• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.3
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• pp.312-320
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• 2020

3D scanning began in the field of manufacturing. In the construction field, a BIM (Building Information Modeling)-based 3D modeling environment was developed and used for the overall construction, such as factory prefabrication, structure construction inspection, plant facility, bridge, tunnel structure inspection using 3D scanning technology. LiDARs have higher accuracy and density than mobile scanners but require longer registration times and data processing. On the other hand, in interior building space management, relatively high accuracy is not needed, and the user can conveniently move with a mobile scan system. This study derives considerations for the development of Simultaneous Localization and Mapping (SLAM)-based Scan Backpack systems that move freely and support real-time point cloud registration. This paper proposes the mobile scan system, framework, and component structure to derive the considerations and improve scan productivity. Prototype development was carried out in two stages, SLAM and ScanBackpack, to derive the considerations and analyze the results.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.62-68
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• 2010

This work proposes a 10b 100MS/s DAC based on a segmented local matching technique primarily for small chip area. The proposed DAC employing a segmented current-steering structure shows the required high linearity even with the small number of devices and demonstrates a fast settling behavior at resistive loads. The proposed segmented local matching technique reduces the number of current cells to be matched and the size of MOS transistors while a double-cascode topology of current cells achieves a high output impedance even with minimum sized devices. The prototype DAC implemented in a 0.13um CMOS technology occupies a die area of $0.13mm^2$ and drives a $50{\Omega}$ load resistor with a full-scale single output voltage of $1.0V_{p-p}$ at a 3.3V power supply. The measured DNL and INL are within 0.73LSB and 0.76LSB, respectively. The maximum measured SFDR is 58.6dB at a 100MS/s conversion rate.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.70-73
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• 2012

In this paper, we introduce a design method for a quasi-Yagi antenna (QYA) with broadband characteristics of an impedance bandwidth ratio of > 2 : 1 and a gain of > 4 dBi. The QYA is fed by a microstrip line fabricated on a coplanar strip line and it consists of 3 elements; a planar dipole, a nearby director close to the dipole, and a ground plane reflector. By placing a rectangular patch-type director with large width near to the dipole driver, broadband characteristics are achieved. An optimized 3-element QYA for operation over 1.6-3.5 GHz (bandwidth ratio 2.2 : 1) is fabricated on an FR4 substrate with a size of $90mm{\times}90mm$ and tested experimentally. The results show an impedance bandwidth of 1.56-3.74 GHz (bandwidth ratio 2.4 : 1) for VSWR < 2, a peak gain of 4.41-6.53 dBi, and a front-to-back ratio (FBR) > 13.6 dB within the bandwidth.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.5 s.347
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• pp.17-24
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• 2006

The optical feedforward is known as a complicated technique in spite of its superior linearization. Here we optimized the feedforward circuit parameters using a systematic approach for optimum efficiency. A systematic approach was verified by transmission experiments of 2.14 GHz two tones. The compared third order IMD was enhanced by 38 dB for two-tone case. The experimental results for transmission of W-CDMA signals were described. The ACPR was enhanced by 20 dB for 1 W-CDMA carrier and by 16 dB for 3 W-CDMA carriers. Also, noise level was reduced by 7 dB.

• Journal of Korea Foundry Society
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• v.27 no.6
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• pp.250-254
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• 2007

3원계 Al-Nb-Zr의 용응 합금을 스프렛 ?봬?(splat-quenching) 방법을 이용하여 급속냉각응고 한 후, 응고된 시편을 698K에서 200시간까지 열처리하여 상전이를 연구하였다. 급속응고 및 열처리된 시편의 미세구조는 X-선 회절 및 투과전자 현미경으로 분석하였다. Al-1.95Nb-0.65Zr, Al-1.3Nb-1.3Zr, 및 Al-0.65Nb-1.95Zr (at%) 3원 합금계를 연구하였다. 각 합금의 조성은 Vegard's 법칙을 적용하여 Al(${\alpha}$)의 기지조직과 $L1_2-Al_3(Nb,Zr)$의 석출상들이 정합을 이루도록 선택되었다. 급속응고된 후 각 합금은 과고용된 Al(${\alpha}$)의 고용상을 형성하였다. Al-1.3Nb-1.3Zr, 및 Al-0.65Nb-1.95Zr의 급속응고된 상태의 시편을 698K에서 열처리하여 알루미늄 기지와 정합의 계면을 갖는 $L1_2-Al_3(Nb_{0.5}Zr_{0.5})$와 $L1_2-Al_3(Nb_{0.25}Zr_{0.75})$의 상을 각각 석출하였다. 반면 Al-1.95Nb-0.65Zr 합금은 평형상인 $D0_{22}-Al_3(Nb_{0.75}Zr_{0.25})$ 상을 석출하였다. 준안정상의 정합 $Al_3(Nb,Zr)$ 미세 분산상 석출은 입자의 조대화를 억제하고 재료의 고온 강도를 증가될 것으로 사료된다.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.339-342
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• 2004

