• ETRI Journal
• /
• v.11 no.2
• /
• pp.109-119
• /
• 1989

Based on the 2-dimensional charge-control simulation[4], a purely analytical model for MODFET's is proposed. In this model, proper treatment of the diffusion effect in the 2-DEG transport due to the gradual channel opening along the 2-DEG channel was made to explain the enhanced mobility and increased thershold voltage. The channel thickness and gate capacitance are experssed as functions of gate vlotage including subthreshold characteristics of the MODFET's analytically. By introducing the finite channel opening and an effective channel-length modulation, the slope of the saturation region of the I-V curves was modeled. The smooth transition of the I-V curves from linear-to-saturation region of the I-V curves was possible using the continuous Troffimenkoff-type of field-dependent mobility. Furthermore, a correction factor f was introduced to account for the finite transtition section forming between the GCA and the saturated section. This factor removes the large discrepanicies in the saturation region fo the I-V curves presicted by existing 1-dimensional models. The fitting parameters chosen in our model were found to be predictable and vary over relatively small range of values.

• Proceedings of the KAIS Fall Conference
• /
• 2004.06a
• /
• pp.162-164
• /
• 2004

슈뢰딩거와 포아송 방정식의 연계풀이에 의해 수치해석적으로 구한 파동함수와 에너지 준위를 이용하여 $300^{\circ}$K에서 사각우물을 형성하는 $Al_xGa_{1-x}As/Ga_yIn_{l-y}As/GaAs$ HEMT 소자 채널 영역에서의 극성광학 포논, 음향 포논, 압전 산란, 이은화된 불순물 산란, 그리고 합금 산란에 대한 2차원 산란율을 계산하여, 같은 영역에서의 3차원 산란율과 비교하였다. 그 결과 bulk영역에서 가장 우세한 이온화된 불순물 산란이, 2-DEG 시스템에서 크게 감소되었음을 알 수 있었는데, 이는 변조 도핑에 의하여 이온화된 불순물을 2-DEG가 존재하는 채널영역의 불순물 양을 감소시켰기 때문으로 해석된다.

• Electrical & Electronic Materials
• /
• v.9 no.7
• /
• pp.680-689
• /
• 1996

SrCaCuO와 BiPbCuO 화합물로 이루어진 이중층시료가 만들어 졌으며, 소결과정에서 나타나는 확산과 입자간의 상호작용으로 108K의 임계온도를 나타내었다. 이 시료는 820.deg. C에서 0-210 시간동안 소결되었다. 초전도체의 생성, 성장메카니즘과 임계온도의 관계가 연구되었으며, 최적조건은 820.deg. C에서 210시간 소결하고 SrCaCuO와 BiPbCuO의 도포비가 1:0.6인 시편에서 나타났다. 또한 이중층시료에서 가장 좋은 조성비는 S $r_{2}$C $a_{2}$C $u_{2}$ $O_{x}$와 B $i_{1.9}$P $b_{0.5}$C $u_{3}$ $O_{y}$ 이었다.다.

• Progress in Superconductivity and Cryogenics
• /
• v.24 no.2
• /
• pp.23-26
• /
• 2022

A lossless transport of an arbitrary waveform in a frequency range of 10⁶-10⁹ Hz through a conduction channel in a cryogenic temperature is of importance for a high-speed operation of quantum device. However, it is hard to use a commercial oscilloscope to directly detect the waveform travelling in a device located in a cryogenic system. Here, we developed a cryogenic voltage sampling technique by using a Schottky barrier gate prepared on a surface of a GaAs/AlGaAs device, which revealed that an incident rectangle waveform can transport through a 1 mm long two-dimensional conduction channel without waveform deformation up to 20 MHz, while further study is needed to increase the detection frequency.

