• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.156-159
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• 2008

The electrical characteristic of SiGe-on-SOI (SGOI) wafer with different Ge concentration were evaluated by pseudo-MOSFET. Epitaxial SiGe layers was grown directly on top of SOI with Ge concentrations of 16.2, 29.7, 34.3 and 56.5 at.%. As Ge concentration increased, leakage current increased and threshold voltage shifted from 3 V to 7 V in nMOSFET, from -7 V to -6 V in pMOSFET. The interface states between buried oxide and top of Si was significantly increased by the rapid thermal annealing (RTA) process, and so the electrical characteristic of SGOI wafer degraded. On the other hand, additional post RTA　annealing (PRA) showed that it was effective in decreasing the interface states generated by RTA processes and the electrical characteristic of SGOI wafer enhanced higher than initial state.

• Bulletin of the Korean Chemical Society
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• v.33 no.1
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• pp.153-158
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• 2012

The hydrogenation of $AlB_2$-type BaGaGe exhibits a metal to insulator (MI) transition, inducing a puckering distortion of the original hexagonal [GaGe] layers. We investigate the electronic structure changes associated with the hydrogen-induced MI transition, using extended H$\ddot{u}$ckel tight-binding band calculations. The results indicate that hydrogen incorporation in the precursor BaGaGe is characterized by an antibonding interaction of $\pi$ on GaGe with hydrogen 1s and the second-order mixing of the singly occupied antibonding $\pi^*$ orbital into it, through Ga-H bond formation. As a result, the fully occupied bonding $\pi$ band in BaGaGe changes to a weakly dispersive band with Ge pz (lone pair) character in the hydride, which becomes located just below the Fermi level. The Ga-Ge bonds within a layered polyanion are slightly weakened by hydrogen incorporation. A rationale for this is given.

• The Korean Journal of Nuclear Medicine Technology
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• v.13 no.3
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• pp.137-142
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• 2009

Purpose: World Health Organization (WHO) have suggested that an individual's 10-year absolute fracture risk is more reliable than Bone Mineral Density (BMD) measurement as the predictor of osteoporotic fracture. In 2008, Fracture Risk Assessment Tool ($FRAX^{TM}$) was developed by WHO to evaluate fracture risk of patients based on individual's clinical risk factors. The purpose of this study is to offer the comparative analysis of the existing GE prodigy and $FRAX^{TM}$ Tool in Absolute Fracture Risk Assessment Tool. Materials and Methods: 201 women ($55{\pm}3.5$ years) underwent femoral neck BMD measurement using GE Prodigy. The 10-year probability (%) of hip fracture (or a major osteoporosis-related fracture) was estimated using T-scores of GE prodigy and $FRAX^{TM}$. We made a comparative analysis of these data using SPSS (Ver.12). Results: There was a significant difference statistically between T-score ($-0.52{\pm}0.97$) of GE prodigy and T-score ($-1.45{\pm}0.81$) of $FRAX^{TM}$ (r=0.977, p=0.000). Also, there was a significant difference statistically between a major osteoporosis- related fracture ($9.15{\pm}3.71$) of GE prodigy and a major osteoporosis-related fracture ($4.87{\pm}1.51$) of $FRAX^{TM}$ (r=0.909, p=0.000). Moreover, a statistically significant difference was found in the 10-year probability of hip fracture of GE prodigy ($1.56{\pm}1.48$) and of hip fracture ($0.53{\pm}0.61$) of $FRAX^{TM}$ (r=0.905, p=0.000). Conclusions: There was a significant difference statistically between GE prodigy and $FRAX^{TM}$ Tool in Absolute Fracture Risk Assessment Tool. Especially, T-score, a major osteoporosis-related fracture and the 10-year probability of hip fracture that were estimated using GE prodigy tended to show the higher results than one evaluated by $FRAX^{TM}$ Tool. In conclusion, $FRAX^{TM}$ Tool may provide a better tool. The application of $FRAX^{TM}$ Tool as a fracture predictor remains to be clarified.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.11
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• pp.106-112
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• 1992

In this paper, we analyze the structure characteristics of $As_{40}Se_{50-x}S_{x}Ge_{10}$ system bulk and thin films. As the results of XRD patterns, it identified amorphous state. In order to find the glass transition temperature($T_g$), crystallization($T_c$) and melting point ($T_m$)of bulk sample, it ascertained that TS1gT is 238$^{\circ}C$ in $As_{40}Se_{15}S_{35}Ge_{10}$, and 231$^{\circ}C$ in $As_{40}Se_{25}S_{25}Ge_{10}$ & $As_{40}Se_{50}Ge_{10}$ following the thernal analysis by DSC, DTA, & TGA method. Also it was confirmed the phase seperation of continuous phase and dispertion phase by the optical texture of polarizing microscope and $T_g$ near 20$0^{\circ}C$ in thin film. Therefore, it was found that it occurs the phase seperation of Ge-rich dontinuous phase and Se-rich dispersion phase following the EDS analysis of thin film and the surface SEM photograph.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1070-1074
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• 2002

We have carried out two-beam interference experiments to form holographic gratings on As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ single layer, Ag/As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm) under different polarization combinations(intensity polarization holography, phase polarization holography). The diffraction efficiency was obtained by the +lst order intensity. The maximum diffraction efficiency of As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ single layer, As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ and MgF$_2$/As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ multi-layer were 0.8%, 1.4% and 3.1% under intensity polarization holography, respectively.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1287-1288
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• 2008

