• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.84-91
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• 2002

The stochiometric composition of $AgGaS_2$/GaAs polycrystal source materials for the $AgGaS_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$/GaAs has tetragonal structure of which lattice constant an and Co were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$/GaAs by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by $\alpha=8.695{\times}10^{-4}$ eV/K, and $\beta=332K$. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2$/GaAs epilayer, we have found that crystal field splitting ${\Delta}Cr$ was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.6
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• pp.219-224
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• 2022

CaF₂ single crystal has a large band gap (12 eV), and it is used for optical windows, prisms, and lenses due to its excellent transmittance in a wide wavelength range and low refractive index. Moreover, it is expected to be one of the materials for ultraviolet transmissive laser optical components. CaF₂ belongs to the fluoride compounds and has a face-centered cubic (FCC) structure with three sub-lattices. The representative method for CaF₂ single crystal growth is Czochralski, which method has the advantages of high production efficiency and the ability to make large crystals. In this study, X-ray diffraction (XRD), X-ray rocking curves (XRC) measurement, and chemical etching were performed to analyze the crystallinity and defect density of the CaF₂ single crystals, grown by the Czochralski method. Fourier-transform infrared spectroscopy (FT-IR) and UV-VIS-NIR spectroscopy systems were used to investigate the optical properties of the CaF₂ crystal. The provability of various applications, including UV application, was systematically investigated with various analysis results.

• Bulletin of the Korean Chemical Society
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• v.14 no.4
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• pp.439-444
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• 1993

The aerobic oxidation of the Fe(II) complex of 1,4,8,11-tetraazacyclotetradecane, [Fe(cyclam)$(CH_3CN)_2](ClO_4)_2$, in MeCN in the presence of a few drops of $HClO_4$ leads to low spin Fe(III) species [Fe(cyclam)$(CH_3CN)_2](ClO_4)_3$. The Fe(III) cyclam complex is further oxidized in the air in the presence of a trace of water to produce the deep green binuclear bismacrocyclic Fe(II) complex $[Fe_2(C_{20}H_{36}N_8)(CH_3CN)_4](ClO_4)_4{\cdot}2CH_3CN$. The Fe(II) ions of the complex are six-coordinated and the bismacrocyclic ligand is extensively unsaturated. $[Fe_2(C_{20}H_{36}N_8)(CH_3CN)_4](ClO_4)_4{\cdot}2CH_3CN$ crystallizes in the monoclinic space group $P2_1/n$ with a= 13.099 (1) ${\AA}$, b= 10.930 (1) ${\AA}$, c= 17.859 (1) ${\AA}$, ${\beta}$= 95.315 $(7)^{\circ}$, and Z= 2. The structure was solved by heavy atom methods and refined anisotropically to R values of R= 0.0633 and $R_w$= 0.0702 for 1819 observed reflections with F > $4{\sigma}$ (F) measured with Mo K${\alpha}$ radiation on a CAD-4 diffractometer. The two macrocyclic units are coupled through the bridgehead carbons of ${\beta}$-diimitie moieties by a double bond. The double bonds in each macrocycle unit are localized. The average bond distances of $Fe(II)-N_{imine}$, $Fe(II)-N_{amine}$, and $Fe(II)-N_{MeCN}$ are 1.890 (5), 2.001 (5), and 1.925 (6) ${\AA}$, respectively. The complex is diamagnetic, containing two low spin Fe(II) ions in the molecule. The complex shows extremely intense charge transfer band in the near infrared at 868 nm with ${\varepsilon}$= 25,000 $M^{-1}cm^{-1}$. The complex shows a one-electron oxidation wave at +0.83 volts and two one-electron reduction waves at -0.43 and-0.72 volts vs. Ag/AgCl reference electrode. The complex reacts with carbon monoxide in $MeNO_2$ to form carbonyl adducts, whose $v_{CO}$ value (2010 $cm^{-1}$) indicates the ${\pi}$-accepting property of the present bismacrocyclic ligand.

