• Title/Summary/Keyword: 2,4-D and GA$_3$

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Design and fabrication of GaAs MMIC high power amplfier and microstrip combiner for IMT-2000 handset (IMT-2000 고출력 전력전폭기의 GaAs MMIC화 및 전송결합기 설계 구현에 관한 연구)

  • 정명남;이윤현
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.25 no.11A
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    • pp.1661-1671
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    • 2000
  • 본 고에서는 한국통신(Korea Telecom) IMT-2000 시험시스템(이하: Trial system 라고 함) 단말기용 전력증폭단으로 적용하기 위한 다단구동증폭기 및 전력증폭기를 GaAs MMIC로 설계 구현하는 기술을 제시하였다. 설계된 구동증폭기는 3단으로구성하여 RF(Radia Frequency) 송신신호(1955$\pm$70MHz)대역에서 2단 (중간단)의 이득 조정범위가 40 dB이상이 될 수 있도록 능동부품인 MESFET를 Cascade 형으로 구성하고 MESFET의 게이트(gate)에 조정전압을 인가하는 증폭기를 설계하여 GaAs MMIC화 1 침(크기4$\times$5 mm)으로 제작하였다. 아울러, 본 논문에서는 제시한 구동증폭기는 동작주파수 대역폭 범위기 3.5배이고 출력전력은 15dBmm 이며, 출력전력이득이 25~27dB이고 반사계수는 -15~20dB이며 이득평탄도 3dB(동작주파수 대역폭내)로써 Trial system용 단말기의 최종단인 전력증폭단의 출력단 특성을 효과적으로 나타내었다. 그리고, 전력 증폭기는 2개의 입력단에서 출력되는 신호를 분배하는 전력분배기와 병렬구조인 4개의 증폭단에서 출력되는 출력신호를 외부에서 접속하는 전력결합기를 접소하여 구성하였으며 RF(Radio Frequency) 주파수(1955 $\pm$70NHz)에서 대역폭을 4배로 설계하여 광대역인 대역폭을 구현하였고 출력전력은 570mW이며, 출력부가효율(PAE; Power Added Efficency)가 -15$\pm$20dB이고, 이득 평탄도(Gain flatness)는 동작주파수 대역내에서 0.5dB이며 입출력 전압정재파비(Input & Output VSWR)가 13이하인 고출력 전력증포기를 GaAs MMIC화 1칩 (크기; 3$\times$4mm)으로 제작하였다.의 다양성이나 편리성으로 변화하는 것이 국적을 바꾸는 것보다 어려운 시 대가 멀지 않은 미래에 도래할 것이다. 신세기 통신 과 SK 텔레콤에는 현재 1,300만명이 넘 는 고객이 있으며. 이들 고객은 어 이상 음성통화 중심의 이동전화 고객이 아니라 신세기 통신과 SK텔레콤이 함께 구축해 나갈 거대란 무선 네트워크 사회에서 정보화 시대를 살아 갈 회원들이다. '컨텐츠의 시대'가 개막되는 것이며, 신세기통신과 SK텔레콤은 선의의 경쟁 과 협력을 통해 이동인터넷 서비스의 컨텐츠를 개발해 나가게 될 것이다. 3배가 높았다. 효소 활성에 필수적인 물의 양에 따른 DIAION WA30의 라세미화 효율에 관하여 실험한 결과, 물의 양이 증가할수록 그 효율은 감소하였다. DIAION WA30을 라세미화 촉매로 사용하여 아이소옥탄 내에서 라세믹 나프록센 2,2,2-트리플로로에틸 씨오에스터의 효소적 DKR 반응을 수행해 보았다. 그 결과 DIAION WA30을 사용하지 않은 경우에 비해 반응 전환율과 생성물의 광학 순도는 급격히 향상되었다. 전통적 광학분할 반응의 최대 50%라는 전환율의 제한이 본 연구에서 찾은 DIAION WA30을 첨가함으로써 성공적으로 극복되었다. 또한 고체 염기촉매인 DIAION WA30의 사용은 라세미화 촉매의 회수 및 재사용이 가능하게 해준다.해준다.다. TN5 세포주를 0.2 L 규모 (1 L spinner flask)oJl에서 세포간의 응집현상 없이 부유배양에 적응,배양시킨 후 세포성장 시기에 따른 발현을 조사한 결과 1 MOI의 감염조건 하에서는 $0.6\times10^6$cell/mL의 early exponential시기의 세포밀도에서 72시간 배양하였을 대 최대 발현양을 나타내었다. 나타내었다. $\beta$4 integrin의 표현이 침투 능력을 높이는 역할을 하나 이때에는 laminin과 같은 리간드와의 특이

