• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.11 no.5
• /
• pp.748-754
• /
• 2000

A novel single feed wide band CP stacked microstrip antenna using crossed slots has been designed, fabricated and measured. For the single rediating element the designed 10dB return loss bandwidth is 34.5%99.45~13.54 GHz), 3dB axial ratio bandwidth is 18.7%(11.17~13.39GHz), and 6 dB gain bandwidth is 29%(10.21~13.64GHz). For the 2$\times$2 array designed using a sequential rotation method, the 10dB return loss bandwidth is 35.9%(9.69~13.94GHz), 3dB axial ratio bandwidth is 34.6GHz (9.93~14.03GHz), and 6dB gain bandwidth is 27.4%(10.35~13.6GHz). For the fabricated 8$\times$8 array antenna, the 10dB return loss bandwidth is 27.3%(10.17~13.41GHz), 3dB axial ratio bandwidth is 27.9GHz(10.1~13.4GHz), and the radiation pattern is good agreement with theory. This antenna can be used for broadband applications for communications or broadcasting in Ku band.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.15 no.6
• /
• pp.1233-1237
• /
• 2011

Insertion loss, ripple, and return loss were -1.7093dB, 0.9162dB, and -24.762dB with Cellular Rx(824~849 MHz), -1.8021dB, 0.9615dB, and -22.258 with Tx(869~894 MHz), repectively. On the other hand, insertion loss, ripple, and return loss were -2.0149dB, 1.5163dB, and -34.046 dB with DCS Rx(1710~1785 MHz), -1.5894dB, 2.3742dB, and -33.058dB with Tx(1805~1880 MHz), respectively. In the particular, the attenuations in 5MHz edge of band width were -9.1399dB and -14.336dB with Cellular Rx, -7.0343dB and -5.2943dB with Cellualr Tx, respectively. The attenuations of DCS Rx from the relative Tx were -58.298dB and -65.644dB, respectively. On the other hand, those of DCS Tx from the relative Rx were -70.659dB and -50.488dB, respectively. From the aboved results, the dielectric filters for Celluar and DCS band with Isolator showed the good skirt and ripple characterics.

• The Journal of the Acoustical Society of Korea
• /
• v.11 no.2
• /
• pp.28-37
• /
• 1992

In the study, the Acoustic transducer of a thin circular disc-type with PZT/Metal was manufactured. The 'tape casting method' was introduced to prepare the thin disc-type of piezoelectric ceramics. The acoustic characteristics of PZT/Metal acoustic transducer for piezoelectric buzzer and piezoelectric speaker etc. have been studied and analyzed. As a result, the sound pressure level (dB), in the range from -6dB to -14dB, increased with increasing the piezoelectric coeffeicient ($d_{31}$) of ceramics. The optimal conditions of the sound pressure characteristics of acoustic transducer were that the radius ratio(${\eta}$) of ceramics and metal plate is 0.7-0.8 and the thickness ratio(${\beta}$) is 1.0, and the value were -15~-165dB.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.6
• /
• pp.72-80
• /
• 1996

This paper presetns the development of a SSPA operating at KU-band(14~14.5 GHz) in order of replace TWTA used in the terrestria transponder of a satellite communication. The driving stage of SSPA uses internally matched 2W, 4W, 8W FET and the power stage is coupled with two internally matched 8W FET by branch-line cominer. The SSPA is fabricated with oth the RF circuit and the bias circuitry operating temperature compensation, regulation and sequence on aluminum housing. The SSPA testing resutls implemented in this way show 24.8$\pm$1dB small-signal gain, 41dBm P1dB power, a typical two tone C/IM3, -33dBc with single carrier backed off 6dB from p1dB, and gain stability over temeprature (-30~50)$\pm$1dB.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.1
• /
• pp.38-46
• /
• 1999

o.25${\mu}m$ T-shaped gate P-HEMT is fabricated and used for design of X0band three stage monolithic microwave integrated circuit(MMIC) low noise amplifier(LNA). The fabricated P-HEMT exhibits an extrinsis transconductance of 400mS/mm and a drain current of 400mA/mm. The RF and noise characteristics show that the current gain cut off frequency is 65GHz and minimum noise figure(NFmin) of 0.7dB with an associated gain of 14.8dB at 9GHz. In the design of the three stage LNA, we have used the inductive series feedback circuit topology with the short stub. The effects of series feedback to the noise figure, the gain, and the stability have been investigated to find the optimal short stub length. The designed three staage LNA showed a gain of above 33dB, a noise figure of under 1.2dB, and ainput/output return loss of under 15dB and 14dB, respectively. The results show that the fabricated P-HEMT is very suitable for a X-band LNA with high gain.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.32 no.5A
• /
• pp.490-496
• /
• 2007

