• Journal of the Korea institute for structural maintenance and inspection
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• v.20 no.2
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• pp.60-66
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• 2016

Polyurethane foam index a of the cell structure and the absorption change by using the foam stabilizer of six to investigate the polyurethane foam index producing the agent to the siloxane analyzed with silicon foam stabilizer with FE-SEM in accordance with the characteristics of the silicon-based foam stabilizer cell structure of the primary DC-193 on the chain ends is PO n dog bond, DC-2585, DC-5125, DC-198 has been confirmed as a close cell, silicone surfactant is combined EO n dog to a siloxane main chain terminus DC-5043 and DC-5598 that appeared to open cell structure. In addition, most absorption of the DC-5043 appeared was the size of the open cell greatest formed by the absorption of the cell structure change this absorption of the size of the close cell most detailed and uniform DC-193 appeared small household water-resistant best many showed. The performance test of the water was found to be excellent.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.4
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• pp.1867-1875
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• 2011

In this paper, a low-area 256-point FFT structure is proposed. For low-area implementation CSD(Canonic Signed Digit) multiplier method is chosen. Because multiplication type should be less for efficient CSD multiplier application to the FFT structure, the Radix-$4^2$ algorithm is chosen for those purposes. After, in the proposed structure, the number of multiplication type is minimized in each multiplication block, the CSD multipliers are applied for implementation of multiplication. Furthermore, in CSD multiplier implementation, cell-area is more reduced through common sub-expression sharing(CSS). The Verilog-HDL coding result shows 29.9% cell area reduction in the complex multiplication part and 12.54% cell area reduction in overall 256-point FFT structure comparison with those of the conventional structure.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.33-42
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• 1997

In this paper, a new structure for a dC plasma display pane(PDP) with a wall-catode and a wall-auxilizry anode has been suggested. The wall-cathode with a sufficient discharge area maximizes the discharge volume. The auxiliary anode surrounding the discharge region makes the effective control of the charged particles possible. We have investigated the cahracteristics of the new cell structure with a 2-dimensional computer simulation and a micro gap discharge system, and compared experimentally with those of previous cell structure. The new cell structure with the wall-cathode and auxiliary wall-anode turned out to have improved luminance, discharge forming time and sustain voltage.

• Biomedical Science Letters
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• v.7 no.3
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• pp.127-131
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• 2001

This study was undertaken to examine the effect of amino acids on anoxia-induced cell injury in rabbit renal cortical slices. In order to induce anoxic cell injury, slices were exposed to a 100% $N_2$ atmosphere and control slices were exposed to 100% $O^2$. Irreversible cell injury was estimated by measuring lactate dehydrogenase (LDH) release and alterations in renal cell function were examined by measuring p-aminohippurate (PAH) uptake. Anoxia caused the increase in LDH release in a time-dependent manner. Glycine and glutathione almost completely prevented anoxia-induced LDH release. Of amino acids tested, glycine and alanine exerted the protective effect against anoxia-induced cell injury. However, asparagine with amide side chain, leucine and valine with hydrocarbon side chain, and basic amino acids (lysine, histidine, and arginine) were not effective. Anoxia-induced inhibition of PAM uptake was prevented by glycine. ATP content was decreased by anoxia, which was not affected by glycine. Anoxia-induced depletion of glutathione was significantly prevented by glycine. These results suggest that neutral amino acids with simple structure exert the Protective effect against anoxia-induced cell injury the involvement of specific interaction of amino acids and cell structure.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.7
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• pp.7-16
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• 2000

This paper reports a methodology and its application for extracting cell capacitances and parasitic capacitances in a stacked DRAM cell structure by a numerical technique. To calculate the cell and parasitic capacitances, we employed finite element method (FEM), The three-dimensional DRAM cell structure is generated by solid modeling based on two-dimensional mask layout and transfer data. To obtain transfer data for generating three-dimensional simulation structure, topography simulation is performed. In this calculation, an exemplary structure comprising 4 cell capacitors with a dimension of $2.25{\times}1.75{\times}3.45{\mu}m^3$, 70,078 nodes with 395,064 tetrahedra were used in ULTRA SPARC 10 workstation. The total CPU time for the simulation was about 25 minutes, while the memory size of 201MB was required. The calculated cell capacitance is 24.34fF per cell, and the influential parasitic capacitances in a stacked DRAM cell are investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.459.1-459.1
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• 2014