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Analysis of Infiltration/Inflow at Dry and Rainfall Periods in Separated Sewer System of Nakdong River Basin (건기와 우기시 낙동강 유역 분류식 하수관거의 유입수/침입수의 분석)

  • Gu, Joung-Eun;Lee, Hong-Shin;Son, Gun-Tae;Lee, Sung-Eok;Lee, Seung-Hwan
    • Journal of Korean Society of Water and Wastewater
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    • v.25 no.1
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    • pp.75-84
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    • 2011
  • This study was conducted to provide a basic information for the establishment of operation and treatment processes in sewer system of Nakdong river basin to minimize the overall pollutants loading to water body. Sewage flowrates were regularly measured and monitored at various sampling points of newly-built separated sewer system located in G City GA sites. To assess the inflow sewage flowrate, various calculating methods such as water-use evaluation, average-minimum daily flow quality evaluation, minimum daily flow evaluation, night water-use evaluation were used. Average I/Is were calculated except water-use evaluation. Average I/Is were found to be 6.5 $m^{3}/d$, 3.5 $m^{3}/d$, 7.7 $m^{3}/d$ at GA-1, GA-2, GA-3 points respectively. I/I ratios of three areas were found to be 4.8 %, 2.0 % and 2.7 % respectively and were obviously lower than those of the other separated sewer systems as shown in the previous studies.

Effects of Plant Growth Regulators on In Vitro Germination and Organ Formation of Wild Angelica gigas N. (야생 참당귀(Angelica gigas N.)의 기내발아 및 기관유도에 미치는 PGRs의 영향)

  • Lee, Su-Gwang;Cho, Won-Woo;Lee, Song-Hee;Park, Kwang-Woo;Choi, Kyung;Kang, Ho-Duck
    • Korean Journal of Plant Resources
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    • v.25 no.4
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    • pp.456-464
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    • 2012
  • This study was conducted to establish the in vitro optimal condition for seed germination and organogenesis of wild Angelica gigas. The experiment was evaluated the effects of $GA_3$ for pre-treatment with different periods of time (0h, 24h, 48h, 72h) and followed the treatment of seeds by control, scarification and methanol-heating method. As a result, the highest rates (15%) of seed germination was shown under the treatment without soaking of $GA_3$ and methanol-heating treatment. The seed germination was highly increased 60% under the condition of treatment on ultrasonic waves (frequency 80 KHz) with methanol-heating treatment including 0.1 mg/L $GA_3$. The highest callus induction rate was obtained from in vitro germinated stem, root and hypocotyl on the MS medium with 1.0 mg/L NAA and 0.5 mg/L BA. The highest percentages of shooting (50%) and rooting (85%) induction were observed in hypocotyl and root cultured on PGRs free medium and 0.1 mg/L NAA, respectively. In addition, somatic embryogenesis was observed from stem (1.0 mg/L 2,4-D) and hypocotyl (0.1 mg/L NAA).

Crystal Structure and Piezoelectric Properties of Four Component Langasite A3B Ga3Si2O14 (A = Ca or Sr, B = Ta or Nb)

