealed for 5 minutes at $500^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The electrical properties of SBDs have been characterized by means of I-V and C-V curves. The forward voltage drop is about 0.95 V, 0.8 V and 0.8 V for c-, a- and m-plane SiC SBDs respectively. The ideality factor (${\eta}$) of all SBDs have been calculated from log(I)-V plot. The values of ideality factor were 1.46, 1.46 and 1.61 for c-, a- and m-plane SiC SBDs, respectively. The schottky barrier height (SBH) of all SBDs have been calculated from C-V curve. The values of SBH were 1.37 eV, 1.09 eV and 1.02 eV for c-, a- and m-plane SiC SBDs, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.37-43
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• 1999

Modules of the system that requires large capacity and high-speed information processing are implemented in the form of MCM that allows high-speed data processing, high density circuit integration and widely applied to such fields as ATM, GPS and PCS. Hence we developed the ATM switching module that is consisted of three chips and 2.48 Gbps data throughput, in the form of 10 multi-layer by Cu/Photo-BCB and 491pin PBGA which size is $48 \times 48 \textrm {mm}^2$. hnologies required for the development of the MCM includes extracting parameters for designing the substrate/package through the interconnect characterization to implement the high-speed characteristics, thermal management at the high-density MCM, and the generation of the testability that is one of the most difficult issues for developing the MCM. For the development of the ATM Switching MCM, we extracted signaling delay, via characteristics and crosstalk parameters through the interconnect characterization on the MCM-D. For the thermal management of 15.6 Watt under the high-density structure, we carried out the thermal analysis. formed 1.108 thermal vias through the substrate, and performed heat-proofing processing for the entire package so that it can keep the temperature less than $85^{\circ}C$. Lastly, in order to ensure the testability, we verified the substrate through fine pitch probing and applied the Boundary Scan Test (BST) for verifying the complex packaging/assembling processes, through which we developed an efficient and cost-effective product.

• Korean Chemical Engineering Research
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• v.57 no.1
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• pp.111-117
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• 2019

This study proposed the fabrication and deposition of high purity crystalline $core-TiO_2/shell-Al_2O_3$ nanoparticles. Morphological properties of $core-TiO_2$ and coated $shell-Al_2O_3$ were confirmed by transmission electron microscope (TEM) and transmission electron microscope - energy dispersive spectroscopy (TEM-EDS). The electrical properties of the prepared $core-TiO_2/shell-Al_2O_3$ nanoparticles were evaluated by applying them to a working electrode of a Dye-Sensitized Solar Cell (DSSC). The particle size, growth rate and the main crystal structure of $core-TiO_2$ were analyzed through dynamic light scattering system (DLS), scanning electron microscope (SEM) and X-ray diffraction (XRD). The $core-TiO_2$, which has a particle size of 17.1 nm, a thin film thickness of $20.1{\mu}m$ and a main crystal structure of anatase, shows higher electrical efficiency than the conventional paste-based dye-sensitized solar cell (DSSC). In addition, the energy conversion efficiency (6.28%) of the dye-sensitized solar cell (DSSC) using the $core-TiO_2/shell-Al_2O_3$ nanoparticles selectively controlled to the working electrode is 26.1% higher than the energy conversion efficiency (4.99%) of the dye-sensitized solar cell (DSSC) using the conventional paste method.

• Applied Chemistry for Engineering
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• v.3 no.1
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• pp.88-99
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• 1992

For the development of semiconducting photoelectrode to be more stable and efficient in the process of photoelectrolysis of the water, pure titanium rods were oxidized by anodic oxidation, furance oxidation and flame oxidation and used as electrodes. The Indium islands were formed by electrodeposition of "In" thin film on $TiO_2$ and Ti by electrodeposition. Also $A1_2O_3$ and NiO islands were coated on Ti by the electron-beam evaporation technique. The maximum photoelectrochemical conversion efficiency(${\eta}$) was 0.98% for flame oxidized electrode($1200^{\circ}C$ for 2min in air). Anodically oxidized electrodes have photoelectrochemical conversion efficiency of 0.14%. Furnace oxidized electrode($800^{\circ}C$ for 10min in air) has 0.57% of photoelectrochemical efficiency and shows a band-gap energy of about 2.9eV. The $In_2O_3$ coated $TiO_2$ exhibits 0.8% of photoelectrochemical efficiency but much higher value of ${\eta}$ was obtained with the Increase of applied blas voltage. However, $Al_2O_3$ or NiO coated $TiO_2$ shows much low value of ${\eta}$. The efficiency was dependent on the presence of the metallic interstitial compound $TiO_{0+x}$(x<0.33) at the metal-semiconductor interface and the thickness of the suboxide layer and the external rutile scale.

