• Journal of Astronomy and Space Sciences
• /
• v.25 no.2
• /
• pp.139-148
• /
• 2008

It has been known that high-speed solar wind streams associated with coronal holes lead to quasi-periodic substorms that occur approximately every $2{\sim}4$ hours. In this paper we examined 222 repetitive substorms that occurred during high-speed stream periods in July through December in 2003 to quantitatively determine a range of energy input from the solar wind into the magnetosphere between two consecutive substorms. For this study, we have used the Akasofu ${\varepsilon}$-parameter to time-integrate it for the interval between two consecutive substorms, and have applied this method to the 222 substorms. We find that the average amount of solar wind input energy between two adjacent substorms is $1.28{\times}10^{14}J$ and about 85% out of the 222 substorms occur after an energy input of $2{\times}10^{13}{\sim}2.3{\times}10^{14}J$. Based on these results, we suggest that it is not practical to predict when a sub storm will occur after a previous one occurs purely based on the solar wind-magnetosphere energy coupling. We provide discussion on several possible factors that may affect determining substorm onset times during high-speed streams.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.2 no.2
• /
• pp.71-76
• /
• 1992

Piezoceramic filters were fabricated by adding $MnO_2 and FeZ0_3$ to the $0.05Pb(Al_{2/3}W_{1/3})O_3-0.95Pb(Zr_{0.52}Ti0.48)O_3$ system using photolithography method. As the amounts of $MnO_2$ increased, the electro-mechanical coupling factor(Kp) decresed. On the other hand, for $Fe_2O_3$ added samples, Kp was 57%, but mechanical quality factor(Qm) showed relatively low value. The passband widths were 155kHz for 0.3wt % $MnO_2$ addition and 260kHz for 0.1 wt % $Fe_2O_3$ addition, and were inversely propotional to Qm values. Group delay time characteristics showed Gausian for $MnO_2$ additions and Butterworth for$Fe_2O_3$ additions.

• Tunnel and Underground Space
• /
• v.28 no.5
• /
• pp.400-425
• /
• 2018

This study presents the research results and current status of the DECOVALEX-2019 project Task B. Task B named 'Fault slip modelling' is aiming at developing a numerical method to simulate the coupled hydro-mechanical behavior of fault, including slip or reactivation, induced by water injection. The first research step of Task B is a benchmark simulation which is designed for the modelling teams to familiarize themselves with the problem and to set up their own codes to reproduce the hydro-mechanical coupling between the fault hydraulic transmissivity and the mechanically-induced displacement. We reproduced the coupled hydro-mechanical process of fault slip using TOUGH-FLAC simulator. The fluid flow along a fault was modelled with solid elements and governed by Darcy's law with the cubic law in TOUGH2, whereas the mechanical behavior of a single fault was represented by creating interface elements between two separating rock blocks in FLAC3D. A methodology to formulate the hydro-mechanical coupling relations of two different hydraulic aperture models and link the solid element of TOUGH2 and the interface element of FLAC3D was suggested. In addition, we developed a coupling module to update the changes in geometric features (mesh) and hydrological properties of fault caused by water injection at every calculation step for TOUGH-FLAC simulator. Then, the transient responses of the fault, including elastic deformation, reactivation, progressive evolutions of pathway, pressure distribution and water injection rate, to stepwise pressurization were examined during the simulations. The results of the simulations suggest that the developed model can provide a reasonable prediction of the hydro-mechanical behavior related to fault reactivation. The numerical model will be enhanced by continuing collaboration and interaction with other research teams of DECOLVAEX-2019 Task B and validated using the field data from fault activation experiments in a further study.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.196-196
• /
• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, has grabbled appreciable attention due to its extraordinary mechanical, thermal, electrical, and optical properties. Based on the graphene's high carrier mobility, high frequency graphene field effect transistors have been developed. Graphene is useful for photonic components as well as for the applications in electronic devices. Graphene's unique optical properties allowed us to develop ultra wide-bandwidth optical modulator, photo-detector, and broadband polarizer. Graphene can support SPP-like surface wave because it is considered as a two-dimensional metal-like systems. The SPPs are associated with the coupling between collective oscillation of free electrons in the metal and electromagnetic waves. The charged free carriers in the graphene contribute to support the surface waves at the graphene-dielectric interface by coupling to the electromagnetic wave. In addition, graphene can control the surface waves because its charge carrier density is tunable by means of a chemical doping method, varying the Fermi level by applying gate bias voltage, and/or applying magnetic field. As an extended application of graphene in photonics, we investigated the characteristics of the graphene-based plasmonic waveguide for optical signal transmission. The graphene strips embedded in a dielectric are served as a high-frequency optical signal guiding medium. The TM polarization wave is transmitted 6 mm-long graphene waveguide with the averaged extinction ratio of 19 dB at the telecom wavelength of $1.31{\mu}m$. 2.5 Gbps data transmission was successfully accomplished with the graphene waveguide. Based on these experimental results, we concluded that the graphene-based plasmonic waveguide can be exploited further for development of next-generation integrated photonic circuits on a chip.

