• The Korean Journal of Nuclear Medicine
• /
• v.39 no.1
• /
• pp.1-8
• /
• 2005

This paper is described on the development of KOTRON-13 and recent status of PET cyclotron by commercial cyclotron companies. KIRAMS has developed medical cyclotron which is KIRAMS-13. Samyoung Unitech produces KOTRON-13 with transfered technology by KIRAMS. As a part of Regional Cyclotron Installation Protect, KOTRON-13 cyclotrons and $[18F]FDG$ production modules are being installed at regional cyclotron centers in Korea. The medical concern with radiation technology has been growing for the last several years. Early cancer diagnosis through the cyclotron and PET-CT have been brought to public attention by commercial cyclotron models in the world. The new commercial cyclotron models are introduced compact low energy cyclotrons developed by CTI, GE, Sumitomo in recent. It produces different short-lived radioisotopes, such as $[^{18}F],\;[^{11}C],\;[^{13}N]\;and\;[^{15}O]$. For the better reliability acceleration particle is proton only. The characteristics of new model cyclotrons are changed to lower energy corresponding to less 13 MeV. New models have self-shielding and low power consumption. Design criteria for the different types of commercial cyclotrons are described with reference to hospital demands.

• Progress in Medical Physics
• /
• v.13 no.1
• /
• pp.27-31
• /
• 2002

Output factors for 6MeV electron were directly measured under the condition of an individual beam cutout and these factors were compared with the output factors by 1D method which is an easy means to predict the output factors of electron beam. Output factors by 1D method are defined as output factors of rectangular fields where one side is always equal to the side of the square reference field and the output of an arbitrary rectangular field X, Y is given by the product of the 1D output factors. The output of very large square fields is overestimated using 1D method for the 6MeV electron, but it results in agreement with measured data under the condition of an individual cutout within 1% error adopting a correction factor $CF=C\times$[(X-10)(Y-10)/$\mid$(X-10)(Y-10)$\mid^{1/2}]$.

• Journal of IKEEE
• /
• v.2 no.1 s.2
• /
• pp.101-107
• /
• 1998

This paper is studied micro-defect characteristics by phosphorus 1MeV ion implantation and Rs, SRP, SIMS, XTEM for the RTA process was measured and simulated. As the dose is higher, the Rs is lower. When the dose are $1{\times}10^{13}/cm^2,\;5{\times}10^{13}/cm^2,\;1{\times}10^{14}/cm^2$, the Rp are $1.15{\mu}m,\;1.15{\mu},\;1.10{\mu}m$ respectively. As the RTA time is longer, the maximum concentration position is deeper from the surface and the concentration is lower. Before the RTA was done, we didn't observe any defect. But after the RTA process was done, we could observe the RTA process changed the micro-defects into the secondary defects. The simulation using the buried layer and connecting layer structure was performed. As results, the connecting layer had more effect than the buried layer to latch-up immune. Trigger current was more $0.6mA/{\mu}m$ and trigger voltage was 6V at dose $1{\times}10^{14}/cm^2$ and the energy 500KeV of connecting layer Lower connecting layer dose, latch-up immune characteristics was better.

• Nuclear Engineering and Technology
• /
• v.13 no.4
• /
• pp.207-220
• /
• 1981

The Np-237 fission cross-sections up to 20 MeV incident neutron energy are calculated by means of the computer code STAPRE- a statistical model code with consideration of preequilibrium decay. The higher chance fissions up to third compound nucleus are taken into account, and the main input parameters in the treatment of fission under consideration of a double-humped fission barrier are carefully adjusted, so that the current trend of experimental data can be fitted within an apparent deviation of about 10% throughout the entire energy range. Results are presented in the form of point-wise cross-section values, and also in the form of graph to demonstrate the shape agreement.

• Progress in Superconductivity
• /
• v.13 no.3
• /
• pp.146-150
• /
• 2012

We solve the momentum resolved d-wave Eliashberg equation employing the magnetic excitation spectrum from the inelastic neutron scattering on the LSCO superconductors reported by Vignolle et al. The magnetic excitation spectrum exhibits 2 peaks: a sharp incommensurate peak at 18 meV at momentum (${\pi}$, ${\pi}{\pm}{\delta}$) and (${\pi}{\pm}{\delta}$, ${\pi}$) and another broad peak near 40~70 meV at momentum (${\pi}$, ${\pi}$). Above 70 meV, the magnetic excitation spectrum has a long tail that is shaped into a circle centered at (${\pi}$, ${\pi}$) with ${\delta}$. The sign of the real part of the self-energy is determined by the momentum position of the peaks of the magnetic excitation spectrum and bare dispersion. We will discuss the effects of the each component of the magnetic excitation spectrum on the self-energy, the pairing self-energy.

