• Title/Summary/Keyword: 2-step Annealing

Search Result 183, Processing Time 0.03 seconds

Development of a Design System for Multi-Stage Gear Drives (2nd Report: Development of a Generalized New Design Algorithm) (다단 치차장치 설계 시스템 개발에 관한 연구(제 2보: 일반화된 신설계 알고리즘의 개발))

  • Chong, Tae-Hyong;Bae, In-Ho;Park, Gyung-Jin
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.17 no.10
    • /
    • pp.192-199
    • /
    • 2000
  • The design of multi-stage gear drives is a time-consuming process because it includes more complicated problems, which are not considered in the design of single-stage gear drives. The designer has no determine the number of reduction stages and the gear ratios of each reduction stage. In addition, the design problems include not only dimensional design but also configuration design of gear drive elements. There is no definite rule or principle for these types of design problems. Thus the design practices largely depend on the sense and the experiences of the designer, and consequently result in undesirable design solution. A new and generalized design algorithm has been proposed to support the designer at the preliminary phase of the design of multi-stage gear drives. The proposed design algorithm automates the design process by integrating the dimensional design and the configuration design process. The algorithm consists of four steps. In the first step, the user determines the number of reduction stages. In the second step, gear ratios of every stage are chosen using the random search method. The values of the basic design parameters of a gear are chose in the third step by using the generate and test method. Then the values of the dimensions, such as pitch diameter, outer diameter and face width, are calculated for the configuration design in the next step. The strength and durability of each gear is guaranteed by the bending strength and the pitting resistance rating practices by using AGMA rating formulas. In the final step, the configuration design is carried out using simulated annealing algorithm. The positions of gears and shafts are determined to minimize the geometrical volume (size) of a gearbox while avoiding interferences between them. These steps are carried out iteratively until a desirable solution is acquired. The proposed design algorithm is applied to the preliminary design of four-stage gear drives in order to validate the availability. The design solution has considerably good results in both aspects of the dimensional and the configuration design.

  • PDF

Detection of Cymbidium Mosaic Virus and Odontoglossum Ringspot Virus in Seed-Derived Plantlets of Phalaenopsis Imported by One-Step RT-PCR (One-Step RT-PCR 방법에 의한 수입 호접란묘의 심비디움 모자이크 바이러스와 오돈토글로섬 윤문 바이러스의 검정)

  • Yun, Jong Sun;Hong, Eui Yon;Kim, Ik Hwan;Yun, Tae;Kim, Tae Su;Paek, Kee Yoeup
    • Horticultural Science & Technology
    • /
    • v.18 no.4
    • /
    • pp.513-517
    • /
    • 2000
  • This experiment was carried out to detect the cymbidium mosaic virus (CymMV) and the odontoglossum ringspot virus (ORSV) in the seed-derived plantlets of Phalaenopsis imported from Taiwan by one-step reverse transcription-polymerase chain reaction (RT-PCR). Simple and rapid crude plant extracts for RT-PCR were prepared. The reverse transcription step was performed at $42^{\circ}C$ for 45 min and the following thermal cycling scheme was used for 36 reaction cycles: template predenaturation at $96^{\circ}C$ for 2 min, template denaturation at $96^{\circ}C$ for 30 s, primer annealing at $60^{\circ}C$ for 30 s, and DNA synthesis at $72^{\circ}C$ for 1 min. Of the 40 seed-derived plantlets of Phalaenopsis imported from Taiwan, all of them were infected with CymMV, but ORSV was not detected.

  • PDF

A Study on the Precipitation Behavior of Disordered ${\gamma}$ Phase in an $L1_2$ Ordered ${\gamma}^{\prime}-Ni_3(Al,Ti)$ Phase ($L1_2$${\gamma}^{\prime}-Ni_3(Al,Ti)$ 규칙상 중에 불규칙 ${\gamma}$상의 석출거동에 관한 연구)

  • Han, Chang-Suk
    • Journal of the Korean Society for Heat Treatment
    • /
    • v.19 no.5
    • /
    • pp.249-256
    • /
    • 2006
  • Structural studies have been performed on precipitation hardening found in $L1_2$ ordered ${\gamma}^{\prime}-Ni_3(Al,Ti)$ alloys using transmission electron microscopy. A uniform solid solution of ${\gamma}^{\prime}-L1_2$ ordered phase supersaturated with Ni can be obtained by solution annealing in a suitable temperature range. The ${\gamma}^{\prime}$ phase hardens appreciably by the fine precipitation of disordered ${\gamma}$. The shape of ${\gamma}$ precipitates formed during aging is initially spherical or round-cubic and grow into platelets as aging proceeds. High resolution electron microscopy revealed that the ${\gamma}$ precipitates are perfectly coherent with the matrix ${\gamma}^{\prime}$ as long as the ${\gamma}$-precipitates are plates. The loss of coherency initiates by the introduction of dislocations at the ${\gamma}/{\gamma}^{\prime}$ interface followed by the step formation at the dislocations. The ${\gamma}$ precipitates become globular after the loss of coherency. The strength of ${\gamma}^{\prime}-Ni_3(Al,Ti)$ increases over the temperature range of experiment by the precipitation of fine ${\gamma}$ particles. The peak temperature where a maximum strength was obtained shifted to higher temperature.

