• 제목/요약/키워드: 2D BST

검색결과 43건 처리시간 0.035초

RF magnetron reactive sputtering 법으로 제작한 BST 박막의 전기적 및 계면 특성에 관한 연구 (Electrical and interface characteristics of BST thin films grown by RF magnetron reactive sputtering)

  • 강성준;장동훈;유영섭
    • 전자공학회논문지D
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    • 제35D권5호
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    • pp.33-39
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    • 1998
  • The BST (Ba$_{1-x}$ Sr$_{x}$TiO$_{3}$)(50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively The BST thin film anealed at 800.deg. C for 2 min has pure perovskite structure and good surface roughness of 16.1.angs.. We estimate that the thickness and dielectric constant of interface layer between BST film and electrode are 3nm and 18.9, respectively, by measuring the capacitance with various film thickness. As the film thickness increases form 80nm to 240nm, the dielectric constant at 10kHz increases from 199 to 265 and the leakage current density at 200kV/cm decreases from 0.682.mu.A/cm$^{2}$ to 0.181 .mu.A/cm$^{2}$. In the case of 240nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5fC/.mu.m$^{2}$ and 0.182.mu.A/cm$^{2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.or.

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산소 결핍이 고유전 BST 박막에 미치는 영향 (Effects of Oxygen Vacancies on the Electrical Properties of High-Dielectric (Ba,Sr)TiO$_3$Thin Films)

  • 김일중;이희철
    • 전자공학회논문지D
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    • 제36D권4호
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    • pp.63-69
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    • 1999
  • 본 연구에서는 급속 열처리 온도와 분위기를 변화 시키면서 Pt/BST/Pt 커패시터의 전기적 특성 변화를 알아보고, 특성 개선에 대한 체계적인 원인을 분석하였다. 급속 열처리의 온도와 분위기에 따른 Pt/BST/Pt 커패시터의 전기적 특성 변화는 BST 박막 내의 산소 결핍과 관련이 있는 것으로 보인다. 이러한 사실을 확인하기 위하여 450℃, 20mttorr에서 산소와 산소 플라즈마 분위기에서 각각 열처리를 수행한 후 전기적 특성을 비교하였다. 산소 플라즈마에서 열처리를 수행한 BST 커패시터의 누설전류 전류밀도가 단순히 산소 분위기에서 열처리 한 시편과 비교하여 훨씬 낮았다. 또한, 산소 분위기에서 열처리를 수행한 BST 커패시터의 유전율이 약14%정도 감소한 반면, 산소 플라즈마에서 열처리를 수행한 유전율은 거의 감소가 없었다. 위의 결과는 반응성이 강한 산소 원자를 많이 포함하고 있는 산소 플라즈마가 산소 결핍을 보상하는데 있어서 매우 효과적임을 시사하고 있다. 결과적으로, BST박막 내의 산소 결핍이 BST커패시터의 누설전류 밀도와 유전율에 큰 영향을 미치고 있음을 추정할 수 있다. 그리고, 산소 플라즈마에서 열처리를 수행함으로써 유전율의 감소 없이 누설전류 밀도가 크게 개선된 BST커패시터를 얻을 수 있었다.

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조성변화에 따른 BST 박막의 특성에 관한연구 (A study on the characteristics of BST thin films with various Ba/Sr Ratio)

  • 류정선;강성준;윤영섭
    • 전자공학회논문지A
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    • 제33A권6호
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    • pp.120-126
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    • 1996
  • In the present study, we have studied on the characteristics of BST thin films with various Ba/Sr ratios by using sol-gel method. Barium-acetate, strontium-acetate and titanium isopropoxide are used as starting materials to fabricate BST thin films by sol-gel method. The fabrication conditions are estabilished through the TG-dT analyses and XRD measurements. BST thin films with the Ba/Sr ratios of 90/10, 70/30, 50/50 and 30/70 were deposited on the Pt/Ta/SiO$_{2}$Si substrate with the estabilished sol-gel process, and their characteristics were examined. The relative permittivity and the leakage current density at 5V vary from 287 to 395 and from 2.3 to 220${\mu}$A/cm$^{2}$, respectively, with various Ba/Sr ratio. Among the films investigatd in this research, BST (70/30) thin film shows the best relative permittivity and dielectric loss of BST (70/30) thin film are 395 and 0.045, respectively and the leakage current density at 5V is 2.3${\mu}$A/cm$^{2}$.

