• ETRI Journal
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• v.28 no.5
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• pp.656-659
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• 2006

This letter presents a new polarizer which has a simple comb structure inside a circular waveguide. The electrical performance of the proposed comb polarizer is optimized by a circular waveguide radius and by the physical parameters of the comb plates. This polarizer is suitable for providing good performance in millimeter-band application because of its simple structure and low fabrication cost. In our experiments the dual-band comb polarizer designed in band 1(K) and band 2(Ka) showed good electrical performance without any tuning elements.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.64-67
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• 2003

This paper presents the design of dual-band VCO using PBG structure for IEEE 802.11A/B. By adding switch circuit to the single-band VCO, we could achieve a dual-band VCO. The center frequencies of dual-band VCO are 5.93GHz(-13dBm) and 2.37GHz (3.50dBm). The phase noise is improved about l0dB by using PBG Structure.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.8
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• pp.718-729
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• 2015

A S / X dual broad band patch antenna with shared aperture structure is fabricated. A $2{\times}2$ perforated patch is used for S-band operation and a $2{\times}2$ patch antenna array is integrated in the $2{\times}2$ perforation for X-band operation. The measurement results of a S / X dual broad band patch antenna with shared aperture structure show the broad band characteristics larger than 20 % in both bands.

• Coupled systems mechanics
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• v.5 no.4
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• pp.305-314
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• 2016

We utilize first-principles calculations within density-functional theory to investigate the possibility of strain engineering in the tuning of the band structure of two-dimensional $MoS_2$. We find that the band structure of $MoS_2$ monolayers transits from direct to indirect when mechanical strain is applied. In addition, we discuss the change in the band gap energy and the critical stains for the direct-to-indirect transition under various strains such as uniaxial, biaxial, and pure shear. Biaxial strain causes a larger change, and the pure shear stain causes a small change in the electronic band structure of the $MoS_2$ monolayer. We observe that the change in the interaction between molecular orbitals due to the mechanical strain alters the band gap type and energy.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.2
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• pp.189-198
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• 2014

In this paper, we propose a SSD(Simultaneous Single band Duplex) system using turbo equalizer with frame structure for simultaneous full-duplex communication in single band. the proposed system uses frame structure for self-interference cancellation effectively. In this paper, performance of the proposed system with frame structure compares to performance of SSD system without frame structure to analysis performance of the proposed system with frame structure. Simulation results show that the performance of proposed system with frame structure is batter than performance of SSD system without frame structure when the number of global iterations of both system is same. Using proposed system with frame structure, we can verify that the performance like SSD system without frame structure by few global iteration of turbo equalizer.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.9
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• pp.60-65
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• 2009

In this paper, we present a compact Ultra-Wideband band-pass later with notched band at fireless-LAN band using a band-pass and band-notch filter. The structure of our proposed band-pass filter is very simple, and the DGS(Defected Ground Structure) structure is used to get the low-pass filter characteristic, and an embedded open-stub structure is used to get the notched filter. Our proposed band-pass filter can be much smaller than a cascaded filter. As a result of measurement, the insertion loss is less than 0.7dB throughout the pass-band of $2.21GHz{\sim}10.92GHz$, the return loss is more than 17dB and the group delay maximum variation is 0.24ns and a notched band is at $5.3GHz{\sim}5.7GHz$.

• Coupled systems mechanics
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• v.2 no.2
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• pp.147-157
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• 2013

We numerically investigate the electronic band structure of carbon nanotubes (CNTs) under radial corrugation. Hydrostatic pressure application to CNTs leads to a circumferential wave-like deformation of their initially circular cross-sections, called radial corrugations. Tight-binding calculation was performed to determine the band gap energy as a function of the amplitude of the radial corrugation. We found that the band gap increased with increasing radial corrugation amplitude; then, the gap started to decline at a critical amplitude and finally vanished. This non-monotonic gap variation indicated the metal-semiconductor-metal transition of CNTs with increasing corrugation amplitude. Our results provide a better insight into the structure-property relation of CNTs, thus advancing the CNT-based device development.

• Journal of the Korean Electrochemical Society
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• v.14 no.3
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• pp.145-151
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• 2011

ZnSe, as a II-VI compound semiconductor which has a wide band gap in the visible region is applicable to the various fields such as laser diode, display and solar cell. By using the electrochemical deposition method, ZnSe thin film was synthesized on the ITO glass substrate. The synthesis of ZnSe grains and their structure having zinc blende shape were verified through the analysis of XRD and SEM. UV spectrophotometric method determined the band gap as the value of 2.76 eV. Applying the DFT (Density Functional Theory) in the molecular dynamics, the band structure of ZnSe grains was analyzed. For ZnSe grains with zinc blende structure, the band structure and its density of state were simulated using LDA (Local Density Approximation), PBE (Perdew Burke Ernzerhof), and B3LYP (Becke, 3-parameter, Lee-Yang-Parr) functionals. Among the calculations of energy band gap upon each functional, the simulated one of 2.65 eV based on the B3LYP functional was mostly near by the experimental measurement.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.372-378
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• 1996

The phtoreflectance(PR) spectra of B ion implanted semi-insulating(SI) GaAs were studied. Ion implantation was performed by 150keV implantation energy and 1*10/aup 12/-10$^{15}$ ions/c $m^{2}$ doses. Electronic band structure was damaged by ion implantation with above 1*10$^{13}$ ions/c $m^{2}$ dose. When samples were annealed, " peak was observed at 30-40meV below band gap( $E_{g}$). It should be noted that this energy is close to the ionization energies of S $i_{As}$ , and GeAs in G $a_{As}$ which are also found as impurities in LEC GaAs, it is therefore possible that this feature is related to S $i_{As}$ , or G $e_{As}$ and B ions by implanted defect associated with them. From PR spectra of etched samples which is as-implanted by 1*10$^{14}$ and 1*10$^{15}$ ions/c $m^{2}$ dose, the depth of destroyed electronic band structure was from surface to 0.2.mu.m below surface.nic band structure was from surface to 0.2.mu.m below surface.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.12
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• pp.1655-1660
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• 2014

In this paper, we propose a design of a triple-band microstrip circular patch antenna. The proposed antenna generates the triple frequency resonance at 1.85GHz(LTE), 2.45GHz(ISM) and 5.5GHz(WLAN). Firstly, we design the dual-band antenna. The dual-band antenna consist of the circular patch, slits, and the slot. The circular patch and slot are designed for dual frequency of 2.45GHz and 5.5GHz, respectively. And then the dual-band antenna is combined with additional arm-shaped structure for the triple-band characteristic. The arm-shaped structure is operated as the dipole. It is designed for lowest frequency of 1.85GHz. Each part of the antenna unites to a new structure. In order to design the proposed antenna automatically and optimally, APSO algorithm is adopted. During APSO, the mismatch of the proposed antenna is resolved. The optimal designed antenna has an acceptable return loss(-10dB) at each bands(i.e, 1.85GHz, 2.45GHz and 5.5GHz).