• Resources Recycling
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• v.18 no.4
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• pp.24-30
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• 2009

Rare earth based calcium aluminate phosphor ($CaAl_2O_4:Eu^{2+}$, $Nd^{3+}$) supported $TiO_2$ nanoparticles are synthesized by using sol-gel method, which are further characterized using powder X-ray diffraction (XRD), fourier transform infrared (FT-IR), diffuse reflectance UV-Visible spectroscopy (DRS UV-Vis) and transmission electron microscopy (TEM). The XRD pattern of as-prepared and sintered phosphor supported $TiO_2$ does not show the tendency to change the crystal structure from anatase to rutile phase up to $600^{\circ}C$. This indicates that the phosphor support might inhibit the densification and crystallite growth by providing dissimilar boundaries. The diffuse reflectance spectral (DRS) measurements showed shift towards longer wavelength indicating reduction in the band-gap energy as compared to free $TiO_2$. The FT-IR spectra of phosphor supported $TiO_2$ nanoparticles show shift in the peak positions to lower wavelengths. This indicates that the $TiO_2$ nanoparticles are not free, but covalently bonded to the phosphor support. TEM micrographs show presence of crystalline and spherical $TiO_2$ nanoparticles (8 - 15 nm diameter) dispersed uniformly on the surface of phosphor.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.265-274
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• 2011

In this paper, it is studied on wide radiating slot antenna's miniaturization for ultra wide-band(UWB) technologies and notch structure to prevent interference between UWB systems and existing wireless systems for using Wi-Fi service of IEEE standards 802.11 a/n. Proposed antenna that wide slot is decreased from $\lambda/2$ to $\lambda/4$ length of resonant frequency has decreased by 72 % compared with conventional antenna. And optimized T-shaped CPW-fed stub has satisfied UWB bandwidth for 3.0~11.8 GHz. Then, creating 2-order Hilbert curve slot line in the stub's patch area, 4.9~5.6 GHz that centered frequency is 5 GHz is eliminated. Finally, the designed antenna constructed on FR4-epoxy has $20{\times}15\;mm^2$ dimension. The measured results that are obtained return loss under -10 dB through 3.2~11.8 GHz without Wi-Fi bandwidth, a linear phase characteristic, a stable group delay, and omnidirectional radiation patterns are presented.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.980-986
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• 2001

Bragg reflector type FBAR was fabricated on the Si(100) substrate. We measured a frequency response of the resonator at 5.2 GHz and analyzed it by numerical calculation considering actual acoustic losses of each layer in the structure. We fabricated nine layer Bragg reflector of W-SiO$_2$pairs using r.f. sputtering method and fabricated AlN piezoelectric and Al electrodes using pulsed dc sputtering. The return loss(S$_{11}$) of the fabricated Bragg reflector type FBAR was 12 dB at 5.38 GHz and the series resonance frequency(f$_{s}$) was 5.376 GHz and the parallel resonance frequency(f$_{p}$) was 5.3865 GHz. Effective electro-mechanical coupling constant (K$_{eff{^2}}$) and Quality factors(Q$_{s}$), the Figures of Merit of the resonator, were about 0.48% and 411, respectively. We extracted acoustic parameters of AlN piezoelectric and reflection coefficient of the Bragg reflector by numerical calculation. We could know that material acoustic impedance and wave velocity of AlN piezoelectric decreased for intrinsic value and the electromechanical coupling constant(K$_2$) value was very low owing to the poor quality of the AlN piezoelectric. Reflection coefficient of Bragg reflector was 0.99966 and reflection band was very wide from 2.5 to 9.5 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.11C
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• pp.1085-1097
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• 2009

We present a structure and design method of the D8PSK modem compatible with the VDL mode-2 standard and performance test results of the developed modem. In VDL mode-2, the raised cosine filter is used only in the transmitter and a general low pass filter is used in the receiver. Consequently, we can not achieve ISI reduction but can have better spectrum characteristics. Although there is 1~2 dB performance degradation with an un-matched filter compared to that with a matched filter, it is more important to minimize adjacent channel interference in narrow band communications. The transmit signal is generated digitally to avoid the problems(I/Q imbalance and DC offset etc.) of analog modulators. In addition the digital down converter using digital IF sampling technique is adopted for the receiver. This paper contains the overall configuration, design method and simulation results based in part on the previously proposed structures and algorithms. It is confirmed that the modem transmits and receives messages successfully at a speed of max. 870 km/h over ranges of up to 310 km through the ground and in-flight communication tests.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.222-222
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• 2012