  • Ohsato, Hitoshi;Iwataki, Tsuyoshi;Morikoshi, Hiroki
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.4
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    • pp.171-176
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    • 2012
  • As langasite $A_3BC_3D_2O_{14}$ compounds with piezoelectric properties exhibit no phase transition up to the melting point of 1,400-$1,500^{\circ}C$, many high temperature applications are expected for the SAW filter, temperature sensor, pressure sensor, and so on, based on the digital transformation of wider bandwidth and higher-bit rates. It has a larger electromechanical coupling factor compared to quartz and also nearly the same temperature stability as quartz. The $La_3Ga_5SiO_{14}$ (LGS) crystal with the $Ca_3Ga_2Ge_4O_{14}$-type crystal structure was synthesized and the crystal structure was analyzed by Mill et al. It is also an important feature that the growth of the single crystal is easy. In the case of three-element compounds such as $[R_3]_A[Ga]_B[Ga_3]_C[GaSi]_DO_{14}$ (R=La, Pr and Nd), the piezoelectric constant increases with the ionic radius of R. In this study, crystal structures of four-element compounds such as $[A_3]_A[B]_B[Ga_3]_C[Si_2]_DO_{14}$ (A = Ca or Sr, B = Ta or Nb) are analyzed by a single crystal X-ray diffraction, and the mechanism and properties of the piezoelectricity depending on the species of cation was clarified based on the crystal structure.

The Design and Fabrication of X-Band MMIC Low Noise Amplifier for Active antennal using P-HEMT (P-HEMT를 이용한 능동 안테나용 X-Band MMIC 저잡음 증폭기 설계 및 제작)

  • 강동민;맹성재;김남영;이진희;박병선;윤형섭;박철순;윤경식
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.9 no.4
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    • pp.506-514
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    • 1998
  • The design and fabrication of X-band(11.7~12 GHz) 2-stage monolithic microwave integrated circuit(MMIC) low noise amplifier (LNA) for active antenna are presented using $0.15{\mu}m\times140{\mu}m$ AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (P-HEMT). In each stage of the LNA, a series feedback by using a source inductor is used for both input matching and good stability. The measurement results are achieved as an input return loss under -17 dB, an output return loss under -15dB, a noise figure of 1.3dB, and a gain of 17 dB at X-band. This results almost concur with a design results except noise figure(NF). The chip size of the MMIC LNA is $1.43\times1.27$.

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The luminescence properties of Eu3+ or Tb 3+ doped Lu2Gd1Ga2Al3O12 phosphors for X-ray imaging

  • M.J. Oh;Sudipta Saha;H.J. Kim
    • Nuclear Engineering and Technology
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    • v.55 no.12
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    • pp.4642-4646
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    • 2023
  • The Tb3+ or Eu3+-doped Lu2Gd1Ga2Al3O12 phosphor were fabricated by funace at 1500 ℃ for 12 h using a solid state reaction. The XRD (X-ray diffraction_Panalytical X'Pert Pro) and FE-SEM (field emission scanning electron microscope) are measured to confirm the crystalline structure and surface morphology of the phosphor. The Tb3+-doped Lu2Gd1Ga2Al3O12 phosphor emits the lights in 470~650 nm wavelength range due to transitions from 5D4 to 7Fj. Therefore, it shows the green region in the CIE chromaticity diagram under both UV and X-rays excitations. The Eu3+-doped Lu2Gd1Ga2Al3O12 phosphor emits the lights in 550~750 nm wavelength range because of 5Di to 7Fj. The emission is confirmed to be in the red region using the CIE chromaticity diagram. The Tb3+ or Eu3+-doped Lu2Gd1Ga2Al3O12 phosphor shows the characteristic f-f transition with a long decay time, which is about several milliseconds. They have the high efficiency of light emission for X-ray because of their high effective Z number (Zeff = 58.5) and density. Therefore, they are very much promising phosphors for X-ray imaging application in medical fields.

High-Efficiency GaN-HEMT Doherty Power Amplifier with Compact Harmonic Control Networks (간단한 구조의 고조파 정합 네트워크를 갖는 GaN-HEMT 고효율 Doherty 전력증폭기)

  • Kim, Yoonjae;Kim, Minseok;Kang, Hyunuk;Cho, Sooho;Bae, Jongseok;Lee, Hwiseob;Yang, Youngoo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.9
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    • pp.783-789
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    • 2015
  • This paper presents a Doherty power amplifier(DPA) operating in the 2.6 GHz band for long term evolution(LTE) systems. In order to achieve high efficiency, second and third harmonic impedances are controlled using a compact output matching network. The DPA was implemented using a gallium nitride high electron mobility transistor(GaN-HEMT) that has many advantages, such as high power density and high efficiency. The implemented DPA was measured using an LTE downlink signal with a 10 MHz bandwidth and 6.5 dB PAPR. The implemented DPA exhibited a gain of 13.1 dB, a power-added efficiency(PAE) of 57.6 %, and an ACLR of -25.7 dBc at an average output power of 33.4 dBm.