본 논문은 밀리미터파 대역 무선통신 시스템 송신부의 응용을 위해 CPW 구조를 이용하여 V-band용 상향 주파수 혼합기와 2단 구동증폭기를 설계$\cdot$제작하였다. 능동소자는 본 연구실에서 제작한 $0.1{\mu}m$ 게이트 GaAs Pseudomorphic HEMTs(PHEMTs)를 사용하였으며 입$\cdot$출력단은 CPW를 사용해 정합 회로를 설계하였다. 제작된 상향 주파수 혼합기는 LO power 5.4 dBm, 2.4 GHz IF 신호를 -10.25 dBm으로 입력하였을 때 Conversion Loss 1.25 dB, LO-to-RF Isolation은 58 GHz에서 13.2 dB의 특성을 나타내었다 2단 구동 증폭기는 측정결과 60 GHz에서 S21 이득 13 dB, $58\;GHz\;\~\;64\;GHz$ 대역에서 S21 이득 12 dB 이상을 유지하는 광대역 특성을 얻었고 증폭기의 Pl dB는 3.8 dBm, 최대 출력전력은 6.5 dBm의 특성을 얻었다.

• Korean Journal of Optics and Photonics
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• v.27 no.5
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• pp.165-173
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• 2016

In this paper, we propose a three-dimensional (3D) scanning system based on two line lasers. This system uses two line lasers with different wavelengths as light sources. 532-nm and 630-nm line lasers can compensate for missing scan data generated by geometrical occlusion. It also can classify two laser planes by using the red and green channels. For automatic registration of scanning data, we control a stepping motor and divide the motor's rotational degree of freedom into micro-steps. To this end, we design a control printed circuit board for the laser and stepping motor, and use an image processing board. To compute a 3D point cloud, we obtain 200 and 400 images with laser lines and segment lines on the images at different degrees of rotation. The segmented lines are thinned for one-to-one matching of an image pixel with a 3D point.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.3
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• pp.1-9
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• 2003

In this paper, we designed a highly suppressed sidelobe ladder type RF SAW bandpass filter based on 1-port resonator, for 800 MHz mobile communication system. In order to get the highest device characteristics, we optimized some important parameters such as the electrode thickness, electrode lambda weghting of the reflectors, and static capacitance ratio. Furthermore, we fabricated the Tx and Rx. filter using optimized parameters. Implemented filters can be used in 800 MHz mobile communication system and external impedance matching circuits are not needed. RF filter was fabricated on 36$^{\circ}$LiTaO$_3$ substrates with Al-Cu (W 3 %)and mounted 3.8mm$\times$3.8mm$\times$1.5mm SMD package. Developed filters has 2.3 dB insertion loss in the 25 MHz pass-band, 33MHz with 3-dB insertion loss, stop-band rejection of 30 dB, passband ripple is less than 0.5 The power durability of the filters measured about 3.5W and the maximum temperature variation within -2$0^{\circ}C$~8$0^{\circ}C$ was 0.09 dB/$^{\circ}C$ of 3-dB insertion loss.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.415-416
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• 2006

In this paper, we proposed a new coding technique of digital hologram video using 3D scanning method and video compression technique. The proposed coding consists of capturing a digital hologram to separate into RGB color space components, localization by segmenting the fringe pattern, frequency transform using $M{\tiems}N$ (segment size) 2D DCT (2 Dimensional Discrete Cosine Transform) for extracting redundancy, 3D scan of segment to form a video sequence, motion compensated temporal filtering (MCTF) and modified video coding which uses H.264/AVC.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.5
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• pp.393-396
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• 2018

Herein, a 94-GHz low-noise amplifier (LNA) using the 65-nm CMOS process is presented. The LNA is composed of a four-stage differential common-source amplifier and impedance matching is accomplished with transformers. The fabricated LNA chip shows a peak gain of 25 dB at 94 GHz and has a 3-dB bandwidth at 5.5 GHz. The chip consumes 46 mW of DC power from a 1.2-V supply, and the total chip area, including the pads, is $0.3mm^2$.