• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.31.1-31
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• 2003

• 디지털융복합연구
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• 제12권7호
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• pp.349-356
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• 2014

본 연구는 맥동전자장이 고지혈증 관련 혈액 성분, 항산화 효소와 활성 산소에 어떠한 영향을 미치는 지를 관찰하기 위하여 실시하였다. 실험군은 정상식이군, 고지방식이군과 고지방식이-맥동전자장 적용군의 3군으로 나누었다. 맥동 전자장은 맥동 전자장 에너지 치료기를 이용하였다. 혈액 성분의 검사 항목은 혈당, 유리지방산, 중성지방 및 콜레스테롤, 인슐린이고, 항산화 효소와 활성 산소의 검사는 글루타치온, 글루타치온 환원효소, 크산틴, 과산화지질을 측정하였다. 그 결과 맥동전자장 적용은 혈액 구성성분과 GSH와 GRD를 고지장식이 수준에서 정상식이 수준으로 상승시켰으며, XO와 MDA는 고지방식이 수준에서 정상 식이 수준으로 낮추어 주는 개선효과를 나타내었다. 그러므로 맥동전자장의 적용은 고지혈증 흰쥐의 혈액성분의 변화, 항산화 효소의 증가, 활성 산화의 억제에 효과적인 치료 방법이라 할 수 있다.

• Archives of Pharmacal Research
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• 제2권2호
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• pp.111-114
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• 1979

Diazepam was investigated in aqueous buffer media using pulsed rotation voltammetry. The dependence of half-wave potentials on pH indicated a two proton involvement in a two electron transfer reduction in the pH range 3-10. Dizaepam at micromolar concentration levels may be determined by measurement of the limiting difference current.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.319-322
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• 2004

ZnO nanostructures were formed on a Si substrate by off-axis pulsed laser deposition(PLD) system in which a substrate plane was tilted toward a plume propagation direction. Atomic force microscopy (AFM) showed islands of 20∼40 nm width. From the x-ray diffraction (XRD) pattern exhibiting only (002) ZnO peak, the islands observed in AFM image were found to well crystallized. Optical bandgap enlargement from 3.26 eV to 3.35 and 3.47 eV due to the quantum size effect of ZnO nanostructures were observed by Photoluminescence (PL) at room temperature.

• 한국가시화정보학회:학술대회논문집
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• 한국가시화정보학회 2002년도 추계학술대회 논문집
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• pp.43-44
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• 2002

A pulsed jet was measured with high-definition 3D-PTV technique. The measurement system consists of three CCD cameras, Ar-ion laser, an image grabber and a host computer. Two fitness functions were introduced in a genetic algorithm in order to enhance the correspondences of the particles. One was based on a concept of the continuum theory and the other one was based on a minimum distance error. The head vortex of the jet was visualized by LIF and was reconstructed by the constructed high-resolution 30-PTV system for comparisons.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.362-364
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• 2001

The pulsed laser deposition(PLD) technology was used for the deposition of phosphor substance, Gd$_2$O$_3$on commercial glass. An Nd:YAG laser was employed for the deposition (wavelength 266nm, energy up to 100mJ/pu1se, pulse duration is 5ns and repetition rate 10 Hz). With respect to films grown by conventional PLD, this study exhibited the condition at normal temperature. Experiments were done without any reactive gas at a pressure of 10$^{-5}$ ~10$^{-6}$ Torr using second harmonic(λ=532 nm) and fourth harmonic(λ=266 nm) Nd:YAG laser. Analyses of the deposited material grown are performed by EDX, AFM, SEM, PL meseurements.

• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.105-108
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• 2005

The Pb(Zr,Ti)O$_3$ thin films were fabricated with Pb(La,Ti)O$_3$ buffers in-situ onto Pt/Ti/SiO$_2$/Si substrates by pulsed laser deposition method. We have observed the increase of the remanent polarization using PLT buffers. The remanent polarization value of 33.4 $\mu$C/$\textrm{cm}^2$ and the coercive field value of 66.4 kV/cm were obtained when the PLT tufter was deposited for 15 seconds. Enhancement of the polarization is resulted from the enhanced orientation of PZT thin film because of the PLT buffet layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.67-69
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• 2004

The $Pb(Zr,Ti)O_3$ thin films were fabricated with $Pb(La,Ti)O_3$ buffers in-situ onto $Pt/Ti/SiO_2/Si$ substrates by pulsed laser deposition technique using a Nd:YAG laser with energy density of $2.5J/cm^2$, and deposited for 10 minutes at $550^{\circ}C$ of substrate temperature. And then, the films have been annealed at $550^{\circ}C$ in oxygen ambient pressure. The remanent polarization value is increased by using buffer layers but coercive field of films is slightly increased.

• 한국전기전자재료학회논문지
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• 제11권2호
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• pp.133-137
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• 1998

$(Pb_{0.72}La_{0.28})Ti_{0.93}O_3(PLT(28))$ thin films were fabricated by pulsed laser deposition. PLT films deposited on $Pt/Ti/SiO_2/Si$ at $600^{\circ}C$ had a preferred orientation in (111) plane and at $550^{\circ}C$ had a (100) preferred orientation. We found that (111) preferred oriented films had well grown normal to substrate surface. This PLT(28) thin films of $1{\mu}m$ thickness had dielectric properties of ${\varepsilon}_r$=1300, dielectric $loss{\fallingdotseq}0.03 $. and had charge storage density of 10 [${\mu}C/cm^2$] and leakage current density of less than $10^{-6}[A/cm^2]$ at 100[kV/cm]. These results indicated that the PLT(28) thin films fabricated by pulsed laser deposition are suitable for DRAM capacitor application.

• 한국진공학회지
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• 제17권5호
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• pp.455-460
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• 2008

최근까지 유기박막의 제조에 있어서 진공 증착 혹은 스핀코팅법의 대체방법으로 펄스 레이져 증착법 (PLD: Pulsed laser deposition)에 많은 관심이 되고 있는 실정이다. 본 논문에서는 유기발광소자(OLED)의 제작을 위해 $Alq_3$(aluminato-tris-8-hydroxyquinolate)와 TPD의 유기물을 질소($N_2$)분위기 상태에서 KrF($\lambda$=278 nm) 엑시머 레이저를 이용한 PLD법으로 증착하였고, 증착공정변화에 따른 증착된 박막의 분자 및 광학적 특성의 효과를 PL과 FT-IR등을 이용하여 평가하였다.