Because both $TiO_2$ and ZnO has superior characteristic optically and electrically, there are various of research for these materials. However, they have large band gap energy which correspond with not visible light, but UV light. To make up for this disadvantage, Quantum dots (CdS, CdSe) which can absorb the visible light could be deposited on $ZnO/TiO_2$ nanostructure so that the the photoelectrochecmical cell can absorb the light that has larger region of wavelength. Both $TiO_2$ and ZnO can be grown to one-dimensional nanowire structure at low temperature through solutional method. Three-dimensional hierarcical $ZnO/TiO_2$ nanostructure is fabricated by applying these process. Large surface area of this structure make the light absorbed more efficiently. Through type 2 like-cascade energy band structure of nanostructure, the efficient separation of electron-hole pairs is expected. Photoelectrochemical charateristics are found by using these nanostructure to photoelectrode.

• Design & Manufacturing
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• v.14 no.2
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• pp.1-6
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• 2020

Recently, research and commercialization related to the field of cell-based therapeutic drug development has been actively conducted. In order to maintain cell viability and prevent contamination, refrigeration preservation devices, such as CRF (controlled rate freezer) or vapor type LN2 tanks have been developed. On the other hand, the storage container for liquid nitrogen tanks currently on sale minimizes the flow structure to prevent structural defects when stored in a liquid nitrogen tank having a high thermal conductivity than vapor nitrogen. If the cell-based treatment drug is stored in the gaseous LN2 tank as it is, the cell survival after thawing is greatly reduced. It was estimated that the existing storage container structure was a factor that prevented the rapid entry and circulation of gaseous nitrogen into the container. Therefore, this study intends to propose a new supercellular storage container model that can maintain the mechanical strength while maximizing the fluid flow structure. To this end, we estimated that the structural change of the storage container effects on the equivalent stress formed around the through-holes of them when exposed to a cryogenic environment using thermal-structural coupled field analysis. As a result of storage experiments in the gas phase tank of the cell-based therapeutic agent using the developed storage container, it was confirmed that the cell growth rate was improved from 66% to 77%, which satisfied the transportation standards of the FDA(Food and Drug Administration) cell-based therapeutic agent.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.305-308
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• 2007

The field of dye-sensitized solar cell (DSC) is being researched actively at present. Because DSC has several advantages to pass the limits of Si solar cells such as a low manufacturing expense, a simple manufacturing process and its transparency. A lot of researches are underway about materials and processes in the field of dye-sensitized solar cell but its structure has been fixed up as the sandwich structure that both edges are used as positive and negative terminals. But the structure as of present is a factor of decreasing efficiency because the more electrons are recombined the further distance from terminal, considering about the characteristic of dye-sensitized solar cell that electrons generated inside cell are moved by diffusion. In this study, we made experiment on expanding the terminal to shorten internal moving distance of electron and compared the results according to the variation of active area to find out the effect of this trial. As a result, we achieved about 15.5% improvement of maximum power and 0.5% improvement of efficiency from terminal-expanded dye-sensitized solar cell of $2cm^{2}$ active area and concluded that the increasing rate of efficiency is raised as the active area becomes wider.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.863-866
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• 2003

Recently, there has been growing interests in the magneto-resistive random access memory (MRAM) because of its great potential as a future nonvolatile memory. In this paper, a CMOS macro-model for MRAM cell based on a twin cell structure is proposed. The READ and WRITE operations of the MTJ cell can be emulated by adopting data latch and switch blocks. The behavior of the circuit is confirmed by HSPICE simulations in a 0.35-${\mu}{\textrm}{m}$ CMOS process. We expect the macro model can be utilized to develope the core architecture and the peripheral circuitry. It can also be used for the characterization and the direction of the real MTJ cells.

• Journal of the Semiconductor & Display Technology
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• v.14 no.4
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• pp.45-49
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• 2015

Using a combined CVD and ALD equipment system, multi-layer quantum well structures of $Al_2O_3/a-Si/Al_2O_3$ were fabricated on silicon Schottky junction devices and implemented to quantum well solar cells, in which the 1~1.5 nm thicknesses of the aluminum oxide films and the a-Si thin film layers were deposited at $300^{\circ}C$ and $450^{\circ}C$, respectively. Fabricated solar cell was operated by tunneling phenomena through the inserted quantum well structure being generated electrons on the silicon surface. Efficiency of the fabricated solar cell inserted with multi-quantum well of 41 layers has been increased by about 10 times that of the solar cell of pure Schottky junction solar cell.