• 한국표면공학회지
• /
• 제36권2호
• /
• pp.148-154
• /
• 2003

Short ($\tau$=40 $mutextrm{s}$) and high-voltage ($U_{sub}$=2~8 kV) negative substrate bias pulses were used to assist pulsed magnetron sputtering DLC films deposition. Space- and time-resolved probe measurements of the plasma characteristics have been performed. It was shown that in case of high-voltage substrate bias spatial non-uniformity of the magnetron discharge plasma density greatly affected DLC deposition process. By Raman spectroscopy it was found that maximum percentage of s $p^3$-bonded carbon atoms (40 ~ 50%) in the coating was attained at energy $E_{c}$ ~700 eV per deposited carbon atom. Despite rather low diamond-like phase content these coatings are characterized by good adhesion due to ion mixing promoted by high acceleration voltage. Short duration of the bias pulses is also important to prevent electric breakdowns of insulating DLC film during its growth.wth.

• 한국전기전자재료학회논문지
• /
• 제21권9호
• /
• pp.818-824
• /
• 2008

The Separated Pulsed Laser Deposition (SPLD) technique uses two chambers that are separated by a conic metallic wall with a central orifice. The pressures of ablation chamber and deposition chamber were controlled by the differential vacuum system. We deposited zinc oxide (ZnO) thin films by SPLD method to obtain high quality thin films. When the bias voltage of +500 V was applied between a substrate and an orifice, the ZnO thin film was deposited efficiently. The deposited ZnO thin film at ablation chamber gas pressure of Ar 5 mTorr showed the sharpest ultraviolet absorption edge indicatory the band gap of about 3.1 eV. ZnO thin films were deposited using effect of electric and magnetic fields in the SPLD method. E${\times}$B drift happened by an electric fields and a magnetic fields, activated plasma plume, as a result the film surface became very smooth. When the bias voltage of +500 V and magnet of 0,1 T were applied the ZnO thin films surface state showed high quality. Grain size was 41.99 nm and RMS was 0.84 nm.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
• /
• pp.94-95
• /
• 2007

We have observed electrical properties of ZnO thin films for the fabrication of transparent thin film transistor. ZnO thin films were deposited on $Al_2O_3$(0001) substrate at various temperatures by pulsed laser deposition(PLD). The third of harmonic(355nm) Nd:YAG laser was used for pulsed laser deposition. X-ray diffraction(XRD), field emission-scanning electron microscope(FE-SEM), and photoluminescence were used to characterize physical and optical properties of ZnO thin film.. The results indicated the ZnO film showed good optical properties as increasing temperatures, with low FWHM of exciton-related peak and XRD(0002) peak.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.885-888
• /
• 2000

The effects of deposition temperature and post annealing process of ferroelectric PbZr$\sub$0.52/Ti$\sub$0.48/O$_3$(PZT) thin films by pulsed laser deposition (PLD) were investigated. The PZT thin films were deposited at 400, 450, 500, and 550$^{\circ}C$, with/without post annealing at 650$^{\circ}C$ for 30 min. The PZT thin films deposited above 500$^{\circ}C$ without post annealing were crystallized into peroveskite phase, but the PZT thin films deposited below 450$^{\circ}C$ had pyrochlore phase. The PZT thin films deposited below 450$^{\circ}C$ with post annealing also crystallized into pure perovskite. Compared to the PZT thin films which were deposited at 450$^{\circ}C$ and post annealed, the films deposited at 550$^{\circ}C$ have a columnar microstructure and high remnant polarization 28 (${\mu}$C/cm$^2$). With in-situ annealing at oxygen ambient, the PZT thin films reduced oxygen vacancies and increased retained polarization.

• 한국재료학회지
• /
• 제30권12호
• /
• pp.672-677
• /
• 2020

Expensive PCBN or ceramic cutting tools are used for the processing of difficult-to-cut materials such as Ti and Ni alloy materials. These tools have a problem of breaking easily due to their high hardness but low fracture toughness. To solve this problem, cutting tools that form various coating layers are used in low-cost WC-Co hard material tools, and researches on various tool materials are being conducted. In this study, WC-5, 10, and 15 wt%Ni hard materials for difficult-to-cut cutting materials are densified using horizontal ball milled WC-Ni powders and pulsed current activated sintering method (PCAS method). Each PCASed WC-Ni hard materials are almost completely dense, with a relative density of up to 99.7 ~ 99.9 %, after the simultaneous application of pressure of 60 MPa and electric current for 2 min; process involves almost no change in the grain size. The average grain sizes of WC and Ni for WC-5, 10, and 15 wt%Ni hard materials are about 1.09 ~ 1.29 and 0.31 ~ 0.51 µm, respectively. Vickers hardness and fracture toughness of WC-5, 10, and 15 wt%Ni hard materials are about 1,923 ~ 1,788 kg/mm2 and 13.2 ~ 14.3 MPa.m1/2, respectively. Microstructure and phase analyses of PCASed WC-Ni hard materials are performed.

