• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.129-157
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si-doped GaAs crystals for photonic devices [1], and low-dislocation-density low-residual-strain 4-inch to 6-inch [2, 3] semi-insulating GaAs crystals for electronic devices by Vertical Boat (VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than that of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• Journal of Welding and Joining
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• v.32 no.2
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• pp.4-8
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• 2014

In this research, GTA overlay welding system is developed for inside of straight pipes in various diameter. It can be applied to oil, ship building and plant industry, especially pipes connected to pressure vessels, for the purpose of cost reduction by cladding inside of pipes with corrosion and heat resistant alloys such as stainless steel or Inconel. Developed system consists of GTA power source, torch, wire feeding system, automatic arc length adjusting device, CCD camera and cooling unit. Two types of pipe inside overlay welding system are developed. One is for maximum 3m pipe length with 3 inch ~ 12 inch pipe outer diameter. Another type can be applied to maximum 12m pipe length with 7 ~ 24 inch OD. Developed system successfully produced inside cladded pipe and the results are shown through cross sectional images of the pipes.

• Journal of the Korean Society of Propulsion Engineers
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• v.18 no.3
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• pp.70-77
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• 2014

In this paper, the development of unique model of the 2.75 inch rocket propulsion system is described. Recently developed korean 2.75 inch rocket propulsion system shows the improvement of a flame stability resulted from a change in the configuration of propellant grain, and of an incidental ignition protection function using the EMI(electromagnetic interference) filter on ignition system. Moreover it is shown that a directional flight stability is improved by increasing the number of fins and changing the nozzle configuration. Static firing test and thermal shock test were conducted for the validation before flight, and flight test of 210 rounds of rockets was conducted to verify the trajectory uniformity. In addition, intellectual property issues can be overcome with the unique korean 2.75 inch rocket motor as well as the performance improvement.

• Plant Journal
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• v.10 no.2
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• pp.48-59
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• 2014

Coupons which have same figure as weld joint of the forged steel valves and 1 inch nominal weld thickness were manufactured using ASTM A182 F92 material. After welding with GTAW method, the welded specimens have been post-weld heat treated at $705^{\circ}C$, $735^{\circ}C$, $750^{\circ}C$, $765^{\circ}C$, $795^{\circ}C$ and $825^{\circ}C$ for 1 hour per 1 inch nominal weld thickness each (Group 1) to evaluate characteristics of welds based on various holding temperature. Indeed, 3 welded specimens were post-weld heat treated for 30 minutes, 1 hour and 2 hour (Group 2) at $735^{\circ}C$ to evaluate characteristics of welds based on various holding time. Hardness values were measured at the weld metal, heat affected zone and base metal to observe hardness change depending on the condition. As a result of the evaluation, appropriate holding temperature for PWHT is proved as $750^{\circ}C$ and $765^{\circ}C$ for 1hour per 1 inch nominal weld thickness. Indeed, holding for 1 hour per 1 inch nominal weld thickness was insufficient for PWHT effect when the holding temperature was at $735^{\circ}C$. The microstructure of post-weld heat treated weld metal was determined as tempered-martensite structure.

• The korean journal of orthodontics
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• v.22 no.3 s.38
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• pp.647-656
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• 1992

The purpose of this study was to evaluate the elastic memory process in cold worked stainless steel wire and the effect of heat treatment on it. 0.018 inch round and $0.019\times0.025$ inch rectangular wire (ORMCO stainless wire) were used in this study. Each wire type had 4 groups: non-heat treatment group, furnace heat treatment group, electric current heat treatment group, and bending after heat treatment group. Each group was consisted of 10 specimens. With the Jig, each wire was bent into v-shape uniformly, and width of two free ends of each v-shaped wire was measured by caliper (to the point of 0.1 mm correctly) at time interval of offjig, after heat treatment, 1, 2, 3, 4 hours, 1, 2, 3, 4, 5, 6 days, 1, 2, 3, 4 weeks after. The results were as follows: 1. In non-heat treatment group and bending after heat treatment group, elastic memory process was occured $60\%$ within 1 hour, and more than $90\%$ within 1 week. 2. In furnace and electric current heat treatment group, almost all elastic memory process was occured during teat treatment, and then specimen was stabilized dimensionally. 3. Magnitude of deformation by elastic memory was greater in heat treatment group than non heat treatment group and bending after heat treatment group. 4. There was no remarkable difference in deformation pattern between 0.018 inch round wire and $0.019\times0.025$ inch rectangular wire.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.99-99
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• 2010

