• Journal of the Korean Society for Precision Engineering
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• v.34 no.2
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• pp.107-114
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• 2017

In this investigation, we describe a metrological technique for surface and thickness profiles of a silicon (Si) wafer by using a 6 degree of freedom (DOF) stitching method. Low coherence scanning interferometry employing near infrared light, partially transparent to a Si wafer, is adopted to simultaneously measure the surface and thickness profiles of the wafer. For the large field of view, a stitching method of the sub-aperture measurement is added to the measurement system; also, 6 DOF parameters, including the lateral positioning errors and the rotational error, are considered. In the experiment, surface profiles of a double-sided polished wafer with a 100 mm diameter were measured with the sub-aperture of an 18 mm diameter at $10\times10$ locations and the surface profiles of both sides were stitched with the sub-aperture maps. As a result, the nominal thickness of the wafer was $483.2{\mu}m$ and the calculated PV values of both surfaces were $16.57{\mu}m$ and $17.12{\mu}m$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.12-12
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• 2010

The hall probe measurement system was used to measure the critical current distribution of superconducting coated conductor. The system consists of reel to reel moving apparatus, 7 array hall probe, a rotary encoder and permanent magnet. The magnetic field profile across the width of superconducting coated conductor using Bean's critical state model was calculated. The effect of various parameters of the formulas on the magnetic field distribution and the effect of shape and size of artificial defects, which were formed on the surface of SmBa2Cu3O7-d(SmBCO) coated conductor using laser marking system, on the hall probe magnetic field signal of the hall probe measurement system was investigated.

• Journal of the Korean Recycled Construction Resources Institute
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• v.9 no.4
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• pp.499-505
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• 2021

The purpose of this study is to investigate experimentally the physical/chemical properties of concrete surface according to types of formworks. Plywood formwork and coated plywood formwork were prepared. In addition, plywood formwork with sand paper was prepared to simulate deterioration of concrete or rough surface of concrete. Normal concrete was used in this study. The properties of concrete surface were investigated by visual inspection, scanning electron microscopy and energy-dispersive X-ray spectroscopy techniques, elemental mapping, 2D and 3D surface profile measurement, and zeta potential measurement. Test results showed that concrete in a coated formwork had smooth surface and concrete in the formwork with sand paper had rough surface. It was observed that properties of concrete surface depended on types of formworks. Furthermore, differences in surface roughness were significantly higher than those in chemical compositions and zeta potential.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.3
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• pp.199-205
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• 2014

We propose a new variant of lateral shearing interferometer with a tunable laser source that enables 3D surface profile measurements of freeform optics with high speed, high vertical resolution, large departure, and large field-of-view. We have verified the proposed technique by comparing our measurement result with that of an existing technique and measuring a representative sample of freeform optics. Moreover, we propose a new algorithm that is able to compensate the rotational inaccuracy.

• Journal of the Optical Society of Korea
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• v.18 no.1
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• pp.37-44
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• 2014

The use of a laser interferometer as a metrological tool in micro-optics measurement is demonstrated. A transmissive interferometer is effective in measuring an optical specimen having a high angle slope. A configuration that consists of an optical resolution of 0.62 micron is adapted to measure a specimen, which is a micro-Fresnel lens-shaped lenticular lens. The measurement result shows a good repeatability at each fraction of facets, however, a reconstruction of the lens shape profile is disturbed by a known problem of $2{\pi}$-ambiguity. To solve this $2{\pi}$-ambiguity problem, we propose a two-step phase unwrapping method. In the first step, an unwrapped phase map is obtained by using a conventional unwrapping method. Then, a proposed unwrapping method based on the shape modeling is applied to correct the wrongly unwrapped phase. A measured height of each facet is compared with a profile result measured by AFM.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.6
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• pp.1163-1168
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• 2001

The ranging systems measure range data in three-dimensional coordinate from target surface. These non-contact remote ranging systems is widely used in various automation applications, including military equipment, construction field, navigation, inspection, assembly, and robot vision. The active ranging systems using time of flight technique or light pattern illumination technique are complex and expensive, the passive systems based on stereo or focusing principle are time-consuming. The proposed algorithm, that is based on cross correlation of projection profile of vertical edge, provides advantages of fast and simple operation in the range acquisition. The results of experiment show the effectiveness of the proposed algorithm.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.12
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• pp.46-53
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• 1997

The TMA gas sensors are fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. The hall effect measurement and AES analysis are carried out to investigate the effects of the sputtering gases and dopants which effect on the electrical resistivity and sensitivity to TMA gas. We measure the cfhanges of the surface carrier concentration, haall electron mobility, electrical resistivity, surface condition, and depth profile of the films. The ZnO-based thin film sensors sputtered in oxygen, or added with dopants showed a high sruface carrier concentration, film sensors sputtered in oxygen and doped with 4.0 wt.% $Al_{2}$O$_{3}$, 1.0 wt.% TiO$_{2}$, and 0.2 wt% v$_{2}$O$_{5}$ showed the highest surface carrier concentration of 5.952 * 10$^{20}$ cm$^{-3}$ , hall electron mobility of 176.7 cm$^{2}$/V.s, lowest electrical resistivity of 6*10$^{-5}$ .ohm.cm and highest sensitivity of 12. These results were measured at a working temperature of 300.deg. C to 8 ppm TMA gas.

• Korean Journal of Materials Research
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• v.33 no.3
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• pp.106-114
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• 2023

The carbon concentration in the carburized steels was measured by electron probe microanalysis (EPMA) for a range of soluted carbon content in austenite from 0.1 to 1.2 wt%. This study demonstrates the problems in carbon quantitative analysis using the existing calibration curve derived from pure iron (0.008 wt%C) and graphite (99.98 wt%C) as standard specimens. In order to derive an improved calibration curve, carbon homogenization treatment was performed to produce a uniform Kα intensity in selected standard samples (AISI 8620, AISI 4140, AISI 1065, AISI 52100 steel). The trend of detection intensity was identified according to the analysis condition, such as accelerating voltage (10, 15, 30 keV), and beam current (20, 50 nA). The appropriate analysis conditions (15 keV, 20 nA) were derived. When the carbon concentration depth profile of the carburized specimen was measured for a short carburizing time using the improved calibration curve, it proved to be a more reliable and accurate analysis method compared to the conventional analysis method.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.80-81
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• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.1417-1422
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• 2005

Among the sensors mainly used for displacement measurement, there are a linear CCD(Charge Coupled Device) and a PSD(Position Sensitive Detector) as a non-contact type. Their structures are different very much, which means that the signal processing of both sensors should be applied in the different ways. Most of the displacement measurement systems to get the 3-D shape profile of an object using a linear CCD are a computer-based system. It means that all of algorithms and mathematical operations are performed through a computer program to measure the displacement. However, in this paper, the developed system has microprocessor and other digital components that make the system measure the displacement of an object without a computer. The thing different from the previous system is that AVR microprocessor and FPGA(Field Programmable Gate Array) technology, and a comparator is used to play the role of an A/D(Analog to Digital) converter. Furthermore, an ATC(Automatic Threshold Control) algorithm is applied to find the highest pixel data that has the real displacement information. According to the size of the light circle incident on the surface of the CCD, the threshold value to remove the noise and useless data is changed by the operation of AVR microprocessor. The total system consists of FPGA, AVR microprocessor, and the comparator. The developed system has the improvement and shows the better performance than the system not using the ATC algorithm for displacement measurement.