• 대한금속재료학회지
• /
• 제47권5호
• /
• pp.316-321
• /
• 2009

Co nanoparticles on silica substrates were fabricated by inducing a thin-film dewetting through two different processes-furnace annealing and pulsed-laser annealing. The effects of annealing temperature, film thickness and laser energy density on dewetting morphology and mechanism were investigated. Co thinfilms with thicknesses between 3 to 15 nm were deposited using ion-beam sputtering, and then, in order to induce dewetting, thermally annealed in furnace at temperatures between 600 and $900^{\circ}C$. Some as-deposited films were irradiated using a Nd-YAG pulsed-laser of 266 nm wavelength to induce dewetting in liquid-state. Films annealed in furnace agglomerated to form nanoparticles above $700^{\circ}C$, and those average particle size and spacing were increased with an increase of film thickness. On the laser annealing process, above the energy density of $100mJ/cm^2$, metal films were completely dewetted and the agglomerated particles exhibited greater size uniformity than those on the furnace annealing process. A detailed dewetting mechanism underlaying both processes were discussed.

• 한국재료학회지
• /
• 제31권7호
• /
• pp.382-385
• /
• 2021

Well-crystallized vanadium pentoxide V₂O₅ thin films are fabricated on MgO single crystal substrates by using pulsed-laser deposition technique. The linear optical transmission spectra are measured and found to be in a wavelength range from 300 to 800 nm; the data are used to determine the linear refractive index of the V₂O₅ films. The value of linear refractive index decreases with increasing wavelength, and the relationship can be well explained by Wemple's theory. The third-order nonlinear optical properties of the films are determined by a single beam z-scan method at a wavelength of 532 nm. The results show that the prepared V₂O₅ films exhibit a fast third-order nonlinear optical response with nonlinear absorption coefficient and nonlinear refractive index of 2.13 × 10^-10 m/W and 2.07 × 10^-15 cm²/kW, respectively. The real and imaginary parts of the nonlinear susceptibility are determined to be 3.03 × 10^-11 esu and 1.12 × 10^-11 esu, respectively. The enhancement of the nonlinear optical properties is discussed.

• Journal of Yeungnam Medical Science
• /
• 제39권3호
• /
• pp.200-205
• /
• 2022

Pain from nervous or musculoskeletal disorders is one of the most common complaints in clinical practice. Corticosteroids have a high pain-reducing effect, and their injection is generally used to control various types of pain. However, they have various adverse effects including flushing, hyperglycemia, allergic reactions, menstrual changes, immunosuppression, and adrenal suppression. Pulsed radiofrequency (PRF) is known to have a pain-reducing effect similar to that of corticosteroid injection, with nearly no major side effects. Therefore, it has been widely used to treat various types of pain, such as neuropathic, joint, discogenic, and muscle pain. In the current review, we outlined the pain-reducing mechanisms of PRF by reviewing previous studies. When PRF was first introduced, it was supposed to reduce pain by long-term depression of pain signaling from the peripheral nerve to the central nervous system. In addition, deactivation of microglia at the level of the spinal dorsal horn, reduction of proinflammatory cytokines, increased endogenous opioid precursor messenger ribonucleic acid, enhancement of noradrenergic and serotonergic descending pain inhibitory pathways, suppression of excitation of C-afferent fibers, and microscopic damage of nociceptive C- and A-delta fibers have been found to contribute to pain reduction after PRF application. However, the pain-reducing mechanism of PRF has not been clearly and definitely elucidated. Further studies are warranted to clarify the pain-reducing mechanism of PRF.

• Nuclear Engineering and Technology
• /
• 제53권1호
• /
• pp.266-272
• /
• 2021

In the pulsed electron beam generators, such as plasma focus devices and linear induction accelerators whose electron pulse width is in the range of nanosecond and less, as well as in cases where there is no direct access to electron beam, like runaway electrons in Tokamaks, measurement of the electron energy spectrum is a technical challenge. In such cases, the indirect measurement of the electron spectrum by using the bremsstrahlung radiation spectrum associated with it, is an appropriate solution. The problem with this method is that the matrix equation between the two spectrums is an ill-conditioned equation, which results in errors of the measured X-ray spectrum to be propagated with a large coefficient in the estimated electron spectrum. In this study, a method based on the neural network and the MCNP code is presented and evaluated to recover the electron spectrum from the X-ray generated by collision of the electron beam with a target. Multilayer perceptron network showed good accuracy in electron spectrum recovery, so that for the X-ray spectrum with errors of 3% and 10%, the network estimated the electron spectrum with an average standard error of 8% and 11%, on all of the energy intervals.

• 센서학회지
• /
• 제11권6호
• /
• pp.371-377
• /
• 2002

$Y_2O_3:Eu^{3+}$ and Li-doped $Y_2O_3:Eu^{3+}$ thin films have been grown on sapphire substrates using a pulsed laser deposition technique. The thin film phosphors were deposited at a substrate temperature of $600^{\circ}C$ under the oxygen pressure of 100, 200 and 300 mTorr. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity and photoluminescence (PL) of the films are highly dependent on the oxygen pressure. The PL brightness data obtained from $Y_2O_3:Eu^{3+}$ films grown under optimized conditions have indicated that sapphire is one of the most promising substrate for the growth of high quality $Y_2O_3:Eu^{3+}$ thin film red phosphor. In particular, the incorporation of $Li^{+}$ ions into $Y_2O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with LiF-doped $Y_{1.84}Li_{0.08}Eu_{0.08}O_3(Y_2O_3LiEu)$, whose brightness was increased by a factor of 2.7 in comparison with that of $Y_2O_3:Eu^{3+}$ films. This phosphor may promise for application to the flat panel displays.