In the past work, we showed that $Ge_1Se_1Te_2$ thin films provide a promising alternative for PRAM applications to overcome the problems of conventional $Ge_2Sb_2Te_5$ PRAM devices. However, $Ge_1Se_1Te_2$ thin films were unstable at SET and RESET process. Because of unstable state and its melting temperature, we alloyed As for 5wt%, 10wt% and 15wt% respectively. The phase transition temperature of $Ge_1Se_1Te_2$-only thin film is found to be 213$^{\circ}C$ while As 10wt% alloyed $Ge_1Se_1Te_2$ showed phase transition at 242$^{\circ}C$ with more stability.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.175.1-175.1
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• 2014

Despite growing interest in Ge as a possible alternative to Si, reliable data on Ge surface has been relatively scarce. Using low temperature scanning tunneling microscopy (STM), we investigate band-bending effects of localized charge traps at Ge(001) surface at 78 K. For this investigation, we prepared nearly defect-free Ge(001) surface by keeping the background pressure to < $1{\times}10^{-10}$ mbar during outgassing. Ge(001) surfaces this obtained exhibit a flat-band condition, and deposition of charge traps induce a distinct, sharp boundary between pinned and depinned surface area in the constant current mode STM images. We will show the tip-surface interaction plays an essential role in producing the boundary, and discuss about the conditions that enable the pinning effect.

• Journal of Korea Foundry Society
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• v.17 no.5
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• pp.458-464
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• 1997

Mg-Cu-Si과 Mg-Cu-Ge계 3원 합금에서 비정질 생성범위와 열적, 기계적 성질을 조사하였다. Mg-Cu-Si계에서는 $15{\sim}45%Cu$, $0{\sim}10%Si$, Mg-Cu-Ge계에서는 $15{\sim}45%Cu$, $0{\sim}5%Ge$의 조성범위에서 각각 비정질 단상이 생성되었고, $15{\sim}22.5%Cu$, 2.5%Si(or Ge)의 조성범위에서 생성되는 비정질상은 180도 밀착굽힘을 하여도 파단되지 않는 양호한 인성을 가지고 있었으며, $Mg_{82.5}Cu_{15}Ge_{2.5}$비정질합금의 최대인장강도는 800 MPa로 결정질 Mg기 합금의 최대치인 300 MPa에 비해 월등히 높은 값을 나타내었다. 그러고 비정질합금의 결정화는 다음과 같은 과정으로 일어났다. 1) Si(or Ge) ${\le}$ 2.5%: 비정질 ${\to}$ 비정질+$Mg_2Cu$+Mg ${\to}$ $Mg_2Cu$+Mg+$Mg_2Si$(or Ge), 2) Si(or Ge)=5%: 비정질 ${\to}$ $Mg_2Cu$+Mg+$Mg_2Si$(or Ge), 3) Si=10%: 비정질 ${\to}$ 비정질+$Mg_2Si$ ${\to}$ $Mg_2Si$+$Mg_2Cu$+Mg.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.573-578
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• 2003

Low temperature selective epitaxial growth of Si and SiGe has been obtained using an industrial single wafer chemical vapor deposition module operating at reduced pressure. Epitaxial Si and heteroepitaxial SiGe deposition with Ge content about 20 % has been studied as extrinsic base for self-aligned heterojunction bipolar transistors(HBTs), which helps to reduce the parasitic resistance to obtain higher maximum oscillation frequencies(f$\_$max/). The dependence of Si and SiGe deposition rates on exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. SiH$_2$Cl$_2$ was used as the source of Si SEG(Selective Epitaxial Growth) and GeH$_4$ was added to grow SiGe SEG. The addition of HCl into the gas mixture allows increasing an incubation time even low growth temperature of 675∼725$^{\circ}C$. In addition, the selectivity is enhanced for the SiGe alloy and it was proposed that the incubation time for the polycrystalline deposit on the oxide is increased probably due to GeO formation. On the other hand, when only SiGe SEG(Selective Epitaxial Growth) layer is used for extrinsic base, it shows a higher sheet resistance with Ti-silicide because of Ge segregation to the interface, but in case of Si or Si/SiGe SEG layer, the sheet resistance is decreased up to 70 %.

• Korean Journal of Food Science and Technology
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• v.48 no.6
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• pp.597-603
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• 2016

This study aimed to explore the protective effect of Gastrodia elata (GE) in an HCl/ethanol induced acute gastritis model by differing the steaming time. The samples GE1 (GE by steaming for 1 time) and GE9 (GE by steaming for 9 times), were selected based on the results of HPLC analysis, free radical scavenging activities, and total phenol and flavonoid contents. To evaluate the anti-inflammatory effect of GE, ICR mice were divided into 5 groups; normal mice (Nor), gastritic mice with distilled water (Con), gastritic mice with 100 mg/kg GE1, gastritic mice with 100 mg/kg GE9 and gastritic mice with 10 mg/kg sucralfate (SC). HCl/ethanol-induced gastric mucosal injury was markedly improved by GE9 treatment as observed during histological evaluation. The increased reactive oxygen species levels in the serum were diminished by GE9 treatment. Furthermore, peroxynitrite levels of the stomach tissue were decreased in the GE9-treated group. The analyses of stomach proteins indicated that GE9 treatment effectively reduced inflammatory cytokine levels as compared to that by GE1 treatment. These results suggest that GE9 improves health during acute gastritis.