This paper describes the design and implementation of an integrated LTCC front-end module for the IEEE802.11a WLAN applications by performing the behavioral-level simulation using measurement-based behavioral model. To meet the IEEE802.11a WLAN standard, a system transmitting 1024 symbols through 64-QAM process at the rate of 54Mbps should be implemented and nonlinear properties are confirmed by simulations of ACPR and EVM in this circumstance. The right offsets of ACPR which are 30MHz, 20MHz, and 11MHz distant from the center frequency of 5.8GHz are 49.36dBc, 36.90dBc, and 24.58dBc, respectively. The left offsets are 50.14dBc, 30.04dBc, and 28.85dBc, respectively and EVM is 2.94%. The size of the module implemented with LTCC five-layer substrates is $13.4mm{\times}14.2mm$. The measured characteristics of the transmitter show P1dB of 16.2dBm and power gain of 16.73dB. Those of the receiver exhibit the small signal gain of 16.24dB and noise figure of 7.83dB.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2003.05a
• /
• pp.386-389
• /
• 2003

본 논문에서는 Bluetooth applications를 위한 Bipolar Transistor low noise amplifier (LNA)를 설계하였다. 설계된 LNA는 2.4GHz에서 14.31[dB]의 Gain과 1.59[dB]의 NF를 보였다. 또한 S11은 -13.5[dB], S22는 -21.4[dB]의 양호한 값은 보였다.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.54 no.5
• /
• pp.123-127
• /
• 2017

This paper fabricated and analyzed the image rejection mixer that uses FET's channel resistance. It can be applied for capacity 64QAM that has 50MHz~90MHz of IF band, 8.17GHz of LO frequency and 8.08~8.12GHz of RF band. When IF input power is -20dBm and LO input power is 10dBm, RF output power is obtained -33.2dBm. In this case, conversion loss is 12.9dB, the suppression of 14.3dB for LO frequency and 10.4dB for image frequency. The result of two tone test shows great IMD characteristics with 51.7dBc.

• Proceedings of the IEEK Conference
• /
• 2002.07b
• /
• pp.1062-1065
• /
• 2002

We demonstrate the MMIC(monolithic microwave integrated circuit) frequency doublers generating stable and low-cost 29 ㎓ local oscillator signals from 14.5 ㎓ input signals. These devices were designed and fabricated by using the MMIC integration process of 0.1 $\mu\textrm{m}$ gate-length PHEMTs (pseudomorphic high electron mobility transistors). The measurements showed S$\_$11/ of -9.2 dB at 14.5 ㎓, S/sub22/ of -18.6 dB at 29 ㎓ and a minimum conversion loss of 18.2 dB at 14.5 ㎓ with an input power of 6 dBm. The fundamental signal of 14.5㎓ was suppressed below 15.2 dBc compared with the second harmonic signal at the output port, and the isolation characteristics of the fundamental signal between the input and the output port were maintained above 30 dB in the frequency range of 10.5 ㎓ to 18.5 ㎓.

• Journal of the Microelectronics and Packaging Society
• /
• v.7 no.3
• /
• pp.19-25
• /
• 2000

In this paper, we describe RF receiver module for IMT-2000 handset with 5 MHz channel bandwidth. The fabricated RF receiver module consists of Low Noise Amplifier, RF SAW filter, Down-converter, If SAW filter, AGC and PLL Synthesizer. The NF and IIP3 of LNA is 0.8 dB, 3 dBm at 2.14 GHz, conversion gain of down-converter is 10 dB, dynamic range of AGC is 80 dB, and phase noise of PLL is -100 dBc at 100 kHz. The receiver sensitivity is -110 dBm, adjacent channel selectivity is 48 dBm.