• Proceedings of the IEEK Conference
• /
• 1998.06a
• /
• pp.331-334
• /
• 1998

p형 실리콘 기판위에 100.angs.의 초기 산화막을 성장시킨 후 붕소(B)와 인(P)을 1MeV 이온주입 에너지로 4.dec. tilting하여 붕소의 도즈량은 1*10/녀ㅔ 13/[cm/sup -2/]까지, 인은 1*10/sup 13/[cm/sup -2]로부터 1*10/sup 14/[cm/sup -2/] 까지 변화시키며 이온 주입하였다. 이온주입 후 RTA 로서 열처리 하였으며, 열처리 시간은 10초에서 40초까지,열처리 온도를 1000.deg.C에서 1100.deg.C까지 변화하였다. 이후 기파낸의 불순물의 프로파일 및 미세 결함의 분포를 분석하기 위하여, SIMS, SRP, XTEM 분석을 실시하였고, 이를 monte-carlo 모ㅓ델로서 시뮬레이션하여 비교하였다. SIMS 분석 결과 열처리 온도와 시간이 증가할수록 접합깊이가 증가하였고, 프로파일이 넓어짐을 볼수 있다. SRP 측정에서 붕소는 주해거리 (Rp)값은 1.8.mu.m~1.9.mu.m, 인의 경우는 1.1.mu.m~1.2.mu.m의 주행거리 (Rp) 값이 나타났다. XTEM 분석결과 붕소의 경우 열처리에 전후에도 결함을 볼수 없었고, 인의 경우 열처리 이후에 실리콘 결정내부에 있던 산소(O)와 인(P)우너자의 pinning효과에 의해 전위다이폴을 형성하여 표면근처로 성장함을 볼수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.167-170
• /
• 2001

The stochiometric mix of evaporating materials for the $CdGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_{2}Se_{4}$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},345cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_{2}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high Quality crystal and neutral bound exiciton $(D^{0},X)$ having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.167-170
• /
• 2001

The stochiometric mix of evaporating materials for the CdGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 630$^{\circ}C$ and 420$^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CdGa$_2$Se$_4$ single crystal thin films measured from Hall erect by van der Pauw method are 8.27x10$\^$17/ cm$\^$-3/, 345 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on CdGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$\_$X/) existing only high quality crystal and neutral bound exiciton (D$\^$0/,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excision were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV,

• Progress in Medical Physics
• /
• v.10 no.1
• /
• pp.41-46
• /
• 1999

There is necessity for making a smaller and more sensitive detector in small field sizes. This report assesses the suitability of metal-loaded thermoluminescent dosimeters for this purpose. Measurements were performed in the 6 MV photon and 6 MeV electron beams of a medical linear accelerator with LiF thermoluminescence dosimeters (TLD-100) embedded in solid water phantom. TLD-100 chips(surface area 3.2 $\times$ 3.2 $\textrm{mm}^2$) loaded with a metal plate(Tin or gold respectively) were used to enhance dose readings to TLD-100. Surface dose was measured for field size 10 $\times$ 10 $\textrm{cm}^2$ and 100 em SSD. Measurements have been made of the enhanced signal intensity and good linearity for absorbed dose with each metal. Using a 1 mm each metal on TLD-l00 in the beam increased the surface dose to 14% and 56% respectively for 6MV photon. In the case of 6 MeV electron, gold plate enhanced the TL response to 13%, but there is no difference for tin plate. The specific dose response of TLD-100 with thin metal plate increases with electron concentration of metal film, this is most likely due to increased electron scattered from the additional material with electron density higher than TLD-100. This emphasizes the role of TL dosimeters with metal as amplified dosimeters for therapeutic high energy x-ray beams. Due to the enhanced dose reading of TLD-100 with metal plate, it could be possible to develop smaller TL dosimeter with high sensitivity.

• Journal of Sensor Science and Technology
• /
• v.24 no.3
• /
• pp.181-187
• /
• 2015

The magnetoelectric characteristics on layered $Fe_{78}B_{13}Si_9/PZT$ and $Fe_{78}B_{13}Si_9/PZT/Fe_{78}B_{13}Si_9$($t_m=0.017$, 0.034mm) composites by epoxy bonding for magnetic field sensor were investigated in the low-frequency range and resonance frequency range. The optimal bias magnetic field $H_{dc}$ of these samples was about 23~63 Oe range. The Me coefficient of $Fe_{78}B_{13}Si_9/PZT/Fe_{78}B_{13}Si_9(t_m=0.034mm)$ composites reaches a maximum of $186mV/cm{\cdot}Oe$ at $H_{dc}=63Oe$, f=50 Hz and a maximum of $1280mV/cm{\cdot}Oe$ at $H_{dc}=63Oe$, resonance frequency $f_r=95.5KHz$. The output voltage shows linearity proportional to ac fields $H_{ac}$ and is about U=0~130.6 mV at $H_{ac}=0{\sim}7Oe$, f=50 Hz, U=0~12.4 V at $H_{ac}=0{\sim}10Oe$, $f_r=95.5KHz$(resonance frequency). The optimal frequency(f=50 Hz) of this sample is around the utility ac frequency(f=60 Hz). Therefore, this sample will allow for ac magnetic field sensor at utility frequency and low bias magnetic fields $H_{dc}$.