Recently, amorphous transparent oxide semiconductors (TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). The TOS TFTs using a-IGZO channel layers exhibit a high electron mobility, a smooth surface, a uniform deposition at a large area, a high optical transparency, a low-temperature fabrication. In spite of many advantages of the sputtering process such as better step coverage, good uniformity over large area, small shadow effect and good adhesion, there are not enough researches about characteristics of a-IGZO thin films. In this study, therefore, we focused on the electrical properties of a-IGZO thin films as a channel layer of TFTs. TFTs with the a-IGZO channel layers and Y2O3 gate insulators were fabricated. Source and drain layers were deposited using ITO target. TFTs were deposited on unheated non-alkali glass substrates ($5cm{\times}5cm$) with a sintered ceramic IGZO disc (3 inch $\varnothing$, 5mm t), Y2O3 disc (3 inch $\varnothing$, 5mm t) and ITO disc (3 inch $\varnothing$, 5mm t) as a target by magnetron sputtering method. The O2 gas was used as the reactive gas. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of a-IGZO thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.387-390
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• The korean journal of orthodontics
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• v.41 no.6
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• pp.399-410
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• 2011

Objective: The purpose of this study was to evaluate the difference in frictional resistance among metal, ceramic, self-ligation brackets and coated or non-coated Ni-Ti archwires at various bracket-archwire angulations during the sliding movement of an orthodontic archwire, using an orthodontic sliding simulation device. Methods: Four types of bracket (Micro-arch Perpect Clear2 Clippy-C and Damon3 and 5 types of orthodontic archwire (0.014", 0.016", and 0.016" ${\times}$ 0.022" inch coated Ni-Ti, and 0.016" and 0.016" ${\times}$ 0.022" inch Ni-Ti) were used. Further, the bracket- archwire angles were set at 4 different angulations: $0^{\circ}$, $3^{\circ}$, $6^{\circ}$, and $9^{\circ}$. Results: The frictions from all the experimental groups were found to be significantly increased in order of self-ligation brackets, Micro-arch and Perpect Clear2 ($p$ < 0.001). The presence of a coat had no effect on the friction of the same sized archwires at $0^{\circ}$ and $3^{\circ}$ bracket-archwire angles ($p$ < 0.001). Coated archwires had significantly higher frictions than the same sized non-coated archwires at $6^{\circ}$ and $9^{\circ}$ bracket-archwire angles ($p$ < 0.001). The frictions increased significantly as the bracket-archwire angles were increased ($p$ < 0.001). Conclusions: The use of self-ligation brackets will be beneficial in clinical situations where a low frictional force is required. Further, in cases where crowding is not severe, the use of coated archwires should not cause problems. However, more additional explanation is required considering the fact that the damage of coated archwire and exposure of the metal portion in case of binding and notching and the effects of saliva were not taken into account.

• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.761-763
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• 2002

실리콘 웨이퍼 성장에 유리한 수평자장형 마그네트에는 saddle type, cylinder type 등 여러 가지 종류가 있다. 이러한 종류의 마그네트를 사양을 바꿔가며 균일도, 중심자장, 권선에 사용되는 선재량 등을 비교하였다. 해석 tool은 'opera-3d'을 사용하였으며, 기본적인 사양은 실제 System에서 요구되는 수치를 토대로 결정하였다. 본 연구를 토대로 12inch 단결정 성장을 위한 마그네트 종류와 사양 그리고 Cryostat의 기본적인 크기와 두께를 결정하게 되었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.535-541
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si doped GaAs crystals for photonic devices, and low-dislocation-density low-residual-strain 4-inch to 6-inch semi-insulating GaAs crystals for electronic devices by Vertical Bridgman(VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.