• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.8
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• pp.745-753
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• 2011

In this paper, the planar monopole antenna for multi-band service is proposed. The proposed antenna, which is a rectangular patch antenna with a U-shaped slit based on a monopole antenna for wide bandwidth characteristic, is designed and analyzed. The antenna size has been miniaturized by using the U-shaped slit. The frequency characteristics are modified and optimized by varying specific parameters. To obtain desired frequency bands, the U-shaped slit and patch lines have been applied. Whole antenna dimensions including the ground plane are $35{\times}50{\times}1\;mm^3$, and the antenna part size is $35{\times}27\;mm^2$. It is fabricated on the FR-4 substrate(${\epsilon}_r=4.4$) using a microstrip line of $50{\Omega}$ for impedance matching. For the measured results, the impedance bandwidth below a VSWR of 2 is 790~916 MHz, 1.74~2.14 GHz, and 2.36~3.13 GHz. The fabricated antenna is satisfied with the aimed impedance bandwidth in GSM/DCS/US-PCS/UMTS/Bluetooth/S-DMB applications.

• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.6
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• pp.760-767
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• 2009

This thesis focuses on the study of high-power, coupled-cavity traveling-wave tube(CCTWT) for radar applications. The CCTWT employed a reentrant double-slot staggered RF cavity structure. Computational analysis of the X-band, double-slot staggered structures is carried out through the use of HFSS code, which solves Maxwell's equations fully in three-dimensions. The non-linear, large-signal performance of CCTWTs are predicted from numerical simulations using a three-dimensional particle-in-cell code, MAGIC3D. With beam voltage set to 12.7~13kV and beam current at 300mA, the CCTWT produces a saturated radiation power of 350~430W, corresponding to an electronic efficiency of 8.9~11.2% and a gain of 23.7~24.2dB within a frequency range of 7.9~8.4GHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.49-50
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• 2014

In this paper, a wideband loop antenna for UWB applications is studied. The proposed wideband loop antenna consists of a circular loop and circular sectors. Circular sectors with a ultra-wideband characteristic are used to connect the circular loop and the center feed points. Optimal design parameters are obtained by analyzing the effects of the gap between the circular sectors and the radius of the circular loop on the input reflection coefficient and gain characteristics. The optimized wideband loop antenna is fabricated on an FR4 substrate with a dimension of $41mm{\times}41mm$. Experimental results show that the antenna has a desired UWB characteristic with a frequency band of 3.1-11.0 GHz for a VSWR < 2.25.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1673-1675
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• 2004

The design, modeling and measurement of RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a LTCC multi-layer switching circuit and integrated low pass filter. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ mm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.7
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• pp.1243-1248
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• 2016

This paper investigated the channel link budget for Wireless Avionics Intra-Communication (WAIC) in 4.4GHz. The band 4.2~4.2GHz was allocated for the communication service among aeronautical applications in world radiocommunication conference (WRC). Wireless channels in aircraft was modelled by the combination of path loss, shadowing effect caused by obstacles, and fading caused by multipath signals. In addition, wireless channels in aircraft are categorized into 6 groups according to various locations of transmitter and receiver. We analyzed the channel link budget for the 6 channel groups in terms of maximum transmission distance and outage probability. Our analysis and intensive computer simulation results show that the propagation characteristics of group A, B, and F is superior to group C, D, E, and the propagation of group E is the most vulnerable. Also, these results can be utilized as basic reference for the channel analysis of intra-aircraft or similar environment.

• ETRI Journal
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• v.27 no.6
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• pp.685-690
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• 2005

DC and RF characteristics of $0.15{\mu}m$ GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The $0.15{\mu}m{\times}100{\mu}m$ MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of -0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4-inch wafer were 8.3% and 5.1%, respectively. The obtained cut-off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The $8{\times}50{\mu}m$ MHEMT device shows 33.2% power-added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.1
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• pp.76-79
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• 2016

This paper describes the successful development and the performance of X-band 50 W pulsed power amplifier using a 50 W GaN-on-SiC high electron mobility transistor. The GaN HEMT with a gate length of $0.25{\mu}m$ and a total gate width of 12 mm were fabricated. The X-band pulsed power amplifier exhibited an output power of 50 W with a power gain of 6 dB in a frequency range of 9.2~9.5 GHz. It also shows a maximum output power density of 4.16 W/mm. This 50 W GaN HEMT and X-band 50 W pulsed power amplifier are suitable for the radar systems and related applications in X-band.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.239-244
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• 2004

In this paper, we have developed a frequency mixer which can be used as a microwave phase conjugator in the LS band retrodirective antenna system. The mixer as a phase conjugator must have an If signal of which frequency is nearly as high as that of an RF signal, so this fact brings difficulty in the combination of input signals and the design of impedance matching circuit. The circuit configuration is chosen to be of the gate mixer using a pseudomorphic HEMT device. The operating frequencies are 4.00 ㎓, 2.01 ㎓, and 1.99 ㎓ for LO, RF, and IF, respectively. Conversion gain is measured to be 12.5 ㏈ and 1 ㏈ compression point -34 ㏈m at the LO power of -7 ㏈m. The mixer fabricated in this research is the single-ended type, where RF leakage signal appears inevitably at the If port because RF and If frequencies are almost the same. The circuit topology suggested here can be applied directly to the design of balanced-type mixers and phase conjugators.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.3
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• pp.1445-1450
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• 2013

In this paper, a broadband series-fed bow-tie dipole pair (SBDP) antenna operating in the band of 1.7-2.7 GHz for mobile communication base station applications is proposed. The proposed antenna uses bow-tie-shaped dipole elements instead of straight strip dipole ones used in a conventional series-fed dipole pair (SDP) antenna. The simulation results show that the lowest operating frequency is shifted toward lower frequency as the flare angle increases, and so the lengths of the bow-tie dipole elements can be reduced in proportion to the frequency shift toward lower frequency. An SBDP antenna with a flare angle of 10 degrees is fabricated on an FR4 substrate (dielectric constant = 4.4 and thickness = 1.6 mm) and total width of the fabricated antenna is reduced by 10% compared to that of the conventional SDP antenna. The measured impedance bandwidth for voltage standing wave ratio (VSWR) < 2 is 48.8% (1.69-2.78 GHz), gain is 5.8-6.3 dBi, and the front-to-back ratio (FBR) is 14-17 dB.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.261-269
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• 2016

A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm² that is the lowest-ever reported chip area for this frequency band was achieved.