Response of Korean Ginseng (Panax ginseng C. A. Meyer) to 2, 4- D II. Effects of 2, 4-D Foliar Application on Photosynthesis, Ethylene Gas Production and Plant Growth (제초제 2, 4-D에 대한 고려인삼의 반응 II. 2, 4-D의 경엽처리가 인삼엽의 광합성, 에칠렌가스 발생 및 지상부 생육에 미치는 영향)

  • 조재성;원준연;신최순
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.36 no.2
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    • pp.107-111
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    • 1991
  • This study was conducted to define the effect of 2, 4-D foliar application on the plant growth. photosynthesis ability and ethylene gas production of the ginseng plant. Neither abnomal foliar changes occured nor any inhibition in the leaf and stem growth was resulted for the plants treated with 2,4-D concentrated three times of the recommended dosage. The angle of petiole to the stem became wider by 2, 4-D foliar application. The higher concentration treatment of 2,4-D made the petiole angle significantly wider. Foliar application of the herbicide 2,4-D inhibited photosynthesis of the ginseng leaf. The inhibition rate of photosynthesis was significantly increased with the application concentration of 2, 4-D. Inhibition in photosyn-thesis ability by 2,4-D application with doubled concentration was recovered in three days after treatment. When 2,4-D was treated with a concentration tripled the recommended dosage, 12 days were needed to recover the photosynthesis ability of the ginseng leaf. Ethylene gas was not detected from the ginseng plants treated with 2 times concentrated 2, 4-D. However, the ginseng plants produced 0.03-0.04 ppm ethylene gas when the application rate was increased 3 times. The amount of ethylene gas produced by ginseng plant treated with 3 times concentrated 2, 4-D was only 1/20 compared with the amount produced by the soybean plant treated with the recommended dosage of 2, 4-D.

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A Study on Optimization of LO Power for Improving Linearity in MMIC Double Balanced Mixer (MMIC 이중평형 주파수 혼합기의 선형성 개선을 위한 LO Power 최적화 연구)

  • Kim, Tae-Young;Lee, Min-Jae;Lee, Jong-Chul
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.15 no.4
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    • pp.143-152
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    • 2016
  • In this paper, a MMIC double balanced mixer that can be applied to the tele-communication band is designed and LO power optimization for the mixer is discussed. The chip of the MMIC double-balanced mixer is fabricated on GaAs substrate with the size of $4{\times}4mm^2$. Optimization study of LO power for the MMIC double-balanced mixer proposed in this paper is conducted for the Input IP3 (IIP3) regarding on the linearity of the input signal. When LO power level of+16 dBm is applied to the mixer, IIP3 is obtained to be approximately 23.2 dBm, which is the most outstanding characteristic.

High Performance Wilkinson Power Divider Using Integrated Passive Technology on SI-GaAs Substrate

  • Wang, Cong;Qian, Cheng;Li, De-Zhong;Huang, Wen-Cheng;Kim, Nam-Young
    • Journal of electromagnetic engineering and science
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    • v.8 no.3
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    • pp.129-133
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    • 2008
  • An integrated passive device(IPD) technology by semi-insulating(SI)-GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction in wireless applications. This technology includes reliable NiCr thin film resistor, thick plated Cu/Au metal process to reduce resistive loss, high breakdown voltage metal-insulator-metal(MIM) capacitor due to a thinner dielectric thickness, lowest parasitic effect by multi air-bridged metal layers, air-bridges for inductor underpass and capacitor pick-up, and low chip cost by only 6 process layers. This paper presents the Wilkinson power divider with excellent performance for digital cellular system(DCS). The insertion loss of this power divider is - 0.43 dB and the port isolation greater than - 22 dB over the entire band. Return loss in input and output ports are - 23.4 dB and - 25.4 dB, respectively. The Wilkinson power divider based on SI-GaAs substrates is designed within die size of $1.42\;mm^2$.