Metal oxide gas sensors based on semiconductor type have attracted a great deal of attention due to their low cost, flexible production and simple usability. However, most works have been focused on n-type oxides, while the characteristics of p-type oxide gas sensors have been barely studied. An investigation on p-type oxides is very important in that the use of them makes possible the novel sensors such as p-n diode and tandem devices. Monoclinic cupric oxide (CuO) is p-type semiconductor with narrow band gap (~1.2 eV). This is composed of abundant, nontoxic elements on earth, and thus low-cost, environment-friendly devices can be realized. However, gas sensing properties of neat CuO were rarely explored and the mechanism still remains unclear. In this work, the neat CuO layers with highly ordered mesoporous structures were prepared by a template-free, one-pot solution-based method using novel ink solutions, formulated with copper formate tetrahydrate, hexylamine and ethyl cellulose. The shear viscosity of the formulated solutions was 5.79 Pa s at a shear rate of 1 s-1. The solutions were coated on SiO2/Si substrates by spin-coating (ink) and calcined for 1 h at the temperature of $200{\sim}600^{\circ}C$ in air. The surface and cross-sectional morphologies of the formed CuO layers were observed by a focused ion beam scanning electron microscopy (FIB-SEM) and porosity was determined by image analysis using simple computer-programming. XRD analysis showed phase evolutions of the layers, depending on the calcination temperature, and thermal decompositions of the neat precursor and the formulated ink were investigated by TGA and DSC. As a result, the formation of the porous structures was attributed to the vaporization of ethyl cellulose contained in the solutions. Mesoporous CuO, formed with the ink solution, consisted of grains and pores with nano-meter size. All of them were strongly dependent on calcination temperature. Sensing properties toward H2 and C2H5OH gases were examined as a function of operating temperature. High and fast responses toward H2 and C2H5OH gases were discussed in terms of crystallinity, nonstoichiometry and morphological factors such as porosity, grain size and surface-to-volume ratio. To our knowledge, the responses toward H2 and C2H5OH gases of these CuO gas sensors are comparable to previously reported values.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.3
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• pp.107-112
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• 2010

The Cu$(In_{1-x}Ga_x)Se_2$ is the absorber material for thin film solar cell with high absorption coefficient of $1{\times}10^5cm^{-1}$. In the case of CIGS, the movable energy band gap from $CuInSe_2$ (1.00 eV) to $CuGaSe_2$ (1.68 eV) can be acquired while controlling Ga contain ratio. Generally, the co-evaporator method have used for development and fabrication of the CIGS absorption layer. However, this method should need many steps and lengthy deposition time with high temperature. For these reasons, in this paper, a new growth method of CIGS layer was attempted to hydride vapor transport (HVT) method. The CIGS mixed-source material reacted for HCl gas in the source zone was deposited on the substrate after transporting to growth zone. c-plane $Al_2O_3$ and undoped GaN were used as substrates for growth. The characteristics of grown samples were measured from SEM and EDS.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.335-340
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• 2001

$Ga_2O_3$(1 wt%)-doped ZnO(GZO) thin films were grown on ${\alpha}-Al_2O_3$ (0001) by rf magnetron sputtering at $510^{\circ}C$, whose crystal structure was polycrystalline. As-grown GZO thin film shows poor electrical properties and photoluminescence (PL) spectra. To improve these properties, GZO thin films were annealed at 800-$900^{\circ}C$ in $N_2$atmosphere for 3 min. After the rapid thermal annealing(RTA), deep defect-level emission disappears and near-band emission is greatly enhanced. Annealed GZO thin films show very low resisitivity of $2.6\times10^{-4}\Omega$/cm with $3.9\times10^{20}/\textrm{cm}^3$ carrier concentration and exceptionally high mobility of 60 $\textrm{cm}^2$/V.s. These improved physical properties are explained in terms of translation of doped-Ga atoms from interstitial to substitutional site.