Synthesis of Li2MnSiO4 by Solid-state Reaction (고상반응법을 이용한 Li2MnSiO4 합성)

  • Kim, Ji-Su;Shim, Joong-Pyo;Park, Gyung-Se;Sun, Ho-Jung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.25 no.5
    • /
    • pp.398-402
    • /
    • 2012
  • Synthesis of $Li_2MnSiO_4$ was attempted by the conventional solid-state reaction method, and the phase formation behavior according to the change of the calcination condition was investigated. When the mixture of the three source materials, $Li_2O$, MnO and $SiO_2$ powders, were used for calcination in air, it was difficult to develop the $Li_2MnSiO_4$ phase because the oxidation number of $Mn^{2+}$ could not be maintained. Therefore, two-step calcination was applied: $Li_2SiO_3$ was made from $Li_2O$ and $SiO_2$ at the first step, and $Li_2MnSiO_4$ was synthesized from $Li_2SiO_3$ and MnO at the second step. It was easy to make $Li_2MnSiO_3$ from $Li_2O$ and $SiO_2$. $Li_2MnSiO_4$ single phase was developed by the calcination at $900^{\circ}C$ for 24 hr in Ar atmosphere as the oxidation of $Mn^{2+}$ was prevented. However, the $Li_2MnSiO_4$ was ${\gamma}-Li_2MnSiO_4$, one of the polymorph of $Li_2MnSiO_4$, which could not be used as the cathode materials in Li-ion batteries. By applying the additional low temperature annealing at $400^{\circ}C$, the single phase ${\beta}-Li_2MnSiO_4$ powder was synthesized successfully through the phase transition from ${\gamma}$ to ${\beta}$ phase.

Optimization of Bismuth-Based Inorganic Thin Films for Eco-Friend, Pb-Free Perovskite Solar Cells (친환경 Pb-Free 페로브스카이트 태양전지를 위한 비스무스 기반의 무기 박막 최적화 연구)

  • Seo, Ye Jin;Kang, Dong-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.31 no.2
    • /
    • pp.117-121
    • /
    • 2018
  • Perovskite solar cells have received increasing attention in recent years because of their outstanding power conversion efficiency (exceeding 22%). However, they typically contain toxic Pb, which is a limiting factor for industrialization. We focused on preparing Pb-free perovskite films of Ag-Bi-I trivalent compounds. Perovskite thin films with improved optical properties were obtained by applying an anti-solvent (toluene) washing technique during the spin coating of perovskites. In addition, the surface condition of the perovskite film was optimized using a multi-step thermal annealing treatment. Using the optimized process parameters, $AgBi_2I_7$ perovskite films with good absorption and improved planar surface topography (root mean square roughness decreased from 80 to 26 nm) were obtained. This study is expected to open up new possibilities for the development of high performance $AgBi_2I_7$ perovskite solar cells for applications in Pb-free energy conversion devices.

ZnO thin film Gas sensors for detection of TMA gas with Pt/Ti thin film heater (Pt/Ti 발열체가 내장된 TMA 가스 측정용 ZnO 박막 가스 센서)

  • 류지열;박성현;최혁환;권태하
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.33A no.6
    • /
    • pp.127-135
    • /
    • 1996
  • To increase the sensitivity and the selectivity of the sensors to TMA gas, the composition ratio and the growth conditions of the ZnO films are studied. Annealing of the ZnO films in the various time ranges and temperatures in the oxygen is carried out to enhance the stbility of the electrical resistance. Pt/Ti heater deposited on backside of the substrates in used to control the operating temperature of th esensor. The ZnO thin film sensors doped to 4.0 wt% $Al_{2}$O$_{3}$ 1.0wt.% TiO$_{2}$ and 0.2wt.% V$_{2}$O$_{5}$ exhibited a high sensitivity and an excellent selectivity for TMA gas. The sensors made with the thin films annealed at 700$^{\circ}$C for 60 minutes in the oxygen atmosphere had a good stability and linearity. The heater deposited in the ratio of 1 to 1 (Pt:Ti) had a good heating properties. The sensors fabricated using above conditions showed a good response to the actual gases of a mackerel at a step of deterioration after death.