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단기 발암성 검색법을 이용한 축산식품에 잔류할 수 있는 합성홀몬의 발암촉진효과에 대한 연구 (Promotive Effects of Several Synthetic Hormones Using Short-Term Carcinogen Screening Method)

  • 임윤규;강경선;이영순
    • 한국식품위생안전성학회지
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    • 제5권4호
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    • pp.179-186
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    • 1990
  • 이 연구는 수입 축산식품중에 잔류해서 사람에게 해를 줄 수 있는 여러 합성 홀몬의 발암성을 알아보기 위하여 수행한 연구이다. 6주령의 F344 랫드를 5군으로 나누어 발암유발물질인 diethylstilbesterol(DENA)를 체중 kg당 200 mg을 복강 내 투여하고, 시험게시 제2주에서 시험종료시까지 제 1, 2, 3,군에 각각 diethylstilbesterol(DES), ethynylestradio($EE_2$), bovine somatotrophin(BST)을 투여하고, 제 4군에는 발암촉진이 잘 알려진 phenobabital을 투여하였으며, 제 5군은 대조군으로 기초사료만을 급여하였다. 동시에 모든군의 랫드는 D-galactosamine을 체중 kg 당 300 mg을 복강내로 1회 투여하였으며, 간변화의 증폭을 위하여 2/3 간부분 절제를 시험개시 제 5주에 실시하였다. 시험종료시 부검후 랫드의 간장은 GST-P에 대한 면역조직화학적 염색을 실시하여 발암성을 검색하였다. 두개의 합성 에스트로젠 홀몬($EE_2$, DES)은 대조군과 비교하였을 때 발암성이 있는 것으로 생각되어지고, BST는 발암성이 없는 것으로 생각된다.

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BST 박막 표면의 프랙탈 분석 및 3D 이미지 특성 (A Study on Fractal Analysis and 3D Images of Surface on BST Thin Films.)

  • 홍경진;민용기;조재철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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    • pp.103-106
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    • 2002
  • The applicability of models based on fractal morphology to characterize $(Ba\;Sr)TiO_{3}$ thin film surfaces was investigated. The fractal morphology of coated barium strontium titan oxide thin film surfaces was described using fractal dimension from scanning electro microscopy image. The $(Ba\;Sr)TiO_{3}$ coating were deposited on silicon wafers using $(Ba\;Sr)TiO_{3}$ solution and spin coater. BST solution was composited by mol ratio, and then spin-coated from 3 times to 5 times coating on $Pt/SiO_{2}/Si$ substrate. Qualitative thin film analysis was performed with scanning electro microscopy (SEM), and surfaces parameters such as average grain diameter, roughness exponent and fractal dimension were determined.

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BST 박막의 비대칭전극재료에 따른 누설전류특성 (The Leakage Current Properties of BST thin films with Unsymmetrical Electrode Materials)

  • 전장배;김덕규;박영순;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.329-332
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    • 1999
  • In this paper, BST((Bao.&o,dTi0:3) thin films were deposited by the rf magnetron sputtering method on Pt/$SiO_2$/Si substrate. Pt, $RuO_2$, Ag, Cu films for the formation of top electrode were deposited on BST thm films. And then Top Electrodes/BST/Pt capacitors were annealed with rapid thermal annealing(RTA) at various temperature. We have investigated effect of post-annealing on the electrical properties such as dielectric constant and leakage current of the capacitors. It was found that electrical properties of the capacitors were greatly depended on the annealing temperatures as well as the materials of top electrodes. In BST thin films with Pt top electrode was annealed at $700^{\circ}C$. the dielectric constant was measured to the value of 346 at l[kHzl and the leakage current was obtained to the value of $8.76\times10^8$[A/$\textrm{cm}^2$] at the forward bias of 2[V].

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고유전 (Ba, Sr) $TiO_3$ 박막 커패시터의 저전계 영역에서의 전기전도기구 (Electrical Conduction Mechanism of (Ba, Sr) $TiO_3$ Thin Film Capacitor in Low Electric Field Region)

  • 장훈;장병탁;차선용;이희철
    • 전자공학회논문지D
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    • 제36D권6호
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    • pp.44-51
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    • 1999
  • High density DRAM의 cell capacitor로 촉망 받고 있는 고유전체 BST박막 커패시터의 저 전계(<0.2MV/cm) 영역에서의 전기전도 현상을 분석하였다. 저 전계 영역에서 Pt/BST/Pt구조의 MIM 커패시터에 일정 전계를 인가한 후 전류를 측정하는 I(t)방법을 이용하여 유전완화전류와 누설전류를 분리해내어 박막의 측정온도 변화, 전계의 크기, 인가방향 변화, 후속 열처리에 따른 BST 박막의 전기전도 기구를 분석하였다. 그 결과, 유전완화전류는 Hoppiong process에 의한 BST박막내부의 trap된 전자들의 이동에 의한 전하재배치로 설명되어지며, 누설전류도 박막내의 trap에 의한 poole-Frenkel process에 의한 것임을 알 수 있었다. 그리고 각 전류성분에 기억하고 있는 trap이 BST박막내의 산호 결핍임을 추정하였다.