• Electrical & Electronic Materials
• /
• v.9 no.3
• /
• pp.251-258
• /
• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.11
• /
• pp.862-866
• /
• 2012

Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

• Electrical & Electronic Materials
• /
• v.3 no.1
• /
• pp.36-44
• /
• 1990

본 연구는 34wt%(5Ce-Didymium)-Fe-1wt%B 합금의 분말입도, 성형압력 및 소결온도 에 따른 자기적 성질에 관하여 연구하였다. 그리고 각각의 자기적 성질에 영향을 주는 인자를 알아내기 위하여 밀도측정, 미세조직 및 자구를 관찰하였다. 미세조직은 금속현미경을 이용하여 관찰하였으며 자구는 Bitter법으로 관찰하였다. 결과는 아래와 같다. (1)분말의 입도와 결정립 크기가 작아질수록 경질자기 특성은 증가하였으며 소결온도가 증가할수록 경질자기 특성도 증가하였다. 그러자 압력은 1000kg/$cm^{2}$일때 가장 좋은 경질자기 특성이 얻어졌다. (2)결정립이 클수록 자구의 구조는 복잡했으며 미세한 결정립일수록 큰 결정립에 비해 큰 보자력을 갖는다. 포화된 후에는 거의 모든 결정립이 단자구였으며 열적으로 탈자되었을 경우에는 모두가 multi-domain였다. (3)가장 우수한 경질자기 특성은 3-5.mu.m의 분말을 사용하여 1080.deg.C에서 소결한 후 590.deg.C에서 열처리한 시편에서 얻어졌으며 (BH)$_{max}$는 214.6kJ.m$_{-3}$이다.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.15 no.2
• /
• pp.654-660
• /
• 1991

Natural convection heat transfer in a horizontal annulus from an inner tube with two vertical fins has been studied for the effects of dimensionless fin length and Rayleigh number. The maximum local Nusselt number of inner tube was obtained at .theta. = 145.deg. and that of outer cylinder at .theta. = 0.deg. for the case of $l_{F}$=0.3 Local Nusselt number distributions for the lower fins show higher values than that of the upper fins. The mean Nusselt number of inner tube was increased with the values of dimensionless fin length. The mean Nusselt number can be represented in an exponential function of Grashof number at various fin lengths. As compared with experimental and numerical results, isotherms and local Nusselt number show good agreement.t.

• Electrical & Electronic Materials
• /
• v.8 no.1
• /
• pp.21-26
• /
• 1995

Highly sensitive and mechanically stable gas sensors have been fabricated using the microfabrication and micromaching techniques. The sensing material used to detect the offensive trimethylarnine ((CH$_{3}$)$_{3}$N) gas is 6 wt% $Al_{2}$O$_{3}$-doped, 1000.angs.-thick ZnO deposited by r. f. magnetron sputtering. The optimum operating temperature of the sensor is 350.deg.C and the corresponding heater power is about 85mW. Excellent thermal insulation is achieved by the use of a double-layer structure of 0.2.mu.m -thick silicon nitride and 1.4.mu.m-thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric pressure chemical vapor deposition(APCVD), respectively. The sensors are mechanically stable enough to endure at least 43, 200 heat cycles between room temperature and 350.deg. C.

• Bulletin of the Korean Mathematical Society
• /
• v.29 no.2
• /
• pp.277-283
• /
• 1992

Let GF(q) be a finite field with q elements where q=p$^{n}$ for a prime number p and a positive integer n. Consider an arbitrary function .phi. from GF(q) into GF(q). By using the Largrange's Interpolation formula for the given function .phi., .phi. can be represented by a polynomial which is congruent (mod x$^{q}$ -x) to a unique polynomial over GF(q) with the degree < q. In [3], Wells characterized all polynomial over a finite field which commute with translations. Mullen [2] generalized the characterization to linear polynomials over the finite fields, i.e., he characterized all polynomials f(x) over GF(q) for which deg(f) < q and f(bx+a)=b.f(x) + a for fixed elements a and b of GF(q) with a.neq.0. From those papers, a natural question (though difficult to answer to ask is: what are the explicit form of f(x) with zero terms\ulcorner In this paper we obtain the exact form (together with zero terms) of a polynomial f(x) over GF(q) for which satisfies deg(f) < p$^{2}$ and (1) f(x+a)=f(x)+c for the fixed nonzero elements a and c in GF(q).