• Korean Journal of Crystallography
• /
• v.11 no.4
• /
• pp.212-223
• /
• 2000

A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.6
• /
• pp.425-433
• /
• 2000

The stochiometric mix of evaporating materials for the $CuGaTe_2$single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuGaTe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0 and c_0$ were 6.025 $\AA$ and 11.931 $\AA$, respectively. To obtain the single crystal thin films, $CuGaTe_2$mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $670^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is 2.1$\mu\textrm{m}$. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of $CuGaTe_2$single crystal thin films deduced from Hall data are $8.72{\times}10{23}$개 $\textrm m^3$, $3.42{\times}10^{-2}$ $\textrm m^2$/V.s at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuGaTe_2$single crystal thin film, we have found that the values of spin orbit coupling $\Delta$s.o and the crystal field splitting $\Delta$cr were 0.0791 eV and 0.2463 eV at 10 K, respectively. From the PL spectra at 10 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0470 eV and the dissipation energy of the donor-bound exciton and acceptor-bound exciton to be 0.0490 eV, 0.0558 eV, respectively.

• Biomedical Science Letters
• /
• v.6 no.4
• /
• pp.229-235
• /
• 2000

In situ brain-pancreas perfusion was performed on male adult Sprague-Dawley rats, of which the central nervous systems (CNS) were intact during the perfusion procedure. The modified Krebs-Ringer buffer with 100 mg/dL of glucose and 20 mM of arginine was perfused for 30 min. In the experimental groups, a cephalic glucopenia was induced at 0 min (GLP1 group) or at 16 min (GLP2 group). The glucopenia was not induced in the control (CONT group). Insulin and glucagon concentrations in the effluent samples from the pancreas were measured using a RIA method. In all three groups, the first and second phases in the dynamics of the insulin and glucagon secretion were observed, which was a typical biphasic secretory pattern. The amount of insulin secretion tended to decrease in the GLP1 and GLP2 groups, but there was no statistically significant difference among the groups. However, the amount of glucagon secretion during 0~15 min of the perfusion period in the GLP1 group was greater as compared to the CONT group (p<0.05). The amount of glucagon secretion during 16~30 min of the perfusion period in the GLP2 group tended to be greater as compared to the CONT group, however there was no statistical significance. These data indicate that the cephalic glucopenia stimulates the direct secretion of glucagon from the pancreas during the early period of perfusion in the CNS-intact pancreatic perfused rats.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.2
• /
• pp.116-120
• /
• 2011

The 0.98 ($Na_{0.44}K_{0.52})Nb_{0.84}O_3-0.02Li_{0.04}$ ($Sb_{0.06}Ta_{0.1})O_3-0.5$ mol%CuO ceramics have been fabircated by ordinary sintering technique and the effect of various calcination method on the electrical propertis and microstructure have been studied. It was observed that the various calcination method influenced the elelctrical properties and structural properties of the 0.98NKN-0.02LST-0.5 mol%CuO ceramics with the optimum piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) at room temperature of about $155{\rho}C/N$ and 0.349, respectively, from 0.98NKN-0.02LST-0.5 mol%CuO ceramics sample. The curie temperature ($T_c$) of this ceramic was found at $440^{\circ}C$. The 0.98NKN-0.02LST-0.5 mol%CuO ceramics are a promising lead-free piezoelectric ceramics.

• Journal of the Korean Magnetics Society
• /
• v.5 no.5
• /
• pp.366-371
• /
• 1995

High performance magnetic materials are characterized by the combination of outstanding magnetic properties and optimized microstructures, e.g., nanocrystalline composites of multilayers and small particle systems. The characteristic parameters of the hysteresis loops of these materials vary over more than a factor of $10^{6}$ with optimum values for the coercive field of several Tesla and permeabilities of $10^{6}$. Within the framework of the computational micromagnetism (nanomagnetism) using the finite element method the upper and lower bounds of the coercive field of different types of grain ensembles and multilayers have been determined. For the case of nanocrystalline composites the role of grain size, exchange and dipolar coupling between grains and the degree of grain alignment will be discusses in detail. It is shown that the largest coercivities are obtained for exchange decoupled grains, whereas remanence enhancing requires exchange coupled grains below 20 nm. For composite permanent magnets based on $Nd_{2}Fe_{14}B$ with an amount of ~ 50% soft $\alpha$-Fe-phase coercivities of ${\mu}_{0}H_{c}=0.75\;T$, a remanence of 1.5 T and an energy product of $400\;kJ/m^{3}$ is expected. In nanocrystalline systems the temperature dependence of the coercivity is well described by the relation ${\mu}_{0}H_{c}=(2\;K_{1}/M_{s}){\alpha}-N_{eff}{\mu}_{0}M_{s}$, where the microstructural parameters $\alpha$ and $N_{eff}$ take care of the short-range perturbations of the anisotropy and $N_{eff}$ is related to the long-range dipolar interactions. $N_{eff}$ is found to follow a logarithmic grain size size dependence ${\mu}_{0}H_{c}=(2\;K_{1}/M_{s}){\alpha}-N_{eff}(\beta1nD){\mu}_{0}M_{s}$. Several trends how to achieve the ideal situation $\alpha$->1 and $N_{eff}$->1->0 will be discussed.

• Journal of Sensor Science and Technology
• /
• v.10 no.1
• /
• pp.62-70
• /
• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at $45^{\circ}C$. Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter $a_o$ was $5.6687\;{\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 293 K. The band gap given by the transmission edge changed from $2.700{\underline{5}}\;eV$ at 293 K to $2.873{\underline{9}}\;eV$ at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, ${\Gamma}_8$ and ${\Gamma}_7$ and to conduction band ${\Gamma}_6$ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting ${\Delta}so$ is $0.098{\underline{1}}\;eV$. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.061{\underline{2}}\;eV$ and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be $0.017{\underline{2}}\;eV$, $0.031{\underline{0}}\;eV$, respectively.