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Enhancing Electrical Properties of N-type Bismuth Telluride Alloys through Graphene Oxide Incorporation in Extrusion 3D Printing

  • Jinhee Bae;Seungki Jo ;Kyung Tae Kim
    • 한국분말재료학회지
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    • 제30권4호
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    • pp.318-323
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    • 2023
  • The thermoelectric effect, which converts waste heat into electricity, holds promise as a renewable energy technology. Recently, bismuth telluride (Bi2Te3)-based alloys are being recognized as important materials for practical applications in the temperature range from room temperature to 500 K. However, conventional sintering processes impose limitations on shape-changeable and tailorable Bi2Te3 materials. To overcome these issues, three-dimensional (3D) printing (additive manufacturing) is being adopted. Although some research results have been reported, relatively few studies on 3D printed thermoelectric materials are being carried out. In this study, we utilize extrusion 3D printing to manufacture n-type Bi1.7Sb0.3Te3 (N-BST). The ink is produced without using organic binders, which could negatively influence its thermoelectric properties. Furthermore, we introduce graphene oxide (GO) at the crystal interface to enhance the electrical properties. The formed N-BST composites exhibit significantly improved electrical conductivity and a higher Seebeck coefficient as the GO content increases. Therefore, we propose that the combination of the extrusion 3D printing process (Direct Ink Writing, DIW) and the incorporation of GO into N-BST offers a convenient and effective approach for achieving higher thermoelectric efficiency.

A Fermented Ginseng Extract, BST204, Inhibits Proliferation and Motility of Human Colon Cancer Cells

  • Park, Jong-Woo;Lee, Jae-Cheol;Ann, So-Ra;Seo, Dong-Wan;Choi, Wahn-Soo;Yoo, Young-Hyo;Park, Sun-Kyu;Choi, Jung-Young;Um, Sung-Hee;Ahn, Seong-Hoon;Han, Jeung-Whan
    • Biomolecules & Therapeutics
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    • 제19권2호
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    • pp.211-217
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    • 2011
  • Panax ginseng CA Meyer, a herb from the Araliaceae, has traditionally been used as a medicinal plant in Asian countries. Ginseng extract fermented by ginsenoside-${\beta}$-glucosidase treatment is enriched in ginsenosides such as Rh2 and Rg3. Here we show that a fermented ginseng extract, BST204, has anti-proliferative and anti-invasive effects on HT-29 human colon cancer cells. Treatment of HT-29 cells with BST204 induced cell cycle arrest at $G_1$ phase without progression to apoptosis. This cell cycle arrest was accompanied by up-regulation of tumor suppressor proteins, p53 and p21$^{WAF1/Cip1}$, down-regulation of the cyclin-dependent kinase/cyclins, Cdk2, cyclin E, and cyclin D1 involved in $G_1$ or $G_1/S$ transition, and decrease in the phosphorylated form of retinoblastoma protein. In addition, BST204 suppressed the migration of HT-29 cells induced by 12-O-tetradecanoylphorbol-13-acetate, which correlated with the inhibition of metalloproteinase-9 activity and extracellular signal-regulated kinase activity. The effects of BST204 on the proliferation and the invasiveness of HT-29 cells were similar to those of Rh2. Taken together, the results suggest that fermentation of ginseng extract with ginsenoside-${\beta}$-glucosidase enhanced the anti-proliferative and the anti-invasive activity against human colon cancer cells and these anti-tumor effects of BST204 might be mediated in part by enriched Rh2.

고주파 수동소자 유전체용 $Ba_{0.5}Sr_{0.5}TiO_{3}$ 박막의 유전특성에 관한 연구 (Study on dielectric properties of $Ba_{0.5}Sr_{0.5}TiO_{3}$thin films for high-frequency passive device)

  • 이태일;최명률;박인철;김홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.263-266
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    • 2001
  • In this paper, we investigated dielectric properies for BST thin films that was deposited on MgO/Si substrates using RF magnetron sputtering. In here, MgO film was used to perform that a diffusion b arrier between the BST film and Si substrate and a buffer layer to assist the BST film growth. A d eposition condition for MgO films was RF Power of 50W, substrate temperature of room temperature and the working gas ratio of Ar:O$_2$ were varied from 90:10 to 60:47. Finally we manufactured the cap acitor of Al/BST/MgO/Si/Al structure to know electrical properties of this capacitor through I-V, C-V measurement. In the results, C-V aha racteristic curves was shown a ferroelectric property so we measured P-E. A remanent poliazation and coerceive electric field was present 2$\mu$C/cm$^2$ and -27kV/cm respectively at Ar:O$_2$=90:10. And a va clue of dielectric constant was 86 at Ar:02=90:10.

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