• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.5
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• pp.123-127
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• 2017

This paper fabricated and analyzed the image rejection mixer that uses FET's channel resistance. It can be applied for capacity 64QAM that has 50MHz~90MHz of IF band, 8.17GHz of LO frequency and 8.08~8.12GHz of RF band. When IF input power is -20dBm and LO input power is 10dBm, RF output power is obtained -33.2dBm. In this case, conversion loss is 12.9dB, the suppression of 14.3dB for LO frequency and 10.4dB for image frequency. The result of two tone test shows great IMD characteristics with 51.7dBc.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.11
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• pp.1245-1250
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• 2015

In this paper, a compact CPW-fed antenna for 2.45 GHz band WLAN applications is presented. The proposed antenna which has a geometry of folded stub and slot is fabricated into an inexpensive FR-4 substrate that has a dielectric constant of 4.2 and a thickness of 1.0 mm with optimized parameters obtained by simulation, and then measured. From measured result, we confirmed available operation as antenna for WLAN applications by obtaining the return loss level of < -10 dB in the frequency band of 2.4-2.484 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.9
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• pp.915-921
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• 2013

This work presents a 77 GHz low noise amplifier(LNA) for automotive radar systems using 65 nm RF CMOS process. The LNA is composed of three stage common source amplifiers and includes transmission line matching networks. To reduce the time for three dimensional EM simulation, we optimize the transmission line impedance matching network using a pre-built EM library. The proposed compact simulation technique is confirmed by measurement results. The peak gain of the LNA is 10 dB at 77 GHz and input/output return losses are below -10 dB around the design frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.3
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• pp.278-285
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• 2013

In this paper, a 100~110 GHz LNA and A coupler using standard 65 n CMOS process is presented. The LNA consists of three common source FET stages. A few layout types are considered to get high gain characteristic of unit common source cell. Also, optimized performance to achieve low noise characteristic and enough gain. Coupler is composed of broadside coupler using multimetal in CMOS fabrication. In the coupler, the metal strip to meet density rule is used, and the coupler is designed with consideration of the metal strip to function properly. Gain of fabricated LNA is 5.64 dB at 100 GHz and 6.39 dB at 110 GHz. Bandwidth is over 10 % and noise figure is 11.66 dB at 100 GHz. Fabricated coupler has shown insertion loss of 2~3 dB at 100~110 GHz band. Magnitude mismatch of coupler is below 1 dB and phase mismatch of coupler is below $5^{\circ}$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.1
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• pp.8-14
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• 2016

In this paper, a compact CPW-fed antenna for 5 GHz (5.15-5.35 GHz, 5.725-5.825 GHz) band WLAN applications is presented. The designed antenna's shape is step structure. The antenna is fabricated and measured into FR-4 substrate of dielectric comstant 4.2 and thickness 1.0 mm with optimized parameters obtained by simulation. We confirm that it is operated as antenna for WLAN applications by obtaining the measured return loss level of < -10 dB in 5.133-5.982 GHz. The dimensions of the antenna ($20.0{\times}16.0{\times}1.0mm^3$) shows an compactness of about 67.17% with respect to a conventional folded slot antenna.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.4
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• pp.811-817
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• 2014

In this paper, a design method for a dual-band monopole antenna operating in the bands of 2.45 GHz WLAN and UWB is studied. A monopole antenna operating in UWB band is first designed, and a slot is inserted on the monopole to operate in 2.45 GHz WLAN band. The optimized dual-band monopole antenna is fabricated on an FR4 substrate, and the experimental results show that the antenna has a dual-band characterisitc in WLAN and UWB bands with the frequency bands of 2.35-2.50 GHz and 2.99-11.82 GHz for a VSWR < 2. Measured gain is 1 dBi at 2.45 GHz, and ranges 1.5-4.6 dBi in the frequency band of 3.1-10.6 GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.7
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• pp.1652-1656
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• 2014

In this work, we demonstrated a 77 GHz waveguide VCO with transition from WR-12 to WR-10 for anti-collision radar applications. The fabricated waveguide VCO consists of a GaAs-based Gunn diode, a varactor diode, a waveguide transition, and two bias posts for operating as a LPF and a resonator. The cavity is designed for fundamental mode at 38.5 GHz and operated at second hormonic of 77 GHz. The waveguide transition has a 1.86 dB of insertion loss and -30.22 dB of S11 at the center frequency of 77 GHz. The fabricated VCO achieves an oscillation bandwidth of 870 MHz. Output power is from 12.0 to 13.75 dBm and phase noise is -100.78 dBc/Hz at 1 MHz offset frequency from the carrier.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.1
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• pp.55-60
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• 2019

Because of an rapid increase of using a wireless Internet, the originally used communication of 2.4 GHz band was saturated and crossed and there were some problems. According to this, the development of a wireless Internet technology of 5 GHz Band proceeded. In the thesis we researched a Square Slot Microstrip Patch Antenna available in 5 GHz band of wireless communication. The research designed and analyzed the Antenna through HFSS. Ultimately, we compared and analyzed made Antenna through a Network Analyzer.

• Journal of Advanced Navigation Technology
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• v.22 no.4
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• pp.336-341
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• 2018

In this paper, we designed and implemented an ultra wideband (UWB) antenna with 5G mobile communication and WLAN bands rejection characteristics. The proposed antenna consists of a planar radiation patch with two slots, parasitic elements on both sides of the strip line and ground plane on back side. The upper n-type slot contributes for 5G mobile communication band (3.42~3.70 GHz) rejection and the lower n-type slot contributes for wireless local area network (WLAN) band (5.15~5.825 GHz) rejection. Parasitic elements were used in order to satisfy the voltage standing wave ratio (VSWR) less than or equal to 2.0 for UWB band (3.10~10.60 GHz) except two rejection bands. The Ansoft's high frequency structure simulator (HFSS) was used for antenna design and simulations. The simulated antenna showed dual rejection bands of 3.36~3.71 GHz and 5.13 ~ 5.92 GHz in UWB band, and measured result for the implemented antenna showed dual rejection bands of 3.40~3.72 GHz and 5.08~5.858 GHz. Simulated and measured VSWRs are less than or equal to 2.0 for all UWB band except dual rejection bands.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.5B
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• pp.985-991
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• 2000

In this paper, the optimum structure of 2GHz magnetic thin film planar inductor were designed and fabricated to reduce the inductor area and to maximize the inductance L and quality factor Q of the inductor. The optimum design was performed utilizing Co90Fe10 layer multilayered with SiO2 layers to avoid the eddy-current skin effect and considering new lumped element model. New magnetic thin film inductors operating at 2GHz were fabricated on a Si substrate utilizing photo-lithography and lift-off techniques. The frequency characteristics of L, Q, and impedance in more than fifty identical inductors were measured using an RF Impedance Analyzer(HP4291B with HP16193A test fixture). The self-resonant frequencies(SRF) of the inductors were measured by a Vector Network Analyzer(HP8510). The developed inductors have SRF of 1.8 to 2.3GHz, L of 47 to 68nH, and Q of 70 to 80 near 1GHz. Finally, high frequency, high performance, planar micro-inductor(area=30.8 x 30.8il$^2$) with maximized L and Q were fabricated succefully.