• The Korean Journal of Physiology
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• v.2 no.2
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• pp.63-73
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• 1968

It is well known that mammalian alveolar membrane is covered with a very thin layer of surfactant film which characteristically reduces surface tension of alveolar membrane, and maintains alveolar stability. Since Clements in 1957 demonstrated that the surfactant is extractable by mincing the lung tissue in saline, various studies on the subject have been succeeded by many workers. However, the effect of radiation on the surfactant is not well clarified. Present study was attempted to observe the effect of x-irradiation on the activity of surfactant in rabbits. X-ray in dose of 300 r, 600 r or 900 r was irradiated to the chest of rabbits. The lung was removed from normal or irradiated rabbits sacrificed by arterial blood shedding, and lung-saline extract, adding 3 grams of lung tissue to 50 mili-liters of saline, was prepared by means of Vertis homogenizer. Tension-area diagram of lung extract was recorded automatically by a modified Langmuir-Wilhelmy balance with a synchronized recording system designed in this department. The surface tension of lung extract was measured at 1st, 2 nd, 3 rd, 7 th and 15 th post-radiation day in 300 r irradiated group, at 3 rd, 7 th and 15 th post-radiation day in 600 r irradiated group, 3 rd and 7 th post-radiation day in 900 r irradiated group respectively. For the histo-pathological study, lung tissue preparations were made in all irradiatiated groups on the day of experiment and in normal group. The results obtained are summarized as follows: 1. The minimal surface tension, maximal surface tension and stability index of normal rabbits lung extracts were 7.68 dynes/cm, 38.84 dynes/cm, and 1.39 respectively. 2. The activity of surfactant was depressed prominently by x-irradiation. However, increase in the dose of x-irradiation did not show any significant change in the degree of surfactant activity suppression. The most marked depression in surfactant was observed at the third post-radiation day in all irradiated groups. 3. Activity of surfactant depressed by x-irradiation showed a tendency of recovering to normal on 15 th post-radiation day. 4. The tendency of change in activity of surfactant following x-irradiation was somewhat correlative with histo-pathological changes. But the degree of depression of surfactant by x-irradiation did not correspond to the degree of histo-pathological changes, and recovery of lung tissue from radiation damage, tissue edema and congestion, seemed to be followed by restoration of surfactant activity. 5. The width of the tension-area diagram was measured at the surface area of 40% in lung extract of normal and x-irradiated rabbits. And it was found that the changes of the width corresponded well with that of minimum surface tension and of stability index in all normal and x-irradiated groups.

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.135-138
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• 2007

In this study, we investigated the electro-optical (EO) characteristic of fringe-field switching (FFS) mode cell by the two kinds of ultraviolet (UV) alignment method on the organic thin film (polyimide: PI). The suitable organic layers for FFS cell and the aligning capabilities of nematic liquid crystal (NLC) using the in-situ photoalignment method were studied; Disclination is observed after conventional photoalignment method for 1h, and in-situ photoalignment method for 1h. Monodomain alignment of the NLC can be observed via insitu photo alignment method for 2 h and 3 h. It is considered that NLC alignment is due to photo-depolymerization of the polymer with oblique non-polarized UV irradiation on PI surface. An unstable V-T curve of UV-aligned FFS-LCD with conventional photoalignment method can be achieved. However, a stable V-T curve of UV-aligned FFS-LCD with in-situ photoalignment method (1 h), and V-T curve of UV-aligned FFS-LCD with in-situ photo alignment method was much stable comparing with that of other UV-aligned FFSLCD's. As a result, more stable EO performance of UV-aligned FFS-LCD with in-situ photoalignment method for 3h is obtained than that of the other UV-aligned FFS-LCD's.

• Solar Energy
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• v.20 no.2
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• pp.43-54
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• 2000

We prepared and characterized $Cu(In_{1-x}Ga_x)Se_2$(CIGS) films using a elemental co-evaporation method for absorbing layer of high efficiency thin film solar cells. The CIGS films deposited on a soda-lime glass exhibited low resistivity because of higher carrier concentration. Na was accumulated at the CIGS surface and the 0 and Se were also accumulated at the surface, suggesting that oxidation is a driving force of Na accumulation. The structure of CIGS film was modified or a secondary phase was formed in the Cu-poor CIGS bulk films probably due to the incorporation of Na into Cu vacancy sites. As the Ga/(In+Ga) ratio increased, the diffraction peaks of $Cu(In_{1-x}Ga_x)Se_2$ films were shifted to larger angle and splitted, and the grain size of $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films became smaller. All $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films showed the p-type conductivity regardless of the Ga/(In+Ga) ratio. Ag/n-ZnO/i-ZnO/CdS/$Cu_{0.91}(In_{0.7}Ga_{0.3})Se_2$/Mo solar cells were fabricated. The currently best efficiency in this study was 14.48% for $0.18cm^2$ area ($V_{oc}=581.5mV,\;J_{sc}=34.88mA$, F.F=0.714).