  • PDF

The Present Status of Recycling Technology of Aluminum Can (알루미늄캔의 재활용(再活用) 기술현황(技術現況))

  • Lim, Cha-Yong;Kang, Suk-Bong
    • Resources Recycling
    • /
    • v.9 no.2
    • /
    • pp.3-10
    • /
    • 2000
  • Used aluminum beverage can(UBC) is an important secondary resource. Domestic recycling rate of UBC should be increased from the standpoint of resource savings and environmental protection. Aluminum can to can recycling is divided into two steps. The first step was composed of the processes such as collection of used beverage cans, shredding, magnetic separation, de-lacquring, melting and casting. The second is remelting and casting, heat treatment, hot and cold rolling, annealing, and can making. With brief discussion about this recycling technology, this article covers aluminum can consumption, the present state of aluminum can recycling in Korea, Japan, USA, and Europe.

  • PDF

Electrical Properties of 50% Pb-excess PZT Thin Films Deposited on the Glass Substrates (유리기판위에 증착한 50% Pb-excess PZT박막의 전기적특성)

  • Jeong, Kyu-Won;Park, Young;Ju, Pil-Yeon;Park, Ki-Yup;Song, Joon-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.14 no.5
    • /
    • pp.370-375
    • /
    • 2001
  • PZT thin films (3500${\AA}$) ahve been prepared onto Pt/Ti/corning glass (1737) substrates with a RF magnetron sputtering system using Pb$\sub$1.50/(Zr$\sub$0.52/,Ti$\sub$0.48)O$_3$ ceramic target. We used two-step annealing techniques, PZT thin films were grown at a 300$^{\circ}C$ substrate temperature and then subjected to an RTA treatment. In case of 500$^{\circ}C$ RTA temperature show pyrochlore phase. The formation of Perovskite phase started above 600$^{\circ}C$ and PZT thin films generated (101) preferred orientation. As the RTA time and temperature increased, crystallization of PZT films were enhanced. The PZT capacitors fabricated at 650$^{\circ}C$ for 10 minutes RTA treatment showed remanent polarization 30 ${\mu}$C/$\textrm{cm}^2$, saturation polarization 42${\mu}$C/$\textrm{cm}^2$, coercive field 110kV/cm, leakage current density 2.83x10$\^$-7/A/$\textrm{cm}^2$, remanent polarization were decreased by 30% after 10$\^$9/ cycles.

  • PDF

An Inspection of Stability for Annealing SiOCH Thin Flim (SiOCH 박막의 열처리에 대한 안정성 검토)

  • Park, Yong-Heon;Kim, Min-Seok;Hwang, Chang-Su;Kim, Hong-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.22 no.1
    • /
    • pp.41-46
    • /
    • 2009
  • The low dielectric SiOCH films were deposited on p-type Si(100) substrates through the dissociation of BTMSM $(((CH_3)_3Si)_2CH_2)$ precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 to 60 sccm by 2 sccm step into reaction chamber but with the constant flow rate of 60 sccm $O_2$. SiOCH thin films were annealed at $450^{\circ}C$ for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed large reduction of the maximum capacitance yielding low dielectric constant owing to reductions of surface charge density. After exposure at room temperature and atmospheric pressure, dielectric constant of SiOCH films was totally increased. However, annealed SiOCH thin films were more stable than as-deposited SiOCH thin films for natural oxidation.

Investigation of Ni Silicide formation at Ni/Cu/Ag Contact for Low Cost of High Efficiency Solar Cell (고효율 태양전지의 저가화를 위한 Ni/Cu/Ag 전극의 Ni Silicide 형성에 관한 연구)

  • Kim, Jong-Min;Cho, Kyeong-Yeon;Lee, Ji-Hun;Lee, Soo-Hong
    • 한국태양에너지학회:학술대회논문집
    • /
    • 2009.04a
    • /
    • pp.230-234
    • /
    • 2009
  • It is significant technique to increase competitiveness that solar cells have a high energy conversion efficiency and cost effectiveness. When making high efficiency crystalline Si solar cells, evaporated Ti/Pd/Ag contact system is widely used in order to reduce the electrical resistance of the contact fingers. However, the evaporation process is no applicable to mass production because high vacuum is needed. Furthermore, those metals are too expensive to be applied for terrestrial applications. Ni/Cu/Ag contact system of silicon solar cells offers a relatively inexpensive method of making electrical contact. Ni silicide formation is one of the indispensable techniques for Ni/Cu/Ag contact sytem. Ni was electroless plated on the front grid pattern, After Ni electroless plating, the cells were annealed by RTP(Rapid Thermal Process). Ni silicide(NiSi) has certain advantages over Ti silicide($TiSi_2$), lower temperature anneal, one step anneal, low resistivity, low silicon consumption, low film stress, absence of reaction between the annealing ambient. Ni/Cu/Ag metallization scheme is an important process in the direction of cost reduction for solar cells of high efficiency. In this article we shall report an investigation of rapid thermal silicidation of nickel on silngle crystalline silicon wafers in the annealing range of $350-390^{\circ}C$. The samples annealed at temperatures from 350 to $390^{\circ}C$ have been analyzed by SEM(Scanning Electron Microscopy).

  • PDF